Yasuo NAMIKAWA

Person

Itami-shi, Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
GaAs crystal
- Patent number 10,829,867
- Issue date Nov 10, 2020
- Sumitomo Electric Industries, Ltd.
- Keisuke Tanizaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaAs crystal
- Patent number 10,301,744
- Issue date May 28, 2019
- Sumitomo Electric Industries, Ltd.
- Keisuke Tanizaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Lateral junction field-effect transistor
- Patent number 8,921,903
- Issue date Dec 30, 2014
- Sumitomo Electric Industries, Ltd
- Takeyoshi Masuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor device and semiconductor device
- Patent number 8,697,555
- Issue date Apr 15, 2014
- Sumitomo Electric Industries, Ltd
- Kazuhiro Fujikawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,643,065
- Issue date Feb 4, 2014
- Sumitomo Electric Industries, Ltd
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 8,642,476
- Issue date Feb 4, 2014
- Sumitomo Electric Industries, Ltd
- Satomi Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting device
- Patent number 8,629,457
- Issue date Jan 14, 2014
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide substrate
- Patent number 8,435,866
- Issue date May 7, 2013
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing semiconductor substrate
- Patent number 8,168,515
- Issue date May 1, 2012
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate
- Patent number D655256
- Issue date Mar 6, 2012
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- D13 - Equipment for production, distribution, or transformation of energy
Information Patent Grant
Semiconductor substrate
- Patent number D651992
- Issue date Jan 10, 2012
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- D13 - Equipment for production, distribution, or transformation of energy
Information Patent Grant
Semiconductor substrate
- Patent number D651991
- Issue date Jan 10, 2012
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- D13 - Equipment for production, distribution, or transformation of energy
Information Patent Grant
Process of and apparatus for heat-treating II-VI compound semicondu...
- Patent number 6,881,658
- Issue date Apr 19, 2005
- Sumitomo Electric Industries, Ltd.
- Yasuo Namikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the heat treatment of a ZnSe crystal substrate, heat tre...
- Patent number 6,340,535
- Issue date Jan 22, 2002
- Sumitomo Electric Industries, Ltd.
- Yasuo Namikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing oxide crystal
- Patent number 5,851,956
- Issue date Dec 22, 1998
- Sumitomo Electric Industries, Ltd.
- Yasuo Namikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal manufacturing apparatus
- Patent number 5,846,323
- Issue date Dec 8, 1998
- International Superconductivity Technology Center, the Juridical Foundation
- Masahiro Egami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing an oxide crystal
- Patent number 5,707,441
- Issue date Jan 13, 1998
- Sumitomo Electric Industries, Ltd.
- Yasuo Namikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of retaining melt of oxide
- Patent number 5,632,811
- Issue date May 27, 1997
- Sumitomo Electric Industries, Ltd.
- Yasuo Namikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing oxide superconducting films by peritectic r...
- Patent number 4,994,437
- Issue date Feb 19, 1991
- Sumitomo Electric Industries, Ltd.
- Yasuko Torii
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES

Patents Applicationslast 30 patents

Information Patent Application
GaAs CRYSTAL
- Publication number 20190226119
- Publication date Jul 25, 2019
- Sumitomo Electric Industries, Ltd.
- Keisuke TANIZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaAs CRYSTAL
- Publication number 20170137967
- Publication date May 18, 2017
- Sumitomo Electric Industries, Ltd.
- Keisuke TANIZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SUBSTRATE HAVING SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE
- Publication number 20120273800
- Publication date Nov 1, 2012
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING COMBINED SUBSTRATE HAVING SILICON CARBIDE...
- Publication number 20120276715
- Publication date Nov 1, 2012
- Sumitomo Electric Industries Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS OF FABRICATING SILICON CARBIDE SEMICONDUCTOR D...
- Publication number 20120214309
- Publication date Aug 23, 2012
- Sumitomo Electric Industries, Ltd.
- Satomi Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20120208302
- Publication date Aug 16, 2012
- Sumitomo Electric Industries, Ltd.
- Satomi Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20120184113
- Publication date Jul 19, 2012
- Sumitomo Electric Industries, Ltd.
- Hiroki INOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20120161157
- Publication date Jun 28, 2012
- Sumitomo Electric Industries, Ltd.
- Hiroki Inoue
- C30 - CRYSTAL GROWTH
Information Patent Application
COMBINED SUBSTRATE HAVING SILICON CARBIDE SUBSTRATE
- Publication number 20120161158
- Publication date Jun 28, 2012
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANU...
- Publication number 20120126251
- Publication date May 24, 2012
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE, EPITAXIAL LAYER PROVIDED SUBSTRATE, SEMI...
- Publication number 20120119225
- Publication date May 17, 2012
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARB...
- Publication number 20120068195
- Publication date Mar 22, 2012
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING MET...
- Publication number 20120070605
- Publication date Mar 22, 2012
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE
- Publication number 20120061687
- Publication date Mar 15, 2012
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANU...
- Publication number 20120061686
- Publication date Mar 15, 2012
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120056202
- Publication date Mar 8, 2012
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C30 - CRYSTAL GROWTH
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20120056201
- Publication date Mar 8, 2012
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120056203
- Publication date Mar 8, 2012
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARB...
- Publication number 20120032191
- Publication date Feb 9, 2012
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARB...
- Publication number 20120025208
- Publication date Feb 2, 2012
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20120017826
- Publication date Jan 26, 2012
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE...
- Publication number 20120012862
- Publication date Jan 19, 2012
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
- Publication number 20120015499
- Publication date Jan 19, 2012
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20120009761
- Publication date Jan 12, 2012
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
- Publication number 20120003811
- Publication date Jan 5, 2012
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
- Publication number 20120003823
- Publication date Jan 5, 2012
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
- Publication number 20120003812
- Publication date Jan 5, 2012
- Sumitomo Electric Industries, Ltd.
- Makoto Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20110306181
- Publication date Dec 15, 2011
- SUMITOMO ELECTRIC INDUSTRIES ,LTD.
- Makoto Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20110284873
- Publication date Nov 24, 2011
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANU...
- Publication number 20110278594
- Publication date Nov 17, 2011
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH

Yasuo NAMIKAWA

Person

Patents Grantslast 30 patents

GaAs crystal

GaAs crystal

Lateral junction field-effect transistor

Method of producing semiconductor device and semiconductor device

Semiconductor device and method for manufacturing the same

Method for manufacturing silicon carbide semiconductor device

Light-emitting device

Method for manufacturing silicon carbide substrate

Method for manufacturing semiconductor substrate

Semiconductor substrate

Semiconductor substrate

Semiconductor substrate

Process of and apparatus for heat-treating II-VI compound semicondu...

Method for the heat treatment of a ZnSe crystal substrate, heat tre...

Method of manufacturing oxide crystal

Crystal manufacturing apparatus

Method for preparing an oxide crystal

Method of retaining melt of oxide

Method of manufacturing oxide superconducting films by peritectic r...

Patents Applicationslast 30 patents

GaAs CRYSTAL

GaAs CRYSTAL

COMPOSITE SUBSTRATE HAVING SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE

METHOD FOR MANUFACTURING COMBINED SUBSTRATE HAVING SILICON CARBIDE...

METHOD AND APPARATUS OF FABRICATING SILICON CARBIDE SEMICONDUCTOR D...

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

SILICON CARBIDE SUBSTRATE

COMBINED SUBSTRATE HAVING SILICON CARBIDE SUBSTRATE

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANU...

SILICON CARBIDE SUBSTRATE, EPITAXIAL LAYER PROVIDED SUBSTRATE, SEMI...

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARB...

SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING MET...

SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANU...

SEMICONDUCTOR DEVICE

INSULATED GATE BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARB...

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARB...

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE...

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE

SILICON CARBIDE SUBSTRATE

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANU...