Claims
- 1. A semiconductor element comprising:
- a body of semiconductor material having at least two regions of opposite type conductivity and a P-N junction disposed between, and formed by the abutting surfaces of, each pair of regions of opposite type conductivity;
- an end portion of at least one P-N junction exposed at a surface of the body;
- a layer of a protective coating material disposed on the exposed end portion of the at least one P-N junction;
- the protective coating material is a polymer which is, when cured, one selected from the group consisting of the reaction product of a silicon-free organic diamine and an organic tetracarboxylic dianhydride, a silicon-free organic diamine, an organic tetracarboxylic dianhydride and a polysiloxane diamine and a blend of polyimide compound of recurring structural units of the formula: ##STR10## with a polyimide, as required, composed of recurring structural units of the formula: ##STR11## wherein the molar proportion of the latter is from 0 to 50 mol percent wherein
- R is a divalent hydrocarbon radical,
- R' is a monovalent hydrocarbon radical,
- R" is a tetravalent organic radical,
- Q is a divalent silicon-free organic radical
- which is the residue of an organic diamine,
- x is a whole number equal to at least 1 and advantageously from 1 to 8 and as high as 1 to 10,000 or more,
- m is an integer greater than 1
- n is zero or an integer greater than 0, and
- at least one layer of a glass material disposed on the layer of protective coating material.
- 2. The semiconductor element of claim 1 wherein
- m is from 10 to 10,000 and n is from 1 to 10,000.
- 3. The semiconductor element of claim 1 wherein m is 0.
- 4. The semiconductor element of claim 3 wherein
- m is from 10 to 10,000.
- 5. The semiconductor element of claim 1 wherein
- the coefficient of thermal expansion of the glass material approximates the coefficient of thermal expansion of the material of the body.
- 6. The semiconductor element of claim 5 wherein n is 0.
- 7. The semiconductor element of claim 5 and including
- a second layer of glass comprising silicon dioxide disposed on the at least one layer of glass material.
- 8. The semiconductor element of claim 5 wherein
- the glass material is one selected from the group consisting of borosilicate glass and phosphosilicate glass.
- 9. The semiconductor element of claim 8 and including
- a second layer of glass comprising silicon dioxide disposed on the at least one layer of glass material.
- 10. The semiconductor element of claim 8 wherein
- the thickness of the glass material is from 0.1 micrometer to 10 micrometer.
- 11. The semiconductor element of claim 10 wherein
- the thickness of the glass material is 3 micrometers.
- 12. The semiconductor element of claim 11 and including
- a second layer of glass comprising silicon dioxide disposed on the at least one layer of glass material, and
- the thickness of the second layer of glass is 2000A.
- 13. The semiconductor element of claim 12 wherein
- the semiconductor material is silicon.
- 14. The semiconductor element of claim 12 wherein
- the glass material is borosilicate and comprises from 15 to 25 percent mol of B.sub.2 O.sub.3 therein.
- 15. The semiconductor element of claim 14 wherein
- the glass material comprises 19 .+-. 2 mol percent B.sub.2 O.sub.3.
- 16. The semiconductor element of claim 15 wherein
- the semiconductor material is silicon.
- 17. The semiconductor element of claim 10 wherein
- the glass material is borosilicate and comprises from 15 to 25 mol percent of B.sub.2 O.sub.3 therein.
- 18. The semiconductor element of claim 17 wherein
- the semiconductor material is silicon.
- 19. The semiconductor element of claim 17 wherein
- m is from 10 to 10,000 and n is from 1 to 10,000.
- 20. The semiconductor element of claim 17 wherein
- the glass material comprises 19 .+-. 2 mol percent B.sub.2 O.sub.3.
- 21. The semiconductor element of claim 20 wherein
- the semiconductor material is silicon.
- 22. The semiconductor element of claim 10 and including
- a second layer of glass comprising silicon dioxide disposed on the at least one layer of glass material, and
- the thickness of the second layer of glass is from 1000A to 5000A.
- 23. The semiconductor element of claim 22 wherein
- the semiconductor material is silicon.
- 24. The semiconductor element of claim 22 wherein
- the glass material is borosilicate and comprises from 15 to 25 mol percent of B.sub.2 O.sub.3 therein.
- 25. The semiconductor element of claim 24 wherein
- the glass material comprises 19 .+-. 2 mol percent B.sub.2 O.sub.3.
- 26. The semiconductor element of claim 25 wherein
- the semiconductor material is silicon.
CROSS-REFERENCE TO RELATED PATENT APPLICATION
This patent application is a continuation-in-part of my co-pending patent application Ser. No. 601,839, filed on Aug. 4, 1975, now U.S. Pat. No. 4,017,340, and assigned to the same assignee as this application.
US Referenced Citations (9)
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
601839 |
Aug 1975 |
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