Three-dimensional integrated device

Abstract

A three-dimensional integrated device includes at least two integrated circuit substrates laminated to each other, each of the integrated circuit substrates having at least one ground plane, at least one aperture provided at a desired location in the ground plane, the end of a microstrip line formed in a pair with the ground plane and placed in the aperture, and a transmitter and/or a receiver that is connected to the microstrip line and transmits and/or receives signals at a frequency substantially corresponding to the perimeter λ of the aperture. Each of the apertures in each of the integrated circuit substrates is superimposed on at least one of the apertures in the other integrated circuit substrates in the direction perpendicular to the ground planes, and the signals are transported in a contactless manner between the integrated circuit substrates through the apertures at a frequency substantially corresponding to the perimeter λ of the apertures.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view diagrammatically showing an exemplary configuration of the three-dimensional integrated device to which the invention is applied;

FIG. 2 is a perspective view diagrammatically showing another exemplary configuration of the three-dimensional integrated device to which the invention is applied;

FIGS. 3A and 3B diagrammatically show a PBG structure formed on a silicon substrate;

FIG. 4 is a cross-sectional view diagrammatically showing still another exemplary configuration of the three-dimensional integrated device to which the invention is applied; and

FIG. 5 is a cross-sectional view diagrammatically showing still another exemplary configuration of the three-dimensional integrated device having a PBG structure to which the invention is applied.

Claims

1. A three-dimensional integrated device comprising: at least two integrated circuit substrates laminated to each other, each of the integrated circuit substrates having at least one ground plane, at least one aperture provided at a desired location in the ground plane, the end of a microstrip line formed in a pair with the ground plane and placed in the aperture, and a transmitter and/or a receiver that is connected to the microstrip line and transmits and/or receives signals at a frequency substantially corresponding to the perimeter λ of the aperture,wherein each of the apertures in each of the integrated circuit substrates is superimposed on at least one of the apertures in the other integrated circuit substrates in the direction perpendicular to the ground planes, andthe signals are transported in a contactless manner between the integrated circuit substrates through the apertures at a frequency substantially corresponding to the perimeter λ of the apertures.

2. The three-dimensional integrated device according to claim 1, wherein at least one of the integrated circuit substrates has a pattern formed therein, the pattern having a periodic structure created according to a genetic algorithm, and the period of the pattern is about λ/4.

3. The three-dimensional integrated device according to claim 2, wherein the periodic structure, is formed at the bottom of the silicon substrate, and the pattern in a conductive portion of the silicon substrate is created by utilizing the change in carrier concentration of the silicon substrate itself.

4. The three-dimensional integrated device according to claim 1, wherein one end of the microstrip line connected to the transmitter and one end of the microstrip line connected to the receiver are formed in each of the apertures, and when one of the integrated circuit substrates functions as the signal transmission side, the other integrated circuit substrates function as the reception side.

5. The three-dimensional integrated device according to claim 1, wherein each of the integrated circuit substrates has an aperture where one end of the microstrip line connected to the transmitter is formed and an aperture where one end of the microstrip line connected to the receiver is formed, and each of the integrated circuit substrates functions as the signal transmission side and the signal reception side, so that one of the integrated circuit substrates successively transports signals to the other integrated circuit substrates.

6. The three-dimensional integrated device according to claim 1, wherein each of the integrated circuit substrates is formed of a silicon substrate having at least one through via for power supply and ground wiring, and the integrated circuit substrates are laminated to each other through bumps electrically connected to the through via.