Patent Application
20230071478
This application claims priority to Japanese Patent Application No. 2021-144494 filed on Sep. 6, 2021, Japanese Patent Application No. 2022-049553 filed on Mar. 25, 2022, and Japanese Patent Application No. 2022-136129 filed on Aug. 29, 2022, respectively, the entire contents of which are incorporated herein by reference and priority is claimed to each.
Embodiments of the present disclosure relate to a substrate processing apparatus and a maintenance method for the substrate processing apparatus.
A substrate processing apparatus is used to process a substrate. A substrate processing apparatus includes a chamber and a substrate support. The substrate support supports a substrate in the chamber. The substrate is processed in the chamber. In a plasma processing apparatus that is an example of the substrate processing apparatus, a substrate is processed using chemical species from plasma produced from a processing gas in the chamber. Japanese Laid-open Patent Publication No. 2019-197849 discloses such a plasma processing apparatus.
The present disclosure provides a technique capable of easily performing maintenance of an inner wall member of a substrate processing apparatus.
In accordance with an aspect of the present disclosure, there is a substrate processing apparatus comprising: a chamber including a sidewall having an opening; a substrate support disposed in the chamber; a support member disposed above the substrate support; an inner wall member having a ceiling portion disposed above the substrate support and below the support member; a contact member attached to one of the support member and the inner wall member and configured to detachably fix the inner wall member to the support member by applying a spring reaction force to the other of the support member and the inner wall member in a horizontal direction; and an actuator configured to move the inner wall member downward to release the fixing of the inner wall member to the support member.
The objects and features of the present disclosure will become apparent from the following description of embodiments, given in conjunction with the accompanying drawings, in which:
Hereinafter, various embodiments will be described in detail below with reference to the accompanying drawings. Further, like reference numerals will be given to like or corresponding parts throughout the drawings.
The substrate processing system PS may further include tables 2a to 2d, containers 4a to 4d, an aligner AN, load-lock modules LL1 and LL2, and a transfer module TM. The number of tables, the number of containers, and the number of load-lock modules in the substrate processing system PS may be one or more. Further, the number of process modules in the substrate processing system PS may be one or more.
The tables 2a to 2d are arranged along one edge of the loader module LM. The containers 4a to 4d are placed on the tables 2a to 2d, respectively. Each of the containers 4a to 4d is referred to as a front opening unified pod (FOUP), for example. Each of the containers 4a to 4d is configured to accommodate substrates W therein.
The loader module LM has a chamber. A pressure in the chamber of the loader module LM is set to an atmospheric pressure. The loader module LM has a transfer device TU1. The transfer device TU1 is a transfer robot, for example, and is controlled by the controller MC. The transfer device TU1 is configured to transfer the substrate W through the chamber of the loader module LM. The transfer device TU1 can transfer the substrate W between each of the containers 4a to 4d and the aligner AN, between the aligner AN and each of the load-lock modules LL1 and LL2, and between each of the load-lock modules LL1 and LL2 and each of the containers 4a to 4d. The aligner AN is connected to the loader module LM. The aligner AN is configured to adjust a position of the substrate W (calibration of the position).
Each of the load-lock modules LL1 and LL2 is disposed between the loader module LM and the transfer module TM. Each of the load-lock modules LL1 and LL2 provides a preliminary decompression chamber. Each of the load-lock modules LL1 and LL2 is connected to the loader module LM through a gate valve. Each of the load-lock modules LL1 and LL2 is connected to the transfer module TM through a gate valve.
The transfer module TM has a transfer chamber TC whose inner pressure can be reduced. The transfer module TM has a transfer device TU2. The transfer device TU2 is a transfer robot, for example, and is controlled by the controller MC. The transfer device TU2 is configured to transfer the substrate W through the transfer chamber TC. The transfer device TU2 can transfer the substrate W between each of the load-lock modules LL1 and LL2 and each of the process modules PM1 to PM6 and between any two process modules among the process modules PM1 to PM6.
Each of the process modules PM1 to PM6 is connected to the transfer module TM through a gate valve. Each of the process modules PM1 to PM6 is configured to perform dedicated substrate processing. At least one of the process modules PM1 to PM6 is a substrate processing apparatus according to one embodiment to be described below.
The transfer module CTM has a chamber and a transfer device. The transfer module CTM is controlled by the controller MC. The transfer module CTM is movable to be connected to the chamber of the substrate processing apparatus. Further, the transfer module CTM is configured to connect an inner space of the chamber of the substrate processing apparatus and an inner space of the chamber of the transfer module CTM in a state where the inner spaces thereof are depressurized. The transfer device of the transfer module CTM has a transfer arm CA (see
The controller MC is configured to control individual components of the substrate processing system PS. The controller MC may be a computer including a processor, a storage device, an input device, a display device, and the like. The controller MC executes a control program stored in the storage device and controls the individual components of the substrate processing system PS based on a recipe data stored in the storage device. A maintenance method according to one embodiment, which will be described later, can be performed in the substrate processing system PS by controlling the individual components of the substrate processing system PS under the control of the controller MC.
Hereinafter, a substrate processing apparatus according to one embodiment will be described with reference to FIGS. 2 to 4.
The substrate processing apparatus 1 is a capacitively coupled plasma processing apparatus. The substrate processing apparatus 1 includes a chamber 10, a substrate support 12, a support member 14, an inner wall member 16, one or more contact members 18, and an actuator 20.
The chamber 10 has an inner space therein. The chamber 10 is made of a metal such as aluminum. The chamber 10 is electrically grounded. A corrosion-resistant film may be formed on the surface of the chamber 10. The corrosion-resistant film is made of aluminum oxide or yttrium oxide, for example.
The chamber 10 has a sidewalls 10s. The sidewall 10s has a substantially cylindrical shape. A central axis of the sidewall 10s extends vertically and is indicated by an axis AX in
The sidewall 10s further has an opening 10o. The opening 10o has a size through which the inner wall member 16 can pass. The inner space of the chamber 10 can be connected to the inner space of the chamber of the transfer module CTM through the opening 10o. The opening 10o can be opened and closed by a gate valve 10v.
The chamber 10 may further has an upper portion 10u. The upper portion 10u extends from an upper end of the sidewall 10s in a direction intersecting the axis AX. The upper portion 10u has an opening in an area intersecting the axis AX.
The substrate processing apparatus 1 further includes an exhaust device 11. The exhaust device 11 includes a pressure controller such as an automatic pressure control valve, and a vacuum pump such as a turbo molecular pump. The exhaust device 11 is connected to the inner space of the chamber 10 through a bottom portion of the chamber 10.
The substrate support 12 is disposed in the chamber 10. The substrate support 12 is configured to support a substrate W placed thereon. The substrate support 12 may include a base 22 and an electrostatic chuck 24. The base 22 has a substantially disc shape. A central axis of the base 22 substantially coincides with the axis AX. The base 22 is made of a conductor such as aluminum. The base 22 has a flow path 22f therein. The flow path 22f extends in a spiral shape, for example. The flow path 22f is connected to a chiller unit 23. The chiller unit 23 is disposed outside the chamber 10. The chiller unit 23 supplies a heat medium (e.g., coolant) to the flow path 22f. The heat medium supplied to the flow path 22f flows through the flow path 22f and is returned to the chiller unit 23.
The electrostatic chuck 24 is disposed on the base 22. The electrostatic chuck 24 includes a main body and a chuck electrode. The main body of the electrostatic chuck 24 has a substantially disc shape. A central axis of the electrostatic chuck 24 substantially coincides with the axis AX. The main body of the electrostatic chuck 24 is made of ceramic. The substrate W is placed on an upper surface of the main body of the electrostatic chuck 24. The chuck electrode is made of a conductor. The chuck electrode is disposed in the main body of the electrostatic chuck 24. The chuck electrode is connected to a DC power supply through a switch. When a voltage from the DC power supply is applied to the chuck electrode, an electrostatic attractive force is generated between the electrostatic chuck 24 and the substrate W. The substrate W is attracted and held by the electrostatic chuck 24 due to the electrostatic attractive force thus generated. The substrate processing apparatus 1 may include a gas line for supplying a transfer gas (e.g., helium gas) to a space between the electrostatic chuck 24 and the backside of the substrate W.
The substrate support 12 may further support an edge ring ER placed thereon. The substrate W is placed on the electrostatic chuck 24 in an area surrounded by the edge ring ER. The edge ring ER is made of silicon, quartz, or silicon carbide, for example.
The substrate processing apparatus 1 may further include an insulating portion 26. The insulating portion 26 is made of an insulator such as quartz. The insulating portion 26 may have a substantially tubular shape. The insulating portion 26 extends along an outer periphery of the base 22 and an outer periphery of the electrostatic chuck 24.
The substrate processing apparatus 1 may further include a conductor portion 28. The conductor portion 28 is made of a conductor such as aluminum. The conductor portion 28 may have a substantially tubular shape. The conductor portion 28 extends along an outer peripheral surface of the insulating portion 26. The conductor portion 28 extends in a circumferential direction at a radially outer side of the insulating portion 26. Each of the radial direction and the circumferential direction is defined with respect to the axis AX. The conductor portion 28 is connected to the ground. In one example, the conductor portion 28 is connected to the ground through the chamber 10. The conductor portion 28 may be a part of the chamber 10.
The substrate processing apparatus 1 may further include a radio frequency (RF) power supply 31 and a bias power supply 32. The RF power supply 31 generates a source RF power. The source RF power has a frequency suitable for plasma generation. The frequency of the source high frequency power is 27 MHz or higher, for example. The RF power supply 31 is electrically connected to an electrode in the substrate support 12 through a matching device 31m. The RF power supply 31 may be electrically connected to the base 22. The matching device 31m has a matching circuit for matching an impedance of a load side of the RF power supply 31 with an output impedance of the RF power supply 31. The RF power supply 31 may be electrically connected to another electrode in the substrate support 12. Alternatively, the RF power supply 31 may be connected to an upper electrode through the matching device 31m.
The bias power supply 32 generates electrical bias energy. The electrical bias energy is supplied to the electrode of the substrate support 12 to attract ions from the plasma to the substrate W. The electrical bias energy may be a bias RF power. A waveform of the bias RF power is a sine wave having a bias frequency. The bias frequency is 13.56 MHz or less, for example. In this case, the bias power supply 32 is electrically connected to the electrode of the substrate support 12 through a matching device 32m. The bias power supply 32 may be electrically connected to the base 22. The matching device 32m has a matching circuit for matching an impedance of a load side of the bias power supply 32 with an output impedance of the bias power supply 32. Alternatively, the bias power supply 32 may be electrically connected to another electrode in the substrate support 12.
Alternatively, the electrical bias energy may be voltage pulses generated periodically at time intervals corresponding to the reciprocal of the above-described bias frequency. The voltage pulse may have a negative polarity. The voltage pulse may be generated by a negative DC voltage.
The support member 14 is disposed above the substrate support 12. The support member 14 is disposed below the upper portion 10u of the chamber 10 and at an inner side of the sidewall 10s. The support member 14 is vertically movable in the chamber 10.
The substrate processing apparatus 1 may further include a lift mechanism 34. The lift mechanism 34 is configured to move the support member 14 upward and downward. The lift mechanism 34 includes a driving device (e.g., a motor) that generates a power for moving the support member 14. The lift mechanism 34 may be disposed outside the chamber 10 and disposed on or above the upper portion 10u.
The substrate processing apparatus 1 may further include a bellows 36. The bellows 36 is disposed between the support member 14 and the upper portion 10u. The bellows 36 separates the inner space of the chamber 10 from the outside of the chamber 10. A lower end of the bellows 36 is fixed to the support member 14. An upper end of the bellows 36 is fixed to the upper portion 10u.
The support member 14 has a substantially disc shape. The central axis of the support member 14 coincides with the axis AX. The support member 14 is made of a conductor such as aluminum. In one embodiment, the support member 14 may constitute the upper electrode in a capacitively coupled plasma processing apparatus. The support member 14 may be grounded when the RF power supply 31 is electrically connected to the electrode in the substrate support 12. In this case, the support member 14 may be in contact with the inner wall surface of the chamber 10 through a connecting member 37.
In one embodiment, the support member 14 may constitute a shower head together with a ceiling portion (to be described later) of the inner wall member 16. The shower head is configured to supply a gas into the chamber 10 (or a processing space S to be described later). In the present embodiment, the support member 14 has a gas diffusion space 14d and a plurality of gas holes 14h.
The gas diffusion space 14d is disposed in the support member 14. A gas supply device 38 is connected to the gas diffusion space 14d. The gas supply device 38 is disposed outside the chamber 10. The gas supply device 38 includes one or more gas sources, one or more flow rate controllers, and one or more valves used in the substrate processing apparatus 1. Each of the one or more sources of gas is connected to gas diffusion space 14d via a corresponding flow rate controller and a corresponding valve. The gas holes 14h extend downward from the gas diffusion space 14d.
In one embodiment, the support member 14 may have a flow path 14f therein. The flow path 14f is connected to a chiller unit 40. The chiller unit 40 is disposed outside the chamber 10. The chiller unit 40 supplies a heat medium (e.g., a coolant) to the flow path 14f. The heat medium supplied to the flow path 14f flows through the flow path 14f and is returned to the chiller unit 40.
The inner wall member 16 can be transferred between the inside of the chamber 10 and the outside of the chamber 10. The inner wall member 16 may be transferred between the inside of the chamber 10 and the outside of the chamber 10 through the opening 10o by the transfer arm CA.
The inner wall member 16 is made of metal such as silicon, silicon carbide, or aluminum. A corrosion-resistant film may be formed on the surface of the inner wall member 16. The corrosion-resistant member is made of aluminum oxide or yttrium oxide, for example.
The inner wall member 16 has a ceiling portion 16c that may be disposed above the substrate support 12 and below the support member 14. The ceiling portion 16c has a plate shape and has a substantially disc shape. The ceiling portion 16c is disposed in the chamber 10 such that the central axis thereof coincides with the axis AX. The ceiling portion 16c may be disposed directly below the support member 14 in the chamber 10. Alternatively, the heat transfer sheet 42 may be embedded between a bottom surface of the support member 14 and the ceiling portion 16c of the inner wall member 16, as shown in
As described above, the ceiling portion 16c may form the shower head together with the support member 14. In this case, the ceiling portion 16c has a plurality of gas holes 16h. The gas holes 16h penetrate through the ceiling portion 16c. The ceiling portion 16c is disposed in the chamber 10 such the gas holes 16h communicate with the gas holes 14h. The gas from the above-described gas supply device 38 is supplied into the chamber 10 (or the processing space S) through the gas diffusion space 14d, the gas holes 14h, and the gas holes 16h.
In one embodiment, the inner wall member 16 may further has a sidewall portion 16s. The sidewall portion 16s has a substantially tubular shape and extends downward from a peripheral edge of the ceiling portion 16c. The sidewall portion 16s is disposed in the chamber 10 such that the central axis thereof coincides with the axis AX. The inner wall member 16 may form, together with the substrate support 12, the processing space S in which the substrate W placed on the substrate support 12 is processed. In this case, a lower end of the sidewall portion 16s may be in contact with the conductor portion 28.
The sidewall portion 16s may have a plurality of through-holes. The through-holes of the sidewall portion 16s allow the processing space S to communicate with the space outside the sidewall portion 16s. The gas in the processing space S is exhausted by the exhaust device 11 through the through-holes of the sidewall portion 16s and the space outside the sidewall portion 16s.
Hereinafter,
The contact members 18 may be made of a conductor such as a metal or the like. The contact members 18 are attached to one of the support member 14 and the inner wall member 16. When one of the support member 14 and the inner wall member 16 is combined with the other member, each of the contact members 18 is horizontally deformed by the other member, thereby applying a spring reaction force to the other member in a horizontal direction. Accordingly, the contact members 18 detachably fix the inner wall member 16 to the support member 14.
In the embodiment shown in
In one embodiment, a bottom surface 14b of the support member 14 may have a plurality of recesses 14r. The recesses 14r are opened downward. Further, an upper surface 16t of the ceiling portion 16c may have a plurality of recesses 16r. The recesses 16r are opened upward. Each of the contact members 18 may have a first portion 181 and a second portion 182. The first portion 181 is fitted into the corresponding recess 14r of the support member 14. The second portion 182 extends downwardly from the first portion 181, and has a spring. The spring of the second portion 182 is fitted into the corresponding recess 16r of the ceiling portion 16c, and applies a spring reaction force.
In one embodiment, the contact members 18 may be configured to be detachable from the support member 14. The first portion 181 has elasticity so that it can be deformed in the horizontal direction and extracted from the corresponding recess 14r when the contact member 18 is separated from the support member 14. In one embodiment, each of the recesses 14r of the support member 14 may be narrowed at the lower opening thereof.
In one embodiment, the first portion 181 may have an arc shape in any cross section including the axis AX, and may have a hollow inner space. Further, the first portion 181 may be opened at the lower end thereof. The first portion 181 has elasticity in the horizontal direction. The first portion 181 that is horizontally contracted passes through the lower end opening of each of the recesses 14r and is extracted from the corresponding recess 14r.
In one embodiment, the second portion 182 extends downward from the lower end of the first portion 181, and may extend obliquely upward from the lower end thereof to provide a flat spring. The second portion 182 may have an opening at the lower end thereof. When the second portion 182 is fitted into the corresponding recess 16r of the ceiling portion 16c, the second portion 182 is horizontally contracted by the wall surface that defines the recess 16r, thereby applying a spring reaction force to the wall surface. Accordingly, the contact member 18 detachably fixes the inner wall member 16 to the support member 14.
In one embodiment, as shown in
In another embodiment, the contact members 18 may be arranged along one circle or multiple concentric circles, as shown in
Referring back to
The driving device 20d is disposed outside the chamber 10. The driving device 20d generates a power for vertically moving a driving shaft 20m. The driving device 20d may include a power cylinder such as an air cylinder, or a motor. The driving device 20d is fixed to the support member 44 outside the chamber 10.
The rods 20r are coupled to the driving shaft 20m. The rods 20r extend downward from the driving shaft 20m. The rods 20r are arranged along the circumferential direction about the axis AX. The rods 20r may be arranged at regular intervals.
The support member 14 has a plurality of through-holes extending in the vertical direction. The through-holes penetrate through the support member 14 from the upper surface to the bottom surface thereof through the gas diffusion space 14d. The rods 20r are inserted into the through-holes of the support member 14. A sealing member 48 such as an O-ring is disposed between the support member 14 and each of the rods 20r. The rods 20r pass through a tubular member 46 in the gas diffusion space 14d.
The rods 20r are moved up and down by the driving device 20d. When the inner wall member 16 is fixed to the support member 14, the rods 20r are arranged such that the lower ends thereof are positioned at the same horizontal level as the upper surface 16t of the ceiling portion 16c of the inner wall member 16 or positioned above the top surface 16t. When the inner wall member 16 is removed from the support member 14, the rods 20r are moved by the driving device 20d such that the inner wall member 16 is moved downward in a state where the lower ends of the rods 20r are in contact with the upper surface 16t of the ceiling portion 16c of the inner wall member 16.
In accordance with the substrate processing apparatus 1, the contact members 18 are deformed by the inner wall member 16, thereby applying a spring reaction force to the inner wall member 16 in the horizontal direction. Accordingly, the inner wall member 16 is fixed to the support member 14. Further, the fixing of the inner wall member 16 to the support member 14 is easily released by moving the inner wall member 16 downward using the actuator 20 against the spring reaction force of the contact members 18. The inner wall member 16 released from the support member 14 can be unloaded from the chamber 10 to the outside through the opening 10o of the sidewall 10s of the chamber 10. Therefore, in accordance with the substrate processing apparatus 1, the maintenance of the inner wall member 16 can be easily performed.
The substrate processing apparatus 1 may include one contact member 18. In this case, the number of the recess 14r and the number of the recess 16 is one.
Hereinafter, a maintenance method for a substrate processing apparatus according to one embodiment will be described with reference to
In the maintenance method, the contact members 18 are attached to one of the support member 14 and the inner wall member 16. In the case of applying the maintenance method to the substrate processing apparatus 1, the contact members 18 are attached to the support member 14. Specifically, as shown in
Next, the transfer arm CA is moved upward, or the support member 14 is moved downward by the lift mechanism 34. Accordingly, as shown in
Next, the inner wall member 16 is loaded into the chamber 10 from the outside of the chamber 10 through the opening 10o by the transfer arm CA. Thereafter, the support member 14 or the inner wall member 16 is moved in the vertical direction. In other words, the support member 14 is moved downward by the lift mechanism 34, or the inner wall member 16 is moved upward by the transfer arm CA. Accordingly, the inner wall member 16 is detachably fixed to the support member 14, as shown in
The contact members 18 are horizontally deformed by the other member between the support member 14 and the inner wall member 16, thereby applying a spring reaction force to the other member. In the substrate processing apparatus 1, the other member is the inner wall member 16. Specifically, the second portions 182 of the contact members 18 are fitted into the corresponding recesses 16r and contracted in the horizontal direction, thereby applying a spring reaction force to the wall surface that defines the corresponding recesses 16r. Accordingly, the inner wall member 16 is fixed to the support member 14. After the inner wall member 16 is fixed to the support member 14, the transfer arm CA retracts from the chamber 10 to the outside.
In the maintenance method, the inner wall member 16 is unloaded from the chamber 10 to the outside of the chamber 10 for its maintenance (e.g., replacement). Therefore, the transfer arm CA enters the chamber 10 from the outside of the chamber 10 through the opening 10o.
Then, the inner wall member 16 is moved downward against the spring reaction force of the contact members 18 by the actuator 20. Accordingly, the fixing of the inner wall member 16 by the contact members 18 is released. The inner wall member 16 that has moved downward is transferred to the transfer arm CA as shown in
In the maintenance method, the contact members 18 may be separated for maintenance (e.g., replacement) thereof. Therefore, as shown in
Next, the transfer arm CA is moved upward, or the support member 14 is moved downward by the lift mechanism 34. Accordingly, the second portions 182 of the contact members 18 are fitted into the corresponding recesses 54r. The second portions 182 of the contact members 18 pass through the upper openings of the corresponding recesses 54r, and then expand to have a width greater than the widths of the upper openings. Next, the transfer arm CA is moved downward, or the support member 14 is moved upward by the lift mechanism 34. As a result, the contact members 18 are separated from the support member 14 and transferred to the base 54, as shown in FIG. 12. Then, the contact members 18 are unloaded from the chamber 10 to the outside of the chamber 10 by the transfer arm CA.
Hereinafter, a support member, an inner wall member, and a contact member according to another embodiment will be described with reference to
In the embodiment shown in
In the embodiment shown in
Each of the contact members 18 has a recess 18r that is opened downward. Each of the contact members 18 includes a spring 183. The spring 183 is disposed in the recess 18r. A lower end of the spring 183 is directly or indirectly fixed to a wall surface that defines the recess 18r so that the spring 183 can be horizontally deformed. When the corresponding protrusion 16p is fitted into the recess 18r, the spring 183 is deformed in the horizontal direction, thereby applying a spring reaction force to the protrusion 16p in the horizontal direction. Accordingly, the inner wall member 16 is fixed to the support member 14. Also in the embodiment shown in
As shown in
Hereinafter, a support member, an inner wall member, and a contact member according to still another embodiment will be described with reference to
In the embodiment shown in
In the embodiment shown in
Each of the contact members 18 further includes a spring 186. The spring 186 is disposed on the side of the cover portion 185. A lower end of the spring 186 is fixed to a lower end of the cover portion 185. The spring 186 extends upward from the lower end of the cover portion 185 to be deformable in the horizontal direction. When the contact members 18 and the corresponding protrusions 16p are fitted into the corresponding recesses 14r, the springs 186 are deformed in the horizontal direction and apply a spring reaction force to the support member 14 in the horizontal direction. Accordingly, the inner wall member 16 is fixed to the support member 14. Also in the embodiment shown in
Hereinafter, a support member, an inner wall member, and a contact member according to further still another embodiment will be described with reference to
In the embodiment shown in
In the embodiment shown in
Hereinafter, a substrate processing apparatus according to another embodiment will be described with reference to
Hereinafter, substrate processing apparatuses according to other embodiments will be described. Each of the embodiments to be described below includes a contact mechanism that electrically connects the inner wall member 16 to the grounded conductor portion 28. The inner wall member 16 is made of a conductive material. The conductor portion 28 has a tubular shape and extends along an outer circumference of the substrate support 12. The contact mechanism electrically connects a lower end 16e of the sidewall portion 16s of the inner wall member 16 to the conductor portion 28.
Hereinafter,
The tubular body 61 is made of a conductive material such as aluminum. The tubular body 61 is electrically connected to the conductor portion 28 and extends along an outer circumference of the conductor portion 28. The pressing bodies 62 are made of a conductive material such as aluminum. The pressing bodies 62 are disposed between the substrate support 12 and the tubular body 61. The driving device 63 is configured to rotate the tubular body 61 along the circumferential direction. The driving device 63 includes a motor, for example. The contact mechanism 60C presses the pressing bodies 62 against an outer peripheral surface of the lower end 16e of the sidewall portion 16s by the rotation of the tubular body 61 in the circumferential direction. Accordingly, the contact mechanism 60C electrically connects the inner wall member 16 to the conductor portion 28 via the pressing bodies 62 and the tubular body 61.
In one example, the conductor portion 28 includes a plurality of radially projecting guides 28p. The guides 28p are arranged along the circumferential direction. The contact mechanism 60C includes the plurality of pressing bodies 62. The pressing bodies 62 are arranged along the circumferential direction. Each of the pressing bodies 62 has a hole 62h into which the corresponding guide among the guides 28p is inserted. Each of the pressing bodies 62 is movable in the radial direction by the corresponding guide inserted into the hole 62h. Each of the pressing bodies 62 further has protrusions 62p projecting radially outward. In the illustrated example, each of the pressing bodies 62 has a pair of rib-shaped protrusions 62p on both sides of the hole 62h. The tubular body 61 has a plurality of protrusions 61p projecting radially inward. The protrusions 61p are arranged along the circumferential direction.
As shown in
Hereinafter,
As shown in
Hereinafter,
As shown in
Hereinafter,
The contact mechanism 60F includes a contact member 65. The contact member 65 is a flexible thin film made of a conductive material. The contact member 65 is disposed in a recess of the conductor portion 28. The contact member 65 is supported by the conductor portion 28 and electrically connected to the conductor portion 28. Further, the contact member 65 is disposed to be in contact with a bottom surface of the lower end 16e of the sidewall portion 16s. In the contact mechanism 60F, the contact member 65 is pressed against the bottom surface of the sidewall portion 16s, thereby electrically connecting the inner wall member 16 to the conductor portion 28 via the contact member 65. The bottom surface of the lower end 16e of the sidewall portion 16s may have a film 16f of the lower end 16e. The film 16f may be a conductive film or a carbon nanotube.
In one example, in the contact mechanism 60F, the contact member 64 may be pressed against the bottom surface of the sidewall portion 16s by a pressure of fluid (e.g., gas). In this example, the contact mechanism 60F may further include a pressing pin 66. The pressing pin 66 is disposed such that the contact member 65 is positioned between a tip end of the pressing pin 66 and the bottom surface of the sidewall portion 16s. The pressing pin 66 presses the contact member 65 against the bottom surface of the sidewall portion 16s by a pressure of a gas supplied from a gas supply device 67. A spring 66s may be connected to the pressing pin 66 to bias the pressing pin 66 in a direction in which the pressing pin 66 is separated from the contact member 65.
Hereinafter,
Hereinafter,
In the substrate processing apparatus 1G, the conductor portion 28 has a substantially cylindrical shape. The conductor portion 28 has a cavity 28h extending along the circumferential direction about the central axis thereof (i.e., the axis AX). Further, the conductor portion 28 has a plurality of openings 28o extending between the cavity 28h and the space outside the conductor portion 28. The openings 28o may be arranged along the circumferential direction. Further, the openings 28o may be arranged at regular intervals.
The contact mechanism 60G includes an expandable seal 71, a plurality of pressing bodies 72, one or more elastic bodies 73, and an air supply device 74. The expandable seal 71 is disposed in the cavity 28h. The expandable seal 71 may have an annular shape, and may extend in the circumferential direction in the cavity 28h. The air supply device 74 is configured to supply air to the expandable seal 71. The expandable seal 71 is configured to radially expand by air from the air supply device 74.
Each of the pressing bodies 72 is made of a conductive material such as a metal (e.g., aluminum). Each of the pressing bodies 72 includes a first portion 721 and a second portion 722. The first portion 721 is disposed between the expandable seal 71 and a wall 28w of the conductor portion 28 that partitions the openings 280. The second portion 722 extends from the first portion 721 into a corresponding opening among the openings 280. In one embodiment, a tip end 723 (radial tip end) of the second portion 722 may be formed as a contact band.
One or more elastic bodies 73 are made of a conductive material. One or more elastic bodies 73 are disposed between the first portion 721 and the wall 28w. One or more elastic bodies 73 may have an annular shape, and may extend in the circumferential direction in the cavity 28h. One or more elastic bodies 73 may be a canted coil spring, for example. In the illustrated example, one of the two elastic bodies 73 is disposed above the second portion 722, and the other one is disposed below the second portion 722.
As shown in
In the contact mechanism 60G, each of the pressing bodies 72 is moved in the radial direction to bring the tip end 723 of the second portion 722 into contact with the inner peripheral surface of the lower end 12e, thereby electrically connecting the inner wall member 16 to the conductor portion 28 via the pressing bodies 72 and one or more elastic bodies 73. Therefore, it is possible to electrically connect the inner wall member 16 to the conductor portion 28 without causing friction between the members of the contact mechanism 60G and the inner wall member 16. Accordingly, in the contact mechanism 60G, the generation of particles due to friction can be suppressed. The substrate processing apparatus 1G may include one pressing body 72 and one opening 280.
Hereinafter,
In the substrate processing apparatus 1H, the conductor portion 28 has a substantially tubular shape. The conductor portion 28 is disposed above the bottom portion of chamber 10 to be slidable in any horizontal direction. In one embodiment, the substrate processing apparatus 1H may further include a thrust bearing 77. The thrust bearing 77 is disposed between the bottom portion of the chamber 10 and a head of a bolt 78 screwed to the bottom portion of the chamber 10. The conductor portion 28 is slidably supported above the bottom portion of the chamber 10 via the thrust bearing 77. In one embodiment, the conductor portion 28 has a reduced diameter portion 28s at a lower end portion thereof. The reduced diameter portion 28s is disposed between the thrust bearing 77 and the head of the bolt 78. Further, in the illustrated example, two thrust bearings 77 are disposed between the bottom portion of the chamber 10 and the head of the bolt 78. One of the two thrust bearings 77 is disposed between the bottom portion of the chamber 10 and the reduced diameter portion 28s. The other thrust bearing 77 is disposed between the reduced diameter portion 28s and the head of the bolt 78. A washer 79 is disposed between the other thrust bearing 77 and the head of the bolt 78.
The conductor portion 28 has a substantially tubular shape, and an outer peripheral surface 28t of a top portion 28u thereof is tapered. An inner peripheral surface 16i of the lower end 16e of the sidewall portion 16s of the inner wall member 16 is tapered to correspond to the outer peripheral surface 28t. The outer peripheral surface 28t and the inner peripheral surface 16i are in direct or indirect contact with each other. Accordingly, the inner wall member 16 is electrically connected to the conductor portion 28. In one embodiment, a contact band 28b is disposed on the outer peripheral surface 28t. The outer peripheral surface 28t and the inner peripheral surface 16i are in indirect contact with each other via the contact band 28b. Further, the lower end of the conductor portion 28 and the bottom portion of the chamber 10 may be electrically connected via a connection member 76. The connection member 76 is a member having elasticity and conductivity, and is fixed to the bottom portion of the chamber 10. The connection member 76 is, e.g., a contact band or a conductive spiral.
In the substrate processing apparatus 1H, even if the central axis of the inner wall member 16 and the central axis of the conductor portion 28 are misaligned, the horizontal movement of the conductor portion 28 enables uniform electrical contact between the lower end 16e of the inner wall member 16 and the top portion 28u of the conductor portion 28 in the circumferential direction. Since there is less friction between the lower end 16e of the inner wall member 16 and the top portion 28u (or the contact band 28b) of the conductor portion 28, the generation of particles is suppressed.
Hereinafter,
Hereinafter,
Specifically, the expandable seal 80 is disposed in the recess on the bottom surface 14b of the support member 14. The expandable seal 80 is expanded downward by air supplied from the air supply device 81. Due to the downward expansion of the expandable seal 80, the inner wall member 16 is moved downward, thereby releasing the fixing of the inner wall member 16 to the support member 14.
While various embodiments have been described above, the present disclosure is not limited to the above-described embodiments, and various additions, omissions, substitutions and changes may be made. Further, other embodiments can be implemented by combining elements in different embodiments.
The transfer module CTM may not be movable, and may be connected and fixed to the chambers of the substrate processing apparatuses according to the above-described various embodiments. The transfer module TM may be used, instead of the transfer module CTM, as a module for transferring the inner wall member 16 between the inside of the chamber 10 and the outside of the chamber 10.
The following is description of various embodiments [E1] to [E31] included in the present disclosure.
[E1]
A substrate processing apparatus comprising:
a chamber including a sidewall having an opening;
a substrate support disposed in the chamber;
a support member disposed above the substrate support;
an inner wall member having a ceiling portion disposed above the substrate support and below the support member;
a contact member attached to one of the support member and the inner wall member and configured to detachably fix the inner wall member to the support member by applying a spring reaction force to the other of the support member and the inner wall member in a horizontal direction; and
an actuator configured to move the inner wall member downward to release the fixing of the inner wall member to the support member.
In the substrate processing apparatus of the embodiment [E1], the contact member is deformed by the other member between the support member and the inner wall member, thereby applying a spring reaction force to the other member in the horizontal direction. Accordingly, the inner wall member is fixed to the support member. Further, the fixing of the inner wall member to the support member can be easily released by moving the inner wall member downward using the actuator against the spring reaction force of the contact member. The inner wall member released from the support member can be unloaded from the chamber to the outside through the opening of the sidewall of the chamber. Therefore, in accordance with the embodiment [E1], it is possible to easily perform the maintenance of the inner wall member.
[E2]
The substrate processing apparatus of [E1], wherein a bottom surface of the support member has a recess,
an upper surface of the ceiling portion has a recess, and
the contact member includes:
[E3]
The substrate processing apparatus of [E2], wherein the contact member is detachable from the support member, and
the first portion has elasticity to be extracted from the recess of the support member by horizontal deformation thereof in the case of separating the contact member from the support member.
[E4]
The substrate processing apparatus of [E3], wherein the recess of the support member is narrowed at a lower opening thereof.
[E5]
The substrate processing apparatus of [E1], wherein the upper surface of the ceiling portion has a protrusion,
the contact member is fixed in a recess on the bottom surface of the support member and has an opening opened downward,
the contact member has a spring disposed in the recess of the contact member, and
the spring of the contact member applies the spring reaction force when the protrusion of the ceiling portion is fitted into the recess of the contact member.
[E6]
The substrate processing apparatus of [E5], wherein the contact member further includes a floating mechanism configured to support the spring.
[E7]
The substrate processing apparatus of [E5] or [E6], wherein the bottom surface of the support member has a female screw, and
an outer peripheral surface of the contact member has a male screw screwed into the female screw.
[E8]
The substrate processing apparatus of [E1], wherein the bottom surface of the support member has a recess,
the upper surface of the ceiling portion has a protrusion, and
the contact member is fixed to the ceiling portion to cover the protrusion, and has a spring that applies the spring reaction force when the protrusion and the contact member are fitted into the recess of the support member.
[E9]
The substrate processing apparatus of [E1], wherein the bottom surface of the support member has a recess,
the upper surface of the ceiling portion has a protrusion,
the contact member is a spiral spring gasket disposed along an inner wall surface that defines the recess, and
the spiral spring gasket applies the spring reaction force when the protrusion is fitted into the recess.
[E10]
The substrate processing apparatus of any one of [E1] to [E9], wherein the inner wall member is transferred between the inside of the chamber and the outside of the chamber through the opening by a transfer arm.
[E11]
The substrate processing apparatus of any one of [E1] to [E10], further comprising:
a heat transfer sheet embedded between the support member and the ceiling portion.
[E12]
The substrate processing apparatus of any one of [E1] to [E11], wherein the support member and the ceiling portion constitute a shower head configured to supply a gas into the chamber.
[E13]
The substrate processing apparatus of any one of [E1] to [E12], wherein the support member has a flow path through which a heat medium flows.
[E14]
The substrate processing apparatus of any one of [E1] to [E13], wherein the inner wall member further has a sidewall portion extending downward from a peripheral edge of the ceiling portion, and forms, together with the substrate support, a processing space in which a substrate placed on the substrate support is processed.
[E15]
The substrate processing apparatus of [E14], wherein the substrate processing apparatus is a plasma processing apparatus.
[E16]
The substrate processing apparatus of [E15], further comprising:
a conductor portion having a tubular shape, extending along an outer circumference of the substrate support, and being grounded; and
a contact mechanism that electrically connects a lower end of the sidewall portion to the conductor portion to electrically connect the inner wall member to the conductor portion.
[E17]
The substrate processing apparatus of [E16], wherein the contact mechanism includes:
a tubular body made of a conductive material, electrically connected to the conductor portion, and extending along an outer circumference of the conductor portion;
a pressing body made of a conductive material and disposed between the substrate support and the tubular body; and
a driving device configured to rotate the tubular body along a circumferential direction,
wherein the contact mechanism is configured to electrically connect the inner wall member to the conductor portion via the pressing body and the tubular body by pressing the pressing body against an outer peripheral surface of the lower end of the sidewall portion by rotating the tubular body in the circumferential direction.
[E18]
The substrate processing apparatus of [E16], wherein an upper end of the conductor portion has a recess extending in the circumferential direction,
the contact mechanism includes another contact member having elasticity,
said another contact member extends in the circumferential direction in the recess of the conductor portion and is electrically connected to the conductor portion, and
said another contact member is configured to electrically connect the inner wall member to the conductor portion via said another contact member while being in elastic contact with the lower end of the sidewall portion in the recess.
[E19]
The substrate processing apparatus of [E16], wherein the contact mechanism includes:
a plurality of male connectors attached to one of the lower end of the sidewall portion and the upper end of the conductor portion; and
a plurality of female connectors attached to the other of the lower end of the sidewall portion and the upper end of the conductor portion,
wherein the contact mechanism is configured to electrically connect the inner wall member to the conductor portion by coupling the male connectors and corresponding female connectors among the female connectors.
[E20]
The substrate processing apparatus of [E16], wherein the contact mechanism includes another contact member to be in contact with a bottom surface of the lower end of the sidewall portion, and
the contact mechanism is configured to electrically connect the inner wall member to the conductor portion via said another contact member by pressing said another contact member against the bottom surface of the sidewall portion.
[E21]
The substrate processing apparatus of [E20], wherein the contact mechanism is configured to press said another contact member against the bottom surface of the sidewall portion by a pressure of fluid.
[E22]
The substrate processing apparatus of [E20], wherein the contact mechanism further includes:
a piezoelectric element configured to press said another contact member against the bottom surface of the sidewall portion.
[E23]
The substrate processing apparatus of any one of [E1] to [E22], wherein the support member constitutes an upper electrode of a capacitively coupled plasma processing apparatus.
[E24]
The substrate processing apparatus of [E16], wherein the conductor portion has therein a cavity extending along the circumferential direction about a central axis of the conductor portion and an opening extending between the cavity and a space outside the conductor portion,
the contact mechanism includes:
a pressing body made of a conductive material and having a first portion disposed between the expandable seal and a wall of the conductor portion that defines the opening in the cavity and a second portion extending from the first portion into the opening;
wherein the pressing body is configured to embed the elastic body between the first portion and the wall of the conductor portion when the expandable seal is expanded by the air from the air supply device, and to bring a tip end of the second portion into contact with an inner peripheral surface of the lower end of the sidewall portion.
[E25]
The substrate processing apparatus of [E24], wherein the tip end of the second portion is formed as a contact band.
[E26]
The substrate processing apparatus of [E24] or [E25], wherein the elastic body is a canted coil spring.
[E27]
The substrate processing apparatus of [E15], further comprising:
a conductor portion having a tubular shape and extending along the outer circumference of the substrate support, the conductor portion being grounded and slidable in a horizontal direction above a bottom portion of the chamber,
wherein an outer peripheral surface of a top portion of the conductor portion is a tapered surface,
the inner peripheral surface of the lower end of the sidewall portion is a tapered surface corresponding to the outer peripheral surface of the top portion of the conductor portion, and
the outer peripheral surface of the top portion of the conductor portion and the inner peripheral surface of the lower end of the sidewall portion are configured to be in direct or indirect contact with each other.
[E28]
The substrate processing apparatus of [E27], further comprising:
a contact band disposed on the outer peripheral surface of the top portion of the conductor portion.
[E29]
The substrate processing apparatus of [E27] or [E28], further comprising:
a thrust bearing disposed between the bottom portion of the chamber and a head of a bolt screwed to the bottom portion,
wherein the conductor portion is slidably supported above the bottom portion of the chamber via the thrust bearing.
[E30]
A maintenance method for a substrate processing apparatus, comprising:
loading an inner wall member from the outside of a chamber of a substrate processing apparatus into the chamber through an opening of a sidewall of the chamber by a transfer arm, the substrate processing apparatus including the chamber, a substrate support disposed in the chamber, and a support member disposed above the substrate support, the inner wall member having a ceiling portion disposed above the substrate support and below the support member; and
detachably fixing the inner wall member to the support member by moving one of the support member and the inner wall member in a vertical direction, wherein the inner wall member is fixed to the support member when the contact member attached to one of the support member and the inner wall member applies a spring reaction force to the other one of the support member and the inner wall member in a horizontal direction.
[E31]
A maintenance method for a substrate processing apparatus, comprising:
allowing a transfer arm to enter a chamber of a substrate processing apparatus from the outside of the chamber through an opening of a sidewall of the chamber, the substrate processing apparatus including the chamber, a substrate support disposed in the chamber, a support member disposed above the substrate support, an inner wall member having a ceiling portion disposed above the substrate support and below the support member, and a contact member attached to one of the support member and the inner wall member, wherein the contact member is configured to detachably fix the inner wall member to the support member by applying a spring reaction force to the other of the support member and the inner wall member in a horizontal direction;
transferring the inner wall member to the transfer arm by moving the inner wall member downward using an actuator to release the fixing of the inner wall member by the contact member; and
unloading the inner wall member from the inside of the chamber to the outside of the chamber through the opening.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosures. Indeed, the embodiments described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosures. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosures.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2021-144494 | Sep 2021 | JP | national |
| 2022-049553 | Mar 2022 | JP | national |
| 2022-136129 | Aug 2022 | JP | national |
