KAZUNORI OHUCHI

Person

TOKYO, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor integrated circuit
- Patent number 6,677,797
- Issue date Jan 13, 2004
- Kabushiki Kaisha Toshiba
- Atsushi Kameyama
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 6,545,909
- Issue date Apr 8, 2003
- Kabushiki Kaisha Toshiba
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Level converter circuit
- Patent number 6,466,054
- Issue date Oct 15, 2002
- Kabushiki Kaisha Toshiba
- Atsushi Kameyama
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 6,363,010
- Issue date Mar 26, 2002
- Kabushiki Kaisha Toshiba
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Configurable integrated circuit and method of testing the same
- Patent number 6,349,395
- Issue date Feb 19, 2002
- Kabushiki Kaisha Toshiba
- Kazunori Ohuchi
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor integrated circuit for cryptographic process and encr...
- Patent number 6,327,654
- Issue date Dec 4, 2001
- Kabushiki Kaisha Toshiba
- Yukihito Oowaki
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 6,282,117
- Issue date Aug 28, 2001
- Kabushiki Kaisha Toshiba
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having a plurality of transfer gates an...
- Patent number 6,198,687
- Issue date Mar 6, 2001
- Kabushiki Kaisha Toshiba
- Koji Sakui
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically erasable programmable read-only memory with threshold...
- Patent number 6,081,454
- Issue date Jun 27, 2000
- Kabushiki Kaisha Toshiba
- Kazunori Ohuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 6,044,013
- Issue date Mar 28, 2000
- Kabushiki Kaisha Toshiba
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 5,969,985
- Issue date Oct 19, 1999
- Kabushiki Kaisha Toshiba
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Error correction/detection circuit and semiconductor memory device...
- Patent number 5,933,436
- Issue date Aug 3, 1999
- Kabushiki Kaisha Toshiba
- Toru Tanzawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory device having a multilayered bitline structure...
- Patent number 5,933,380
- Issue date Aug 3, 1999
- Kabushiki Kaisha Toshiba
- Kenji Tsuchida
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically erasable programmable read-only memory with threshold...
- Patent number 5,831,903
- Issue date Nov 3, 1998
- Kabushiki Kaisha Toshiba
- Kazunori Ohuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically erasable programmable read-only memory with NAND cell...
- Patent number RE35838
- Issue date Jul 7, 1998
- Kabushiki Kaisha Toshiba
- Masaki Momodomi
- 365 - Static information storage and retrieval
Information Patent Grant
Sense amplifier for use in an EEPROM
- Patent number 5,740,112
- Issue date Apr 14, 1998
- Kabushiki Kaisha Toshiba
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically erasable programmable read-only memory with threshold...
- Patent number 5,657,270
- Issue date Aug 12, 1997
- Kabushiki Kaisha Toshiba
- Kazunori Ohuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically erasable and programmable non-volatile and multi-level...
- Patent number 5,602,789
- Issue date Feb 11, 1997
- Kabushiki Kaisha Toshiba
- Tetsuo Endoh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory device including circuitry for activating and...
- Patent number 5,596,543
- Issue date Jan 21, 1997
- Kabushiki Kaisha Toshiba
- Koji Sakui
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic semiconductor memory device
- Patent number 5,555,203
- Issue date Sep 10, 1996
- Kabushiki Kaisha Toshiba
- Shinichiro Shiratake
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 5,523,980
- Issue date Jun 4, 1996
- Kabushiki Kaisha Toshiba
- Koji Sakui
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory device for storing multi-value data
- Patent number 5,521,865
- Issue date May 28, 1996
- Kabushiki Kaisha Toshiba
- Kazunori Ohuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory with NAND cell structure and swit...
- Patent number 5,508,957
- Issue date Apr 16, 1996
- Kabushiki Kaisha Toshiba
- Masaki Momodomi
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory apparatus
- Patent number 5,477,495
- Issue date Dec 19, 1995
- Kabushiki Kaisha Toshiba
- Yoshiyuki Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically erasable and programmable non-volatile memory system w...
- Patent number 5,469,444
- Issue date Nov 21, 1995
- Kabushiki Kaisha Toshiba
- Tetsuo Endoh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Electrically erasable and programmable non-volatile memory system w...
- Patent number 5,386,422
- Issue date Jan 31, 1995
- Kabushiki Kaisha Toshiba
- Tetsuo Endoh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Electrically erasable programmable read-only memory with write/veri...
- Patent number 5,379,256
- Issue date Jan 3, 1995
- Kabushiki Kaisha Toshiba
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically erasable and programmable non-volatile memory system w...
- Patent number 5,321,699
- Issue date Jun 14, 1994
- Kabushiki Kaisha Toshiba
- Tetsuo Endoh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory including address multiplexing circuitry for c...
- Patent number 5,173,878
- Issue date Dec 22, 1992
- Kabushiki Kaisha Toshiba
- Koji Sakui
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically erasable programmable read-only memory with NAND cell...
- Patent number 4,959,812
- Issue date Sep 25, 1990
- Kabushiki Kaisha Toshiba
- Masaki Momodomi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Nonvolatile semiconductor memory device
- Publication number 20020097603
- Publication date Jul 25, 2002
- Kabushiki Kaisha Toshiba
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor integrated circuit
- Publication number 20020080663
- Publication date Jun 27, 2002
- Atsushi Kameyama
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
CONFIGURABLE INTEGRATED CIRCUIT AND METHOD OF TESTING THE SAME
- Publication number 20020010885
- Publication date Jan 24, 2002
- KAZUNORI OHUCHI
- G01 - MEASURING TESTING
Information Patent Application
Nonvolatile semiconductor memory device
- Publication number 20010040821
- Publication date Nov 15, 2001
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Application
Level converter circuit
- Publication number 20010024130
- Publication date Sep 27, 2001
- Kabushiki Kaisha Toshiba
- Atsushi Kameyama
- H03 - BASIC ELECTRONIC CIRCUITRY

KAZUNORI OHUCHI

Person

Patents Grantslast 30 patents

Semiconductor integrated circuit

Nonvolatile semiconductor memory device

Level converter circuit

Nonvolatile semiconductor memory device

Configurable integrated circuit and method of testing the same

Semiconductor integrated circuit for cryptographic process and encr...

Nonvolatile semiconductor memory device

Semiconductor memory device having a plurality of transfer gates an...

Electrically erasable programmable read-only memory with threshold...

Nonvolatile semiconductor memory device

Nonvolatile semiconductor memory device

Error correction/detection circuit and semiconductor memory device...

Semiconductor memory device having a multilayered bitline structure...

Electrically erasable programmable read-only memory with threshold...

Electrically erasable programmable read-only memory with NAND cell...

Sense amplifier for use in an EEPROM

Electrically erasable programmable read-only memory with threshold...

Electrically erasable and programmable non-volatile and multi-level...

Semiconductor memory device including circuitry for activating and...

Dynamic semiconductor memory device

Semiconductor memory device

Non-volatile semiconductor memory device for storing multi-value data

Non-volatile semiconductor memory with NAND cell structure and swit...

Nonvolatile semiconductor memory apparatus

Electrically erasable and programmable non-volatile memory system w...

Electrically erasable and programmable non-volatile memory system w...

Electrically erasable programmable read-only memory with write/veri...

Electrically erasable and programmable non-volatile memory system w...

Semiconductor memory including address multiplexing circuitry for c...

Electrically erasable programmable read-only memory with NAND cell...

Patents Applicationslast 30 patents

Nonvolatile semiconductor memory device

Semiconductor integrated circuit

CONFIGURABLE INTEGRATED CIRCUIT AND METHOD OF TESTING THE SAME

Nonvolatile semiconductor memory device

Level converter circuit