PHILLIP G. WALD

Person

BOISE, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
ROM redundancy in ROM embedded DRAM
- Patent number 7,366,946
- Issue date Apr 29, 2008
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
ROM embedded DRAM with anti-fuse programming
- Patent number 7,218,547
- Issue date May 15, 2007
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Grant
ROM redundancy in ROM embedded DRAM
- Patent number 7,174,477
- Issue date Feb 6, 2007
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
Embedded ROM device using substrate leakage
- Patent number 7,099,212
- Issue date Aug 29, 2006
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Grant
Embedded ROM device using substrate leakage
- Patent number 7,012,006
- Issue date Mar 14, 2006
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Grant
Embedded ROM device using substrate leakage
- Patent number 7,001,816
- Issue date Feb 21, 2006
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Grant
ROM embedded DRAM with bias sensing
- Patent number 6,996,021
- Issue date Feb 7, 2006
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
Half density ROM embedded DRAM
- Patent number 6,903,957
- Issue date Jun 7, 2005
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
6F2 architecture ROM embedded DRAM
- Patent number 6,865,100
- Issue date Mar 8, 2005
- Micron Technology, Inc.
- Phillip G. Wald
- G11 - INFORMATION STORAGE
Information Patent Grant
ROM embedded DRAM with bias sensing
- Patent number 6,865,130
- Issue date Mar 8, 2005
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
ROM embedded DRAM with dielectric removal/short
- Patent number 6,852,611
- Issue date Feb 8, 2005
- Micron Technology, Inc.
- Phillip G. Wald
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming capacitors
- Patent number 6,825,095
- Issue date Nov 30, 2004
- Micron Technology, Inc.
- Kunal R. Parekh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ROM embedded DRAM with bias sensing
- Patent number 6,788,603
- Issue date Sep 7, 2004
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
ROM embedded DRAM with programming
- Patent number 6,785,167
- Issue date Aug 31, 2004
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Grant
Embedded ROM device using substrate leakage
- Patent number 6,781,867
- Issue date Aug 24, 2004
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Grant
ROM embedded DRAM with bias sensing
- Patent number 6,771,529
- Issue date Aug 3, 2004
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
ROM embedded DRAM with bias sensing
- Patent number 6,768,664
- Issue date Jul 27, 2004
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for improving a stepper signal in a planarized surface over...
- Patent number 6,753,617
- Issue date Jun 22, 2004
- Micron Technology, Inc.
- William A. Stanton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half density ROM embedded DRAM
- Patent number 6,747,889
- Issue date Jun 8, 2004
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
High-pressure anneal process for integrated circuits
- Patent number 6,737,730
- Issue date May 18, 2004
- Micron Technology, Inc.
- Richard H. Lane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ROM embedded DRAM with anti-fuse programming
- Patent number 6,735,108
- Issue date May 11, 2004
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Grant
DRAM with bias sensing
- Patent number 6,731,556
- Issue date May 4, 2004
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
Capacitors and DRAM arrays
- Patent number 6,710,390
- Issue date Mar 23, 2004
- Micron Technology, Inc.
- Kunal R. Parekh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High pressure anneal process for integrated circuits
- Patent number 6,703,325
- Issue date Mar 9, 2004
- Micron Technology, Inc.
- Richard H. Lane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-pressure anneal process for integrated circuits
- Patent number 6,703,327
- Issue date Mar 9, 2004
- Micron Technology, Inc.
- Richard H. Lane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-pressure anneal process for integrated circuits
- Patent number 6,703,326
- Issue date Mar 9, 2004
- Micron Technology, Inc.
- Richard H. Lane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-pressure anneal process for integrated circuits
- Patent number 6,693,048
- Issue date Feb 17, 2004
- Micron Technology, Inc.
- Richard H. Lane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-pressure anneal process for integrated circuits
- Patent number 6,673,726
- Issue date Jan 6, 2004
- Micron Technology, Inc.
- Richard H. Lane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-pressure anneal process for integrated circuits
- Patent number 6,670,289
- Issue date Dec 30, 2003
- Micron Technology, Inc.
- Richard H. Lane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ROM embedded DRAM with dielectric removal/short
- Patent number 6,665,207
- Issue date Dec 16, 2003
- Micron Technology, Inc.
- Phillip G. Wald
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ROM redundancy in ROM embedded DRAM
- Publication number 20070168783
- Publication date Jul 19, 2007
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Application
Embedded ROM device using substrate leakage
- Publication number 20060094167
- Publication date May 4, 2006
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Application
Error correction in ROM embedded DRAM
- Publication number 20060041822
- Publication date Feb 23, 2006
- Micron Technology, Inc.
- Scott Derner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Error correction in ROM embedded DRAM
- Publication number 20060005107
- Publication date Jan 5, 2006
- Micron Technology, Inc.
- Scott Derner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Error correction in ROM embedded DRAM
- Publication number 20050289442
- Publication date Dec 29, 2005
- Micron Technology, Inc.
- Scott Derner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Error correction in ROM embedded DRAM
- Publication number 20050289424
- Publication date Dec 29, 2005
- Micron Technology, Inc.
- Scott Derner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Error correction in ROM embedded DRAM
- Publication number 20050283689
- Publication date Dec 22, 2005
- Micron Technology, Inc.
- Scott Derner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Embedded ROM device using substrate leakage
- Publication number 20050024910
- Publication date Feb 3, 2005
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Application
Embedded ROM device using substrate leakage
- Publication number 20050018466
- Publication date Jan 27, 2005
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Application
Embedded ROM device using substrate leakage
- Publication number 20050018508
- Publication date Jan 27, 2005
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Application
ROM embedded DRAM with bias sensing
- Publication number 20040264258
- Publication date Dec 30, 2004
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Application
Half density ROM embedded DRAM
- Publication number 20040233741
- Publication date Nov 25, 2004
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Application
ROM embedded DRAM with anti-fuse programming
- Publication number 20040208050
- Publication date Oct 21, 2004
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Application
ROM redundancy in ROM embedded DRAM
- Publication number 20040153725
- Publication date Aug 5, 2004
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Application
ROM embedded DRAM with dielectric removal/short
- Publication number 20040071022
- Publication date Apr 15, 2004
- Micron Technology, Inc.
- Phillip G. Wald
- G11 - INFORMATION STORAGE
Information Patent Application
6F2 architecture ROM embedded dram
- Publication number 20040027848
- Publication date Feb 12, 2004
- Micron Technology, Inc.
- Phillip G. Wald
- G11 - INFORMATION STORAGE
Information Patent Application
Embedded ROM device using substrate leakage
- Publication number 20040008534
- Publication date Jan 15, 2004
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Application
ROM embedded DRAM with anti-fuse programming
- Publication number 20040004855
- Publication date Jan 8, 2004
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Application
ROM embedded DRAM with programming
- Publication number 20030231519
- Publication date Dec 18, 2003
- Micron Technology, Inc.
- Casey Kurth
- G11 - INFORMATION STORAGE
Information Patent Application
Proximity lookup for large arrays
- Publication number 20030185062
- Publication date Oct 2, 2003
- Micron Technology, Inc.
- Phillip G. Wald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROM embedded DRAM with bias sensing
- Publication number 20030147268
- Publication date Aug 7, 2003
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Application
ROM embedded DRAM with bias sensing
- Publication number 20030137882
- Publication date Jul 24, 2003
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Application
ROM embedded DRAM with bias sensing
- Publication number 20030128610
- Publication date Jul 10, 2003
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Application
DRAM with bias sensing
- Publication number 20030128609
- Publication date Jul 10, 2003
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Application
ROM embedded DRAM with bias sensing
- Publication number 20030128566
- Publication date Jul 10, 2003
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Application
Error correction in ROM embedded DRAM
- Publication number 20030115538
- Publication date Jun 19, 2003
- Micron Technology, Inc.
- Scott Derner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Half density ROM embedded DRAM
- Publication number 20030107912
- Publication date Jun 12, 2003
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Application
DRAM WITH BIAS SENSING
- Publication number 20030107935
- Publication date Jun 12, 2003
- Micron Technology, Inc.
- Scott Derner
- G11 - INFORMATION STORAGE
Information Patent Application
ROM embedded DRAM with dielectric removal/short
- Publication number 20030090923
- Publication date May 15, 2003
- Micron Technology, Inc.
- Phillip G. Wald
- G11 - INFORMATION STORAGE
Information Patent Application
High-pressure anneal process for integrated circuits
- Publication number 20030003672
- Publication date Jan 2, 2003
- Richard H. Lane
- H01 - BASIC ELECTRIC ELEMENTS

PHILLIP G. WALD

Person

Patents Grantslast 30 patents

ROM redundancy in ROM embedded DRAM

ROM embedded DRAM with anti-fuse programming

ROM redundancy in ROM embedded DRAM

Embedded ROM device using substrate leakage

Embedded ROM device using substrate leakage

Embedded ROM device using substrate leakage

ROM embedded DRAM with bias sensing

Half density ROM embedded DRAM

6F2 architecture ROM embedded DRAM

ROM embedded DRAM with bias sensing

ROM embedded DRAM with dielectric removal/short

Methods of forming capacitors

ROM embedded DRAM with bias sensing

ROM embedded DRAM with programming

Embedded ROM device using substrate leakage

ROM embedded DRAM with bias sensing

ROM embedded DRAM with bias sensing

Method for improving a stepper signal in a planarized surface over...

Half density ROM embedded DRAM

High-pressure anneal process for integrated circuits

ROM embedded DRAM with anti-fuse programming

DRAM with bias sensing

Capacitors and DRAM arrays

High pressure anneal process for integrated circuits

High-pressure anneal process for integrated circuits

High-pressure anneal process for integrated circuits

High-pressure anneal process for integrated circuits

High-pressure anneal process for integrated circuits

High-pressure anneal process for integrated circuits

ROM embedded DRAM with dielectric removal/short

Patents Applicationslast 30 patents

ROM redundancy in ROM embedded DRAM

Embedded ROM device using substrate leakage

Error correction in ROM embedded DRAM

Error correction in ROM embedded DRAM

Error correction in ROM embedded DRAM

Error correction in ROM embedded DRAM

Error correction in ROM embedded DRAM

Embedded ROM device using substrate leakage

Embedded ROM device using substrate leakage

Embedded ROM device using substrate leakage

ROM embedded DRAM with bias sensing

Half density ROM embedded DRAM

ROM embedded DRAM with anti-fuse programming

ROM redundancy in ROM embedded DRAM

ROM embedded DRAM with dielectric removal/short

6F2 architecture ROM embedded dram

Embedded ROM device using substrate leakage

ROM embedded DRAM with anti-fuse programming

ROM embedded DRAM with programming

Proximity lookup for large arrays

ROM embedded DRAM with bias sensing

ROM embedded DRAM with bias sensing

ROM embedded DRAM with bias sensing

DRAM with bias sensing

ROM embedded DRAM with bias sensing

Error correction in ROM embedded DRAM

Half density ROM embedded DRAM

DRAM WITH BIAS SENSING

ROM embedded DRAM with dielectric removal/short

High-pressure anneal process for integrated circuits