Ronnen Andrew Roy

Person

Ossining, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned isolation double-gate FET
- Patent number 7,259,049
- Issue date Aug 21, 2007
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for reduction of contact resistance of metal s...
- Patent number 7,102,234
- Issue date Sep 5, 2006
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for controlling the interface roughness of cobalt disilicide
- Patent number 7,081,676
- Issue date Jul 25, 2006
- International Business Machines Corporation
- Paul David Agnello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elevated source drain disposable spacer CMOS
- Patent number 7,074,684
- Issue date Jul 11, 2006
- International Business Machines Corporation
- Ronnen A. Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned silicide (salicide) process for low resistivity contac...
- Patent number 6,987,050
- Issue date Jan 17, 2006
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for ultra-low contact resistance CMOS formed b...
- Patent number 6,972,250
- Issue date Dec 6, 2005
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned isolation double-gate FET
- Patent number 6,946,696
- Issue date Sep 20, 2005
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for controlling the interface roughness of cob...
- Patent number 6,809,030
- Issue date Oct 26, 2004
- International Business Machines Corporation
- Paul David Agnello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elevated source drain disposable spacer CMOS
- Patent number 6,777,298
- Issue date Aug 17, 2004
- International Business Machines Corporation
- Ronnen A. Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for reduction of contact resistance of metal s...
- Patent number 6,753,606
- Issue date Jun 22, 2004
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
All-in-one disposable/permanent spacer elevated source/drain, self-...
- Patent number 6,727,135
- Issue date Apr 27, 2004
- International Business Machines Corporation
- Kam Leung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned silicide process utilizing ion implants for reduced si...
- Patent number 6,716,708
- Issue date Apr 6, 2004
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for ultra-low contact resistance CMOS formed b...
- Patent number 6,690,072
- Issue date Feb 10, 2004
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
All-in-one disposable/permanent spacer elevated source/drain, self-...
- Patent number 6,614,079
- Issue date Sep 2, 2003
- International Business Machines Corporation
- Kam Leung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned silicide process utilizing ion implants for reduced si...
- Patent number 6,555,880
- Issue date Apr 29, 2003
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned silicide (salicide) process for strained silicon MOSFE...
- Patent number 6,503,833
- Issue date Jan 7, 2003
- International Business Machines Corporation
- Atul Champaklal Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene-gate process for the fabrication of MOSFET devices with m...
- Patent number 6,440,808
- Issue date Aug 27, 2002
- International Business Machines Corporation
- Diane Catherine Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for controlling the interface roughness of cob...
- Patent number 6,440,851
- Issue date Aug 27, 2002
- International Business Machines Corporation
- Paul David Agnello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for retarding high temperature agglomeration o...
- Patent number 6,413,859
- Issue date Jul 2, 2002
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced ultra-shallow junctions in CMOS using high temperature sil...
- Patent number 6,410,430
- Issue date Jun 25, 2002
- International Business Machines Corporation
- Kam Leung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for reduction of contact resistance of metal s...
- Patent number 6,331,486
- Issue date Dec 18, 2001
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microwave annealing
- Patent number 6,316,123
- Issue date Nov 13, 2001
- International Business Machines Corporation
- Kam Leung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature formation of low resistivity titanium silicide
- Patent number 6,187,679
- Issue date Feb 13, 2001
- International Business Machines Corporation
- Cyril Cabral
- C30 - CRYSTAL GROWTH
Information Patent Grant
Microwave annealing
- Patent number 6,051,283
- Issue date Apr 18, 2000
- International Business Machines Corp.
- Kam Leung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature formation of low resistivity titanium silicide
- Patent number 5,828,131
- Issue date Oct 27, 1998
- International Business Machines Corporation
- Cyril Cabral
- C30 - CRYSTAL GROWTH
Information Patent Grant
Tasin oxygen diffusion barrier in multilayer structures
- Patent number 5,796,166
- Issue date Aug 18, 1998
- IBM Corporation
- Paul David Agnello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tasin oxygen diffusion barrier in multilayer structures
- Patent number 5,776,823
- Issue date Jul 7, 1998
- IBM Corporation
- Paul David Agnello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tasin oxygen diffusion barrier in multilayer structures
- Patent number 5,576,579
- Issue date Nov 19, 1996
- International Business Machines Corporation
- Paul D. Agnello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing oriented, polycrystalline superconducting ceram...
- Patent number 5,206,213
- Issue date Apr 27, 1993
- International Business Machines Corp.
- Jerome J. Cuomo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Self-aligned silicide (salicide) process for low resistivity contac...
- Publication number 20060043484
- Publication date Mar 2, 2006
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned isolation double-gate get
- Publication number 20050263797
- Publication date Dec 1, 2005
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Elevated source drain disposable spacer CMOS
- Publication number 20040266124
- Publication date Dec 30, 2004
- Ronnen A. Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for reduction of contact resistance of metal s...
- Publication number 20040195695
- Publication date Oct 7, 2004
- International Business Machines Corporation
- Cyril Cabral,
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned isolation double-gate FET
- Publication number 20040119102
- Publication date Jun 24, 2004
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for controlling the interface roughness of cob...
- Publication number 20040087160
- Publication date May 6, 2004
- International Business Machines Corporation
- Paul David Agnello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Elevated source drain disposable spacer CMOS
- Publication number 20030232464
- Publication date Dec 18, 2003
- Ronnen A. Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR ULTRA-LOW CONTACT RESISTANCE CMOS FORMED B...
- Publication number 20030219965
- Publication date Nov 27, 2003
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for ultra-low contact resistance CMOS formed b...
- Publication number 20030219971
- Publication date Nov 27, 2003
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
All-in-one disposable/permanent spacer elevated source/drain, self-...
- Publication number 20030209765
- Publication date Nov 13, 2003
- International Business Machines Corporation
- Kam Leung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned silicide process utilizing ion implants for reduced si...
- Publication number 20030132487
- Publication date Jul 17, 2003
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned silicide (salicide) process for strained silicon MOSFE...
- Publication number 20030068883
- Publication date Apr 10, 2003
- International Business Machines Corporation
- Atul Champaklal Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
All-in-one disposable/permanent spacer elevated source/drain, self-...
- Publication number 20030015762
- Publication date Jan 23, 2003
- International Business Machines Corporation
- Kam Leung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned silicide process utilizing ion implants for reduced si...
- Publication number 20020185691
- Publication date Dec 12, 2002
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for controlling the interface roughness of cob...
- Publication number 20020182836
- Publication date Dec 5, 2002
- International Business Machines Corporation
- Paul David Agnello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for retarding high temperature agglomeration o...
- Publication number 20020151158
- Publication date Oct 17, 2002
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR RETARDING HIGH TEMPERATURE AGGLOMERATION O...
- Publication number 20020061636
- Publication date May 23, 2002
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for reduction of contact resistance of metal s...
- Publication number 20020042197
- Publication date Apr 11, 2002
- International Business Machines Corporation
- Cyril Cabral,
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned silicone process for low resistivity contacts to thin...
- Publication number 20020031909
- Publication date Mar 14, 2002
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned silicide (salicide) process for low resistivity contac...
- Publication number 20020022366
- Publication date Feb 21, 2002
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS

Ronnen Andrew Roy

Person

Patents Grantslast 30 patents

Self-aligned isolation double-gate FET

Method and structure for reduction of contact resistance of metal s...

Structure for controlling the interface roughness of cobalt disilicide

Elevated source drain disposable spacer CMOS

Self-aligned silicide (salicide) process for low resistivity contac...

Method and structure for ultra-low contact resistance CMOS formed b...

Self-aligned isolation double-gate FET

Method and structure for controlling the interface roughness of cob...

Elevated source drain disposable spacer CMOS

Method and structure for reduction of contact resistance of metal s...

All-in-one disposable/permanent spacer elevated source/drain, self-...

Self-aligned silicide process utilizing ion implants for reduced si...

Method and structure for ultra-low contact resistance CMOS formed b...

All-in-one disposable/permanent spacer elevated source/drain, self-...

Self-aligned silicide process utilizing ion implants for reduced si...

Self-aligned silicide (salicide) process for strained silicon MOSFE...

Damascene-gate process for the fabrication of MOSFET devices with m...

Method and structure for controlling the interface roughness of cob...

Method and structure for retarding high temperature agglomeration o...

Enhanced ultra-shallow junctions in CMOS using high temperature sil...

Method and structure for reduction of contact resistance of metal s...

Microwave annealing

Low temperature formation of low resistivity titanium silicide

Microwave annealing

Low temperature formation of low resistivity titanium silicide

Tasin oxygen diffusion barrier in multilayer structures

Tasin oxygen diffusion barrier in multilayer structures

Tasin oxygen diffusion barrier in multilayer structures

Method of preparing oriented, polycrystalline superconducting ceram...

Patents Applicationslast 30 patents

Self-aligned silicide (salicide) process for low resistivity contac...

Self-aligned isolation double-gate get

Elevated source drain disposable spacer CMOS

Method and structure for reduction of contact resistance of metal s...

Self-aligned isolation double-gate FET

Method and structure for controlling the interface roughness of cob...

Elevated source drain disposable spacer CMOS

METHOD AND STRUCTURE FOR ULTRA-LOW CONTACT RESISTANCE CMOS FORMED B...

Method and structure for ultra-low contact resistance CMOS formed b...

All-in-one disposable/permanent spacer elevated source/drain, self-...

Self-aligned silicide process utilizing ion implants for reduced si...

Self-aligned silicide (salicide) process for strained silicon MOSFE...

All-in-one disposable/permanent spacer elevated source/drain, self-...

Self-aligned silicide process utilizing ion implants for reduced si...

Method and structure for controlling the interface roughness of cob...

Method and structure for retarding high temperature agglomeration o...

METHOD AND STRUCTURE FOR RETARDING HIGH TEMPERATURE AGGLOMERATION O...

Method and structure for reduction of contact resistance of metal s...

Self-aligned silicone process for low resistivity contacts to thin...

Self-aligned silicide (salicide) process for low resistivity contac...