Weize XIONG

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuits with aligned (100) NMOS and (110) PMOS finFET s...
- Patent number 9,053,966
- Issue date Jun 9, 2015
- Texas Instruments Incorporated
- Weize W. Xiong
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET s...
- Patent number 8,872,220
- Issue date Oct 28, 2014
- Texas Instruments Incorporated
- Weize W. Xiong
- G11 - INFORMATION STORAGE
Information Patent Grant
SOI MuGFETs having single gate electrode level
- Patent number 8,581,317
- Issue date Nov 12, 2013
- Texas Instruments Incorporated
- Howard Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide method
- Patent number 8,470,707
- Issue date Jun 25, 2013
- Texas Instruments Incorporated
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET s...
- Patent number 8,410,519
- Issue date Apr 2, 2013
- Texas Instruments Incorporated
- Weize Xiong
- G11 - INFORMATION STORAGE
Information Patent Grant
CMOS integration method for optimal IO transistor VT
- Patent number 8,377,772
- Issue date Feb 19, 2013
- Texas Instruments Incorporated
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming integrated circuits with aligned (100) NMOS and...
- Patent number 8,138,035
- Issue date Mar 20, 2012
- Texas Instruments Incorporated
- Weize Xiong
- G11 - INFORMATION STORAGE
Information Patent Grant
Disposable spacer integration with stress memorization technique an...
- Patent number 8,114,727
- Issue date Feb 14, 2012
- Texas Instruments Incorporated
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with memory cell including MuGFET and FIN capacitor
- Patent number 8,067,792
- Issue date Nov 29, 2011
- Texas Instruments Incorporated
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to eliminate re-crystallization border defects generated dur...
- Patent number 8,043,947
- Issue date Oct 25, 2011
- Texas Instruments Incorporated
- Angelo Pinto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-gate MOSFET device and associated manufacturing methods
- Patent number 7,960,234
- Issue date Jun 14, 2011
- Texas Instruments Incorporated
- Craig Henry Huffman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of adjusting FDSOI threshold voltage through oxide charges g...
- Patent number 7,939,393
- Issue date May 10, 2011
- Texas Instruments Incorporated
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making (100) NMOS and (110) PMOS sidewall surface on the...
- Patent number 7,897,994
- Issue date Mar 1, 2011
- Texas Instruments Incorporated
- Weize Xiong
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with memory cell including MuGFET and fin capacitor
- Patent number 7,683,417
- Issue date Mar 23, 2010
- Texas Instruments Incorporated
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating high performance and low power multi-gate devices
- Patent number 7,638,843
- Issue date Dec 29, 2009
- Texas Instruments Incorporated
- Weize W. Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gates for mugfet device
- Patent number 7,582,521
- Issue date Sep 1, 2009
- Texas Instruments Incorporated
- Husam Niman Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short channel semiconductor device fabrication
- Patent number 7,253,043
- Issue date Aug 7, 2007
- Texas Instruments Incorporated
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for integrating low schottky barrier metal source...
- Patent number 7,238,567
- Issue date Jul 3, 2007
- Texas Instruments Incorporated
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode for FinFET device
- Patent number 7,094,650
- Issue date Aug 22, 2006
- Infineon Technologies AG
- Nirmal Chaudhary
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUITS WITH ALIGNED (100) NMOS AND (110) PMOS FINFET S...
- Publication number 20150014789
- Publication date Jan 15, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Weize W. Xiong
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUITS WITH ALIGNED (100) NMOS AND (110) PMOS FINFET S...
- Publication number 20140035057
- Publication date Feb 6, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Weize W. Xiong
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM STRUCTURE AND PROCESS WITH IMPROVED STABILITY
- Publication number 20120280324
- Publication date Nov 8, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH ALIGNED (100) NMOS AND (110) PMOS FINFET S...
- Publication number 20120175710
- Publication date Jul 12, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Weize Xiong
- G11 - INFORMATION STORAGE
Information Patent Application
BIAS VOLTAGE SOURCE
- Publication number 20120119824
- Publication date May 17, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Anand Seshadri
- G11 - INFORMATION STORAGE
Information Patent Application
IMPROVED SILICIDE METHOD
- Publication number 20120108027
- Publication date May 3, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS INTEGRATION METHOD FOR OPTIMAL IO TRANSISTOR VT
- Publication number 20120045874
- Publication date Feb 23, 2012
- Weize XIONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Method to Improve Performance by Enhancing Poly Gate Doping C...
- Publication number 20110306170
- Publication date Dec 15, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Xin WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING INTEGRATED CIRCUITS WITH ALIGNED (100) NMOS AND...
- Publication number 20110151651
- Publication date Jun 23, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Weize Xiong
- G11 - INFORMATION STORAGE
Information Patent Application
Disposable Spacer Integration with Stress Memorization Technique an...
- Publication number 20110070703
- Publication date Mar 24, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI MUGFETS HAVING SINGLE GATE ELECTRODE LEVEL
- Publication number 20100052025
- Publication date Mar 4, 2010
- Texas Instruments Inc.
- Howard Lee Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device with Memory Cell Including MuGFET and FIN Capacitor
- Publication number 20100002494
- Publication date Jan 7, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ADJUSTING FDSOI THRESHOLD VOLTAGE THROUGH OXIDE CHARGES G...
- Publication number 20090253253
- Publication date Oct 8, 2009
- Weize XIONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO ELIMINATE RE-CRYSTALLIZATION BORDER DEFECTS GENERATED DUR...
- Publication number 20090130817
- Publication date May 21, 2009
- Angelo Pinto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH MEMORY CELL INCLUDING MUGFET AND FIN CAPACITOR
- Publication number 20090108316
- Publication date Apr 30, 2009
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM CMOS CIRCUITS WITH SUB 50NM STI STRUCTURES USING SEL...
- Publication number 20090096055
- Publication date Apr 16, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Clint L. Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Form CMOS Circuits Using Optimized Sidewalls
- Publication number 20090098702
- Publication date Apr 16, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING (100) NMOS AND (110) PMOS SIDEWALL SURFACE ON THE...
- Publication number 20080308847
- Publication date Dec 18, 2008
- Weize XIONG
- G11 - INFORMATION STORAGE
Information Patent Application
VARYING MUGFET WIDTH TO ADJUST DEVICE CHARACTERISTICS
- Publication number 20080303095
- Publication date Dec 11, 2008
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING STRAIN ENGINEERING TO MAXIMIZE SYSTEM-ON-A-CHIP PERFORM...
- Publication number 20080290414
- Publication date Nov 27, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL GATES FOR MUGFET DEVICE
- Publication number 20080272433
- Publication date Nov 6, 2008
- Husam Niman Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple-gate MOSFET device and associated manufacturing methods
- Publication number 20080233697
- Publication date Sep 25, 2008
- Texas Instruments Inc.
- Craig Henry Huffman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making planar nanowire surround gate mosfet
- Publication number 20080014689
- Publication date Jan 17, 2008
- TEXAS INSTRUMENTS INCORPORATED
- C. Rinn Cleavelin
- B82 - NANO-TECHNOLOGY
Information Patent Application
INTEGRATING HIGH PERFORMANCE AND LOW POWER MULTI-GATE DEVICES
- Publication number 20070259501
- Publication date Nov 8, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Weize W. Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING HIGH PERFORMANCE AND LOW POWER MULTI-GATE DEVICES
- Publication number 20070257319
- Publication date Nov 8, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Weize W. Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxide semiconductor (MOS) device having both an accumulation...
- Publication number 20060286759
- Publication date Dec 21, 2006
- Texas Instruments, Inc.
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Short channel semiconductor device fabrication
- Publication number 20060281268
- Publication date Dec 14, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE FOR FINFET DEVICE
- Publication number 20060160312
- Publication date Jul 20, 2006
- Nirmal Chaudhary
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and method for integrating low schottky barrier metal source...
- Publication number 20060040430
- Publication date Feb 23, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS

Weize XIONG

Person

Patents Grantslast 30 patents

Integrated circuits with aligned (100) NMOS and (110) PMOS finFET s...

Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET s...

SOI MuGFETs having single gate electrode level

Silicide method

Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET s...

CMOS integration method for optimal IO transistor VT

Method for forming integrated circuits with aligned (100) NMOS and...

Disposable spacer integration with stress memorization technique an...

Memory device with memory cell including MuGFET and FIN capacitor

Method to eliminate re-crystallization border defects generated dur...

Multiple-gate MOSFET device and associated manufacturing methods

Method of adjusting FDSOI threshold voltage through oxide charges g...

Method of making (100) NMOS and (110) PMOS sidewall surface on the...

Memory device with memory cell including MuGFET and fin capacitor

Integrating high performance and low power multi-gate devices

Dual metal gates for mugfet device

Short channel semiconductor device fabrication

System and method for integrating low schottky barrier metal source...

Gate electrode for FinFET device

Patents Applicationslast 30 patents

INTEGRATED CIRCUITS WITH ALIGNED (100) NMOS AND (110) PMOS FINFET S...

INTEGRATED CIRCUITS WITH ALIGNED (100) NMOS AND (110) PMOS FINFET S...

SRAM STRUCTURE AND PROCESS WITH IMPROVED STABILITY

INTEGRATED CIRCUITS WITH ALIGNED (100) NMOS AND (110) PMOS FINFET S...

BIAS VOLTAGE SOURCE

IMPROVED SILICIDE METHOD

CMOS INTEGRATION METHOD FOR OPTIMAL IO TRANSISTOR VT

Novel Method to Improve Performance by Enhancing Poly Gate Doping C...

METHOD FOR FORMING INTEGRATED CIRCUITS WITH ALIGNED (100) NMOS AND...

Disposable Spacer Integration with Stress Memorization Technique an...

SOI MUGFETS HAVING SINGLE GATE ELECTRODE LEVEL

Memory Device with Memory Cell Including MuGFET and FIN Capacitor

METHOD OF ADJUSTING FDSOI THRESHOLD VOLTAGE THROUGH OXIDE CHARGES G...

METHOD TO ELIMINATE RE-CRYSTALLIZATION BORDER DEFECTS GENERATED DUR...

MEMORY DEVICE WITH MEMORY CELL INCLUDING MUGFET AND FIN CAPACITOR

METHOD TO FORM CMOS CIRCUITS WITH SUB 50NM STI STRUCTURES USING SEL...

Method to Form CMOS Circuits Using Optimized Sidewalls

METHOD OF MAKING (100) NMOS AND (110) PMOS SIDEWALL SURFACE ON THE...

VARYING MUGFET WIDTH TO ADJUST DEVICE CHARACTERISTICS

INTEGRATING STRAIN ENGINEERING TO MAXIMIZE SYSTEM-ON-A-CHIP PERFORM...

DUAL METAL GATES FOR MUGFET DEVICE

Multiple-gate MOSFET device and associated manufacturing methods

Method for making planar nanowire surround gate mosfet

INTEGRATING HIGH PERFORMANCE AND LOW POWER MULTI-GATE DEVICES

INTEGRATING HIGH PERFORMANCE AND LOW POWER MULTI-GATE DEVICES

Metal oxide semiconductor (MOS) device having both an accumulation...

Short channel semiconductor device fabrication

GATE ELECTRODE FOR FINFET DEVICE

System and method for integrating low schottky barrier metal source...