Claims
- 1. An X-ray mask support comprising a support frame and a support film, wherein said support frame comprises the same compound as that of said support film, and said compound is selected from the group consisting of silicon carbide and silicon nitride, and both said support frame and said support film have a thermal expansion coefficient of not more than 1.times.10.sup.-5 K.sup.-1.
- 2. The X-ray mask support of claim 1, wherein Young's modulus of said support film is uniform over the entire film.
- 3. The X-ray mask support of claim 1, wherein Young's modulus of said support film is not less than 10 GPa.
- 4. The X-ray mask support of claim 1, wherein said support film has a uniform film thickness over the entire film.
- 5. The X-ray mask support of claim 1, wherein said support film has a film thickness of from 1 to 5 .mu.m.
- 6. The X-ray mask support of claim 1, wherein said support film has a film thickness of from 2 to 4 .mu.m.
- 7. The X-ray mask support of claim 1, wherein said support film has a surface roughness at least on the mask surface, of not more than 10 nm r.m.s.
- 8. The X-ray mask support of claim 1, wherein said support frame and support film have a thermal conductivity of not less than 4 W/m.multidot.K.
- 9. An X-ray mask support comprising a support frame and a support film, wherein said support frame and said support film comprise a compound selected from the group consisting of silicon carbide and silicon nitride, and the thermal expansion coefficient of said support film does not exceed the thermal expansion coefficient of said support frame.
- 10. The X-ray mask support of claim 9, wherein said support frame and support film independently comprise a material selected from the group consisting of silicon carbide and silicon nitride.
- 11. The X-ray mask support of claim 9, wherein said support frame comprises the same material as that of the said support film, said material being selected from the group consisting of silicon carbide and silicon nitride.
- 12. The X-ray mask support of claim 9, wherein said support frame and support film have a thermal conductivity of not less than 4 W/m.multidot.K.
- 13. The X-ray mask support of claim 12, wherein both said support frame and support film have a thermal expansion coefficient of not more than 1.times.10.sup.-5 K.sup.-1.
- 14. The X-ray mask support of claim 12, wherein Young's modulus of said support film is uniform over the entire film.
- 15. The X-ray mask support of claim 12, wherein Young's modulus of said support film is not less than 10 GPa.
- 16. The X-ray mask support of claim 12, wherein said support film has a uniform film thickness over the entire film.
- 17. The X-ray mask support of claim 12, wherein said support film has a film thickness of from 1 to 5 .mu.m.
- 18. The X-ray mask support of claim 12, wherein said support film has a film thickness of from 2 to 4 .mu.m.
- 19. The X-ray mask support of claim 12, wherein said support film has a surface roughness at least on the mask surface, of not more than 10 nm r.m.s.
- 20. An X-ray mask support comprising:
- a support frame; and
- a support film, wherein said support frame and said support film are integrally formed and comprise a compound selected from the group consisting of silicon carbide and silicon nitride.
- 21. An X-ray mask support of claim 20, wherein Young's modulus of said support film is uniform over the entire film.
- 22. An X-ray mask support of claim 20, wherein Young's modulus of said support film is not less than 10 GPa.
- 23. An X-ray mask support of claim 20, wherein said support film has a uniform film thickness over the entire film.
- 24. An X-ray mask support of claim 20, wherein said support film has a thickness of from 1 to 5 .mu.m.
- 25. An X-ray mask support of claim 20, wherein said support film has a film thickness of from 2 to 4 .mu.m.
- 26. An X-ray mask support of claim 20, wherein said support film has a surface roughness at least on the mask surface, of not more than 10 nm r.m.s.
- 27. An X-ray mask support of claim 20, wherein said support frame and support film have a thermal conductivity of not less than 4 W/m.multidot.K.
- 28. An X-ray mask comprising a support frame, a support film and an X-ray absorber formed on said support film, wherein said support frame comprises the same compound as that of said support film, and said compound is selected from the group consisting of silicon carbide and silicon nitride, and both said support frame and said support film have a thermal expansion coefficient of not more than 1.times.10.sup.-5 K.sup.-1.
- 29. The X-ray mask of claim 28, wherein Young's modulus of said support film is uniform over the entire film.
- 30. The X-ray mask of claim 28, wherein Young's modulus of said support film is not less than 10 GPa.
- 31. The X-ray mask of claim 28, wherein said support film has a uniform film thickness over the entire film.
- 32. The X-ray mask of claim 28, wherein said support film has a film thickness of from 1 to 5 .mu.m.
- 33. The X-ray mask of claim 28, wherein said support film has a film thickness of from 2 to 4 .mu.m.
- 34. The X-ray mask of claim 28, wherein said suport film has a surface roughness, at least on the mask surface, of not more than 10 nm r.m.s.
- 35. The X-ray mask of claim 28, wherein said support frame and support film have a thermal conductivity of not less than 4 W/m.multidot.K.
- 36. An X-ray mask comprising a support frame, a support film and an X-ray absorber formed on said support film, wherein said support frame and said support film comprise a compound selected from the group consisting of silicon carbide and silicon nitride, and thermal expansion coefficient of said support film does not exceed the thermal expansion coefficient of said support frame.
- 37. The X-ray mask of claim 36, wherein both said support frame and support film have a thermal expansion coefficient of not more than 1.times.10.sup.-5 K.sup.-1.
- 38. The X-ray mask of claim 36, wherein Young's modulus of said support film is uniform over the entire film.
- 39. The X-ray mask of claim 36, wherein Young's modulus of said support film is not less than 10 GPa.
- 40. The X-ray mask of claim 36, wherein said support film has a uniform film thickness over the entire film.
- 41. The X-ray mask of claim 36, wherein said support film has a film thickness of from 1 to 5 .mu.m.
- 42. The X-ray mask of claim 36, wherein said support film has a film thickness of from 2 to 4 .mu.m.
- 43. The X-ray mask of claim 36, wherein said support film has a surface roughness, at least on the mask surface, of not more than 10 nm r.m.s.
- 44. The X-ray mask of claim 36, wherein said support frame and support film have a thermal conductivity of not less than 4 W/m.multidot.K.
- 45. The X-ray mask of claim 36, wherein said support frame and support film independently comprise a material selected from the group consisting of silicon carbide and silicon nitride.
- 46. The X-ray mask of claim 36, wherein said support frame comprises the same material as that of said support film, said material being selected from the group consisting of silicon carbide and silicon nitride.
- 47. An X-ray mask comprising a support frame, a support film and an X-ray absorber formed on said support film, wherein said support frame and said support film are integrally formed and comprise a compound selected from the group consisting of silicon carbide and silicon nitride.
- 48. An X-ray mask of claim 47, wherein Young's modulus of said support film is uniform over the entire film.
- 49. An X-ray mask of claim 47, wherein Young's modulus of said support film is not less than 10 GPa.
- 50. An X-ray mask of claim 47, wherein said support film has a uniform film thickness over the entire film.
- 51. An X-ray mask of claim 47, wherein said suport film has a thickness of from 1 to 5 .mu.m.
- 52. An X-ray mask of claim 47, wherein said support film has a film thickness of from 2 to 4 .mu.m.
- 53. An X-ray mask of claim 47, wherein said support film has a surface roughness, at least on the mask surface, of not more than 10 nm r.m.s.
- 54. An X-ray mask of claim 47, wherein said support frame and support film have a thermal conductivity of not less than 4 W/m.multidot.K.
- 55. An X-ray lithography processing method comprising the steps of:
- irradiating an X-ray mask with X-rays, wherein the X-ray mask includes a suport frame, a support film and an X-ray absorber formed on the support film, wherein the support frame comprises the same compound as that of the support film, and the compound is selected from the group consisting of silicon carbide and silicon nitride, and both the support frame and the support film have a thermal expansion coefficient of not more than 1.times.10.sup.-5 K.sup.-1 ; and
- transferring patterns of the X-ray absorber to a wafer.
- 56. The X-ray lithography processing method of claim 55, wherein Young's modulus of the support film is uniform over the entire film.
- 57. The X-ray lithography processing method of claim 55, wherein Young's modulus of the support film is not less than 10 GPa.
- 58. The X-ray lithography processing method of claim 55, wherein the support film has a uniform film thickness over the entire film.
- 59. The X-ray lithography processing method of claim 55, wherein the support film has a film thickness of from 1 to 5 .mu.m.
- 60. The X-ray lithography processing method of claim 55, wherein the support film has a film thickness of from 2 to 4 .mu.m.
- 61. The X-ray lithography processing method of claim 55, wherein the support film has a surface roughness, at least on the mask surface, of not more than 10 nm r.m.s.
- 62. The X-ray lithography processing method of claim 55, wherein the support frame and support film have a thermal conductivity of not less than 4 W/m.multidot.K.
- 63. An X-ray lithography processing method comprising the steps of:
- irradiating an X-ray mask with X-rays, wherein the X-ray mask includes a support frame, a support film and an X-ray absorber formed on the support film, wherein the support frame and the support film comprise a compound selected from the group consisting of silicon carbide and silicon nitride, and the thermal expansion coefficient of the support film does not exceed the thermal expansion coefficient of the support frame; and
- transferring patterns of the X-ray absorber to a wafer.
- 64. The X-ray lithography processing method of claim 63, wherein both the support frame and support film have a thermal expansion coefficient of not more than 1.times.10.sup.-5 K.sup.-1.
- 65. The X-ray lithography processing method of claim 63, wherein Young's modulus of the support film is uniform over the entire film.
- 66. The X-ray lithography processing method of claim 63, wherein Young's modulus of the support film is not less than 10 GPa.
- 67. The X-ray lithography processing method of claim 63, wherein the support film has a uniform film thickness over the entire film.
- 68. The X-ray lithography processing method of claim 63, wherein the support film has a film thickness of from 1 to 5 .mu.m.
- 69. The X-ray lithography processing method of claim 63, wherein the support film has a film thickness of from 2 to 4 .mu.m.
- 70. The X-ray lithography processing method of claim 63, wherein the support film has a surface roughness, at least on the mask surface, of not more than 10 nm r.m.s.
- 71. The X-ray lithography processing method of claim 63, wherein the support frame and support film have a thermal conductivity of not less than 4 W/m..multidot.K.
- 72. The X-ray lithography processing method of claim 63, wherein the support frame and support film independently comprise a material selected from the group consisting of silicon carbide and silicon nitride.
- 73. The X-ray lithography processing method of claim 63, wherein the support frame comprises the same material as that of support film, the material being selected from the group consisting of silicon carbide and silicon nitride.
- 74. An X-ray lithography processing method comprising the steps of:
- irradiating an X-ray mask with X-rays, wherein the X-ray mask includes a support frame, a support film and an X-ray absorber formed on the support film, wherein the support frame and the support film are integrally formed and comprise a compound selected from the group consisting of silicon carbide and silicon nitride; and
- transferring patterns of the X-ray absorber to a wafer.
- 75. An X-ray lithography processing method of claim 74, wherein Young's modulus of the support film is uniform over the entire film.
- 76. An X-ray mask lithography processing method claim 74, wherein Young's modulus of the support film is not less than 10 GPa.
- 77. An X-ray lithography processing method of claim 74, wherein the support film has a uniform film thickness over the entire film.
- 78. An X-ray lithography processing method of claim 74, wherein the support film has a thickness of from 1 to 5 .mu.m.
- 79. An X-ray lithography processing method of claim 74, wherein the support film has a film thickness of from 2 to 4 .mu.m.
- 80. An X-ray lithography processing method pf claim 74, wherein the support film has a surface roughness, at least on the mask surface, of not more than 10 nm r.m.s.
- 81. An X-ray lithography processing method of claim 74, wherein the support frame and support film have a thermal conductivity of not less than 4 W/m.multidot.W.
Priority Claims (6)
Number |
Date |
Country |
Kind |
62-244201 |
Sep 1987 |
JPX |
|
62-244202 |
Sep 1987 |
JPX |
|
62-244203 |
Sep 1987 |
JPX |
|
62-257304 |
Oct 1987 |
JPX |
|
62-268044 |
Oct 1987 |
JPX |
|
63-013487 |
Jan 1988 |
JPX |
|
Parent Case Info
This application is a continuation of prior application, Ser. No. 07/590,520 filed Sept. 28, 1990, which application is a continuation of prior application, Ser. No. 07/250,099 filed Sept. 28, 1988, both now abandoned.
US Referenced Citations (6)
Non-Patent Literature Citations (4)
Entry |
Patent Abstracts of Japan, Kokai No. 57-092830, vol. 6, No. 176, Sep. 10, 1982. |
Patent Abstracts of Japan, Kokai No. 59-202530, vol. 8, No. 49, Mar. 6, 1984. |
Suzuki et al., "High Flatness Mask for Step and Repeat X-Ray Lithography", J. Vac. Sci. Technol. B4(1), Jan./Feb. 1986, pp. 221 through 225. |
Madouri et al., "Non Hydrogenated Materials for X-Ray Masks", Microelectronic Engineering 12/1987, pp. 241 through 245. |
Continuations (2)
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Number |
Date |
Country |
Parent |
590520 |
Sep 1990 |
|
Parent |
250099 |
Sep 1988 |
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