This U.S. nonprovisional application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2024-0008270, filed on Jan. 18, 2024, in the Korean Intellectual Property Office, the disclosure of which is hereby incorporated by reference in its entirety.
The present inventive concepts relate to a substrate lapping apparatus and a substrate lapping method using the same, and more particularly, to a substrate lapping apparatus capable of performing rapid polishing and a substrate lapping method using the same.
A semiconductor device may be fabricated through various processes. For example, the semiconductor device may be manufactured through a photolithography process, a polishing process, an etching process, a deposition process, and a plating process on a substrate. In the polishing process on a substrate, a lapping process may be used to mechanically polish the substrate. In the lapping process, one surface of the substrate may be mechanically polished by a rotating platen. The lapping process may be used in various fabrication processes. For example, the lapping process may be utilized to manufacture a thin wafer after cutting an ingot. The lapping process may be employed in other fabrication processes.
Some embodiments of the present inventive concepts provide a substrate lapping apparatus capable of promptly polishing a substrate and a substrate lapping method using the same.
Some embodiments of the present inventive concepts provide a substrate lapping apparatus capable of controlling a temperature of polishing liquid supplied to a platen and a substrate lapping method using the same.
Some embodiments of the present inventive concepts provide a substrate lapping apparatus capable of controlling a substrate polishing rate and a substrate lapping method using the same.
The object of the present inventive concepts is not limited to the mentioned above, and other objects which have not been mentioned above will be clearly understood to those skilled in the art from the following description.
According to some embodiments of the present inventive concepts, a substrate lapping apparatus may comprise: a disk-shaped platen; and a switch dam associated with the platen. The platen may include: a plurality of grooves downwardly recessed from a top surface of the platen; and a liquid receiving space. Each of the plurality of grooves may extend straight in a horizontal direction. The liquid receiving space may be downwardly recessed from the top surface of the platen and connected to an edge of the platen. The switch dam may vertically move to be associated with the edge of the platen so as to open and close the liquid receiving space.
According to some embodiments of the present inventive concepts, a substrate lapping apparatus may comprise: a disk-shaped platen; and a polishing head on the platen, the polishing head supporting a substrate. The platen may include: a groove downwardly recessed from a top surface of the platen, the groove straightly running across the platen; a liquid receiving space downwardly recessed from the top surface of the platen; and a supply hole that downwardly extends from a bottom surface that defines the liquid receiving space. The liquid receiving space may be connected to an edge of the platen.
According to some embodiments of the present inventive concepts, a substrate lapping method may comprise: coupling a substrate to a lower portion of a polishing head; placing on a platen the polishing head to which the substrate is coupled; supplying a polishing liquid to the platen; and contacting the substrate with the platen that rotates, the substrate being beneath the polishing head. The platen may provide a liquid receiving space downwardly recessed from a top surface of the platen. The step of supplying the polishing liquid to the platen may include: supplying the polishing liquid to the liquid receiving space; and adjusting a height of a switch dam on a side of the liquid receiving space.
Details of other example embodiments are included in the description and drawings.
The following will now describe some embodiments of the present inventive concepts with reference to the accompanying drawings. Like reference numerals may indicate like components throughout the description.
Terms such as “about” or “approximately” may reflect amounts, sizes, orientations, or layouts that vary only in a small relative manner, and/or in a way that does not significantly alter the operation, functionality, or structure of certain elements. Terms such as “same” or “equal,” as used herein when referring to orientation, layout, location, shapes, sizes, amounts, or other measures do not necessarily mean an exactly identical orientation, layout, location, shape, size, amount, or other measure, but are intended to encompass nearly identical orientation, layout, location, shapes, sizes, amounts, or other measures within acceptable variations that may occur, for example, due to manufacturing processes. The term “substantially” may be used herein to emphasize this meaning, unless the context or other statements indicate otherwise. For example, items described as “substantially the same” or “substantially equal” may be exactly the same or equal, or may be the same or equal within acceptable variations that may occur, for example, due to manufacturing processes.
Although the figures described herein may be referred to using language such as “some embodiments,” or “certain embodiments,” these figures, and their corresponding descriptions are not intended to be mutually exclusive from other figures or descriptions, unless the context so indicates. Therefore, certain aspects from certain figures may be the same as certain features in other figures, and/or certain figures may be different representations or different portions of a particular exemplary embodiment.
In this description, symbol D1 may indicate a first direction, symbol D2 may indicate a second direction that intersects the first direction D1, and symbol D3 may indicate a third direction that intersects each of the first direction D1 and the second direction D2. The first direction D1 may be called an upward direction or a vertical direction. Each of the second direction D2 and the third direction D3 may be called a horizontal direction. The first direction D1, the second direction D2, and the third direction D3 may be orthogonal to one another.
Referring to
The platen 3 may have a disk shape. The platen 3 may have a central axis AX1 parallel to the first direction D1. The first direction D1 may be perpendicular to a top surface 3u of the platen 3. The platen 3 may have a diameter the same as or greater than that of a substrate. For example, the diameter of the platen 3 may range from about 300 mm to about 800 mm, but the present inventive concepts are not limited thereto. A top surface 3u of the platen 3 may polish a substrate, while being in contact with the substrate. The platen 3 may include metal. For example, the platen 3 may include cast iron, but the present inventive concepts are not limited thereto. The platen 3 may provide a groove 3g, a liquid receiving space 3h, and a supply hole (see, e.g., supply hole 3s of
The rotating member 1 may rotate the platen 3. The rotating member 1 may be associated with the platen 3. For example, the rotating member 1 may be combined with a bottom surface of the platen 3 to drive the platen 3 to rotate about a central axis AX2 parallel to the first direction D1. For example, the rotating member 1 may be attached or connected to the bottom surface of the platen 3, and the rotating member 1 and the platen 3 may operate together. The rotating member 1 may have a cylindrical shape, but the present inventive concepts are not limited thereto. A rotating mechanism may further be provided to allow the rotating member 1 to rotate the platen 3. The rotating mechanism may include, for example, an electric motor. The platen 3 may rotate about the central axis AX2 of the rotating member 1. The central axis AX1 of the platen 3 may be spaced apart at a distance ds in the horizontal direction from the central axis AX2 of the rotating member 1. Thus, the platen 3 may not rotate about the central axis AX1 thereof.
The switch dam 5 may be associated with the platen 3. For example, the switch dam 5 may be combined with the platen 3 to open and close the liquid receiving space 3h of the platen 3. For example, the switch dam 5 may be attached or connected to the platen 3. The switch dam 5 may move vertically. The movement of the switch dam 5 may cause an opening and closing of an edge of the liquid receiving space 3h. An elevation actuator may further be provided to move the switch dam 5. The elevation actuator may include a motor, but the present inventive concepts are not limited thereto. The switch dam 5 may be combined with an edge 3e of the platen 3. The switch dam 5 may have an arc shape, but the present inventive concepts are not limited thereto. The switch dam 5 will further be discussed in detail below.
The polishing head 7 may be positioned on the platen 3. The polishing head 7 may be disposed upwardly spaced apart from the platen 3. The polishing head 7 may support a substrate. For example, the polishing head 7 may use a vacuum pressure to adsorb and fix a substrate to a bottom surface of the polishing head 7. The polishing head 7 may be rotatable. Thus, a substrate may also rotate which is coupled to the polishing head 7. The polishing head 7 may be movable in the vertical and horizontal directions. As shown in
The slurry nozzle 9 may be positioned above the platen 3. For example, the slurry nozzle 9 may be disposed upwardly spaced apart from the top surface 3u of the platen 3. The slurry nozzle 9 may supply slurry to the top surface 3u of the platen 3. A slurry supply device (not shown) may further be provided. The slurry supply device may be connected to the slurry nozzle 9. The slurry supply device may include one or more of a slurry tank, a pump, and a supply pipe. The slurry supplied from the slurry supply device may be discharged through the slurry nozzle 9 to the top surface 3u of the platen 3.
The liquid supply device CS may supply a polishing liquid to the platen 3. For example, the liquid supply device CS may supply the liquid receiving space 3h with the polishing liquid. The liquid supply device CS may be connected to the platen 3. For example, the liquid supply device CS may be connected to the supply hole (see, e.g., supply hole 3s of
Although not shown, a polishing pad may further be provided on the platen 3. In this case, a substrate supported by the polishing head 7 may be polished not by the platen 3 but by the polishing pad. For example, a substrate may not be in contact with the platen 3. The polishing pad may provide an exposure hole that exposes the liquid receiving space 3h. The exposure hole may vertically penetrate the polishing pad to expose the liquid receiving space 3h. Thus, a substrate may be in contact with a polishing liquid accommodated in the liquid receiving space 3h. A detailed description thereof will be further discussed below.
Referring to
The liquid receiving space 3h may be formed downwardly recessed from the top surface 3u of the platen 3. A polishing liquid may be supplied to the liquid receiving space 3h. For example, a polishing liquid supplied from the liquid supply device CS may be accommodated in the liquid receiving space 3h. A substrate supported by the polishing head (see, e.g., polishing head 7 of
The liquid receiving space 3h may be connected to the edge 3e of the platen 3. For example, the liquid receiving space 3h may be connected to a lateral surface of the platen 3 except the switch dam 5. For example, the edge 3e of the platen 3 may form a side surface of the liquid receiving space 3h, creating an outer boundary of the liquid receiving space 3h. When the switch dam 5 moves downwards, a lateral surface of the liquid receiving space 3h may be partially exposed. A detailed description thereof will be further discussed below. The liquid receiving space 3h may have, for example, a circular sector shape. For example, the liquid receiving space 3h may be shaped like a circular sector when viewed in plan. The present inventive concepts, however, are not limited thereto, and differently from that shown in
The supply hole 3s may downwardly extend from a bottom surface 3b that defines the liquid receiving space 3h. The supply hole 3s may be connected to the liquid supply device CS. A polishing liquid supplied from the liquid supply device CS may move through the supply hole 3s to the liquid receiving space 3h. The supply hole 3s may be provided in plural. The plurality of supply holes 3s may be disposed spaced apart from each other in the horizontal direction. A single supply hole 3s will be described below in the interest of convenience.
Referring to
The polishing liquid supply step S3 may include supplying the polishing liquid to a liquid receiving space (S31) and adjusting a height of a switch dam (S32).
The substrate lapping method SS of
Referring to
The polishing head placement step S2 may include allowing the platen 3 to receive the polishing head 7 to which the substrate WF is coupled. Therefore, the substrate WF may be disposed on the platen 3. The substrate WF disposed on the platen 3 may rotate driven by the polishing head 7. In this stage, the platen 3 may also rotate. For example, the platen 3 may rotate about the central axis AX2 of the rotating member 1.
Referring to
The polishing liquid supply step S31 may further include adjusting a temperature of the polishing liquid PL. For example, the temperature adjustment device may be used to increase or reduce a temperature of the polishing liquid PL supplied to the liquid receiving space 3h. It may thus be possible to control a polishing rate by the polishing liquid PL.
It is illustrated and described that the polishing liquid PL is supplied from the liquid supply device CS through the supply holes 3s below the liquid receiving space 3h, but the present inventive concepts are not limited thereto. For example, the polishing liquid PL supplied from the liquid supply device CS may be supplied to the liquid receiving space 3h through a separate nozzle that is disposed upwardly spaced apart from the top surface 3u of the platen 3.
The slurry supply step S4 may include allowing the slurry nozzle 9 to supply slurry SL to the top surface 3u of the platen 3. The slurry SL may include a material that chemically etches the bottom surface of the substrate WF. Thus, the bottom surface of the substrate WF may be chemically polished. Alternatively, the bottom surface of the substrate WF may become soft to be easily mechanically polished. Dissimilarly, the slurry SL may include a material substantially the same as or similar to the polishing liquid PL.
The substrate contact step S5 may include descending the polishing head 7 to allow the bottom surface of the substrate WF to contact the top surface 3u of the platen 3 that rotates. Thus, the bottom surface of the substrate WF may be polished. For example, the bottom surface of the substrate WF may be polished by the top surface 3u of the platen 3 that rotates. Alternatively, the bottom surface of the substrate WF may be chemically etched with the slurry SL. Dissimilarly, the bottom surface of the substrate WF may be polished with the polishing liquid PL. For example, the liquid receiving space 3h may receive a portion of the bottom surface of the substrate WF, and thus a portion of the substrate WF may be submerged in the polishing liquid PL in the liquid receiving space 3h. Thus, the substrate WF may be effectively polished. It is described that the polishing liquid PL includes a polishing particle which mechanically polishes the substrate WF, but the present inventive concepts are not limited thereto. For example, the polishing liquid PL may include a material capable of chemically etching the bottom surface of the substrate WF.
Referring to
According to a substrate lapping apparatus and a substrate lapping method using the same in accordance with some embodiments of the present inventive concepts, a platen may be provided with a liquid receiving space which is supposed to accommodate a polishing liquid, and an increased contact area may be provided between a substrate and the polishing liquid. In this sense, the substrate may be in contact with a large amount of the polishing liquid. Thus, a bottom surface of the substrate may be polished at a high polishing rate. Accordingly, the substrate may be promptly polished.
According to a substrate lapping apparatus and a substrate lapping method using the same in accordance with some embodiments of the present inventive concepts, it may be possible to adjust a temperature of polishing liquid supplied to a platen. When the temperature of polishing liquid is changed, a substrate in contact with the polishing liquid may have a change in polishing rate. For example, the temperature of polishing liquid supplied to a liquid receiving space may be controlled to adjust the polishing rate of the substrate.
According to a substrate lapping apparatus and a substrate lapping method using the same in accordance with some embodiments of the present inventive concepts, a height of a switch dam may be adjusted to control an amount of polishing liquid in a liquid receiving space. For example, when the height of the switch dam is decreased, the polishing liquid in the liquid receiving space may have a reduced level. Thus, there may be a reduction in contact area between a substrate and the polishing liquid. Accordingly, the substrate may have a reduced polishing rate. In contrast, when the height of the switch dam is increased, the polishing liquid in the liquid receiving space may have an increased level. Thus, there may be an increase in contact area between the substrate and the polishing liquid. Accordingly, the substrate may have an increased polishing rate. The switch dam may be controlled to adjust a polishing rate of the substrate.
The following will omit a description of components substantially the same as or similar to those discussed with reference to
Referring to
According to a substrate lapping apparatus and a substrate lapping method using the same in accordance with some embodiments of the present inventive concepts, a plurality of liquid receiving spaces may be provided. A polishing rate of a substrate may be controlled by using the number of the plurality of liquid receiving spaces. For example, an increase in the number of liquid receiving spaces may cause an increase in polishing rate of the substrate. In contrast, a reduction in the number of liquid receiving spaces may cause a reduction in polishing rate of the substrate.
The following will omit a description substantially the same as or similar to that discussed with reference to
Referring to
According to a substrate lapping apparatus and a substrate lapping method using the same in accordance with some embodiments of the present inventive concepts, areas of liquid receiving spaces may be different from each other to control a polishing rate of a substrate.
According to a substrate lapping apparatus and a substrate lapping method using the same of the present inventive concepts, a substrate may be promptly polished.
According to a substrate lapping apparatus and a substrate lapping method using the same of the present inventive concepts, it may be possible to adjust a temperature of polishing liquid supplied to a platen.
According to a substrate lapping apparatus and a substrate lapping method using the same of the present inventive concepts, it may be possible to control a polishing rate of a substrate.
The above-described lapping apparatus and polishing method may be used to manufacture semiconductor devices including logic devices and memory devices, and further processes may be performed on the semiconductor substrate WF to form the semiconductor devices. For example, additional conductive and insulating layers may be deposited on the semiconductor substrate WF to form a plurality of semiconductor chips, and the semiconductor chips may then be singulated, packaged on a package substrate, and encapsulated by an encapsulant to form a semiconductor package. The semiconductor devices may include finFET, DRAM, VNAND, etc. The semiconductor devices may be applied in various systems, such as a computing systems.
Effects of the present inventive concepts are not limited to the mentioned above, other effects which have not been mentioned above will be clearly understood to those skilled in the art from the following description.
Although the present invention has been described in connection with some embodiments of the present inventive concepts illustrated in the accompanying drawings, it will be understood to those skilled in the art that various changes and modifications may be made without departing from the technical spirit and essential feature of the present inventive concepts. It therefore will be understood that the embodiments described above are just illustrative but not limitative in all aspects.
Number | Date | Country | Kind |
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10-2024-0008270 | Jan 2024 | KR | national |