Hao Fang

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and system for providing contact to a first polysilicon laye...
- Patent number 8,507,969
- Issue date Aug 13, 2013
- Spansion LLC
- Mark S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing contact to a first polysilicon laye...
- Patent number 8,329,530
- Issue date Dec 11, 2012
- Spansion LLC
- Mark S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing contact to a first polysilicon laye...
- Patent number 8,183,619
- Issue date May 22, 2012
- Mark S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bitline direction shielding to avoid cross coupling between adjacen...
- Patent number 7,221,008
- Issue date May 22, 2007
- SanDisk Corporation
- George Matamis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device and a method of fabrication thereof
- Patent number 6,979,619
- Issue date Dec 27, 2005
- Advanced Micro Devices, Inc.
- Hao Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory having improved core field isolation in select gate re...
- Patent number 6,815,292
- Issue date Nov 9, 2004
- Advanced Micro Devices, Inc.
- Hao Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND type core cell structure for a high density flash memory devic...
- Patent number 6,667,511
- Issue date Dec 23, 2003
- Advanced Micro Devices, Inc.
- Hao Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for processing a semiconductor device
- Patent number 6,638,358
- Issue date Oct 28, 2003
- Advanced Micro Devices, Inc.
- Lu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory array and a method and system of fabrication thereof
- Patent number 6,610,580
- Issue date Aug 26, 2003
- Advanced Micro Devices, Inc.
- Maria C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a robust alignment mark at thin oxi...
- Patent number 6,603,211
- Issue date Aug 5, 2003
- Advanced Micro Devices, Inc.
- Michael K. Templeton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a polysilicon stringer monitor
- Patent number 6,602,776
- Issue date Aug 5, 2003
- Advanced Micro Devices, Inc.
- Masaaki Higashitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing high voltage transistor with modified field...
- Patent number 6,514,830
- Issue date Feb 4, 2003
- Advanced Micro Devices, Inc.
- Hao Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improved control of lines adjacent to a select gate usin...
- Patent number 6,495,435
- Issue date Dec 17, 2002
- Advance Micro Devices, Inc.
- Michael K. Templeton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having reduced field oxide recess and method o...
- Patent number 6,492,229
- Issue date Dec 10, 2002
- Advanced Micro Devices, Inc.
- Masaaki Higashitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for etching tunnel oxide to reduce undercutting d...
- Patent number 6,472,327
- Issue date Oct 29, 2002
- Advanced Micro Devices, Inc.
- King Wai Kelwin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a polysilicon stringer monitor
- Patent number 6,448,609
- Issue date Sep 10, 2002
- Advanced Micro Devices, Inc.
- Masaaki Higashitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type-1 polysilicon electrostatic discharge transistors
- Patent number 6,448,593
- Issue date Sep 10, 2002
- Advanced Micro Devices, Inc.
- Masaaki Higashitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for processing a semiconductor device
- Patent number 6,448,594
- Issue date Sep 10, 2002
- Advanced Micro Devices, Inc.
- Maria C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing contacts with greater tolerance for...
- Patent number 6,445,051
- Issue date Sep 3, 2002
- Advanced Micro Devices, Inc.
- Mark S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Re-oxidation approach to improve peripheral gate oxide integrity in...
- Patent number 6,436,778
- Issue date Aug 20, 2002
- Advanced Micro Devices, Inc.
- Hao Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nand flash memory with specified gate oxide thickness
- Patent number 6,429,479
- Issue date Aug 6, 2002
- Advanced Micro Devices, Inc.
- K. Michael Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing the step height of shallow trench isolation str...
- Patent number 6,420,240
- Issue date Jul 16, 2002
- Advanced Micro Devices, Inc.
- Wenge Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device with monitor structure for monitoring second ga...
- Patent number 6,410,949
- Issue date Jun 25, 2002
- Advanced Micro Devices, Inc.
- John JianShi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reduced gate aspect ratio to improve gap-fill after spac...
- Patent number 6,376,309
- Issue date Apr 23, 2002
- Advanced Micro Devices, Inc.
- John JianShi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Core cell structure and corresponding process for NAND type perform...
- Patent number 6,372,577
- Issue date Apr 16, 2002
- Advanced Micro Devices, Inc.
- Hao Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor with low body effect and low leakage
- Patent number 6,369,433
- Issue date Apr 9, 2002
- Advanced Micro Devices, Inc.
- Narbeh Derhacobian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High yield performance semiconductor process flow for NAND flash me...
- Patent number 6,362,049
- Issue date Mar 26, 2002
- Advanced Micro Devices, Inc.
- Salvatore F. Cagnina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlevel dielectric thickness monitor for complex semiconductor c...
- Patent number 6,350,627
- Issue date Feb 26, 2002
- Advanced Micro Devices, Inc.
- Tho Le La
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor with modified field implant mask
- Patent number 6,351,017
- Issue date Feb 26, 2002
- Advanced Micro Devices, Inc.
- Hao Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation process particularly suited for high volta...
- Patent number 6,346,737
- Issue date Feb 12, 2002
- Advanced Micro Devices, Inc.
- Masaaki Higashitani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method and System for Providing Contact to a First Polysilicon Laye...
- Publication number 20120302017
- Publication date Nov 29, 2012
- SPANSION LLC
- Mark S. CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING CONTACT TO A FIRST POLYSILICON LAYE...
- Publication number 20120217563
- Publication date Aug 30, 2012
- Mark S. CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bitline direction shielding to avoid cross coupling between adjacen...
- Publication number 20050072999
- Publication date Apr 7, 2005
- George Matamis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for reducing processing steps when fabricating a flash memor...
- Publication number 20020031888
- Publication date Mar 14, 2002
- Hao Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for etching tunnel oxide to reduce undercutting d...
- Publication number 20020028583
- Publication date Mar 7, 2002
- Advanced Micro Devices, Inc.
- King Wai Kelwin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for providing a robust alignment mark at thin oxi...
- Publication number 20020011678
- Publication date Jan 31, 2002
- Michael K. Templeton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having reduced field oxide recess and method o...
- Publication number 20010051410
- Publication date Dec 13, 2001
- Masaaki Higashitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for improving the dimensional accuracy of core so...
- Publication number 20010034124
- Publication date Oct 25, 2001
- Michael K. Templeton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for improved control of lines adjacent to a selec...
- Publication number 20010034113
- Publication date Oct 25, 2001
- Michael K. Templeton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for reduced gate aspect ratio to improve gap-fill after spac...
- Publication number 20010016386
- Publication date Aug 23, 2001
- John JianShi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for contact size control for nand technology
- Publication number 20010006847
- Publication date Jul 5, 2001
- Advanced Micro Devices, Inc.
- John JianShi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for monitoring second gate over-etch in a semiconductor device
- Publication number 20010005633
- Publication date Jun 28, 2001
- Advanced Micro Devices, Inc.
- John JianShi Wang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method and system for providing contact to a first polysilicon laye...

Method and system for providing contact to a first polysilicon laye...

Method and system for providing contact to a first polysilicon laye...

Bitline direction shielding to avoid cross coupling between adjacen...

Flash memory device and a method of fabrication thereof

Flash memory having improved core field isolation in select gate re...

NAND type core cell structure for a high density flash memory devic...

Method and system for processing a semiconductor device

Flash memory array and a method and system of fabrication thereof

Method and system for providing a robust alignment mark at thin oxi...

Method and system for providing a polysilicon stringer monitor

Method of manufacturing high voltage transistor with modified field...

Method for improved control of lines adjacent to a select gate usin...

Semiconductor device having reduced field oxide recess and method o...

Method and system for etching tunnel oxide to reduce undercutting d...

Method and system for providing a polysilicon stringer monitor

Type-1 polysilicon electrostatic discharge transistors

Method and system for processing a semiconductor device

Method and system for providing contacts with greater tolerance for...

Re-oxidation approach to improve peripheral gate oxide integrity in...

Nand flash memory with specified gate oxide thickness

Method for reducing the step height of shallow trench isolation str...

Flash memory device with monitor structure for monitoring second ga...

Method for reduced gate aspect ratio to improve gap-fill after spac...

Core cell structure and corresponding process for NAND type perform...

High voltage transistor with low body effect and low leakage

High yield performance semiconductor process flow for NAND flash me...

Interlevel dielectric thickness monitor for complex semiconductor c...

High voltage transistor with modified field implant mask

Shallow trench isolation process particularly suited for high volta...

Patents Applicationslast 30 patents

Method and System for Providing Contact to a First Polysilicon Laye...

METHOD AND SYSTEM FOR PROVIDING CONTACT TO A FIRST POLYSILICON LAYE...

Bitline direction shielding to avoid cross coupling between adjacen...

Method for reducing processing steps when fabricating a flash memor...

Method and system for etching tunnel oxide to reduce undercutting d...

Method and system for providing a robust alignment mark at thin oxi...

Semiconductor device having reduced field oxide recess and method o...

Method and system for improving the dimensional accuracy of core so...

Method and system for improved control of lines adjacent to a selec...

Method for reduced gate aspect ratio to improve gap-fill after spac...

Method for contact size control for nand technology

Method for monitoring second gate over-etch in a semiconductor device