Sam G. Geha

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 11,784,243
- Issue date Oct 10, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 11,222,965
- Issue date Jan 11, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,903,342
- Issue date Jan 26, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,903,068
- Issue date Jan 26, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,896,973
- Issue date Jan 19, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,374,067
- Issue date Aug 6, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 9,449,831
- Issue date Sep 20, 2016
- Cypress Semiconductor Corporation
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 9,355,849
- Issue date May 31, 2016
- Cypress Semiconductor Corporation
- Sagy Charel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 9,349,824
- Issue date May 24, 2016
- Cypress Semiconductor Corporation
- Sagy Charel Levy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 8,643,124
- Issue date Feb 4, 2014
- Cypress Semiconductor Corporation
- Sagy Levy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integration of non-volatile charge trap memory devices and logic CM...
- Patent number 8,093,128
- Issue date Jan 10, 2012
- Cypress Semiconductor Corporation
- William W. C. Koutny, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating magnetic cell junctions and a structure res...
- Patent number 7,205,164
- Issue date Apr 17, 2007
- Silicon Magnetic Systems
- Sam Geha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self aligned contacts
- Patent number 6,803,318
- Issue date Oct 12, 2004
- Cypress Semiconductor Corp.
- Jianmin Qiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming contact openings
- Patent number 6,756,315
- Issue date Jun 29, 2004
- Cypress Semiconductor Corporation
- Hanna Bamnolker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature metallization process
- Patent number 6,756,302
- Issue date Jun 29, 2004
- Cypress Semiconductor Corporation
- Ende Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching a dielectric layer formed upon a barrier layer
- Patent number 6,693,042
- Issue date Feb 17, 2004
- Cypress Semiconductor Corp.
- Mehran G. Sedigh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hot metallization process
- Patent number 6,627,547
- Issue date Sep 30, 2003
- Cypress Semiconductor Corporation
- Sam G. Geha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal layer(s) and/or antireflective coating laye...
- Patent number 6,534,398
- Issue date Mar 18, 2003
- Cypress Semiconductor Corp.
- Ende Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hot metallization process
- Patent number 6,309,971
- Issue date Oct 30, 2001
- Cypress Semiconductor Corporation
- Sam G. Geha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal layer(s) and/or antireflective coating laye...
- Patent number 6,187,667
- Issue date Feb 13, 2001
- Cypress Semiconductor Corp.
- Ende Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a metal layer on a substrate, including formation...
- Patent number 6,156,645
- Issue date Dec 5, 2000
- Cypress Semiconductor Corporation
- Sam G. Geha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature metallization process
- Patent number 6,140,228
- Issue date Oct 31, 2000
- Cypress Semiconductor Corporation
- Ende Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge metal for interconnect layers
- Patent number 5,977,638
- Issue date Nov 2, 1999
- Cypress Semiconductor Corp.
- T. J. Rodgers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled isotropic etch process and method of forming an opening...
- Patent number 5,968,851
- Issue date Oct 19, 1999
- Cypress Semiconductor Corp.
- Sam Geha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Langmuir probe system for radio frequency excited plasma processing...
- Patent number 5,339,039
- Issue date Aug 16, 1994
- Arizona Board of Regents on behalf of the University of Arizona
- Robert N. Carlile
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20240234550
- Publication date Jul 11, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20230017648
- Publication date Jan 19, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- G11 - INFORMATION STORAGE
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20220093773
- Publication date Mar 24, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20210249254
- Publication date Aug 12, 2021
- Sagy Charel Levy
- G11 - INFORMATION STORAGE
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20200144399
- Publication date May 7, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20180366563
- Publication date Dec 20, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20180366564
- Publication date Dec 20, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20160308033
- Publication date Oct 20, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy LEVY
- G11 - INFORMATION STORAGE
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20160300724
- Publication date Oct 13, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Charel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20140284696
- Publication date Sep 25, 2014
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Charel Levy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20130175504
- Publication date Jul 11, 2013
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20110248332
- Publication date Oct 13, 2011
- Sagy Levy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Oxide-nitride-oxide stack having multiple oxynitride layers
- Publication number 20090179253
- Publication date Jul 16, 2009
- Cypress Semiconductor Corporation
- Sagy Levy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATION OF NON-VOLATILE CHARGE TRAP MEMORY DEVICES AND LOGIC CM...
- Publication number 20080293207
- Publication date Nov 27, 2008
- William W.C. Koutny, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hot metallization process
- Publication number 20010036717
- Publication date Nov 1, 2001
- Sam G. Geha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming metal layer(s) and/or antireflective coating laye...
- Publication number 20010008793
- Publication date Jul 19, 2001
- CYPRESS SEMICONDUCTOR CORP.
- Ende Shan
- H01 - BASIC ELECTRIC ELEMENTS

Sam G. Geha

Person

Patents Grantslast 30 patents

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Integration of non-volatile charge trap memory devices and logic CM...

Methods for fabricating magnetic cell junctions and a structure res...

Method of forming self aligned contacts

Method of forming contact openings

Low temperature metallization process

Method for etching a dielectric layer formed upon a barrier layer

Hot metallization process

Method of forming metal layer(s) and/or antireflective coating laye...

Hot metallization process

Method of forming metal layer(s) and/or antireflective coating laye...

Method of forming a metal layer on a substrate, including formation...

Low temperature metallization process

Edge metal for interconnect layers

Controlled isotropic etch process and method of forming an opening...

Langmuir probe system for radio frequency excited plasma processing...

Patents Applicationslast 30 patents

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

Oxide-nitride-oxide stack having multiple oxynitride layers

INTEGRATION OF NON-VOLATILE CHARGE TRAP MEMORY DEVICES AND LOGIC CM...

Hot metallization process

Method of forming metal layer(s) and/or antireflective coating laye...