Ruojia Lee

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
High quality oxide on an epitaxial layer
- Patent number 7,232,728
- Issue date Jun 19, 2007
- Micron Technology, Inc.
- Ruojia R. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum interconnects with metal silicide diffusion barriers
- Patent number 7,057,285
- Issue date Jun 6, 2006
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum-filled self-aligned trench for stacked capacitor structure...
- Patent number 6,787,428
- Issue date Sep 7, 2004
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum-filled self-aligned trench for stacked capacitor structure...
- Patent number 6,720,605
- Issue date Apr 13, 2004
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum-filled self-aligned trench for stacked capacitor structure...
- Patent number 6,465,319
- Issue date Oct 15, 2002
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum-filled self-aligned trench for stacked capacitor structure...
- Patent number 6,165,863
- Issue date Dec 26, 2000
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-fuse circuit and method wherein the read operation and program...
- Patent number RE35828
- Issue date Jun 23, 1998
- Micron Technology, Inc.
- Ruojia Lee
- 365 - Static information storage and retrieval
Information Patent Grant
Stacked delta cell capacitor
- Patent number 5,371,701
- Issue date Dec 6, 1994
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-time, voltage-programmable, logic element
- Patent number 5,331,196
- Issue date Jul 19, 1994
- Micron Technology, Inc.
- Tyler A. Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked delta cell capacitor
- Patent number 5,321,649
- Issue date Jun 14, 1994
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carrier injection dynamic random access memory having stacked deple...
- Patent number 5,321,285
- Issue date Jun 14, 1994
- Micron Technology, Inc.
- Ruojia Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked V-cell capacitor using a disposable outer digit line spacer
- Patent number 5,321,648
- Issue date Jun 14, 1994
- Micron Technology, Inc.
- Charles H. Dennison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-sided ozone TEOS spacer
- Patent number 5,286,993
- Issue date Feb 15, 1994
- Micron Technology, Inc.
- Tyler A. Lowrey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance sub-micron p-channel transistor with germanium imp...
- Patent number 5,266,510
- Issue date Nov 30, 1993
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making stacked W-cell capacitor
- Patent number 5,266,513
- Issue date Nov 30, 1993
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic memory having access transistor turn-off state
- Patent number 5,257,238
- Issue date Oct 26, 1993
- Micron Technology, Inc.
- Ruojia Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Reverse polysilicon CMOS fabrication
- Patent number 5,252,504
- Issue date Oct 12, 1993
- Micron Technology, Inc.
- Tyler A. Lowrey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate vertical field-effect transistor with high current d...
- Patent number 5,250,450
- Issue date Oct 5, 1993
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of read-only memory cells, eacch of which has a one-time, vol...
- Patent number 5,241,496
- Issue date Aug 31, 1993
- Micron Technology, Inc.
- Tyler A. Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned vertical intrinsic resistance
- Patent number 5,241,206
- Issue date Aug 31, 1993
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a chromeless phase shift reticle
- Patent number 5,240,796
- Issue date Aug 31, 1993
- Micron Technology, Inc.
- Ruojia Lee
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Stacked V-cell capacitor using a disposable outer digit line spacer
- Patent number 5,236,855
- Issue date Aug 17, 1993
- Micron Technology, Inc.
- Charles H. Dennison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming MOS transistors
- Patent number 5,227,321
- Issue date Jul 13, 1993
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked V-cell capacitor
- Patent number 5,219,778
- Issue date Jun 15, 1993
- Micron Technology, Inc.
- Charles H. Dennison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an enhanced dynamic random access memory (DRA...
- Patent number 5,208,176
- Issue date May 4, 1993
- Micron Technology, Inc.
- Aftab Ahmad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a stacked capacitor dram cell
- Patent number 5,196,364
- Issue date Mar 23, 1993
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell structure for erasable programmable read-only memories
- Patent number 5,192,872
- Issue date Mar 9, 1993
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making self-aligned vertical intrinsic resistance
- Patent number 5,177,030
- Issue date Jan 5, 1993
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked v-cell capacitor using a disposable composite dielectric on...
- Patent number 5,155,057
- Issue date Oct 13, 1992
- Micron Technology, Inc.
- Charles H. Dennison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive source line for high density programmable read-only memo...
- Patent number 5,149,665
- Issue date Sep 22, 1992
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High quality oxide on an epitaxial layer
- Publication number 20060264007
- Publication date Nov 23, 2006
- Micron Technology, Inc.
- Ruojia R. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnects including members integral with bit lines, as well as...
- Publication number 20060237821
- Publication date Oct 26, 2006
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Aluminum interconnects with metal silicide diffusion barriers
- Publication number 20050023587
- Publication date Feb 3, 2005
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Aluminum-filled self-aligned trench for stacked capacitor structure...
- Publication number 20020177272
- Publication date Nov 28, 2002
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

High quality oxide on an epitaxial layer

Aluminum interconnects with metal silicide diffusion barriers

Aluminum-filled self-aligned trench for stacked capacitor structure...

Aluminum-filled self-aligned trench for stacked capacitor structure...

Aluminum-filled self-aligned trench for stacked capacitor structure...

Aluminum-filled self-aligned trench for stacked capacitor structure...

Anti-fuse circuit and method wherein the read operation and program...

Stacked delta cell capacitor

One-time, voltage-programmable, logic element

Stacked delta cell capacitor

Carrier injection dynamic random access memory having stacked deple...

Stacked V-cell capacitor using a disposable outer digit line spacer

One-sided ozone TEOS spacer

High performance sub-micron p-channel transistor with germanium imp...

Method of making stacked W-cell capacitor

Dynamic memory having access transistor turn-off state

Reverse polysilicon CMOS fabrication

Insulated-gate vertical field-effect transistor with high current d...

Array of read-only memory cells, eacch of which has a one-time, vol...

Self-aligned vertical intrinsic resistance

Method of fabricating a chromeless phase shift reticle

Stacked V-cell capacitor using a disposable outer digit line spacer

Method for forming MOS transistors

Stacked V-cell capacitor

Method of fabricating an enhanced dynamic random access memory (DRA...

Method of making a stacked capacitor dram cell

Cell structure for erasable programmable read-only memories

Method of making self-aligned vertical intrinsic resistance

Stacked v-cell capacitor using a disposable composite dielectric on...

Conductive source line for high density programmable read-only memo...

Patents Applicationslast 30 patents

High quality oxide on an epitaxial layer

Interconnects including members integral with bit lines, as well as...

Aluminum interconnects with metal silicide diffusion barriers

Aluminum-filled self-aligned trench for stacked capacitor structure...