Myung-Hee Na

Person

Lagrangeville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Contact-first field-effect transistors
- Patent number 11,101,367
- Issue date Aug 24, 2021
- International Business Machines Corporation
- Terence B. Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to form bi-layer composite phase-change-memory...
- Patent number 10,937,961
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel orientation of CMOS gate-all-around field-effect transistor...
- Patent number 10,892,331
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Tenko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to form phase change memory cell with self- al...
- Patent number 10,833,267
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned high density and size adjustable phase change memory
- Patent number 10,803,933
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Injo Ok
- G11 - INFORMATION STORAGE
Information Patent Grant
Reliable gate contacts over active areas
- Patent number 10,693,005
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Standard cell architecture with at least one gate contact over an a...
- Patent number 10,424,574
- Issue date Sep 24, 2019
- International Business Machines Corporation
- Albert M. Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Standard cell architecture with at least one gate contact over an a...
- Patent number 10,424,576
- Issue date Sep 24, 2019
- International Business Machines Corporation
- Albert M. Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Metal fill optimization for self-aligned double patterning
- Patent number 10,381,338
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Albert M. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra dense and stable 4T SRAM cell design having NFETs and PFETs
- Patent number 10,381,068
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Myung-Hee Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliable gate contacts over active areas
- Patent number 10,381,480
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal fill optimization for self-aligned double patterning
- Patent number 9,735,029
- Issue date Aug 15, 2017
- International Business Machines Corporation
- Albert M. Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistor having delay element with back gate
- Patent number 9,520,391
- Issue date Dec 13, 2016
- GLOBALFOUNDRIES Inc.
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained finFET with an electrically isolated channel
- Patent number 9,190,520
- Issue date Nov 17, 2015
- GLOBALFOUNDRIES Inc.
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET formation with late fin reveal
- Patent number 9,171,935
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES Inc.
- Seong-Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-germanium fins and silicon fins on a bulk substrate
- Patent number 9,029,913
- Issue date May 12, 2015
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained finFET with an electrically isolated channel
- Patent number 8,928,086
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Determining current of a first FET of body connected FETs
- Patent number 8,648,647
- Issue date Feb 11, 2014
- International Business Machines Corporation
- Myung-Hee Na
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device including body connected FETs
- Patent number 8,542,058
- Issue date Sep 24, 2013
- International Business Machines Corporation
- Myung-Hee Na
- G01 - MEASURING TESTING
Information Patent Grant
Method of providing threshold voltage adjustment through gate diele...
- Patent number 8,354,309
- Issue date Jan 15, 2013
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment through gate dielectric stack modifica...
- Patent number 8,106,455
- Issue date Jan 31, 2012
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Efficient methodology for the accurate generation of customized com...
- Patent number 8,032,349
- Issue date Oct 4, 2011
- International Business Machines Corporation
- Sim Y. Loo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Rotated field effect transistors and method of manufacture
- Patent number 7,795,098
- Issue date Sep 14, 2010
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rotated field effect transistors and method of manufacture
- Patent number 7,335,563
- Issue date Feb 26, 2008
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structures for measuring gate tunneling leakage paramete...
- Patent number 7,011,980
- Issue date Mar 14, 2006
- International Business Machines Corporation
- Myung-Hee Na
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CHANNEL ORIENTATION OF CMOS GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR...
- Publication number 20200388681
- Publication date Dec 10, 2020
- International Business Machines Corporation
- Tenko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO FORM BI-LAYER COMPOSITE PHASE-CHANGE-MEMORY...
- Publication number 20200144501
- Publication date May 7, 2020
- International Business Machines Corporation
- Injo OK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method to Form Phase Change Memory Cell with Self-Ali...
- Publication number 20200136043
- Publication date Apr 30, 2020
- International Business Machines Corporation
- Injo OK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT-FIRST FIELD-EFFECT TRANSISTORS
- Publication number 20200066871
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Terence P. Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned High Density and Size Adjustable Phase Change Memory
- Publication number 20200066337
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Injo OK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELIABLE GATE CONTACTS OVER ACTIVE AREAS
- Publication number 20190259869
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra Dense and Stable 4T SRAM Cell Design Having Nfets And Pfets
- Publication number 20190189195
- Publication date Jun 20, 2019
- International Business Machines Corporation
- Myung-Hee Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELIABLE GATE CONTACTS OVER ACTIVE AREAS
- Publication number 20190097016
- Publication date Mar 28, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STANDARD CELL ARCHITECTURE WITH AT LEAST ONE GATE CONTACT OVER AN A...
- Publication number 20180211948
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Albert M. Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STANDARD CELL ARCHITECTURE WITH AT LEAST ONE GATE CONTACT OVER AN A...
- Publication number 20180211947
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Albert M. Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METAL FILL OPTIMIZATION FOR SELF-ALIGNED DOUBLE PATTERNING
- Publication number 20180082854
- Publication date Mar 22, 2018
- International Business Machines Corporation
- Albert M. Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONTACT-FIRST FIELD-EFFECT TRANSISTORS
- Publication number 20160372600
- Publication date Dec 22, 2016
- International Business Machines Corporation
- Terence B. Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET FORMATION WITH LATE FIN REVEAL
- Publication number 20150255569
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Seong-Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED FINFET WITH AN ELECTRICALLY ISOLATED CHANNEL
- Publication number 20140377924
- Publication date Dec 25, 2014
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-GERMANIUM FINS AND SILICON FINS ON A BULK SUBSTRATE
- Publication number 20140252413
- Publication date Sep 11, 2014
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED FINFET WITH AN ELECTRICALLY ISOLATED CHANNEL
- Publication number 20140191297
- Publication date Jul 10, 2014
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BODY CONNECTED FETS
- Publication number 20130278281
- Publication date Oct 24, 2013
- Myung-Hee Na
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BODY CONNECTED FETS
- Publication number 20120169415
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Myung-Hee Na
- G01 - MEASURING TESTING
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT THROUGH GATE DIELECTRIC STACK MODIFICA...
- Publication number 20120108017
- Publication date May 3, 2012
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Adjustment Through Gate Dielectric Stack Modifica...
- Publication number 20100276753
- Publication date Nov 4, 2010
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EFFICIENT METHODOLOGY FOR THE ACCURATE GENERATION OF CUSTOMIZED COM...
- Publication number 20080183442
- Publication date Jul 31, 2008
- Sim Y. Loo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ROTATED FIELD EFFECT TRANSISTORS AND METHOD OF MANUFACTURE
- Publication number 20070105326
- Publication date May 10, 2007
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Body-Contacted Silicon on Insulation (SOI) field effect transistors
- Publication number 20070048925
- Publication date Mar 1, 2007
- International Business Machines Corporation
- Kevin McStay
- H01 - BASIC ELECTRIC ELEMENTS

Myung-Hee Na

Person

Patents Grantslast 30 patents

Contact-first field-effect transistors

Structure and method to form bi-layer composite phase-change-memory...

Channel orientation of CMOS gate-all-around field-effect transistor...

Structure and method to form phase change memory cell with self- al...

Self-aligned high density and size adjustable phase change memory

Reliable gate contacts over active areas

Standard cell architecture with at least one gate contact over an a...

Standard cell architecture with at least one gate contact over an a...

Metal fill optimization for self-aligned double patterning

Ultra dense and stable 4T SRAM cell design having NFETs and PFETs

Reliable gate contacts over active areas

Metal fill optimization for self-aligned double patterning

Field effect transistor having delay element with back gate

Strained finFET with an electrically isolated channel

FinFET formation with late fin reveal

Silicon-germanium fins and silicon fins on a bulk substrate

Strained finFET with an electrically isolated channel

Determining current of a first FET of body connected FETs

Semiconductor device including body connected FETs

Method of providing threshold voltage adjustment through gate diele...

Threshold voltage adjustment through gate dielectric stack modifica...

Efficient methodology for the accurate generation of customized com...

Rotated field effect transistors and method of manufacture

Rotated field effect transistors and method of manufacture

Method and structures for measuring gate tunneling leakage paramete...

Patents Applicationslast 30 patents

CHANNEL ORIENTATION OF CMOS GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR...

STRUCTURE AND METHOD TO FORM BI-LAYER COMPOSITE PHASE-CHANGE-MEMORY...

Structure and Method to Form Phase Change Memory Cell with Self-Ali...

CONTACT-FIRST FIELD-EFFECT TRANSISTORS

Self-Aligned High Density and Size Adjustable Phase Change Memory

RELIABLE GATE CONTACTS OVER ACTIVE AREAS

Ultra Dense and Stable 4T SRAM Cell Design Having Nfets And Pfets

RELIABLE GATE CONTACTS OVER ACTIVE AREAS

STANDARD CELL ARCHITECTURE WITH AT LEAST ONE GATE CONTACT OVER AN A...

STANDARD CELL ARCHITECTURE WITH AT LEAST ONE GATE CONTACT OVER AN A...

METAL FILL OPTIMIZATION FOR SELF-ALIGNED DOUBLE PATTERNING

CONTACT-FIRST FIELD-EFFECT TRANSISTORS

FinFET FORMATION WITH LATE FIN REVEAL

STRAINED FINFET WITH AN ELECTRICALLY ISOLATED CHANNEL

SILICON-GERMANIUM FINS AND SILICON FINS ON A BULK SUBSTRATE

STRAINED FINFET WITH AN ELECTRICALLY ISOLATED CHANNEL

SEMICONDUCTOR DEVICE INCLUDING BODY CONNECTED FETS

SEMICONDUCTOR DEVICE INCLUDING BODY CONNECTED FETS

THRESHOLD VOLTAGE ADJUSTMENT THROUGH GATE DIELECTRIC STACK MODIFICA...

Threshold Voltage Adjustment Through Gate Dielectric Stack Modifica...

EFFICIENT METHODOLOGY FOR THE ACCURATE GENERATION OF CUSTOMIZED COM...

ROTATED FIELD EFFECT TRANSISTORS AND METHOD OF MANUFACTURE

Body-Contacted Silicon on Insulation (SOI) field effect transistors