Claims
- 1. A composition, comprising:
(a) a polymer precursor that upon heating to a cure temperature cross-links to form an organic polysilica layer; and (b) a sufficient amount of porogen that the layer has a porosity of from about 5% to about 80%, wherein the porogen is non-reactive with the polymer precursor, wherein the porogen at a decomposition temperature greater than the cure temperature decomposes to form a gas phase that is non-deleterious to the organic polysilica layer and diffuses out of the layer, and wherein the decomposition temperature is sufficiently low so that the organic polysilica layer is not deleteriously affected at the decomposition temperature.
- 2. The composition of claim 1 wherein the porogen is an organic dendrimer polymer.
- 3. The composition of claim 1 wherein the porogen is hyperbranched organic polymer.
- 4. The composition of claim 1 wherein the polymer precursor is a polyorganosilsesquioxane.
- 5. The composition of claim 1 further comprising an adhesion promoter.
- 6. The composition of claim 1 further comprising a surfactant.
- 7. The composition of claim 1 wherein the layer formed contains substantially no porogen or its decomposition products.
- 8. The composition of claim 1 or 3 wherein the porogen is a polyesteramide.
- 9. The composition of claim 1 or 2 wherein the porogen is a poly (propylene imine).
- 10. A dielectric material formed by heating the composition of claim 1 to a temperature greater than the decomposition temperature of the porogen.
- 11. The dielectric material of claim 10 having substantially spherical pores with a diameter in the range of about 10 Å to about 100 Å.
- 12. A process for forming an integrated circuit, comprising the steps of:
(a) positioning on a substrate a layer of dielectric composition comprising a decomposable polymer and a polymer precursor that cures at a cure temperature to form an organic polysilica layer, wherein the decomposable polymer is non-reactive with the polymer precursor; and (b) heating the dielectric composition to a cure temperature and to a decomposition temperature so that the polymer precursor cross-links to form an organic polysilica and the decomposable polymer decomposes to form pores in the organic polysilica layer.
- 13. The process of claim 12 comprising the additional steps of:
(c) lithographically patterning the dielectric layer; and (d) depositing a metallic film onto the patterned dielectric layer.
- 14. The process of claim 12 wherein the decomposition temperature is greater than the cure temperature and wherein the decomposition temperature is sufficiently low that the organic polysilica layer is not deleteriously affected at the decomposition temperature.
- 15. The process of claim 12 wherein the cure temperature is from about 100° C. to about 200° C. and the decomposition temperature is from about 300° C. to about 450° C.
- 16. The process of claim 12 wherein the heating takes place in an atmosphere of inert gas.
- 17. A process for forming an integrated circuit, comprising the steps of:
(a) depositing a metallic film on a substrate; (b) lithographically patterning the metallic film; (c) depositing on the patterned metallic film, a layer of a dielectric composition comprising a polymer precursor and a decomposable polymer, wherein the decomposable poly, wherein the decomposable polymer is non-reactive with the polymer precursor; and (d) heating the composition to a cure temperature and to a decomposition temperature so that the polymer precursor cross-links to form an organic polysilica and so that the decomposable polymer decomposes to form a porous dielectric layer.
- 18. The dielectric material of claim 11 having a dielectric constant of less than 2.5.
- 19. The process of claim 12 wherein the porous polysilica layer has a dielectric constant of less than 2.5.
- 20. The process of claim 17 wherein the dielectric layer has a dielectric constant of less than 2.5.
- 21. The process of claim 12 or 17 wherein the step of heating comprises heating the composition at a rate of greater than 30° C./minute.
- 22. The process of claim 12 or 17 wherein the step of heating comprises heating the composition to the decomposition temperature in less than 10 minutes.
- 23. The composition of claim 1 in a solvent which dissolves both the polymer precursor and the porogen.
- 24. The process of claim 12 or 17 wherein the dielectric composition is dissolved in a solvent.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of U.S. Provisional Application No. 60/267,921 filed on Feb. 12, 2001, which is incorporated herein by reference.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
[0002] This invention was made with Government support under Contract F33615-98-C-1336 awarded by the Department of the Air Force. The Government has certain rights in the invention.
Provisional Applications (1)
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Number |
Date |
Country |
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60267921 |
Feb 2001 |
US |