Jerry Cheng

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods and systems for controlling resist residue defects at gate...
- Patent number 6,759,179
- Issue date Jul 6, 2004
- Advanced Micro Devices, Inc.
- Khoi A. Phan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dual damascene interconnect structure
- Patent number 6,756,300
- Issue date Jun 29, 2004
- Advanced Micro Devices, Inc.
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for controlling resist residue defects at gate...
- Patent number 6,649,525
- Issue date Nov 18, 2003
- Advanced Micro Devices, Inc.
- Khoi A. Phan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene arrangement for metal interconnection with low k die...
- Patent number 6,472,317
- Issue date Oct 29, 2002
- Advanced Micro Devices, Inc.
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene arrangement for metal interconnection with oxide die...
- Patent number 6,380,091
- Issue date Apr 30, 2002
- Advanced Micro Devices, Inc.
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene arrangements for metal interconnection with low k di...
- Patent number 6,291,887
- Issue date Sep 18, 2001
- Advanced Micro Devices, Inc.
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene arrangement for metal interconnection with low k die...
- Patent number 6,255,735
- Issue date Jul 3, 2001
- Advanced Micro Devices, Inc.
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming dual damascene arrangement for metal interconnect...
- Patent number 6,235,628
- Issue date May 22, 2001
- Advanced Micro Devices, Inc.
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned dual damascene arrangement for metal interconnection w...
- Patent number 6,207,576
- Issue date Mar 27, 2001
- Advanced Micro Devices, Inc.
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned dual damascene arrangement for metal interconnection w...
- Patent number 6,207,577
- Issue date Mar 27, 2001
- Advanced Micro Devices, Inc.
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned dual damascene arrangement for metal interconnection w...
- Patent number 6,153,514
- Issue date Nov 28, 2000
- Advanced Micro Devices, Inc.
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride etch using N.sub.2 /Ar/CHF.sub.3 chemistry
- Patent number 6,107,208
- Issue date Aug 22, 2000
- Advanced Micro Devices, Inc.
- Jerry Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tantalum barrier metal removal by using CF.sub.4 /o.sub.2 plasma dr...
- Patent number 6,086,777
- Issue date Jul 11, 2000
- Advanced Micro Devices, Inc.
- Jerry Cheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Jerry Cheng

Person

Patents Grantslast 30 patents

Methods and systems for controlling resist residue defects at gate...

Method for forming dual damascene interconnect structure

Methods and systems for controlling resist residue defects at gate...

Dual damascene arrangement for metal interconnection with low k die...

Dual damascene arrangement for metal interconnection with oxide die...

Dual damascene arrangements for metal interconnection with low k di...

Dual damascene arrangement for metal interconnection with low k die...

Method of forming dual damascene arrangement for metal interconnect...

Self-aligned dual damascene arrangement for metal interconnection w...

Self-aligned dual damascene arrangement for metal interconnection w...

Self-aligned dual damascene arrangement for metal interconnection w...

Nitride etch using N.sub.2 /Ar/CHF.sub.3 chemistry

Tantalum barrier metal removal by using CF.sub.4 /o.sub.2 plasma dr...