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Johann Alsmeier
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Falls, NY, US
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Patents Grants
last 30 patents
Information
Patent Grant
Self-aligned near surface strap for high density trench DRAMS
Patent number
6,759,291
Issue date
Jul 6, 2004
International Business Machines Corporation
Ramachandra Divakaruni
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device with STI sidewall implant
Patent number
6,521,493
Issue date
Feb 18, 2003
International Business Machines Corporation
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Methods to control the threshold voltage of a deep trench corner de...
Patent number
6,518,145
Issue date
Feb 11, 2003
International Business Machines Corporation
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Reducing oxidation stress in the fabrication of devices
Patent number
6,399,977
Issue date
Jun 4, 2002
Siemens Aktiengesellschaft
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Self-aligned near surface strap for high density trench DRAMS
Patent number
6,369,419
Issue date
Apr 9, 2002
International Business Machines Corporation
Ramachandra Divakaruni
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Device with asymmetrical channel dopant profile
Patent number
6,355,954
Issue date
Mar 12, 2002
Siemens Aktiengesellscahft
Martin Gall
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Deep trench cell capacitor with inverting counter electrode
Patent number
6,265,278
Issue date
Jul 24, 2001
International Business Machines Corporation
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High performance DRAM and method of manufacture
Patent number
6,235,574
Issue date
May 22, 2001
Infineon North America Corp.
Dirk Többen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Sensing of memory cell via a plateline
Patent number
6,201,730
Issue date
Mar 13, 2001
Infineon Technologies North America Corp.
Johann Alsmeier
G11 - INFORMATION STORAGE
Information
Patent Grant
Spacers to block deep junction implants and silicide formation in i...
Patent number
6,174,756
Issue date
Jan 16, 2001
Siemens Aktiengesellschaft
Jeffrey P. Gambino
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device with vertical transistor and buried word line
Patent number
6,172,390
Issue date
Jan 9, 2001
Siemens Aktiengesellschaft
Thomas S. Rupp
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Reduced parasitic leakage in semiconductor devices
Patent number
6,163,045
Issue date
Dec 19, 2000
Siemens Aktiengesellschaft
Jack A. Mandelman
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating a random access memory cell
Patent number
6,100,131
Issue date
Aug 8, 2000
Siemens Aktiengesellschaft
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Controllability of a buried device layer
Patent number
6,080,618
Issue date
Jun 27, 2000
Siemens Aktiengesellschaft
Wolfgang Bergner
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for forming deep depletion mode dynamic random access memory...
Patent number
6,054,345
Issue date
Apr 25, 2000
Siemens Aktiengesellschaft
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Device with asymmetrical channel dopant profile
Patent number
6,025,224
Issue date
Feb 15, 2000
Siemens Aktiengesellschaft
Martin Gall
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Unit cell layout and transfer gate design for high density DRAMs
Patent number
6,004,844
Issue date
Dec 21, 1999
Siemens Aktiengesellschaft
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Reduced parasitic leakage in semiconductor devices
Patent number
5,981,332
Issue date
Nov 9, 1999
Siemens Aktiengesellschaft
Jack A. Mandelman
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Unit cell layout and transfer gate design for high density DRAMs ha...
Patent number
5,936,271
Issue date
Aug 10, 1999
Siemens Aktiengesellschaft
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
CMOS integrated circuits with reduced substrate defects
Patent number
5,937,288
Issue date
Aug 10, 1999
Siemens Aktiengesellschaft
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Reducing oxidation stress in the fabrication of devices
Patent number
5,867,420
Issue date
Feb 2, 1999
Siemens Aktiengesellschaft
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Methods for reducing anomalous narrow channel effect in trench-boun...
Patent number
5,858,825
Issue date
Jan 12, 1999
Siemens Aktiengesellschaft
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Deep trench cell capacitor with inverting counter electrode
Patent number
5,793,075
Issue date
Aug 11, 1998
International Business Machines Corporation
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for forming deep trench DRAMs with sub-groundrule gates
Patent number
5,674,769
Issue date
Oct 7, 1997
Siemens Aktiengesellschaft
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Deep trench dram process on SOI for low leakage DRAM cell
Patent number
5,627,092
Issue date
May 6, 1997
Siemens Aktiengesellschaft
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
P-MOSFETS with enhanced anomalous narrow channel effect
Patent number
5,559,050
Issue date
Sep 24, 1996
International Business Machines Corporation
Johann Alsmeier
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Self-aligned near surface strap for high density trench drams
Publication number
20020079528
Publication date
Jun 27, 2002
INTERNATIONAL BUSINESS MACHINES CORPORATION AND INFINEON TECHNOLOGIES NORTH A...
Ramachandra Divakaruni
H01 - BASIC ELECTRIC ELEMENTS