Philip A. Fisher

Person

Foster City, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Mask for forming integrated circuit
- Patent number 8,629,535
- Issue date Jan 14, 2014
- GLOBALFOUNDRIES Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate stack and semiconductor gate stack for CMOS devices
- Patent number 8,030,709
- Issue date Oct 4, 2011
- International Business Machines Corporation
- Charlotte D. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming offset spacers for semiconductor device arrangem...
- Patent number 7,767,508
- Issue date Aug 3, 2010
- Advanced Micro Devices, Inc.
- Philip A. Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming integrated circuit
- Patent number 7,521,304
- Issue date Apr 21, 2009
- Advanced Micro Devices, Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for semiconductor gate line dimension reduction
- Patent number 7,268,066
- Issue date Sep 11, 2007
- Advanced Micro Devices, Inc.
- Douglas J. Bonser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and arrangement for reducing source/drain resistance with ep...
- Patent number 7,183,169
- Issue date Feb 27, 2007
- Advanced Micro Devices, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using carbon spacers for critical dimension (CD) reduction
- Patent number 7,169,711
- Issue date Jan 30, 2007
- Advanced Micro Devices, Inc.
- Christopher F. Lyons
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of amorphous carbon for gate patterning
- Patent number 7,015,124
- Issue date Mar 21, 2006
- Advanced Micro Devices, Inc.
- Philip A. Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of amorphous carbon hard mask for gate patterning to eliminate...
- Patent number 6,884,733
- Issue date Apr 26, 2005
- Advanced Micro Devices, Inc.
- Srikanteswara Dakshina-Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of amorphous carbon ARC stack having graded transition be...
- Patent number 6,875,664
- Issue date Apr 5, 2005
- Advanced Micro Devices, Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for semiconductor gate line dimension reduction
- Patent number 6,849,530
- Issue date Feb 1, 2005
- Advanced Micro Devices
- Douglas J. Bonser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced transistor gate using E-beam radiation
- Patent number 6,828,259
- Issue date Dec 7, 2004
- Advanced Micro Devices, Inc.
- Philip A. Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective stress-inducing implant and resulting pattern distortion...
- Patent number 6,825,114
- Issue date Nov 30, 2004
- Advanced Micro Devices, Inc.
- Philip A. Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor-on-insulator device with thermoelect...
- Patent number 6,784,073
- Issue date Aug 31, 2004
- Advanced Micro Devices, Inc.
- Philip A. Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified film stack and patterning strategy for stress compensation...
- Patent number 6,773,998
- Issue date Aug 10, 2004
- Advanced Micro Devices, Inc.
- Philip A. Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing gate line deformation and reducing gate line wi...
- Patent number 6,764,947
- Issue date Jul 20, 2004
- Advanced Micro Devices, Inc.
- Darin Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing pattern deformation and photoresist poisoning i...
- Patent number 6,764,949
- Issue date Jul 20, 2004
- Advanced Micro Devices, Inc.
- Douglas J. Bonser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS process with an integrated, high performance, silicide agglome...
- Patent number 6,756,255
- Issue date Jun 29, 2004
- Advanced Micro Devices, Inc.
- Ciby Thuruthiyil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for STI using passivation material for trench...
- Patent number 6,747,333
- Issue date Jun 8, 2004
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing gate oxide surface irregularities
- Patent number 6,723,666
- Issue date Apr 20, 2004
- Advanced Micro Devices, Inc.
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of diamond as a hard mask material
- Patent number 6,673,684
- Issue date Jan 6, 2004
- Advanced Micro Devices, Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator device with thermoelectric cooler on sur...
- Patent number 6,674,128
- Issue date Jan 6, 2004
- Advanced Micro Devices, Inc.
- Philip A. Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using amorphous carbon film as a sacrificial layer in rep...
- Patent number 6,664,154
- Issue date Dec 16, 2003
- Advanced Micro Devices, Inc.
- Scott A. Bell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of shallow trench isolation (STI) formation using amorphous...
- Patent number 6,653,202
- Issue date Nov 25, 2003
- Advanced Micro Devices, Inc.
- Philip A. Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of pinhole decoration and detection
- Patent number 6,596,553
- Issue date Jul 22, 2003
- Advanced Micro Devices, Inc.
- David Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using amorphous carbon as spacer material in a disposable...
- Patent number 6,559,017
- Issue date May 6, 2003
- Advanced Micro Devices, Inc.
- David E. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Linerless shallow trench isolation method
- Patent number 6,534,379
- Issue date Mar 18, 2003
- Advanced Micro Devices, Inc.
- Philip Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for shallow trench isolation using passivation material for...
- Patent number 6,524,929
- Issue date Feb 25, 2003
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for shallow trench isolation with removal of strained island...
- Patent number 6,521,510
- Issue date Feb 18, 2003
- Advanced Micro Devices, Inc.
- Philip Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming sub-lithographic spaces between polysilicon lines
- Patent number 6,500,756
- Issue date Dec 31, 2002
- Advanced Micro Devices, Inc.
- Scott A. Bell
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MASK FOR FORMING INTEGRATED CIRCUIT
- Publication number 20120007221
- Publication date Jan 12, 2012
- GLOBALFOUNDRIES INC.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STACK AND SEMICONDUCTOR GATE STACK FOR CMOS DEVICES
- Publication number 20090179283
- Publication date Jul 16, 2009
- International Business Machines Corporation
- Charlotte D. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming offset spacers for semiconductor device arrangem...
- Publication number 20080090368
- Publication date Apr 17, 2008
- Advanced Micro Devices, Inc.
- Philip A. Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench replacement gate process for transistors having elevated sou...
- Publication number 20080070356
- Publication date Mar 20, 2008
- Advanced Micro Devices, Inc.
- Laura A. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for semiconductor gate line dimension reduction
- Publication number 20050020019
- Publication date Jan 27, 2005
- Advanced Micro Devices, Inc.
- Douglas J. Bonser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED TRANSISTOR GATE USING E-BEAM RADIATION
- Publication number 20040209411
- Publication date Oct 21, 2004
- Advanced Micro Devices, Inc.
- Philip A. Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for semiconductor gate line dimension reduction
- Publication number 20040043590
- Publication date Mar 4, 2004
- Advanced Micro Devices, Inc.
- Douglas J. Bonser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for reducing pattern deformation and photoresist poisoning i...
- Publication number 20040023475
- Publication date Feb 5, 2004
- Advanced Micro Devices, Inc.
- Douglas J. Bonser
- H01 - BASIC ELECTRIC ELEMENTS

Philip A. Fisher

Person

Patents Grantslast 30 patents

Mask for forming integrated circuit

Metal gate stack and semiconductor gate stack for CMOS devices

Method for forming offset spacers for semiconductor device arrangem...

Method for forming integrated circuit

Method for semiconductor gate line dimension reduction

Method and arrangement for reducing source/drain resistance with ep...

Method of using carbon spacers for critical dimension (CD) reduction

Use of amorphous carbon for gate patterning

Use of amorphous carbon hard mask for gate patterning to eliminate...

Formation of amorphous carbon ARC stack having graded transition be...

Method for semiconductor gate line dimension reduction

Enhanced transistor gate using E-beam radiation

Selective stress-inducing implant and resulting pattern distortion...

Method of making semiconductor-on-insulator device with thermoelect...

Modified film stack and patterning strategy for stress compensation...

Method for reducing gate line deformation and reducing gate line wi...

Method for reducing pattern deformation and photoresist poisoning i...

CMOS process with an integrated, high performance, silicide agglome...

Method and apparatus for STI using passivation material for trench...

Method for reducing gate oxide surface irregularities

Use of diamond as a hard mask material

Semiconductor-on-insulator device with thermoelectric cooler on sur...

Method of using amorphous carbon film as a sacrificial layer in rep...

Method of shallow trench isolation (STI) formation using amorphous...

Method of pinhole decoration and detection

Method of using amorphous carbon as spacer material in a disposable...

Linerless shallow trench isolation method

Method for shallow trench isolation using passivation material for...

Method for shallow trench isolation with removal of strained island...

Method of forming sub-lithographic spaces between polysilicon lines

Patents Applicationslast 30 patents

MASK FOR FORMING INTEGRATED CIRCUIT

METAL GATE STACK AND SEMICONDUCTOR GATE STACK FOR CMOS DEVICES

Method for forming offset spacers for semiconductor device arrangem...

Trench replacement gate process for transistors having elevated sou...

Method for semiconductor gate line dimension reduction

ENHANCED TRANSISTOR GATE USING E-BEAM RADIATION

Method for semiconductor gate line dimension reduction

Method for reducing pattern deformation and photoresist poisoning i...