Thin film pattern forming device and method

Abstract

A thin film pattern forming device includes a chamber having an inner space communicated with the outside, a first fixing unit provided in the chamber case, a pattern electrode plate having a protrusion electrode protruded with a certain shape, and fixed to the first fixing unit, a second fixing unit provided in the chamber case and spaced apart with a certain gap from the pattern electrode plate, for fixing a substrate on which an inked metallic nano-material is deposited, a power supply unit for supplying power to the first fixing unit and the second fixing unit so as to form electrodes thereat, and a drying unit for drying the inked metallic nano-material patterned on the substrate. A metal thin film line such as a gate line can be simply formed on the substrate, and a processing time can be shortened. Furthermore, required equipment is simplified thus to reduce an installation cost and to enhance a productivity.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.

In the drawings:

FIG. 1 is a schematic cross section view showing a sputtering device in accordance with the related art;

FIG. 2 is a flowchart showing a process for forming a metal thin film pattern on a substrate in accordance with the related art;

FIG. 3 is a schematic cross-section view showing a thin film pattern forming device according to the present invention;

FIG. 4 is an enlarged partial view showing details of a pattern electrode plate of the thin film pattern forming device in FIG. 3 according to the present invention;

FIGS. 5 and 6 are enlarged partial views showing details of a second fixing unit of the thin film pattern forming device in FIG. 3 according to the present invention;

FIG. 7 is a flowchart showing steps of a process for forming a thin film pattern on a substrate according to the present invention; and

FIG. 8 is a schematic view showing an operation state of the thin film pattern forming device according to the present invention.

Claims

1. A thin film pattern forming device, comprising: a chamber enclosing an inner space and communicated with the outside;a first fixing unit provided in the chamber case;a pattern electrode plate having a protrusion electrode protruded with a certain shape, and fixed to the first fixing unit;a second fixing unit provided in the chamber case and spaced apart with a certain gap from the pattern electrode plate, for fixing a substrate on which an inked metallic nano material is deposited;a power supply unit for supplying power to the first fixing unit and the second fixing unit so as to form electrodes thereat; anda drying unit for drying the inked metallic nano material after being patterned on the substrate.

2. The thin film pattern forming device of claim 1, wherein a power supplying line is provided at the protrusion electrode of the pattern electrode plate.

3. The thin film pattern forming device of claim 1, wherein a protrusion electrode protruded with a shape corresponding to that of the pattern electrode plate is provided at the second fixing unit.

4. The thin film pattern forming device of claim 1, wherein a power supply line is provided at the protrusion electrode of the second fixing unit.

5. The thin film pattern forming device of claim 1, wherein the drying unit dries the inked metallic nano material patterned on the substrate by irradiating ultraviolet light.

6. A thin film pattern forming method, comprising: depositing an inked metallic nano material on a substrate;applying a flux of electrons in a predetermined pattern onto the substrate with the inked metallic nano-material deposited thereon; anddrying the inked metallic nano-material patterned in the predetermined pattern by the electron flux.

7. The method of claim 6, wherein said process is entirely performed under an ambient atmospheric pressure state.