Minjoo Lee

Person

New Haven, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Structure and method for a high-speed semiconductor device having a...
- Patent number 8,436,336
- Issue date May 7, 2013
- Massachusetts Institute of Technology
- Minjoo L. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor devices
- Patent number 8,384,156
- Issue date Feb 26, 2013
- Yale University
- Tso-Ping Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strained GE for electronic and optoelectronic applications
- Patent number 8,063,413
- Issue date Nov 22, 2011
- Massachusetts Institute of Technology
- Yu Bai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Strained tri-channel layer for semiconductor-based electronic devices
- Patent number 7,791,107
- Issue date Sep 7, 2010
- Massachusetts Institute of Technology
- Saurabh Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for a high-speed semiconductor device having a...
- Patent number 7,301,180
- Issue date Nov 27, 2007
- Massachusetts Institute of Technology
- Minjoo L. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures with planar strained layers
- Patent number 7,141,820
- Issue date Nov 28, 2006
- AmberWave Systems Corporation
- Minjoo L. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving hole mobility enhancement in strained silicon...
- Patent number 7,005,668
- Issue date Feb 28, 2006
- Massachusetts Institute of Technology
- Minjoo L. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of P-type metal-oxide-semiconductor field effect transi...
- Patent number 6,916,727
- Issue date Jul 12, 2005
- Massachusetts Institute of Technology
- Christopher W. Leitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of planar strained layers
- Patent number 6,730,551
- Issue date May 4, 2004
- Massachusetts Institute of Technology
- Minjoo L. Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES
- Publication number 20110187412
- Publication date Aug 4, 2011
- Tso-Ping Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED GE FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS
- Publication number 20090114902
- Publication date May 7, 2009
- Yu Bai
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRUCTURE AND METHOD FOR A HIGH-SPEED SEMICONDUCTOR DEVICE HAVING A...
- Publication number 20080128747
- Publication date Jun 5, 2008
- Minjoo L. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate devices and method of making same
- Publication number 20070252223
- Publication date Nov 1, 2007
- Massachusetts Institute of Technology
- Minjoo Larry Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures with planar strained layers
- Publication number 20070072354
- Publication date Mar 29, 2007
- Massachusetts Institute of Technology
- Minjoo L. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained tri-channel layer for semiconductor-based electronic devices
- Publication number 20050279992
- Publication date Dec 22, 2005
- Saurabh Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement of p-type metal-oxide-semiconductor field effect transi...
- Publication number 20050151164
- Publication date Jul 14, 2005
- AmberWave Systems Corporation
- Christopher W. Leitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures with planar strained layers
- Publication number 20040164318
- Publication date Aug 26, 2004
- Massachusetts Institute of Technology
- Minjoo L. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for improving hole mobility enhancement in strained silicon...
- Publication number 20040053470
- Publication date Mar 18, 2004
- Minjoo L. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for a high-speed semiconductor device
- Publication number 20030052334
- Publication date Mar 20, 2003
- Minjoo L. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of planar strained layers
- Publication number 20030025131
- Publication date Feb 6, 2003
- Massachusetts Institute of Technology
- Minjoo L. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement of p-type metal-oxide-semiconductor field effect transi...
- Publication number 20020197803
- Publication date Dec 26, 2002
- AmberWave Systems Corporation
- Christopher W. Leitz
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Structure and method for a high-speed semiconductor device having a...

Complementary metal oxide semiconductor devices

Tensile strained GE for electronic and optoelectronic applications

Strained tri-channel layer for semiconductor-based electronic devices

Structure and method for a high-speed semiconductor device having a...

Structures with planar strained layers

Method for improving hole mobility enhancement in strained silicon...

Enhancement of P-type metal-oxide-semiconductor field effect transi...

Formation of planar strained layers

Patents Applicationslast 30 patents

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES

TENSILE STRAINED GE FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS

STRUCTURE AND METHOD FOR A HIGH-SPEED SEMICONDUCTOR DEVICE HAVING A...

Insulated gate devices and method of making same

Structures with planar strained layers

Strained tri-channel layer for semiconductor-based electronic devices

Enhancement of p-type metal-oxide-semiconductor field effect transi...

Structures with planar strained layers

Method for improving hole mobility enhancement in strained silicon...

Structure and method for a high-speed semiconductor device

Formation of planar strained layers

Enhancement of p-type metal-oxide-semiconductor field effect transi...