Di-Son Kuo

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method to increase coupling ratio of source to floating gate in spl...
- Patent number 7,417,278
- Issue date Aug 26, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase coupling ratio of source to floating gate in spl...
- Patent number 7,001,809
- Issue date Feb 21, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method with trench source to increase the coupling of source to flo...
- Patent number 6,803,625
- Issue date Oct 12, 2004
- Taiwan Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked-gate flash memory cell with folding gate and increased coup...
- Patent number 6,724,036
- Issue date Apr 20, 2004
- Taiwan Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PIP capacitor for split-gate flash process
- Patent number 6,674,118
- Issue date Jan 6, 2004
- Taiwan Semiconductor Manufacturing Company
- Chung-Ker Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming sharp beak of poly by oxygen/fluorine implant to...
- Patent number 6,667,509
- Issue date Dec 23, 2003
- Taiwan Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate poly tip in split gate flash
- Patent number 6,635,922
- Issue date Oct 21, 2003
- Taiwan Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method with trench source to increase the coupling of source to flo...
- Patent number 6,624,025
- Issue date Sep 23, 2003
- Taiwan Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical split gate flash memory device in an orthogonal array of r...
- Patent number 6,583,466
- Issue date Jun 24, 2003
- Taiwan Semiconductor Manufacturing Company
- Chrong Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source side injection programming and tip erasing P-channel split g...
- Patent number 6,573,555
- Issue date Jun 3, 2003
- Taiwan Semiconductor Manufacturing Company
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming split-gate flash cell for salicide and self-alig...
- Patent number 6,559,501
- Issue date May 6, 2003
- Taiwan Semiconductor Manufacturing Company
- Hung-Cheng Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adding a poly-strip on isolation's edge to improve enduranc...
- Patent number 6,544,828
- Issue date Apr 8, 2003
- Taiwan Semiconductor Manufacturing Company
- Wen-Ting Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate flash memory device with shrunken cell and source line a...
- Patent number 6,538,276
- Issue date Mar 25, 2003
- Taiwan Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate flash cell
- Patent number 6,538,277
- Issue date Mar 25, 2003
- Taiwan Semiconductor Manufacturing Company
- Hung-Cheng Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure with protruding source in split-gate flash
- Patent number 6,534,821
- Issue date Mar 18, 2003
- Taiwan Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel EEPROM and flash EEPROM devices
- Patent number 6,509,603
- Issue date Jan 21, 2003
- Taiwan Semiconductor Manufacturing Company
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate flash cell for multiple storage
- Patent number 6,504,206
- Issue date Jan 7, 2003
- Taiwan Semiconductor Manufacturing Company
- Hung-Cheng Sung
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to fabricate a flash memory cell with a planar stacked gate
- Patent number 6,495,880
- Issue date Dec 17, 2002
- Taiwan Semiconductor Manufacturing Company
- Chrong Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Undoped polysilicon as the floating-gate of a split-gate flash cell
- Patent number 6,483,159
- Issue date Nov 19, 2002
- Taiwan Semiconductor Manufacturing Company
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate flash memory with multiple self-alignments
- Patent number 6,479,859
- Issue date Nov 12, 2002
- Taiwan Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate field effect transistor (FET) device employing dielectri...
- Patent number 6,468,863
- Issue date Oct 22, 2002
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical split gate field effect transistor (FET) device
- Patent number 6,465,836
- Issue date Oct 15, 2002
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chrong Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate flash memory device having nitride spacer to prevent int...
- Patent number 6,465,841
- Issue date Oct 15, 2002
- Taiwan Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile devices with P-channel EEPROM device as injector
- Patent number 6,455,887
- Issue date Sep 24, 2002
- Taiwan Semiconductor Manufacturing Company
- Yai-Fen Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Split-gate flash memory device having floating gate electrode with...
- Patent number 6,441,429
- Issue date Aug 27, 2002
- Taiwan, Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory cell with vertically oriented channel
- Patent number 6,437,397
- Issue date Aug 20, 2002
- Taiwan Semiconductor Manufacturing Company
- Chrong Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate field effect transistor (FET) device employing non-linea...
- Patent number 6,420,233
- Issue date Jul 16, 2002
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified nitride spacer for solving charge retention issue in float...
- Patent number 6,417,046
- Issue date Jul 9, 2002
- Taiwan Semiconductor Manufacturing Company
- Ming-Chou Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate flash cell for multiple storage
- Patent number 6,417,049
- Issue date Jul 9, 2002
- Taiwan Semiconductor Manufacturing Company
- Hung-Cheng Sung
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming poly tip to improve erasing and programming speed...
- Patent number 6,410,957
- Issue date Jun 25, 2002
- Taiwan Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method to increase coupling ratio of source to floating gate in spl...
- Publication number 20050207264
- Publication date Sep 22, 2005
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method with trench source to increase the coupling of source to flo...
- Publication number 20040018687
- Publication date Jan 29, 2004
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method with trench source to increase the coupling of source to flo...
- Publication number 20030077868
- Publication date Apr 24, 2003
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacture of vertical split gate flash memory device an...
- Publication number 20020151136
- Publication date Oct 17, 2002
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chrong Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Modified nitride spacer for solving charge retention issue in float...
- Publication number 20020142535
- Publication date Oct 3, 2002
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Ming-Chou Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SPLIT GATE FIELD EFFECT TRANSISTOR (FET) DEVICE
- Publication number 20020140022
- Publication date Oct 3, 2002
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chrong Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel split gate flash cell for multiple storage
- Publication number 20020130356
- Publication date Sep 19, 2002
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Hung-Cheng Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to increase coupling ratio of source to floating gate in spl...
- Publication number 20020109181
- Publication date Aug 15, 2002
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE FIELD EFFECT TRANSISTOR (FET) DEVICE EMPLOYING NON-LINEA...
- Publication number 20020098647
- Publication date Jul 25, 2002
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split gate field effect transistor (FET) device employing dielectri...
- Publication number 20020093044
- Publication date Jul 18, 2002
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel split-gate flash cell
- Publication number 20020027241
- Publication date Mar 7, 2002
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Hung-Cheng Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure with protruding source in split-gate flash
- Publication number 20020016039
- Publication date Feb 7, 2002
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-channel EEPROM and flash EEPROM devices and method of manufacture...
- Publication number 20010029076
- Publication date Oct 11, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PIP capacitor for split-gate flash process
- Publication number 20010026973
- Publication date Oct 4, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chung-Ker Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel method for forming split-gate flash cell for salicide and sel...
- Publication number 20010026968
- Publication date Oct 4, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Hung-Cheng Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to fabricate a new structure with multi-self-aligned for spl...
- Publication number 20010022375
- Publication date Sep 20, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating buried source to shrink chip size in memory a...
- Publication number 20010017387
- Publication date Aug 30, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for shrinking array dimensions of split gate flash memory de...
- Publication number 20010015455
- Publication date Aug 23, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to fabricate a flash memory cell with a planar stacked gate
- Publication number 20010012661
- Publication date Aug 9, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chong Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A new structure to fabricate split-gate with self-aligned source an...
- Publication number 20010012662
- Publication date Aug 9, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method to increase coupling ratio of source to floating gate in spl...

Method to increase coupling ratio of source to floating gate in spl...

Method with trench source to increase the coupling of source to flo...

Stacked-gate flash memory cell with folding gate and increased coup...

PIP capacitor for split-gate flash process

Method of forming sharp beak of poly by oxygen/fluorine implant to...

Method to fabricate poly tip in split gate flash

Method with trench source to increase the coupling of source to flo...

Vertical split gate flash memory device in an orthogonal array of r...

Source side injection programming and tip erasing P-channel split g...

Method for forming split-gate flash cell for salicide and self-alig...

Adding a poly-strip on isolation&#x00027;s edge to improve enduranc...

Split gate flash memory device with shrunken cell and source line a...

Split-gate flash cell

Structure with protruding source in split-gate flash

P-channel EEPROM and flash EEPROM devices

Split gate flash cell for multiple storage

Method to fabricate a flash memory cell with a planar stacked gate

Undoped polysilicon as the floating-gate of a split-gate flash cell

Split gate flash memory with multiple self-alignments

Split gate field effect transistor (FET) device employing dielectri...

Vertical split gate field effect transistor (FET) device

Split gate flash memory device having nitride spacer to prevent int...

Nonvolatile devices with P-channel EEPROM device as injector

Split-gate flash memory device having floating gate electrode with...

Flash memory cell with vertically oriented channel

Split gate field effect transistor (FET) device employing non-linea...

Modified nitride spacer for solving charge retention issue in float...

Split gate flash cell for multiple storage

Method of forming poly tip to improve erasing and programming speed...

Patents Applicationslast 30 patents

Method to increase coupling ratio of source to floating gate in spl...

Method with trench source to increase the coupling of source to flo...

Method with trench source to increase the coupling of source to flo...

Method of manufacture of vertical split gate flash memory device an...

Modified nitride spacer for solving charge retention issue in float...

VERTICAL SPLIT GATE FIELD EFFECT TRANSISTOR (FET) DEVICE

Novel split gate flash cell for multiple storage

Method to increase coupling ratio of source to floating gate in spl...

SPLIT GATE FIELD EFFECT TRANSISTOR (FET) DEVICE EMPLOYING NON-LINEA...

Split gate field effect transistor (FET) device employing dielectri...

Novel split-gate flash cell

Structure with protruding source in split-gate flash

P-channel EEPROM and flash EEPROM devices and method of manufacture...

PIP capacitor for split-gate flash process

Novel method for forming split-gate flash cell for salicide and sel...

Method to fabricate a new structure with multi-self-aligned for spl...

Method of fabricating buried source to shrink chip size in memory a...

Method for shrinking array dimensions of split gate flash memory de...

Method to fabricate a flash memory cell with a planar stacked gate

A new structure to fabricate split-gate with self-aligned source an...

Adding a poly-strip on isolation's edge to improve enduranc...