Takayuki Gomi

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including high speed transistors and high volt...
- Patent number 6,977,426
- Issue date Dec 20, 2005
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated injection logic semiconductor device and method of fabri...
- Patent number 6,596,600
- Issue date Jul 22, 2003
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor device and method for manufacturing the same
- Patent number 6,222,250
- Issue date Apr 24, 2001
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,034,402
- Issue date Mar 7, 2000
- Sony Corporation
- Hiroaki Ammo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated injection logic semiconductor device
- Patent number 6,008,524
- Issue date Dec 28, 1999
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making plurality of bipolar transistors
- Patent number 5,976,940
- Issue date Nov 2, 1999
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing heterojunction bipolar device having Si.sub...
- Patent number 5,915,186
- Issue date Jun 22, 1999
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar semiconductor device
- Patent number 5,912,479
- Issue date Jun 15, 1999
- Sony Corporation
- Hideki Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of fabricating semiconductor device
- Patent number 5,893,743
- Issue date Apr 13, 1999
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor device and method for manufacturing the same
- Patent number 5,885,880
- Issue date Mar 23, 1999
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mesa bipolar transistor with sub base layer
- Patent number 5,861,640
- Issue date Jan 19, 1999
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of fabricating integrated heterojunction bipolar device and...
- Patent number 5,858,850
- Issue date Jan 12, 1999
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for making bipolar device having double polysi...
- Patent number 5,856,228
- Issue date Jan 5, 1999
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing Si-Ge base heterojunction bipolar device
- Patent number 5,846,867
- Issue date Dec 8, 1998
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming embedded diffusion layers using an alignment mark
- Patent number 5,830,799
- Issue date Nov 3, 1998
- Sony Corporation
- Hiroaki Ammo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an SOI transistor
- Patent number 5,786,258
- Issue date Jul 28, 1998
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an SOI transistor
- Patent number 5,783,472
- Issue date Jul 21, 1998
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for making bipolar device
- Patent number 5,643,806
- Issue date Jul 1, 1997
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for SOI transistor
- Patent number 5,629,217
- Issue date May 13, 1997
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating BiCMOS devices including passive devices
- Patent number 5,622,887
- Issue date Apr 22, 1997
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making SOI Transistor
- Patent number 5,580,797
- Issue date Dec 3, 1996
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for SOI transistor
- Patent number 5,548,156
- Issue date Aug 20, 1996
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making bipolar transistor having double polysilicon stru...
- Patent number 5,541,124
- Issue date Jul 30, 1996
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and process for fabricating the same
- Patent number 5,414,291
- Issue date May 9, 1995
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a stacked semiconductor device wherein semiconduc...
- Patent number 5,391,503
- Issue date Feb 21, 1995
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making SOI type bipolar transistor
- Patent number 5,389,561
- Issue date Feb 14, 1995
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having enhanced impurity concentration profile
- Patent number 5,163,178
- Issue date Nov 10, 1992
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making bipolar transistor
- Patent number 5,010,026
- Issue date Apr 23, 1991
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 4,994,881
- Issue date Feb 19, 1991
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS

Takayuki Gomi

Person

Patents Grantslast 30 patents

Semiconductor device including high speed transistors and high volt...

Integrated injection logic semiconductor device and method of fabri...

Bipolar transistor device and method for manufacturing the same

Semiconductor device

Integrated injection logic semiconductor device

Method of making plurality of bipolar transistors

Method of manufacturing heterojunction bipolar device having Si.sub...

Heterojunction bipolar semiconductor device

Process of fabricating semiconductor device

Bipolar transistor device and method for manufacturing the same

Mesa bipolar transistor with sub base layer

Process of fabricating integrated heterojunction bipolar device and...

Manufacturing method for making bipolar device having double polysi...

Method of producing Si-Ge base heterojunction bipolar device

Method for forming embedded diffusion layers using an alignment mark

Method of making an SOI transistor

Method of making an SOI transistor

Manufacturing method for making bipolar device

Method and apparatus for SOI transistor

Process for fabricating BiCMOS devices including passive devices

Method of making SOI Transistor

Method and apparatus for SOI transistor

Method for making bipolar transistor having double polysilicon stru...

Semiconductor device and process for fabricating the same

Method of forming a stacked semiconductor device wherein semiconduc...

Method for making SOI type bipolar transistor

Semiconductor device having enhanced impurity concentration profile

Process for making bipolar transistor

Bipolar transistor