Claims
- 1] A lithographic projection system comprising:
a radiation system to supply a projection beam of radiation; a mask stage holding a mask, the mask stage being made of a light-weight material comprising one selected from high purity fused silica and ultra low expansion glass; a substrate stage holding a wafer, the substrate stage being made of the lightweight material; and an optic system for imaging an irradiated portion of the mask onto a target portion of the wafer.
- 2] The lithographic system of claim 1, wherein the light-weight material comprises an included void structure.
- 3] A lithographic projection system comprising:
means for supplying a projection beam of radiation; a mask stage holding a mask, the mask stage being made of a light-weight material comprising one selected from high purity fused silica and ultra low expansion glass; a substrate stage holding a wafer, the substrate stage being made of the lightweight material; and means for imaging an irradiated portion of the mask onto a target portion of the wafer.
- 4] A lithographic stage, comprising:
a platen made of a light-weight material comprising one selected from high purity fused silica and ultra low expansion glass; and means for holding an optical component on the platen.
- 5] The lithographic stage of claim 4, wherein the light-weight material comprises included voids therein to reduce density of the material.
- 6] The lithographic stage of claim 4, wherein the optical component comprises one selected from a mask and a wafer.
- 7] The lithographic stage of claim 4, further comprising an accessory component on a bottom face thereof.
- 8] The lithographic stage of claim 4, further comprising means for connecting the platen to a positioning device.
- 9] A lithographic stage, comprising:
a platen made of a light-weight material comprising one selected from high purity fused silica and ultra low expansion glass; and a holder for holding an optical component on the platen.
- 10] A method for manufacturing an extreme ultraviolet lithography stage, comprising:
extruding a structure having included voids therein from a glass material comprising one selected from high purity fused silica and ultra low expansion glass; and shaping the structure into the extreme ultraviolet lithography stage.
- 11] The method of claim 10, wherein the extreme ultraviolet lithography stage is one selected from a mask stage and a wafer stage.
- 12] The method of claim 10, wherein the glass material comprises fused silica ultra low expansion glass.
- 13] The method of claim 10, wherein the glass material is TiO2 containing silica.
- 14] The method of claim 10, wherein the glass material is silica having a TiO2 content in the range of 5 to 10 wt. % TiO2.
- 15] The method of claim 10, wherein the shaping comprises fusing a piece of glass material onto the extruded structure.
RELATED APPLICATION
[0001] This Application claims priority of provisional U.S. application Ser. No. 60/240,005, filed on Oct. 13, 2000, and entitled “Silica-Based Light-weight EUVL Stages.”
Provisional Applications (1)
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Number |
Date |
Country |
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60240005 |
Oct 2000 |
US |