Julien Frougier

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked field-effect transistors
- Patent number 12,183,740
- Issue date Dec 31, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked FET with independent gate control
- Patent number 12,176,345
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside CMOS trench epi with close N2P space
- Patent number 12,154,945
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming nanosheet transistor using sacrificial spacer and inner spa...
- Patent number 12,154,971
- Issue date Nov 26, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Moon-shaped bottom spacer for vertical transport field effect trans...
- Patent number 12,154,985
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random-access memory cell
- Patent number 12,150,310
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked device with buried interconnect
- Patent number 12,142,526
- Issue date Nov 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having two-dimensional channel
- Patent number 12,136,656
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside electrical contacts to buried power rails
- Patent number 12,136,655
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge diode having dielectric isolation layer
- Patent number 12,119,341
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact MRAM architecture with magnetic bottom electrode
- Patent number 12,112,782
- Issue date Oct 8, 2024
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanosheet transistors with self-aligned gate cut
- Patent number 12,107,014
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate thinning for a backside power distribution network
- Patent number 12,106,969
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistor with bottom dielectric isol...
- Patent number 12,100,746
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistors having end portions of nan...
- Patent number 12,094,972
- Issue date Sep 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with backside gate contacts
- Patent number 12,087,691
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary field effect transistor devices
- Patent number 12,087,770
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual inner spacer epitaxy in monolithic stacked FETs
- Patent number 12,080,709
- Issue date Sep 3, 2024
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with power rail disposed under active gate
- Patent number 12,046,643
- Issue date Jul 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Authenticity and yield by reading defective cells
- Patent number 12,027,224
- Issue date Jul 2, 2024
- International Business Machines Corporation
- Julien Frougier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated nanosheet field effect transistors and floating gate mem...
- Patent number 12,009,435
- Issue date Jun 11, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual dielectric pillar fork sheet device
- Patent number 12,002,808
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet-based semiconductor structure with dielectric pillar
- Patent number 12,002,850
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM...
- Patent number 11,961,544
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM memory array yield improvement
- Patent number 11,963,456
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Dimitri Houssameddine
- G11 - INFORMATION STORAGE
Information Patent Grant
Thick gate oxide device option for nanosheet device
- Patent number 11,955,526
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized contact resistance for stacked FET devices
- Patent number 11,948,944
- Issue date Apr 2, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field effect transistor with a source drain epitaxy repla...
- Patent number 11,942,374
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around-contact for 2D-channel gate-all-around field-effect-tra...
- Patent number 11,935,930
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT
- Publication number 20250040240
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET SRAM WITH TAPERED REGION
- Publication number 20250040115
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL PATTERNING AND MIDDLE-OF-LINE SELF-ALIGNED CONT...
- Publication number 20250031414
- Publication date Jan 23, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION
- Publication number 20250022880
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM FORMATION FOR VERTICAL FET TRANSISTOR WITH BACKSIDE CONTACT
- Publication number 20250008719
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS WITH DIELECTRIC INSULATOR LAYERS
- Publication number 20250006730
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL NANOSHEET FET FORMATION WITH INCREASED CURRENT
- Publication number 20250006820
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION
- Publication number 20250006788
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT OF SELF-ALIGNED CONTACT POST REPLACEMENT METAL GATE
- Publication number 20240429096
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TRANSISTOR HAVING AN OVER-THE-CHANNEL ETCH-STOP ISOLATIO...
- Publication number 20240429280
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)
- Publication number 20240421064
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED...
- Publication number 20240421035
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Nicolas Jean Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED BACKSIDE CONTACT
- Publication number 20240413214
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL
- Publication number 20240415032
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Kangguo Cheng
Information Patent Application
STACKED TWO-TRANSISTOR DYNAMIC RANDOM ACCESS MEMORY CELL
- Publication number 20240405071
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SIGNAL WIRING AND FRONTSIDE...
- Publication number 20240404950
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED HYBRID TFET AND MOSFET
- Publication number 20240395814
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED 2T DRAM
- Publication number 20240386943
- Publication date Nov 21, 2024
- International Business Machines Corporation
- Min Gyu Sung
- G11 - INFORMATION STORAGE
Information Patent Application
TREATMENT OF SIDEWALL OF TUNNEL BARRIER JUNCTION
- Publication number 20240365673
- Publication date Oct 31, 2024
- International Business Machines Corporation
- Michael Rizzolo
- G11 - INFORMATION STORAGE
Information Patent Application
NANOWIRE FLASH MEMORY WITH SEPARATED SOURCE/DRAIN REGIONS
- Publication number 20240357822
- Publication date Oct 24, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG
- Publication number 20240347533
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA
- Publication number 20240347423
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH INNER SPACERS AND MET...
- Publication number 20240339538
- Publication date Oct 10, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH LATE FIN CUT
- Publication number 20240339523
- Publication date Oct 10, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SOURCE/DRAIN CONTACT IN A TIGHT TIP-TO-TIP SPACE
- Publication number 20240339509
- Publication date Oct 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES
- Publication number 20240332082
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET DEVICE WITH ACCURATE GATE EXTENSION FOR REDUCED PARASITIC...
- Publication number 20240332296
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF LINE CONTACT FOR ADVANCED NODES
- Publication number 20240321982
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL
- Publication number 20240324476
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT CUT AND WRAP AROUND CONTACT
- Publication number 20240321645
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS

Julien Frougier

Person

Patents Grantslast 30 patents

Field effect transistors comprising a matrix of gate-all-around cha...

Stacked field-effect transistors

Stacked FET with independent gate control

Backside CMOS trench epi with close N2P space

Forming nanosheet transistor using sacrificial spacer and inner spa...

Moon-shaped bottom spacer for vertical transport field effect trans...

Ferroelectric random-access memory cell

Stacked device with buried interconnect

Semiconductor structure having two-dimensional channel

Backside electrical contacts to buried power rails

Electrostatic discharge diode having dielectric isolation layer

Compact MRAM architecture with magnetic bottom electrode

Nanosheet transistors with self-aligned gate cut

Substrate thinning for a backside power distribution network

Gate-all-around field effect transistor with bottom dielectric isol...

Gate-all-around field effect transistors having end portions of nan...

Semiconductor structures with backside gate contacts

Complementary field effect transistor devices

Dual inner spacer epitaxy in monolithic stacked FETs

Semiconductor structures with power rail disposed under active gate

Authenticity and yield by reading defective cells

Integrated nanosheet field effect transistors and floating gate mem...

Dual dielectric pillar fork sheet device

Nanosheet-based semiconductor structure with dielectric pillar

Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM...

MRAM memory array yield improvement

Thick gate oxide device option for nanosheet device

Optimized contact resistance for stacked FET devices

Nanosheet field effect transistor with a source drain epitaxy repla...

Wrap-around-contact for 2D-channel gate-all-around field-effect-tra...

Patents Applicationslast 30 patents

STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT

NANOSHEET SRAM WITH TAPERED REGION

WORK FUNCTION METAL PATTERNING AND MIDDLE-OF-LINE SELF-ALIGNED CONT...

GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION

SRAM FORMATION FOR VERTICAL FET TRANSISTOR WITH BACKSIDE CONTACT

STACKED TRANSISTORS WITH DIELECTRIC INSULATOR LAYERS

TUNNEL NANOSHEET FET FORMATION WITH INCREASED CURRENT

NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION

GATE CUT OF SELF-ALIGNED CONTACT POST REPLACEMENT METAL GATE

INTEGRATED TRANSISTOR HAVING AN OVER-THE-CHANNEL ETCH-STOP ISOLATIO...

METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)

TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED...

SELF ALIGNED BACKSIDE CONTACT

PHASE CHANGE MEMORY CELL

STACKED TWO-TRANSISTOR DYNAMIC RANDOM ACCESS MEMORY CELL

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SIGNAL WIRING AND FRONTSIDE...

STACKED HYBRID TFET AND MOSFET

SCALED 2T DRAM

TREATMENT OF SIDEWALL OF TUNNEL BARRIER JUNCTION

NANOWIRE FLASH MEMORY WITH SEPARATED SOURCE/DRAIN REGIONS

SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG

METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH INNER SPACERS AND MET...

VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH LATE FIN CUT

FORMING SOURCE/DRAIN CONTACT IN A TIGHT TIP-TO-TIP SPACE

STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES

FORKSHEET DEVICE WITH ACCURATE GATE EXTENSION FOR REDUCED PARASITIC...

MIDDLE OF LINE CONTACT FOR ADVANCED NODES

STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL

CONTACT CUT AND WRAP AROUND CONTACT