Beth R. Cook

Person

Meridian, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices including ferroelectric materials
- Patent number 12,167,610
- Issue date Dec 10, 2024
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and methods of forming a capacitor including current l...
- Patent number 11,935,574
- Issue date Mar 19, 2024
- Micron Technology, Inc.
- Michael Mutch
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming structures containing leaker-devices and memory...
- Patent number 11,711,924
- Issue date Jul 25, 2023
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of incorporating leaker devices into capacitor configuratio...
- Patent number 11,676,768
- Issue date Jun 13, 2023
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells comprising ferroelectric material and including curren...
- Patent number 11,600,691
- Issue date Mar 7, 2023
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of incorporating leaker devices into capacitor configuratio...
- Patent number 11,404,217
- Issue date Aug 2, 2022
- Micron Technology, Inc.
- Ashonita A. Chavan
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of incorporating leaker-devices into capacitor configuratio...
- Patent number 11,315,939
- Issue date Apr 26, 2022
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells and methods of forming a capacitor including current l...
- Patent number 11,170,834
- Issue date Nov 9, 2021
- Micron Technology, Inc.
- Michael Mutch
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices including ferroelectric materials
- Patent number 11,043,502
- Issue date Jun 22, 2021
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of incorporating leaker-devices into capacitor configuratio...
- Patent number 10,903,218
- Issue date Jan 26, 2021
- Micron Technology, Inc.
- Alessandro Calderoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells comprising ferroelectric material and including curren...
- Patent number 10,879,344
- Issue date Dec 29, 2020
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of incorporating leaker-devices into capacitor configuratio...
- Patent number 10,833,092
- Issue date Nov 10, 2020
- Micron Technology, Inc.
- Alessandro Calderoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a capacitor comprising ferroelectric material an...
- Patent number 10,680,057
- Issue date Jun 9, 2020
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of incorporating leaker devices into capacitor configuratio...
- Patent number 10,650,978
- Issue date May 12, 2020
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including ferroelectric materials
- Patent number 10,403,630
- Issue date Sep 3, 2019
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells comprising ferroelectric material and including curren...
- Patent number 10,396,145
- Issue date Aug 27, 2019
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory devices
- Patent number 10,090,462
- Issue date Oct 2, 2018
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a ferroelectric memory cell
- Patent number 10,062,703
- Issue date Aug 28, 2018
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures including ferroelectric memory cells
- Patent number 9,698,343
- Issue date Jul 4, 2017
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interfacial cap for electrode contacts in memory cell arrays
- Patent number 9,691,976
- Issue date Jun 27, 2017
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Scott Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells
- Patent number 9,431,606
- Issue date Aug 30, 2016
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Filamentary memory devices and methods
- Patent number 9,324,943
- Issue date Apr 26, 2016
- Micron Technology, Inc.
- Lei Bi
- G11 - INFORMATION STORAGE
Information Patent Grant
Interfacial cap for electrode contacts in memory cell arrays
- Patent number 9,306,162
- Issue date Apr 5, 2016
- Sony Corporation
- Scott Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a ferroelectric memory cell
- Patent number 9,231,206
- Issue date Jan 5, 2016
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory devices
- Patent number 9,224,945
- Issue date Dec 29, 2015
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming a programmable region that comprises a multivale...
- Patent number 8,809,157
- Issue date Aug 19, 2014
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Filamentary memory devices and methods
- Patent number 8,797,784
- Issue date Aug 5, 2014
- Micron Technology, Inc.
- Lei Bi
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming a memory cell having programmable material that...
- Patent number 8,633,084
- Issue date Jan 21, 2014
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED TECHNIQUES FOR FORMING CONNECTIONS IN A MEMORY DEVICE
- Publication number 20240045604
- Publication date Feb 8, 2024
- Micron Technology, Inc.
- Zhuo Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE ASSEMBLY WITH NON-IMPINGED LEAKER DEVICES
- Publication number 20230397435
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Beth R. COOK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Incorporating Leaker Devices into Capacitor Configuratio...
- Publication number 20220367118
- Publication date Nov 17, 2022
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Structures Containing Leaker-Devices and Memory...
- Publication number 20220199634
- Publication date Jun 23, 2022
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells And Methods Of Forming A Capacitor Including Current L...
- Publication number 20220028442
- Publication date Jan 27, 2022
- Micron Technology, Inc.
- Michael Mutch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS
- Publication number 20210313339
- Publication date Oct 7, 2021
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Incorporating Leaker-Devices into Capacitor Configuratio...
- Publication number 20210134816
- Publication date May 6, 2021
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells Comprising Ferroelectric Material And Including Curren...
- Publication number 20210104597
- Publication date Apr 8, 2021
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells And Methods Of Forming A Capacitor Including Current L...
- Publication number 20210012824
- Publication date Jan 14, 2021
- Micron Technology, Inc.
- Michael Mutch
- G11 - INFORMATION STORAGE
Information Patent Application
Methods of Incorporating Leaker-Devices into Capacitor Configuratio...
- Publication number 20200328221
- Publication date Oct 15, 2020
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells Comprising Ferroelectric Material And Including Curren...
- Publication number 20200279907
- Publication date Sep 3, 2020
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Incorporating Leaker Devices into Capacitor Configuratio...
- Publication number 20200243267
- Publication date Jul 30, 2020
- Micron Technology, Inc.
- Ashonita A. Chavan
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF INCORPORATING LEAKER-DEVICES INTO CAPACITOR CONFIGURATIO...
- Publication number 20200235111
- Publication date Jul 23, 2020
- Micron Technology, Inc.
- Alessandro Calderoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Devices and Methods of Forming Ferroelectric Devices
- Publication number 20200227423
- Publication date Jul 16, 2020
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS
- Publication number 20190386015
- Publication date Dec 19, 2019
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods Of Forming A Capacitor Comprising Ferroelectric Material An...
- Publication number 20190355803
- Publication date Nov 21, 2019
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Incorporating Leaker Devices into Capacitor Configuratio...
- Publication number 20190189357
- Publication date Jun 20, 2019
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS
- Publication number 20180350824
- Publication date Dec 6, 2018
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells and Methods of Forming a Capacitor
- Publication number 20180197870
- Publication date Jul 12, 2018
- Micron Technology, Inc.
- Muralikrishnan Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Devices and Methods of Forming Ferroelectric Devices
- Publication number 20170345831
- Publication date Nov 30, 2017
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPED ELECTRODE CONTACT FOR RRAM CELLS AND MEMORY CELL ARRAYS
- Publication number 20170271587
- Publication date Sep 21, 2017
- SONY CORPORATION
- Scott Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A FERROELECTRIC MEMORY CELL
- Publication number 20170186757
- Publication date Jun 29, 2017
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACIAL CAP FOR ELECTRODE CONTACTS IN MEMORY CELL ARRAYS
- Publication number 20160181519
- Publication date Jun 23, 2016
- Scott Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH A THERMALLY INSULATING REGION
- Publication number 20160104840
- Publication date Apr 14, 2016
- Beth Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICES
- Publication number 20160086664
- Publication date Mar 24, 2016
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES INCLUDING FERROELECTRIC MEMORY CELLS
- Publication number 20160064655
- Publication date Mar 3, 2016
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACIAL CAP FOR ELECTRODE CONTACTS IN MEMORY CELL ARRAYS
- Publication number 20150194601
- Publication date Jul 9, 2015
- SONY CORPORATION
- Scott Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A FERROELECTRIC MEMORY CELL AND RELATED SEMICOND...
- Publication number 20150076437
- Publication date Mar 19, 2015
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILAMENTARY MEMORY DEVICES AND METHODS
- Publication number 20140339491
- Publication date Nov 20, 2014
- Lei Bi
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH NON-VOLATILE MEMORY AND METHOD OF MA...
- Publication number 20140306172
- Publication date Oct 16, 2014
- SONY CORPORATION
- Scott Sills
- H01 - BASIC ELECTRIC ELEMENTS

Beth R. Cook

Person

Patents Grantslast 30 patents

Semiconductor devices including ferroelectric materials

Memory cells and methods of forming a capacitor including current l...

Methods of forming structures containing leaker-devices and memory...

Methods of incorporating leaker devices into capacitor configuratio...

Memory cells comprising ferroelectric material and including curren...

Methods of incorporating leaker devices into capacitor configuratio...

Methods of incorporating leaker-devices into capacitor configuratio...

Memory cells and methods of forming a capacitor including current l...

Semiconductor devices including ferroelectric materials

Methods of incorporating leaker-devices into capacitor configuratio...

Memory cells comprising ferroelectric material and including curren...

Methods of incorporating leaker-devices into capacitor configuratio...

Methods of forming a capacitor comprising ferroelectric material an...

Methods of incorporating leaker devices into capacitor configuratio...

Semiconductor devices including ferroelectric materials

Memory cells comprising ferroelectric material and including curren...

Resistive memory devices

Methods of forming a ferroelectric memory cell

Semiconductor device structures including ferroelectric memory cells

Interfacial cap for electrode contacts in memory cell arrays

Memory cells

Filamentary memory devices and methods

Interfacial cap for electrode contacts in memory cell arrays

Methods of forming a ferroelectric memory cell

Resistive memory devices

Methods of forming a programmable region that comprises a multivale...

Filamentary memory devices and methods

Methods of forming a memory cell having programmable material that...

Patents Applicationslast 30 patents

SELF-ALIGNED TECHNIQUES FOR FORMING CONNECTIONS IN A MEMORY DEVICE

MEMORY DEVICE ASSEMBLY WITH NON-IMPINGED LEAKER DEVICES

Methods of Incorporating Leaker Devices into Capacitor Configuratio...

Methods of Forming Structures Containing Leaker-Devices and Memory...

Memory Cells And Methods Of Forming A Capacitor Including Current L...

SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS

Methods of Incorporating Leaker-Devices into Capacitor Configuratio...

Memory Cells Comprising Ferroelectric Material And Including Curren...

Memory Cells And Methods Of Forming A Capacitor Including Current L...

Methods of Incorporating Leaker-Devices into Capacitor Configuratio...

Memory Cells Comprising Ferroelectric Material And Including Curren...

Methods of Incorporating Leaker Devices into Capacitor Configuratio...

METHODS OF INCORPORATING LEAKER-DEVICES INTO CAPACITOR CONFIGURATIO...

Ferroelectric Devices and Methods of Forming Ferroelectric Devices

SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS

Methods Of Forming A Capacitor Comprising Ferroelectric Material An...

Methods of Incorporating Leaker Devices into Capacitor Configuratio...

SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS

Memory Cells and Methods of Forming a Capacitor

Ferroelectric Devices and Methods of Forming Ferroelectric Devices

CAPPED ELECTRODE CONTACT FOR RRAM CELLS AND MEMORY CELL ARRAYS

METHODS OF FORMING A FERROELECTRIC MEMORY CELL

INTERFACIAL CAP FOR ELECTRODE CONTACTS IN MEMORY CELL ARRAYS

RESISTIVE MEMORY WITH A THERMALLY INSULATING REGION

RESISTIVE MEMORY DEVICES

SEMICONDUCTOR DEVICE STRUCTURES INCLUDING FERROELECTRIC MEMORY CELLS

INTERFACIAL CAP FOR ELECTRODE CONTACTS IN MEMORY CELL ARRAYS

METHODS OF FORMING A FERROELECTRIC MEMORY CELL AND RELATED SEMICOND...

FILAMENTARY MEMORY DEVICES AND METHODS

INTEGRATED CIRCUIT SYSTEM WITH NON-VOLATILE MEMORY AND METHOD OF MA...