Claims
- 1. A semiconductor integrated circuit device comprising:a first area having a memory cell including: a first MISFET having first semiconductor areas of a source and a drain and a first gate electrode; and a capacitive element electrically connected to a particular one of said first semiconductor areas of a source and a drain; a bit line electrically connected to the other one of said first semiconductor areas of a source and a drain, wherein said capacitive element is formed over the bit line; a second area including a logic circuit including: a second MISFET having second semiconductor areas of a source and a drain and a second gate electrode; and a first insulation film created over said first MISFET and said second MISFET over which the following elements are provided: a first contact hole formed on said first insulation film over a particular one of said second semiconductor areas of a source and a drain; a second contact hole formed on said first insulation film over the other one of said second semiconductor areas of a source and a drain; a first conductive film created on the same layer as said bit line and electrically connected to said particular one of said second semiconductor areas of a source and a drain through said first contact hole in order to shunt said particular one of said second semiconductor areas of a source and a drain; and a second conductive film created on the same layer as said bit line and electrically connected to said other one of said second semiconductor areas of a source and a drain through said second contact hole in order to shunt the other one of said second semiconductor areas of a source and a drain.
- 2. A semiconductor integrated circuit device according to claim 1, wherein said bit line and said first and second conductive films are comprised of tungsten film.
- 3. A semiconductor integrated circuit device according to claim 1, wherein said first conductive film is comprised of two portions.
- 4. A semiconductor integrated circuit device according to claim 2, wherein said first conductive film is comprised of two portions.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-001570 |
Jan 1999 |
JP |
|
Parent Case Info
This is a continuation of application Ser. No. 09/479,592, filed Jan. 7, 2000 now U.S. Pat. No. 6,329,680, the entire disclosure of which are hereby incorporated by reference.
US Referenced Citations (8)
Number |
Name |
Date |
Kind |
4937645 |
Ootsuka et al. |
Jun 1990 |
A |
5081515 |
Murata et al. |
Jan 1992 |
A |
5237187 |
Suwanai et al. |
Aug 1993 |
A |
6020643 |
Fukuzumi et al. |
Feb 2000 |
A |
6066881 |
Shimizu et al. |
May 2000 |
A |
6078072 |
Okudaira et al. |
Jun 2000 |
A |
6194757 |
Shinkawata |
Feb 2001 |
B1 |
6329680 |
Yoshida et al. |
Dec 2001 |
B1 |
Foreign Referenced Citations (1)
Number |
Date |
Country |
10-275910 |
Oct 1998 |
JP |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09/479592 |
Jan 2000 |
US |
Child |
09/988586 |
|
US |