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John Sanchez
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Palo Alto, CA, US
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Patents Grants
last 30 patents
Information
Patent Grant
Two-terminal reversibly switchable memory device
Patent number
11,672,189
Issue date
Jun 6, 2023
Hefei Reliance Memory Limited
Darrell Rinerson
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Grant
Memory element with a reactive metal layer
Patent number
11,502,249
Issue date
Nov 15, 2022
Hefei Reliance Memory Limited
Christophe J. Chevallier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Two-terminal reversibly switchable memory device
Patent number
11,063,214
Issue date
Jul 13, 2021
Hefei Reliance Memory Limited
Darrell Rinerson
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Grant
Memory element with a reactive metal layer
Patent number
10,833,125
Issue date
Nov 10, 2020
Hefei Reliance Memory Limited
Christophe J. Chevallier
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Memory element with a reactive metal layer
Patent number
10,797,106
Issue date
Oct 6, 2020
Hefei Reliance Memory Limited
Christophe J. Chevallier
G11 - INFORMATION STORAGE
Information
Patent Grant
Two-terminal reversibly switchable memory device
Patent number
10,680,171
Issue date
Jun 9, 2020
Hefei Reliance Memory Limited
Darrell Rinerson
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Grant
Memory element with a reactive metal layer
Patent number
10,340,312
Issue date
Jul 2, 2019
Hefei Reliance Memory Limited
Christophe J. Chevallier
G11 - INFORMATION STORAGE
Information
Patent Grant
Two-terminal reversibly switchable memory device
Patent number
10,224,480
Issue date
Mar 5, 2019
Hefei Reliance Memory Limited
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Grant
Two-terminal reversibly switchable memory device
Patent number
9,831,425
Issue date
Nov 28, 2017
Unity Semiconductor Corporation
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Grant
Resistive switching devices having a switching layer and an interme...
Patent number
9,818,939
Issue date
Nov 14, 2017
Adesto Technologies Corporation
John R. Jameson
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Memory element with a reactive metal layer
Patent number
9,806,130
Issue date
Oct 31, 2017
Unity Semiconductor Corporation
Christophe J. Chevallier
G11 - INFORMATION STORAGE
Information
Patent Grant
Determining a thickness of individual layers of a plurality of meta...
Patent number
9,791,257
Issue date
Oct 17, 2017
Amazon Technologies, Inc.
Mohammed Aftab Alam
G01 - MEASURING TESTING
Information
Patent Grant
Memory element with a reactive metal layer
Patent number
9,570,515
Issue date
Feb 14, 2017
Unity Semiconductor Corporation
Christophe J. Chevallier
G11 - INFORMATION STORAGE
Information
Patent Grant
Resistive switching devices having a switching layer and an interme...
Patent number
9,252,359
Issue date
Feb 2, 2016
Adesto Technologies Corporation
John R. Jameson
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Memory element with a reactive metal layer
Patent number
9,159,408
Issue date
Oct 13, 2015
Unity Semiconductor Corporation
Christophe J. Chevallier
G11 - INFORMATION STORAGE
Information
Patent Grant
Two-terminal reversibly switchable memory device
Patent number
9,159,913
Issue date
Oct 13, 2015
Unity Semiconductor Corporation
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Grant
Memory element with a reactive metal layer
Patent number
8,675,389
Issue date
Mar 18, 2014
Unity Semiconductor Corporation
Christophe Chevallier
G11 - INFORMATION STORAGE
Information
Patent Grant
Method for fabricating multi-resistive state memory devices
Patent number
8,611,130
Issue date
Dec 17, 2013
Unity Semiconductor Corporation
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Grant
Method of forming a selective barrier layer using a sacrificial layer
Patent number
6,869,878
Issue date
Mar 22, 2005
Advanced Micro Devices, Inc.
Ercan Adem
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Protection of low-k ILD during damascene processing with thin liner
Patent number
6,836,017
Issue date
Dec 28, 2004
Advanced Micro Devices, Inc.
Minh Van Ngo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Interconnect test structure with slotted feeder lines to prevent st...
Patent number
6,822,437
Issue date
Nov 23, 2004
Advanced Micro Devices, Inc.
Christine Hau-Riege
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Copper interconnect with improved barrier layer
Patent number
6,727,592
Issue date
Apr 27, 2004
Advanced Micro Devices, Inc.
Christy Mei-Chu Woo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Protection low-k ILD during damascene processing with thin liner
Patent number
6,723,635
Issue date
Apr 20, 2004
Advanced Micro Devices, Inc.
Minh Van Ngo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conformal barrier liner in an integrated circuit interconnect
Patent number
6,657,304
Issue date
Dec 2, 2003
Advanced Micro Devices, Inc.
Christy Mei-Chu Woo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
METHOD OF DETERMINING BARRIER LAYER EFFECTIVENESS FOR PREVENTING ME...
Patent number
6,617,176
Issue date
Sep 9, 2003
Advanced Micro Devices, Inc.
John E. Sanchez
G01 - MEASURING TESTING
Information
Patent Grant
Graded low-k middle-etch stop layer for dual-inlaid patterning
Patent number
6,525,428
Issue date
Feb 25, 2003
Advance Micro Devices, Inc.
Minh Van Ngo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing alloy films using cold sputter deposition process
Patent number
5,597,458
Issue date
Jan 28, 1997
Advanced Micro Devices
John E. Sanchez
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Patents Applications
last 30 patents
Information
Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
Publication number
20210193917
Publication date
Jun 24, 2021
Hefei Reliance Memory Limited
Darrell RINERSON
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
Publication number
20210013262
Publication date
Jan 14, 2021
Hefei Reliance Memory Limited
Christophe J. CHEVALLIER
G11 - INFORMATION STORAGE
Information
Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
Publication number
20200259079
Publication date
Aug 13, 2020
Hefei Reliance Memory Limited
Darrell RINERSON
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
Publication number
20190305047
Publication date
Oct 3, 2019
Hefei Reliance Memory Limited
Christophe J. CHEVALLIER
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
Publication number
20190173006
Publication date
Jun 6, 2019
Hefei Reliance Memory Limited
Darrell RINERSON
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
Publication number
20180130946
Publication date
May 10, 2018
UNITY SEMICONDUCTOR CORPORATION
Darrell Rinerson
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
Publication number
20180122857
Publication date
May 3, 2018
UNITY SEMICONDUCTOR CORPORATION
Christophe J. Chevallier
G11 - INFORMATION STORAGE
Information
Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
Publication number
20170179197
Publication date
Jun 22, 2017
UNITY SEMICONDUCTOR CORPORATION
Christophe J. Chevallier
G11 - INFORMATION STORAGE
Information
Patent Application
Resistive Switching Devices Having a Switching Layer and an Interme...
Publication number
20160118585
Publication date
Apr 28, 2016
ADESTO TECHNOLOGIES CORPORATION
John R. Jameson
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
Publication number
20160005793
Publication date
Jan 7, 2016
UNITY SEMICONDUCTOR CORPORATION
Christophe J. Chevallier
G11 - INFORMATION STORAGE
Information
Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
Publication number
20150380642
Publication date
Dec 31, 2015
UNITY SEMICONDUCTOR CORPORATION
Darrell Rinerson
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
Publication number
20150029780
Publication date
Jan 29, 2015
UNITY SEMICONDUCTOR CORPORATION
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Application
PROGRAMMABLE IMPEDANCE MEMORY ELEMENTS AND CORRESPONDING METHODS
Publication number
20140293676
Publication date
Oct 2, 2014
Wei Ti Lee
G11 - INFORMATION STORAGE
Information
Patent Application
Resistive Switching Devices Having a Switching Layer And An Interme...
Publication number
20140246641
Publication date
Sep 4, 2014
ADESTO TECHNOLOGIES CORPORATION
John R. Jameson
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Memory Element With a Reactive Metal Layer
Publication number
20140211542
Publication date
Jul 31, 2014
UNITY SEMICONDUCTOR CORPORATION
Christophe J. Chevallier
G11 - INFORMATION STORAGE
Information
Patent Application
Method For Fabricating Multi Resistive State Memory Devices
Publication number
20120064691
Publication date
Mar 15, 2012
UNITY SEMICONDUCTOR CORPORATION
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Application
Memory Element With A Reactive Metal Layer
Publication number
20120033481
Publication date
Feb 9, 2012
UNITY SEMICONDUCTOR CORPORATION
DARRELL RINERSON
G11 - INFORMATION STORAGE
Information
Patent Application
Multi-resistive state memory device with conductive oxide electrodes
Publication number
20110186803
Publication date
Aug 4, 2011
UNITY SEMICONDUCTOR CORPORATION
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Application
Multi-resistive state memory device with conductive oxide electrodes
Publication number
20100157657
Publication date
Jun 24, 2010
UNITY SEMICONDUCTOR CORPORATION
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Application
Multi-resistive state memory device with conductive oxide electrodes
Publication number
20090045390
Publication date
Feb 19, 2009
UNITY SEMICONDUCTOR CORPORATION
Darrel Rinerson
G11 - INFORMATION STORAGE
Information
Patent Application
Method for fabricating multi-resistive state memory devices
Publication number
20080293196
Publication date
Nov 27, 2008
UNITY SEMICONDUCTOR CORPORATION
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Application
Multi-resistive state element with reactive metal
Publication number
20060245243
Publication date
Nov 2, 2006
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Application
Memory using mixed valence conductive oxides
Publication number
20060171200
Publication date
Aug 3, 2006
UNITY SEMICONDUCTOR CORPORATION
Darrell Rinerson
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Application
Movable terminal in a two terminal memory array
Publication number
20060158998
Publication date
Jul 20, 2006
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Application
MEMORY ELEMENT HAVING ISLANDS
Publication number
20050243595
Publication date
Nov 3, 2005
UNITY SEMICONDUCTOR CORPORATION
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Application
Multi-resistive state element with reactive metal
Publication number
20050174835
Publication date
Aug 11, 2005
UNITY SEMICONDUCTOR CORPORATION
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Application
Resistive memory device with a treated interface
Publication number
20040159828
Publication date
Aug 19, 2004
Unity Semiconductor, Inc.
Darrell Rinerson
G11 - INFORMATION STORAGE
Information
Patent Application
Protection of low-k ILD during damascene processing with thin liner
Publication number
20040147117
Publication date
Jul 29, 2004
Advanced Micro Devices, Inc.
Minh Van Ngo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for improving electromigration performance of metallization...
Publication number
20030217462
Publication date
Nov 27, 2003
Fei Wang
H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR