Mayank T. Bulsara

Person

Cambridge, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Strained channel dynamic random access memory devices
- Patent number 9,508,724
- Issue date Nov 29, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel dynamic random access memory devices
- Patent number 9,153,591
- Issue date Oct 6, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel dynamic random access memory devices
- Patent number 8,890,226
- Issue date Nov 18, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming strained channel dynamic random access memory d...
- Patent number 8,441,055
- Issue date May 14, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel dynamic random access memory devices
- Patent number 8,253,181
- Issue date Aug 28, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of dislocation pile-up formation during relaxed lattice-m...
- Patent number 7,594,967
- Issue date Sep 29, 2009
- AmberWave Systems Corporation
- Christopher J. Vineis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for selective placement of dislocation arrays
- Patent number 7,494,881
- Issue date Feb 24, 2009
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming dynamic random access memory trench capacitors
- Patent number 7,410,861
- Issue date Aug 12, 2008
- AmberWave Systems Corporation
- Mayank Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory trench capacitors
- Patent number 7,408,214
- Issue date Aug 5, 2008
- AmberWave Systems Corporation
- Mayank Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming multiple gate insulators on a strained semiconduc...
- Patent number 7,172,935
- Issue date Feb 6, 2007
- AmberWave Systems Corporation
- Anthony Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory trench capacitors
- Patent number 6,891,209
- Issue date May 10, 2005
- AmberWave Systems Corporation
- Mayank Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming multiple gate insulators on a strained semiconduc...
- Patent number 6,849,508
- Issue date Feb 1, 2005
- AmberWave Systems Corporation
- Anthony Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed InxGa1-xAs layers integrated with Si
- Patent number 6,594,293
- Issue date Jul 15, 2003
- AmberWave Systems Corporation
- Mayank Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed InxGa1-xAs layers integrated with Si
- Patent number 6,589,335
- Issue date Jul 8, 2003
- AmberWave Systems Corporation
- Mayank Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed InxGa1−xAs buffers
- Patent number 6,495,868
- Issue date Dec 17, 2002
- Massachusetts Institute of Technology
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed InxGa(1-x)as buffers
- Patent number 6,232,138
- Issue date May 15, 2001
- Massachusetts Institute of Technology
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Strained Channel Dynamic Random Access Memory Devices
- Publication number 20150380414
- Publication date Dec 31, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Channel Dynamic Random Access Memory Devices
- Publication number 20150060972
- Publication date Mar 5, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Channel Dynamic Random Access Memory Devices
- Publication number 20130241035
- Publication date Sep 19, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Strained Channel Dynamic Random Access Memory D...
- Publication number 20120302032
- Publication date Nov 29, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mayank Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained channel dynamic random access memory devices
- Publication number 20080265299
- Publication date Oct 30, 2008
- Mayank Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Selective Placement of Dislocation Arrays
- Publication number 20080070397
- Publication date Mar 20, 2008
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of forming multiple gate insulators on a strained semiconduc...
- Publication number 20050098774
- Publication date May 12, 2005
- AmberWave Systems Corporation
- Anthony Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming dynamic random access memory trench capacitors
- Publication number 20050067647
- Publication date Mar 31, 2005
- AmberWave Systems Corporation
- Mayank Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dynamic random access memory trench capacitors
- Publication number 20050035389
- Publication date Feb 17, 2005
- AmberWave Systems Corporation
- Mayank Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective placement of dislocation arrays
- Publication number 20040115916
- Publication date Jun 17, 2004
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- C30 - CRYSTAL GROWTH
Information Patent Application
Reduction of dislocation pile-up formation during relaxed lattice-m...
- Publication number 20040040493
- Publication date Mar 4, 2004
- AmberWave Systems Corporation
- Christopher J. Vineis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dynamic random access memory trench capacitors
- Publication number 20030030091
- Publication date Feb 13, 2003
- AmberWave Systems Corporation
- Mayank Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming multiple gate insulators on a strained semiconduc...
- Publication number 20030013287
- Publication date Jan 16, 2003
- Anthony Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Relaxed InxGa1-xAs layers integrated with Si
- Publication number 20020129762
- Publication date Sep 19, 2002
- Mayank Bulsara
- C30 - CRYSTAL GROWTH
Information Patent Application
Strained-silicon diffused metal oxide semiconductor field effect tr...
- Publication number 20020030227
- Publication date Mar 14, 2002
- Mayank T. Bulsara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Relaxed InGaAs buffers
- Publication number 20010040244
- Publication date Nov 15, 2001
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS

Mayank T. Bulsara

Person

Patents Grantslast 30 patents

Strained channel dynamic random access memory devices

Strained channel dynamic random access memory devices

Strained channel dynamic random access memory devices

Methods for forming strained channel dynamic random access memory d...

Strained channel dynamic random access memory devices

Reduction of dislocation pile-up formation during relaxed lattice-m...

Methods for selective placement of dislocation arrays

Methods of forming dynamic random access memory trench capacitors

Dynamic random access memory trench capacitors

Method of forming multiple gate insulators on a strained semiconduc...

Dynamic random access memory trench capacitors

Method of forming multiple gate insulators on a strained semiconduc...

Relaxed InxGa1-xAs layers integrated with Si

Relaxed InxGa1-xAs layers integrated with Si

Relaxed InxGa1&#x02212;xAs buffers

Relaxed InxGa(1-x)as buffers

Patents Applicationslast 30 patents

Strained Channel Dynamic Random Access Memory Devices

Strained Channel Dynamic Random Access Memory Devices

Strained Channel Dynamic Random Access Memory Devices

Methods for Forming Strained Channel Dynamic Random Access Memory D...

Strained channel dynamic random access memory devices

Methods for Selective Placement of Dislocation Arrays

Method of forming multiple gate insulators on a strained semiconduc...

Methods of forming dynamic random access memory trench capacitors

Dynamic random access memory trench capacitors

Selective placement of dislocation arrays

Reduction of dislocation pile-up formation during relaxed lattice-m...

Dynamic random access memory trench capacitors

Method of forming multiple gate insulators on a strained semiconduc...

Relaxed InxGa1-xAs layers integrated with Si

Strained-silicon diffused metal oxide semiconductor field effect tr...

Relaxed InGaAs buffers

Relaxed InxGa1−xAs buffers