Claims
- 1. A substrate coated with a plurality of thick films which comprises:
- an insulative substrate;
- a resistor formed on a first portion of said substrate by firing in air;
- an underlying conductive layer of copper base formed on a second portion of said substrate by firing in a range of about 600.degree. to 650.degree. C. under a non-oxidizing atmosphere;
- an insulative layer formed by firing under a non-oxidizing atmosphere a crystalline glass composition in a firing range of about 529.degree. to 650.degree. C., said crystalline glass composition having a softening temperature in said firing range which is less than or equal to the firing temperature in said firing range at which the insulative layer is formed and a crystallization temperature which is greater than the firing temperature in said firing range at which the insulative layer is formed, said insulative layer so formed as to cover said underlying conductive layer; and
- an overlying conductive layer of copper base formed on said insulating layer by firing in a range of about 600.degree. to 650.degree. C. under a non-oxidizing atmosphere.
- 2. The substrate coated with a plurality of thick films according to claim 1, wherein the insulative layers such that conductive layer of copper base are alternately formed on said overlying conductive layer; and three or more conductive layers are formed in total.
- 3. The substrate coated with a plurality of thick films according to claim 1, wherein the overlying conductive layer is connected to said resistor to form an electrode.
- 4. The substrate coated with a plurality of thick films according to claim 2, wherein the uppermost conductive layer is connected to said resistor to form an electrode.
- 5. The substrate coated with a plurality of thick films according to claim 1, wherein said crystalline glass composition contains bismuth oxide and fluorine.
- 6. The substrate coated with a plurality of thick films according to claim 1, wherein said crystalline glass composition comprises:
- about 5-20% by weight of SiO.sub.2 ;
- about 45-60% by weight of ZnO;
- about 15-30% by weight of B.sub.2 O.sub.3 ;
- about 0.1-3% by weight of R.sub.2 O, where R is selected from the group comprising Li, Na and K;
- about 0.5-10% by weight of XO, where X is selected from the group comprising Mg, Ca, Ba and Sr;
- about 0.5-5% by weight of Al.sub.2 O.sub.3 ;
- about 0.5-5% by weight of Bi.sub.2 O.sub.3 ;
- about 0.5-2% by weight of F;
- about 0.5-2% by weight of SnO.sub.2 ; and
- at least one selected from the group comprising about 0.1-2% by weight of CoO, about 0.1-2% by weight of P.sub.2 O.sub.5, about 0.1-5% by weight of ZrO.sub.2, about 0.1-5% by weight of CdO and about 0.1-3% by weight of PbO.
- 7. A substrate coated with a plurality of thick films which comprises:
- an insulative substrate;
- a resistor formed on a first portion of said substrate by firing in air;
- an underlying conductive layer of copper base formed on a second portion of said substrate by firing in a range of about 600.degree. to 650.degree. C. under a non-oxidizing atmosphere;
- an insulative layer formed by firing under a non-oxidizing atmosphere a crystalline glass composition having a softening temperature in a range of about 529.degree. to 650.degree. C. and sinterable in a range of about 529.degree. to 650.degree. C., and insulative layer being formed so as to cover said underlying conductive layer; and
- an overlying conductive layer of copper base formed on said insulative layer by firing in a range of about 600.degree. to 650.degree. C. under a non-oxidizing atmosphere.
- 8. The substrate coated with a plurality of thick films according to claim 7, wherein said crystalline glass composition comprises:
- about 5-60% by weight of SiO.sub.2 ;
- aboout 45-60% by weight of ZnO;
- about 15-30% by weight of B.sub.2 O.sub.3 ;
- about 0.1-3% by weight of R.sub.2 O, where R is selected from the group comprising Li, Na and K;
- about 0.5-10% by weight of XO, where X is selected from the group comprising Mg, Ca, Ba and Sr;
- about 0.5-5% by weight of Al.sub.2 O.sub.3 ;
- about 0.5-5% by weight of Bi.sub.2 O.sub.3 ;
- about 0.5-2% by weight of F;
- about 0.5-2% by weight of SnO.sub.2 ; and
- at least one selected from the group comprising about 0.1-2% by weight of CoO, about 0.1-2% by weight of P.sub.2 O.sub.5, about 0.1-5% by weight of ZrO.sub.2, about 0.1-5% by weight of CdO and about 0.1-3% by weight of PbO.
Priority Claims (2)
Number |
Date |
Country |
Kind |
60-143758 |
Jun 1985 |
JPX |
|
60-167235 |
Jul 1985 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 878,594, filed June 26, 1986, now abandoned.
US Referenced Citations (6)
Non-Patent Literature Citations (1)
Entry |
DuPont's Mydas System, "DuPont Offers a New High-Yield High Performance, Thick Film Materials and Processing System", (7-84). |
Continuations (1)
|
Number |
Date |
Country |
Parent |
878594 |
Jun 1986 |
|