JIAW-REN SHIH

Person

HSIN-CHU CITY, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Fin field effect transistor (FinFET) device having position-depende...
- Patent number 12,046,638
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated thermoelectric devices in Fin FET technology
- Patent number 11,631,796
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making fin field effect transistor (FinFET) device
- Patent number 11,616,124
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated thermoelectric devices in Fin FET technology
- Patent number 11,424,399
- Issue date Aug 23, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device having position-depende...
- Patent number 11,107,889
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit layout method
- Patent number 10,978,440
- Issue date Apr 13, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shou-En Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Breakdown resistant semiconductor apparatus and method of making same
- Patent number 10,553,494
- Issue date Feb 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit layout, layout method and system for implementing the method
- Patent number 10,403,621
- Issue date Sep 3, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shou-En Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device having position-depende...
- Patent number 10,032,869
- Issue date Jul 24, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for operating the same
- Patent number 9,977,072
- Issue date May 22, 2018
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jiaw-Ren Shih
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device components and methods
- Patent number 9,875,964
- Issue date Jan 23, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Ling Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having gate, first metal-containing material and second...
- Patent number 9,691,894
- Issue date Jun 27, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and method of manufacturing the same
- Patent number 9,373,712
- Issue date Jun 21, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device components and methods
- Patent number 8,648,592
- Issue date Feb 11, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Ling Lin
- G01 - MEASURING TESTING
Information Patent Grant
ESD protection structures on SOI substrates
- Patent number 8,288,822
- Issue date Oct 16, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiaw-Ren Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection structures on SOI substrates
- Patent number 7,994,577
- Issue date Aug 9, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiaw-Ren Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methodology for bias temperature instability test
- Patent number 7,759,962
- Issue date Jul 20, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiaw-Ren Shih
- G01 - MEASURING TESTING
Information Patent Grant
Asymmetrical layout structure for ESD protection
- Patent number 7,518,192
- Issue date Apr 14, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Feng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit system for protecting thin dielectric devices from ESD indu...
- Patent number 7,420,793
- Issue date Sep 2, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Chang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving hot carrier lifetime via a nitrogen implantati...
- Patent number RE40138
- Issue date Mar 4, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mu-Chi Chiang
- 438 - Semiconductor device manufacturing: process
Information Patent Grant
Bipolar-based SCR for electrostatic discharge protection
- Patent number 7,309,905
- Issue date Dec 18, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Feng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoupling capacitor
- Patent number 7,247,543
- Issue date Jul 24, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiaw-Ren Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection structure
- Patent number 6,949,802
- Issue date Sep 27, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jiaw-Ren Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoupling capacitor
- Patent number 6,937,457
- Issue date Aug 30, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiaw-Ren Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended length metal line for improved ESD performance
- Patent number 6,888,248
- Issue date May 3, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shui-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode for power protection
- Patent number 6,762,439
- Issue date Jul 13, 2004
- Taiwan Semiconductor Manufacturing Company
- Shui-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Clamping circuit for stacked NMOS ESD protection
- Patent number 6,747,857
- Issue date Jun 8, 2004
- Taiwan Semiconductor Manufacturing Company
- Jian-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection scheme for outputs with resistor loading
- Patent number 6,740,934
- Issue date May 25, 2004
- Taiwan Semiconductor Manufacturing Company
- Jian-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combination erase waveform to reduce oxide trapping centers generat...
- Patent number 6,614,693
- Issue date Sep 2, 2003
- Taiwan Semiconductor Manufacturing Company
- Jian-Hsing Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Highly latchup-immune CMOS I/O structures
- Patent number 6,614,078
- Issue date Sep 2, 2003
- Taiwan Semiconductor Manufacturing Company
- Jian-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED THERMOELECTRIC DEVICES IN FIN FET TECHNOLOGY
- Publication number 20220376159
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE HAVING POSITION-DEPENDE...
- Publication number 20210376085
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE
- Publication number 20210226012
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING BREAKDOWN RESISTANT SEMICONDUCTOR DEVICE
- Publication number 20200176327
- Publication date Jun 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT LAYOUT METHOD
- Publication number 20190363075
- Publication date Nov 28, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shou-En LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE HAVING POSITION-DEPENDE...
- Publication number 20180350912
- Publication date Dec 6, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BREAKDOWN RESISTANT SEMICONDUCTOR APPARATUS AND METHOD OF MAKING SAME
- Publication number 20180151448
- Publication date May 31, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE HAVING POSITION-DEPENDE...
- Publication number 20180053824
- Publication date Feb 22, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR OPERATING THE SAME
- Publication number 20170153287
- Publication date Jun 1, 2017
- Taiwan Semiconductor Manufacturing company Ltd.
- JIAW-REN SHIH
- G01 - MEASURING TESTING
Information Patent Application
INTEGRATED THERMOELECTRIC DEVICES IN FIN FET TECHNOLOGY
- Publication number 20170012194
- Publication date Jan 12, 2017
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR
- Publication number 20160247913
- Publication date Aug 25, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT LAYOUT, LAYOUT METHOD AND SYSTEM FOR IMPLEMENTING THE METHOD
- Publication number 20160126232
- Publication date May 5, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shou-En LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20160093729
- Publication date Mar 31, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Components and Methods
- Publication number 20140145194
- Publication date May 29, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Ling Lin
- G01 - MEASURING TESTING
Information Patent Application
Semiconductor Device Components and Methods
- Publication number 20130063175
- Publication date Mar 14, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Ling Lin
- G01 - MEASURING TESTING
Information Patent Application
ESD Protection Structures on SOI Substrates
- Publication number 20110254091
- Publication date Oct 20, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiaw-Ren Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methodology for Bias Temperature Instability Test
- Publication number 20100097091
- Publication date Apr 22, 2010
- Jiaw-Ren Shih
- G01 - MEASURING TESTING
Information Patent Application
ESD Protection Structures on SOI Substrates
- Publication number 20100013016
- Publication date Jan 21, 2010
- Jiaw-Ren Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrostatic discharge protection circuit
- Publication number 20080137244
- Publication date Jun 12, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Feng Yo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked contact structure and method of fabricating the same
- Publication number 20070257323
- Publication date Nov 8, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ren-Fen Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Circuit system for protecting thin dielectric devices from ESD indu...
- Publication number 20070159754
- Publication date Jul 12, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Chang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Meander metal line under the pad for improved device MM ESD perform...
- Publication number 20060234399
- Publication date Oct 19, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jiaw-Ren Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar-based SCR for electrostatic discharge protection
- Publication number 20060192251
- Publication date Aug 31, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Feng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetrical layout structure for ESD protection
- Publication number 20060097330
- Publication date May 11, 2006
- Kuo-Feng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge device model (CDM) electrostatic discharge (ESD) failure rat...
- Publication number 20050212097
- Publication date Sep 29, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jiaw-Ren Shih
- G01 - MEASURING TESTING
Information Patent Application
Decoupling capacitor
- Publication number 20050176195
- Publication date Aug 11, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiaw-Ren Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel stacked string for power protection and power connection
- Publication number 20050110095
- Publication date May 26, 2005
- Taiwan Semiconductor Manufacturing Co.
- Jiaw-Ren Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DECOUPLING CAPACITOR
- Publication number 20050088801
- Publication date Apr 28, 2005
- Taiwan Semiconductor Manufacturing Co., LTD
- Jiaw-Ren Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Extended length metal line for improved ESD performance
- Publication number 20040188841
- Publication date Sep 30, 2004
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shui-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD protection scheme for outputs with resistor loading
- Publication number 20030213999
- Publication date Nov 20, 2003
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Jian-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS

JIAW-REN SHIH

Person

Patents Grantslast 30 patents

Fin field effect transistor (FinFET) device having position-depende...

Integrated thermoelectric devices in Fin FET technology

Method of making fin field effect transistor (FinFET) device

Integrated thermoelectric devices in Fin FET technology

Fin field effect transistor (FinFET) device having position-depende...

Circuit layout method

Breakdown resistant semiconductor apparatus and method of making same

Circuit layout, layout method and system for implementing the method

Fin field effect transistor (FinFET) device having position-depende...

Semiconductor structure and method for operating the same

Semiconductor device components and methods

Transistor having gate, first metal-containing material and second...

Transistor and method of manufacturing the same

Semiconductor device components and methods

ESD protection structures on SOI substrates

ESD protection structures on SOI substrates

Methodology for bias temperature instability test

Asymmetrical layout structure for ESD protection

Circuit system for protecting thin dielectric devices from ESD indu...

Method for improving hot carrier lifetime via a nitrogen implantati...

Bipolar-based SCR for electrostatic discharge protection

Decoupling capacitor

ESD protection structure

Decoupling capacitor

Extended length metal line for improved ESD performance

Diode for power protection

Clamping circuit for stacked NMOS ESD protection

ESD protection scheme for outputs with resistor loading

Combination erase waveform to reduce oxide trapping centers generat...

Highly latchup-immune CMOS I/O structures

Patents Applicationslast 30 patents

INTEGRATED THERMOELECTRIC DEVICES IN FIN FET TECHNOLOGY

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE HAVING POSITION-DEPENDE...

METHOD OF MAKING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE

METHOD OF MAKING BREAKDOWN RESISTANT SEMICONDUCTOR DEVICE

CIRCUIT LAYOUT METHOD

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE HAVING POSITION-DEPENDE...

BREAKDOWN RESISTANT SEMICONDUCTOR APPARATUS AND METHOD OF MAKING SAME

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE HAVING POSITION-DEPENDE...

SEMICONDUCTOR STRUCTURE AND METHOD FOR OPERATING THE SAME

INTEGRATED THERMOELECTRIC DEVICES IN FIN FET TECHNOLOGY

TRANSISTOR

CIRCUIT LAYOUT, LAYOUT METHOD AND SYSTEM FOR IMPLEMENTING THE METHOD

TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Semiconductor Device Components and Methods

Semiconductor Device Components and Methods

ESD Protection Structures on SOI Substrates

Methodology for Bias Temperature Instability Test

ESD Protection Structures on SOI Substrates

Electrostatic discharge protection circuit

Stacked contact structure and method of fabricating the same

Circuit system for protecting thin dielectric devices from ESD indu...

Meander metal line under the pad for improved device MM ESD perform...

Bipolar-based SCR for electrostatic discharge protection

Asymmetrical layout structure for ESD protection

Charge device model (CDM) electrostatic discharge (ESD) failure rat...

Decoupling capacitor

Novel stacked string for power protection and power connection

DECOUPLING CAPACITOR

Extended length metal line for improved ESD performance

ESD protection scheme for outputs with resistor loading