Judy X. An

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Double and triple gate MOSFET devices and methods for making same
- Patent number 8,580,660
- Issue date Nov 12, 2013
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium MOSFET devices and methods for making same
- Patent number 8,334,181
- Issue date Dec 18, 2012
- Advanced Micro Devices, Inc.
- Judy Xilin An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double and triple gate MOSFET devices and methods for making same
- Patent number 8,222,680
- Issue date Jul 17, 2012
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for quality assured semiconductor device modeling
- Patent number 7,844,927
- Issue date Nov 30, 2010
- GLOBALFOUNDRIES Inc.
- Zhi-Yuan Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Germanium MOSFET devices and methods for making same
- Patent number 7,781,810
- Issue date Aug 24, 2010
- Advanced Micro Devices, Inc.
- Judy Xilin An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with multiple fin structures
- Patent number 7,679,134
- Issue date Mar 16, 2010
- GlobalFoundries
- Matthew S. Buynoski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit tester information processing system for nonline...
- Patent number 7,630,850
- Issue date Dec 8, 2009
- Advanced Micro Devices, Inc.
- Rasit Onur Topaloglu
- G01 - MEASURING TESTING
Information Patent Grant
Integrated circuit tester information processing system
- Patent number 7,610,160
- Issue date Oct 27, 2009
- GLOBALFOUNDRIES Inc.
- Sushant S. Suryagandh
- G01 - MEASURING TESTING
Information Patent Grant
FinFET device with multiple channels
- Patent number 7,432,557
- Issue date Oct 7, 2008
- Advanced Micro Devices, Inc.
- Matthew S. Buynoski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of semiconductor devices to achieve <100> channel orienta...
- Patent number 7,432,558
- Issue date Oct 7, 2008
- Advanced Micro Devices, Inc.
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tri-gate and gate around MOSFET devices and methods for making same
- Patent number 7,259,425
- Issue date Aug 21, 2007
- Advanced Micro Devices, Inc.
- Judy Xilin An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a fin structure
- Patent number 7,179,692
- Issue date Feb 20, 2007
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium MOSFET devices and methods for making same
- Patent number 7,148,526
- Issue date Dec 12, 2006
- Advanced Micro Devices, Inc.
- Judy Xilin An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate structure surrounding a fin
- Patent number 6,960,804
- Issue date Nov 1, 2005
- Hussman Corporation
- Chih-Yuh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow fin FinFET
- Patent number 6,921,963
- Issue date Jul 26, 2005
- Advanced Micro Devices, Inc.
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a thin fin and raised source/drain areas
- Patent number 6,911,697
- Issue date Jun 28, 2005
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel FinFET
- Patent number 6,897,527
- Issue date May 24, 2005
- Advanced Micro Devices, Inc.
- Srikanteswara Dakshina-Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming multiple fins in a semiconductor device
- Patent number 6,872,647
- Issue date Mar 29, 2005
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming tri-gate FinFET with mesa isolation
- Patent number 6,855,583
- Issue date Feb 15, 2005
- Advanced Micro Devices, Inc.
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-gate semiconductor device
- Patent number 6,853,020
- Issue date Feb 8, 2005
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two transistor NOR device
- Patent number 6,842,048
- Issue date Jan 11, 2005
- Advanced Micro Devices, Inc.
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a U-shaped gate structure
- Patent number 6,833,588
- Issue date Dec 21, 2004
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a gate in a FinFET device
- Patent number 6,815,268
- Issue date Nov 9, 2004
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel finfet
- Patent number 6,803,631
- Issue date Oct 12, 2004
- Advanced Micro Devices, Inc.
- Srikanteswara Dakshina-Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical double gate or all-around gate MOSFET devices and meth...
- Patent number 6,800,885
- Issue date Oct 5, 2004
- Advance Micro Devices, Inc.
- Judy Xilin An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET-based SRAM cell
- Patent number 6,765,303
- Issue date Jul 20, 2004
- Advanced Micro Devices, Inc.
- Zoran Krivokapic
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active l...
- Patent number 6,765,227
- Issue date Jul 20, 2004
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow fin FinFET
- Patent number 6,762,483
- Issue date Jul 13, 2004
- Advanced Micro Devices, Inc.
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniformly doped source/drain junction in a double-gate MOSFET
- Patent number 6,716,690
- Issue date Apr 6, 2004
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leaky, thermally conductive insulator material (LTCIM) in semicondu...
- Patent number 6,717,212
- Issue date Apr 6, 2004
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DOUBLE AND TRIPLE GATE MOSFET DEVICES AND METHODS FOR MAKING SAME
- Publication number 20120252193
- Publication date Oct 4, 2012
- Advanced Micro Devices, Inc.
- Ming-Ren LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT TESTER INFORMATION PROCESSING SYSTEM FOR NONLINE...
- Publication number 20090099829
- Publication date Apr 16, 2009
- Advanced Micro Devices, Inc.
- Rasit Onur Topaloglu
- G01 - MEASURING TESTING
Information Patent Application
INTEGRATED CIRCUIT TESTER INFORMATION PROCESSING SYSTEM
- Publication number 20090076750
- Publication date Mar 19, 2009
- Advanced Micro Devices, Inc.
- Sushant S. Suryagandh
- G01 - MEASURING TESTING
Information Patent Application
Method for quality assured semiconductor device modeling
- Publication number 20080177523
- Publication date Jul 24, 2008
- Advanced Micro Devices, Inc.
- Zhi-Yuan Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method of manufacturing a semiconductor device having a U-shaped ga...
- Publication number 20050006666
- Publication date Jan 13, 2005
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Narrow fin finfet
- Publication number 20040197975
- Publication date Oct 7, 2004
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained channel FinFET
- Publication number 20040195627
- Publication date Oct 7, 2004
- Srikanteswara Dakshina-Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED CHANNEL FINFET
- Publication number 20040145019
- Publication date Jul 29, 2004
- Srikanteswara Dakshina-Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tri-gate and gate around MOSFET devices and methods for making same
- Publication number 20040145000
- Publication date Jul 29, 2004
- Judy Xilin An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two transistor nor device
- Publication number 20040100306
- Publication date May 27, 2004
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double and triple gate MOSFET devices and methods for making same
- Publication number 20040075122
- Publication date Apr 22, 2004
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a U-shaped gate structure
- Publication number 20040075121
- Publication date Apr 22, 2004
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Leaky, thermally conductive insulator material (LTCIM) in semicondu...
- Publication number 20020185685
- Publication date Dec 12, 2002
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Double and triple gate MOSFET devices and methods for making same

Germanium MOSFET devices and methods for making same

Double and triple gate MOSFET devices and methods for making same

Method for quality assured semiconductor device modeling

Germanium MOSFET devices and methods for making same

FinFET device with multiple fin structures

Integrated circuit tester information processing system for nonline...

Integrated circuit tester information processing system

FinFET device with multiple channels

Formation of semiconductor devices to achieve <100> channel orienta...

Tri-gate and gate around MOSFET devices and methods for making same

Method of manufacturing a semiconductor device having a fin structure

Germanium MOSFET devices and methods for making same

Semiconductor device having a gate structure surrounding a fin

Narrow fin FinFET

Semiconductor device having a thin fin and raised source/drain areas

Strained channel FinFET

Method for forming multiple fins in a semiconductor device

Method for forming tri-gate FinFET with mesa isolation

Double-gate semiconductor device

Two transistor NOR device

Semiconductor device having a U-shaped gate structure

Method for forming a gate in a FinFET device

Strained channel finfet

Asymmetrical double gate or all-around gate MOSFET devices and meth...

FinFET-based SRAM cell

Semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active l...

Narrow fin FinFET

Uniformly doped source/drain junction in a double-gate MOSFET

Leaky, thermally conductive insulator material (LTCIM) in semicondu...

Patents Applicationslast 30 patents

DOUBLE AND TRIPLE GATE MOSFET DEVICES AND METHODS FOR MAKING SAME

INTEGRATED CIRCUIT TESTER INFORMATION PROCESSING SYSTEM FOR NONLINE...

INTEGRATED CIRCUIT TESTER INFORMATION PROCESSING SYSTEM

Method for quality assured semiconductor device modeling

Method of manufacturing a semiconductor device having a U-shaped ga...

Narrow fin finfet

Strained channel FinFET

STRAINED CHANNEL FINFET

Tri-gate and gate around MOSFET devices and methods for making same

Two transistor nor device

Double and triple gate MOSFET devices and methods for making same

Semiconductor device having a U-shaped gate structure

Leaky, thermally conductive insulator material (LTCIM) in semicondu...