METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

TECHNICAL FIELD

The present invention relates to a method for manufacturing a semiconductor substrate, in particular, a method for manufacturing a semiconductor substrate including a portion made of silicon carbide (SiC) having a single-crystal structure.

BACKGROUND ART

In recent years, SiC substrates have been adopted as semiconductor substrates for use in manufacturing semiconductor devices. SiC has a band gap larger than that of Si (silicon), which has been used more commonly. Hence, a semiconductor device employing a SiC substrate advantageously has a large reverse breakdown voltage, low on-resistance, or have properties less likely to decrease in a high temperature environment.

In order to efficiently manufacture such semiconductor devices, the substrates need to be large in size to some extent. According to U.S. Pat. No. 7,314,520 (Patent Document 1), a SiC substrate of 76 mm (3 inches) or greater can be manufactured.

Prior Art Documents
Patent Documents

Patent Document 1: U.S. Pat. No. 7,314,520

SUMMARY OF THE INVENTION
Problems to be Solved by the Invention

Industrially, the size of a SiC substrate is still limited to approximately 100 mm (4 inches). Accordingly, semiconductor devices cannot be efficiently manufactured using large substrates, disadvantageously. This disadvantage becomes particularly serious in the case of using a property of a plane other than the (0001) plane in SiC of hexagonal system. Hereinafter, this will be described.

A SiC substrate small in defect is usually manufactured by slicing a SiC ingot obtained by growth in the (0001) plane, which is less likely to cause stacking fault. Hence, a SiC substrate having a plane orientation other than the (0001) plane is obtained by slicing the ingot not in parallel with its grown surface. This makes it difficult to sufficiently secure the size of the substrate, or many portions in the ingot cannot be used effectively. For this reason, it is particularly difficult to effectively manufacture a semiconductor device that employs a plane other than the (0001) plane of SiC.

Instead of increasing the size of such a SiC substrate with difficulty, it is considered to use a semiconductor substrate having a supporting portion and a plurality of small SiC substrates disposed thereon. The size of this semiconductor substrate can be increased by increasing the number of SiC substrates as required.

However, in this semiconductor substrate, gaps are formed between adjacent SiC substrates. In the gaps, foreign matters are likely to be accumulated during a process of manufacturing a semiconductor device using the semiconductor substrate. An exemplary foreign matter is: a cleaning liquid or polishing agent used in the process of manufacturing a semiconductor device; or dust in the atmosphere. Such foreign matters result in decreased manufacturing yield, which leads to decreased efficiency of manufacturing semiconductor devices, disadvantageously.

The present invention is made in view of the foregoing problems and its object is to provide a method for manufacturing a large semiconductor substrate allowing for manufacturing of semiconductor devices with a high yield.

Means for Solving the Problems

A method according to the present invention for manufacturing a semiconductor substrate includes the following steps.

A supporting portion and first and second silicon carbide substrates are prepared. The first silicon carbide substrate has a first backside surface facing the supporting portion, a first front-side surface opposite to the first backside surface, and a first side surface connecting the first backside surface and the first front-side surface. The second silicon carbide substrate has a second backside surface facing the supporting portion, a second front-side surface opposite to the second backside surface, and a second side surface connecting the second backside surface and the second front-side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces is formed between the first side surface and the second side surface. There is provided a closing portion for closing the gap over the opening. A connecting portion for connecting the first and second side surfaces to each other is formed so as to close the opening, by depositing a sublimate from the first and second side surfaces onto the closing portion. The closing portion is removed after the step of forming the connecting portion.

According to the present manufacturing method, the opening of the gap between the first and second silicon carbide substrates is closed, thereby preventing accumulation of foreign matters in the gap upon manufacturing a semiconductor device using the semiconductor substrate. This prevents yield from being decreased by the foreign matters, thus obtaining a semiconductor substrate allowing for manufacturing of semiconductor devices with a high yield.

Preferably, the step of preparing the supporting portion and the first and second silicon carbide substrates is performed by preparing a combined substrate having the supporting portion and the first and second silicon carbide substrates, and each of the first and second backside surfaces of the combined substrate is connected to the supporting portion.

Preferably, the closing portion is formed on the first and second front-side surfaces to close the gap over the opening.

Preferably, the closing portion is made of carbon. This provides the closing portion with a heat resistance enough to endure a high temperature upon the formation of the connecting portion.

Preferably, the step of providing the closing portion includes the steps of: applying a fluid containing carbon element onto the first and second front-side surfaces; and carbonizing the fluid. Thus, the closing portion can be provided through readily implementable steps such as application and carbonization.

Preferably, the fluid is a liquid containing an organic substance. In this way, the fluid can be uniformly applied.

Preferably, the fluid is a suspension containing a carbon powder. Thus, the fluid can be readily carbonized by removing a liquid component of the suspension.

Preferably, the step of providing the closing portion is performed by forming a film on the first and second front-side surfaces. In this way, the closing portion is securely in contact with each of the first and second front-side surfaces, thereby more securely closing the opening between the first and second front-side surfaces.

Preferably, the step of providing the closing portion includes the steps of: preparing the closing portion; and disposing the closing portion on the first and second front-side surfaces after the step of preparing the closing portion. In this way, the closing portion can be provided readily by merely disposing the previously prepared closing portion.

Preferably, the method for manufacturing the semiconductor substrate further includes the step of connecting each of the first and second backside surfaces to the supporting portion. The step of connecting each of the first and second backside surfaces is performed simultaneously with the step of forming the connecting portion.

Preferably, the method for manufacturing the semiconductor substrate further includes the step of forming a protective film to cover the first and second front-side surfaces before the step of providing the closing portion. This prevents sublimation or resolidification from taking place on the first and second front-side surfaces, thereby preventing the first and second front-side surfaces from being rough.

Preferably, the step of forming the protective film includes the steps of: applying a fluid containing carbon element onto the first and second front-side surfaces; and carbonizing the fluid.

Preferably, the closing portion is made of carbon. Accordingly, the closing portion can be provided with a heat resistance enough to endure a high temperature upon the formation of the connecting portion.

Preferably, the closing portion is formed of a graphite sheet having flexibility. Thus, the closing portion can be deformed to close the gap more securely.

Preferably, the closing portion is made of silicon carbide. Accordingly, the closing portion can be provided with a heat resistance enough to endure a high temperature upon the formation of the connecting portion.

Preferably, the closing portion is made of a refractory metal. This allows the closing portion to be provided with a heat resistance enough to endure a high temperature upon the formation of the connecting portion.

Preferably, the supporting portion is made of silicon carbide. Thus, the supporting portion can be provided with properties close to those of the first and second silicon carbide substrates.

Preferably, the method for manufacturing the semiconductor substrate further includes the step of depositing the sublimate from the supporting portion onto the connecting portion in the gap having the opening closed by the connecting portion. Thus, the connecting portion can be thicker.

Preferably, the step of depositing the sublimate from the supporting portion onto the connecting portion is performed to bring, into the supporting portion, the whole of the gap having the opening closed by the connecting portion. Thus, the connecting portion can be thicker.

Preferably, in the step of forming the connecting portion, the closing portion is pressed toward the opening. Accordingly, the closing portion can be more securely close the gap over the opening.

Preferably, the method for manufacturing the semiconductor substrate further includes the step of polishing each of the first and second front-side surfaces. In this way, the first and second front-side surfaces constituting a surface of the semiconductor substrate can be flat, which leads to formation of a high-quality film on this flat surface of the semiconductor substrate.

Preferably, each of the first and second backside surfaces is a surface obtained through slicing. In other words, each of the first and second backside surfaces is a surface formed through slicing and not polished after the slicing. In this way, undulations are provided on each of the first and second backside surfaces. A space in a recess of the undulations can be used as a space in which a sublimation gas is spread in the case of providing the supporting portion on the first and second backside surfaces by means of the sublimation method.

Preferably, the step of forming the connecting portion is performed in an atmosphere having a pressure higher than 10⁻¹Pa and lower than 10⁴Pa.

EFFECTS OF THE INVENTION

As apparent from the description above, the present invention can provide a method for manufacturing a large semiconductor substrate allowing for manufacturing semiconductor devices with a high yield.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view schematically showing a configuration of a semiconductor substrate in a first embodiment of the present invention.

FIG. 2 is a schematic cross sectional view taken along a line II-II in FIG. 1.

FIG. 3 is a plan view schematically showing a first step of a method for manufacturing the semiconductor substrate in the first embodiment of the present invention.

FIG. 4 is a schematic cross sectional view taken along a line IV-IV in FIG. 3.

FIG. 5 is a cross sectional view schematically showing a second step of the method for manufacturing the semiconductor substrate in the first embodiment of the present invention.

FIG. 6 is a cross sectional view schematically showing a third step of the method for manufacturing the semiconductor substrate in the first embodiment of the present invention.

FIG. 7 is a partial cross sectional view schematically showing a fourth step of the method for manufacturing the semiconductor substrate in the first embodiment of the present invention.

FIG. 8 is a partial cross sectional view schematically showing a fifth step of the method for manufacturing the semiconductor substrate in the first embodiment of the present invention.

FIG. 9 is a cross sectional view schematically showing a sixth step of the method for manufacturing the semiconductor substrate in the first embodiment of the present invention.

FIG. 10 is a partial cross sectional view schematically showing a step of a method for manufacturing a semiconductor substrate in a comparative example.

FIG. 11 is a cross sectional view schematically showing a first step of a method for manufacturing a semiconductor substrate in a second embodiment of the present invention.

FIG. 12 is a cross sectional view schematically showing a second step of the method for manufacturing the semiconductor substrate in the second embodiment of the present invention.

FIG. 13 is a cross sectional view schematically showing a first step of a method for manufacturing a semiconductor substrate in a third embodiment of the present invention.

FIG. 14 is a cross sectional view schematically showing a second step of the method for manufacturing the semiconductor substrate in the third embodiment of the present invention.

FIG. 15 is a cross sectional view schematically showing a third step of the method for manufacturing the semiconductor substrate in the third embodiment of the present invention.

FIG. 16 is a cross sectional view schematically showing one step of a method for manufacturing a semiconductor substrate in a first variation of the third embodiment of the present invention.

FIG. 17 is a cross sectional view schematically showing one step of a method for manufacturing a semiconductor substrate in a second variation of the third embodiment of the present invention.

FIG. 18 is a cross sectional view schematically showing one step of a method for manufacturing a semiconductor substrate in a third variation of the third embodiment of the present invention.

FIG. 19 is a plan view schematically showing a configuration of a semiconductor substrate in a fourth embodiment of the present invention.

FIG. 20 is a schematic cross sectional view taken along a line XX-XX in FIG. 19.

FIG. 21 is a plan view schematically showing a configuration of a semiconductor substrate in a fifth embodiment of the present invention.

FIG. 22 is a schematic cross sectional view taken along a line XXII-XXII in FIG. 21.

FIG. 23 is a cross sectional view schematically showing one step of a method for manufacturing a semiconductor substrate in a sixth embodiment of the present invention.

FIG. 24 is a cross sectional view schematically showing a first step of a method for manufacturing the semiconductor substrate in a variation of the sixth embodiment of the present invention.

FIG. 25 is a cross sectional view schematically showing a second step of the method for manufacturing the semiconductor substrate in the variation of the sixth embodiment of the present invention.

FIG. 26 is a cross sectional view schematically showing a third step of the method for manufacturing the semiconductor substrate in the variation of the sixth embodiment of the present invention.

FIG. 27 is a partial cross sectional view schematically showing a configuration of a semiconductor device in a seventh embodiment of the present invention.

FIG. 28 is a schematic flowchart showing a method for manufacturing the semiconductor device in the seventh embodiment of the present invention.

FIG. 29 is a partial cross sectional view schematically showing a first step of the method for manufacturing the semiconductor device in the seventh embodiment of the present invention.

FIG. 30 is a partial cross sectional view schematically showing a second step of the method for manufacturing the semiconductor device in the seventh embodiment of the present invention.

FIG. 31 is a partial cross sectional view schematically showing a third step of the method for manufacturing the semiconductor device in the seventh embodiment of the present invention.

FIG. 32 is a partial cross sectional view schematically showing a fourth step of the method for manufacturing the semiconductor device in the seventh embodiment of the present invention.

FIG. 33 is a cross sectional view schematically showing one step of a method for manufacturing a semiconductor substrate in an eighth embodiment of the present invention.

MODES FOR CARRYING OUT THE INVENTION

The following describes an embodiment of the present invention with reference to figures.

First Embodiment

Referring to FIG. 1 and FIG. 2, a semiconductor substrate 80a of the present embodiment has a supporting portion 30 and a supported portion 10a supported by supporting portion 30. Supported portion 10a has SiC substrates 11-19 (silicon carbide substrates).

Supporting portion 30 connects the backside surfaces of SiC substrates 11-19 (surfaces opposite to the surfaces shown in FIG. 1) to one another, whereby SiC substrates 11-19 are fixed to one another. SiC substrates 11-19 respectively have exposed front-side surfaces on the same plane. For example, SiC substrates 11 and 12 respectively have first and second front-side surfaces F1, F2 (FIG. 2). Thus, semiconductor substrate 80a has a surface larger than the surface of each of SiC substrates 11-19. Hence, in the case of using semiconductor substrate 80a, semiconductor devices can be manufactured more effectively than in the case of using each of SiC substrates 11-19 solely.

Supporting portion 30 is preferably formed of a material capable of enduring a temperature of 1800° C. or greater, such as silicon carbide, carbon, or a refractory metal. An exemplary refractory metal is molybdenum, tantalum, tungsten, niobium, iridium, ruthenium, or zirconium. When silicon carbide is employed as the material of supporting portion 30 from among the materials exemplified above, supporting portion 30 has properties closer to those of SiC substrates 11-19.

In supported portion 10a, gaps VDa exist between SiC substrates 11-19. These gaps VDa are closed at their front-side surface sides (upper sides in FIG. 2) by connecting portions BDa. Each of connecting portions BDa has a portion located between first and second front-side surfaces F1, F2, whereby first and second front-side surfaces F1, F2 are connected to each other smoothly.

Next, a method for manufacturing semiconductor substrate 80a of the present embodiment will be described. For ease of description, only SiC substrates 11 and 12 of SiC substrates 11-19 may be explained, but the same explanation also applies to SiC substrates 13-19.

Referring to FIG. 3 and FIG. 4, a combined substrate 80P is prepared. Combined substrate 80P includes supporting portion 30 and a SiC substrate group 10.

SiC substrate group 10 includes SiC substrate 11 (first silicon carbide substrate) and SiC substrate 12 (second silicon carbide substrate). SiC substrate 11 has first backside surface B1 connected to supporting portion 30, first front-side surface F1 opposite to first backside surface B1, and a first side surface S1 connecting first backside surface B1 and first front-side surface F1. SiC substrate 12 (second silicon carbide substrate) has second backside surface B2 connected to supporting portion 30, second front-side surface F2 opposite to second backside surface B2, and a second side surface S2 connecting second backside surface B2 and second front-side surface F2. Second side surface S2 is disposed such that a gap GP having an opening CR between first and second front-side surfaces F1, F2 is formed between first side surface S1 and second side surface S2.

Referring to FIG. 5, onto first and second front-side surfaces F1, F2, a resist liquid 70P (fluid), which is a liquid containing an organic substance, is applied as a fluid containing carbon element. Here, opening CR is adapted to have a sufficiently small width in advance, and resist liquid 70P is adapted to have a sufficiently large viscosity. Accordingly, resist liquid 70P applied spans over opening CR and hardly comes into gap GP.

Now, referring to FIG. 6, resist liquid 70P is carbonized, thereby forming a cover 70 (closing portion) made of carbon. This carbonizing step is performed, for example, as follows.

First, resist liquid 70P applied (FIG. 5) is calcined for 10 seconds to 2 hours at 100-300° C. Accordingly, resist liquid 70P is hardened to form a resist layer.

Then, this resist layer is thermally treated to be carbonized, thereby forming cover 70 (FIG. 6). The thermal treatment is performed under conditions that the atmosphere is an inert gas or nitrogen gas with a pressure not more than an atmospheric pressure, the temperature is more than 300° C. and less than 1700° C., and the treatment time is more than one minute and less than 12 hours. If the temperature is equal to or smaller than 300° C., the carbonization is likely to be insufficient. On the other hand, if the temperature is equal to or greater than 1700° C., the front-side surfaces of SiC substrates 11 and 12 are likely to be deteriorated. Further, if the treatment time is equal to or shorter than one minute, the carbonization of the resist layer is likely to be insufficient. Hence, a longer treatment time is preferable. However, a sufficient treatment time is of less than 12 hours at maximum.

Resist liquid 70P is carbonized as described above to form cover 70. Cover 70 thus formed closes gap GP over opening CR.

In addition, it is preferable to adjust the thickness of resist liquid 70P such that cover 70 will have a thickness of more than 0.1 μm and less than 1 mm. If the thickness thereof is 0.1 μm or smaller, cover 70 may be discontinuous over opening CR. On the other hand, if the thickness of cover 70 is 1 mm or greater, it takes a long time to remove cover 70.

Next, combined substrate 80P (FIG. 6) thus having cover 70 formed thereon as described above is heated up to a temperature at which silicon carbide can sublime. This heating is performed to cause a temperature gradient in a direction of thickness of the SiC substrate group such that a cover side ICt of SiC substrate group 10, i.e., side facing cover 70, has a temperature lower than the temperature of a support side ICb of SiC substrate group 10, i.e., side facing supporting portion 30. Such a temperature gradient is attained by, for example, heating it to render the temperature of cover 70 lower than that of supporting portion 30.

Referring to FIG. 7, as indicated by an arrow in the figure, this heating causes sublimation involving mass transfer from a relatively high temperature region close to support side ICb to a relatively low temperature region close to cover side ICt at the surfaces of SiC substrates 11 and 12 in the closed gap GP, i.e., at first and second side surfaces S1, S2. As a result of the mass transfer, in gap GP closed by cover 70, sublimates from first and second side surfaces S1, S2 are deposited on cover 70.

Further, referring to FIG. 8, as a result of the deposition, connecting portion BDa is formed to close opening CR of gap GP (FIG. 7) and accordingly connect first and second side surfaces S1, S2 to each other. As a result, gap GP (FIG. 7) is formed into a gap VDa (FIG. 8) closed by connecting portion BDa.

Preferably, atmosphere in the processing chamber upon the formation of connecting portion BDa is obtained by reducing pressure of atmospheric air. The pressure of the atmosphere is preferably higher than 10⁻¹Pa and is lower than 10⁴Pa.

The atmosphere may be an inert gas atmosphere. An exemplary inert gas usable is a noble gas such as He or Ar; a nitrogen gas; or a mixed gas of the noble gas and nitrogen gas. When using the mixed gas, a ratio of the nitrogen gas is, for example, 60%. Further, the pressure in the processing chamber is preferably 50 kPa or smaller, and is more preferably 10 kPa or smaller.

It should be noted that an experiment was conducted to review heating temperatures. It was found that at 1600° C., connecting portion BDa was not sufficiently formed, and at 3000° C., SiC substrates 11, 12 were damaged, disadvantageously. However, these disadvantages were not found at 1800° C., 2000° C., and 2500° C.

In addition, with the heating temperature being fixed to 2000° C., pressures upon the heating were reviewed. As a result, at 100 kPa, connecting portion BDa was not formed, and at 50 kPa, connecting portion BDa was less likely to be formed, disadvantageously. However, these disadvantages were not found at 10 kPa, 100 Pa, 1 Pa, 0.1 Pa, and 0.0001 Pa.

Referring to FIG. 9, after connecting portion BDa is formed, cover 70 is removed. Cover 70 can be removed readily by oxidizing carbon in cover 70 into gas, i.e., by ashing. It should be noted that cover 70 may be removed by grinding.

The following describes a comparative example (FIG. 10) in which cover 70 does not exist in the step shown in FIG. 7. In this case, because there is no cover 70 for blocking the flow of the gas sublimated from first and second side surfaces S1 and S2, the gas is likely to get out of gap GP. Accordingly, connecting portion BDa (FIG. 8) is less likely to be formed. Hence, opening CR is less likely to be closed.

According to the present embodiment, as shown in FIG. 2, SiC substrates 11 and 12 are combined as one semiconductor substrate 80a through supporting portion 30. Semiconductor substrate 80a includes respective first and second front-side surfaces F1, F2 of the SiC substrates, as its substrate surface on which a semiconductor device such as a transistor is to be formed. In other words, semiconductor substrate 80a has a larger substrate surface than in the case where any of SiC substrates 11 and 12 is solely used. Thus, semiconductor substrate 80a allows semiconductor devices to be manufactured efficiently.

Further, in the process of manufacturing semiconductor substrate 80a, opening CR between first and second front-side surfaces F1, F2 of combined substrate 80P (FIG. 4) is closed by connecting portion BDa (FIG. 2). Accordingly, first and second front-side surfaces F1, F2 are connected to each other smoothly. As such, in the process of manufacturing a semiconductor device using semiconductor substrate 80a, foreign matters, which would cause decreased yield, are less likely to be accumulated between first and second front-side surfaces F1, F2. Thus, the use of semiconductor substrate 80a allows semiconductor devices to be manufactured with a high yield.

Further, since cover 70 is formed of carbon, cover 70 is provided with a heat resistance enough to endure a high temperature upon the formation of connecting portion BDa (FIG. 8).

Further, the formation of cover 70 can be done with the readily implementable processes such as the application of resist liquid 70P (FIG. 5) and the carbonization (FIG. 6). Furthermore, resist liquid 70P is a liquid and is therefore uniformly applied readily.

The following describes a variation of the present embodiment. In this variation, instead of resist liquid 70P (FIG. 5), an adhesive agent is used as the fluid applied to form cover 70 (FIG. 6). This adhesive agent is a suspension (carbon adhesive agent) containing carbon powders.

The carbon adhesive agent applied is calcined at 50° C.-400° C. for 10 seconds to 12 hours. Accordingly, the carbon adhesive agent is hardened to form an adhesive layer.

Then, this adhesive layer is thermally treated to be carbonized, thereby forming cover 70. The thermal treatment is performed under conditions that the atmosphere is an inert gas or nitrogen gas with a pressure not more than the atmospheric pressure, the temperature is more than 300° C. and less than 2500° C., and the treatment time is more than one minute and less than 12 hours. If the temperature is equal to or smaller than 300° C., the carbonization is likely to be insufficient. On the other hand, if the temperature is equal to or greater than 2500° C., the front-side surfaces of SiC substrates 11 and 12 are likely to be deteriorated. Further, if the treatment time is equal to or shorter than one minute, the carbonization of the adhesive layer is likely to be insufficient. Hence, a longer treatment time is preferable. However, a sufficient treatment time is of less than 12 hours, at maximum. Thereafter, steps similar to the above-described steps in the present embodiment are performed.

According to this variation, since cover 70 is formed from the suspension containing the carbon powders, cover 70 can be carbonized more securely. In other words, the material of cover 70 can be formed into carbon, more securely.

Second Embodiment

As a method for manufacturing a semiconductor substrate in the present embodiment, combined substrate 80P (FIG. 3, FIG. 4) is prepared as with the first embodiment.

Referring to FIG. 11 mainly, carbon is deposited on first and second front-side surfaces F1, F2 by means of a sputtering method. Accordingly, a cover 71 (closing portion) is formed instead of cover 70 (FIG. 6).

Cover 71 preferably has a thickness of more than 0.1 μm and less than 1 mm. If the thickness thereof is 0.1 μm or smaller, cover 71 may be discontinuous over opening CR. On the other hand, if cover 71 has a thickness of 1 mm or greater, it takes a long time to remove cover 71.

Furthermore, referring to FIG. 12, through steps similar to those in the first embodiment (FIG. 7 and FIG. 8), gap GP is formed into gap VDa closed by connecting portion BDa. Next, cover 71 is removed, thus obtaining semiconductor substrate 80a (FIG. 2).

According to the present embodiment, cover 71 made of carbon is formed without carbonization. Hence, the material of cover 71 is surely carbon.

Further, cover 71 is formed by depositing the substance onto first and second front-side surfaces F1, F2. Hence, cover 71 is securely in contact with each of first and second surfaces F1, F2. Accordingly, opening CR between first and second front-side surfaces F1, F2 can be closed more securely.

The following describes a first variation of the present embodiment. In this variation, as cover 71 (FIG. 11), a carbon plate prepared in advance is disposed on first and second front-side surfaces F1, F2 to span over opening CR. According to this variation, the step of providing cover 71 and the step of removing cover 71 after the formation of connecting portion BDa (FIG. 12) can be performed readily.

The following describes a second variation of the present embodiment. In this variation, instead of disposing the carbon plate as described above, a metal plate made of a refractory metal is disposed. As the refractory metal, a metal having a melting point of 1800° C. or greater is preferable. An exemplary refractory metal usable is molybdenum, tantalum, tungsten, niobium, iridium, ruthenium, or zirconium. In this variation, cover 71 is thus made of the refractory metal, so cover 71 can be provided with a heat resistance enough to endure the high temperature upon the formation of connecting portion BDa.

It should be noted that in the first and second variations, instead of preparing combined substrate 80P, there may be prepared supporting portion 30 and SiC substrates 11 and 12 not connected to supporting portion 30. In this case, at the same time as the formation of connecting portion BDa at the high temperature, first and second backside surfaces B1, B2 are connected to supporting portion 30.

The following describes a third variation of the present embodiment. In this variation, instead of depositing carbon as described above, SiC is deposited. As a deposition method, the CVD method can be used, for example. According to this variation, cover 71 is thus made of SiC, so cover 71 can be provided with a heat resistance enough to endure the high temperature upon the formation of connecting portion BDa.

The following describes a fourth variation of the present embodiment. In this variation, instead of depositing carbon as described above, a refractory metal similar to that of the third variation is deposited. As a deposition method, the sputtering method can be used, for example.

Third Embodiment

In the present embodiment, the following fully describes a particular case where supporting portion 30 is made of silicon carbide in the method for manufacturing combined substrate 80P (FIG. 3, FIG. 4) used in the first embodiment. For ease of description, only SiC substrates 11 and 12 of SiC substrates 11-19 (FIG. 3, FIG. 4) may be explained, but the same explanation also applies to SiC substrates 13-19.

Referring to FIG. 13, SiC substrates 11 and 12 are prepared each of which has a single-crystal structure. Specifically, for example, SiC substrates 11 and 12 are prepared by cutting, along the (03-38) plane, a SiC ingot grown in the (0001) plane in the hexagonal system. Preferably, each of backside surfaces B1 and B2 has a roughness Ra of not more than 100 μm.

Next, SiC substrates 11 and 12 are placed on a first heating member 81 in the processing chamber with each of backside surfaces B1 and B2 being exposed in one direction (upward in FIG. 13). Namely, when viewed in a plan view, SiC substrates 11 and 12 are arranged side by side.

Preferably, this arrangement is accomplished by disposing backside surfaces B1 and B2 on the same flat plane or by disposing first and second front-side surfaces F1, F2 on the same flat plane.

Further, a minimum space between SiC substrates 11 and 12 (minimum space in a lateral direction in FIG. 13) is preferably 5 mm or smaller, more preferably, 1 mm or smaller, and further preferably 100 μm or smaller, and particularly preferably 10 μm or smaller. Specifically, for example, the substrates, which have the same rectangular shape, may be arranged in the form of a matrix with a space of 1 mm or smaller therebetween.

Next, supporting portion 30 (FIG. 2) is formed to connect backside surfaces B1 and B2 to each other in the following manner.

First, each of backside surfaces B1 and B2 exposed in the one direction (upward in FIG. 13) and a surface SS of a solid source material 20 disposed in the one direction (upward in FIG. 13) relative to backside surfaces B1 and B2 are arranged face to face with a space D1 provided therebetween. Preferably, space D1 has an average value of not less than 1 μm and not more than 1 cm.

Solid source material 20 is made of SiC, and is preferably a piece of solid matter of silicon carbide, specifically, a SiC wafer, for example. Solid source material 20 is not particularly limited in crystal structure of SiC. Further, surface SS of solid source material 20 preferably has a roughness Ra of 1 mm or smaller.

In order to provide space D1 (FIG. 13) more securely, there may be used spacers 83 (FIG. 16) each having a height corresponding to space D1. This method is particularly effective when the average value of space D1 is approximately 100 μm.

Next, SiC substrates 11 and 12 are heated by first heating member 81 to a predetermined substrate temperature. On the other hand, solid source material 20 is heated by a second heating member 82 to a predetermined source material temperature. When solid source material 20 is thus heated to the source material temperature, SiC is sublimated at surface SS of the solid source material to generate a sublimate, i.e., gas. The gas thus generated is supplied onto backside surfaces B1 and B2 in the one direction (from upward in FIG. 13).

Preferably, the substrate temperature is set lower than the source material temperature, and is more preferably set so that a difference between the temperatures is 1° C. or greater and 100° C. or smaller. Further, the substrate temperature is preferably 1800° C. or greater and 2500° C. or smaller.

Referring to FIG. 14, the gas supplied as described above is solidified and accordingly recrystallized on each of backside surfaces B1 and B2. In this way, a supporting portion 30p is formed to connect backside surfaces B1 and B2 to each other. Further, solid source material 20 (FIG. 13) is consumed and is reduced in size to be a solid source material 20p.

Referring to FIG. 15 mainly, as the sublimation develops, solid source material 20p (FIG. 14) is run out. In this way, supporting portion 30 is formed to connect backside surfaces B1 and B2 to each other.

Upon the formation of supporting layer 30, the atmosphere in the processing chamber is preferably obtained by reducing the pressure of the atmospheric air. The pressure of the atmosphere is preferably higher than 10⁻¹Pa and is lower than 10⁴Pa.

The atmosphere described above may be an inert gas atmosphere. An exemplary inert gas usable is a noble gas such as He or Ar; a nitrogen gas; or a mixed gas of the noble gas and nitrogen gas. When using the mixed gas, a ratio of the nitrogen gas is, for example, 60%. Further, the pressure in the processing chamber is preferably 50 kPa or smaller, and is more preferably 10 kPa or smaller.

Further, supporting portion 30 preferably has a single-crystal structure. More preferably, supporting portion 30 on backside surface B1 has a crystal plane inclined by 10° or smaller relative to the crystal plane of backside surface B1, or supporting portion 30 on backside surface B2 has a crystal plane inclined by 10° relative to the crystal plane of backside surface B2. These angular relations can be readily realized by expitaxially growing supporting portion 30 on backside surfaces B1 and B2.

The crystal structure of each of SiC substrates 11, 12 is preferably of hexagonal system, and is more preferably 4H-SiC or 6H-SiC. Moreover, it is preferable that SiC substrates 11, 12 and supporting portion 30 be made of SiC single crystal having the same crystal structure.

Further, the concentration in each of SiC substrates 11 and 12 is preferably different from the impurity concentration of supporting portion 30. More preferably, supporting portion 30 has an impurity concentration higher than that of each of SiC substrates 11 and 12. It should be noted that the impurity concentration in each of SiC substrates 11, 12 is, for example, 5×10¹⁶cm⁻³or greater and 5×10¹⁹cm⁻³or smaller. Further, supporting portion 30 has an impurity concentration of, for example, 5×10¹⁶cm⁻³or greater and 5×10²¹cm⁻³or smaller. As the impurity, nitrogen or phosphorus can be used, for example.

Further, preferably, first front-side surface F1 has an off angle of 50° or greater and 65° or smaller relative to the {0001} plane of SiC substrate 11 and second front-side surface F2 has an off angle of 50° or greater and 65° or smaller relative to the {0001} plane of the SiC substrate.

More preferably, the off orientation of first front-side surface F1 forms an angle of 5° or smaller relative to the <1-100> direction of SiC substrate 11, and the off orientation of second front-side surface F2 forms an angle of 5° or smaller with the <1-100> direction of substrate 12.

Further, first front-side surface F1 preferably has an off angle of not less than −3° and not more than 5° relative to the {03-38} plane in the <1-100> direction of SiC substrate 11, and second front-side surface F2 preferably has an off angle of not less than −3° and not more than 5° relative to the {03-38} plane in the <1-100> direction of SiC substrate 12.

It should be noted that the “off angle of first front-side surface F1 relative to the {03-38} plane in the <1-100> direction” refers to an angle formed by an orthogonal projection of a normal line of first front-side surface F1 to a projection plane defined by the <1-100> direction and the <0001> direction, and a normal line of the {03-38} plane. The sign of positive value corresponds to a case where the orthogonal projection approaches in parallel with the <1-100> direction whereas the sign of negative value corresponds to a case where the orthogonal projection approaches in parallel with the <0001> direction. This is similar in the “off angle of second front-side surface F2 relative to the {03-38} plane in the <1-100> direction”.

Further, the off orientation of first front-side surface F1 forms an angle of 5° or smaller with the <11-20> direction of substrate 11. The off orientation of second front-side surface F2 forms an angle of 5° or smaller with the <11-20> direction of substrate 12.

According to the present embodiment, since supporting portion 30 formed on backside surfaces B1 and B2 is also made of SiC as with SiC substrates 11 and 12, physical properties of the SiC substrates and supporting portion 30 are close to one another. Accordingly, warpage or cracks of combined substrate 80P (FIG. 3, FIG. 4) or semiconductor substrate 80a (FIG. 1, FIG. 2) resulting from a difference in physical property therebetween can be suppressed.

Further, utilization of the sublimation method allows supporting portion 30 to be formed fast with high quality. When the sublimation method thus utilized is a close-spaced sublimation method, supporting portion 30 can be formed more uniformly.

Further, when the average value of space D1 (FIG. 13) between each of backside surfaces B1 and B2 and the surface of solid source material 20 is 1 cm or smaller, distribution in film thickness of supporting portion 30 can be reduced. So far as the average value of space D1 is 1 μm or greater, a space for sublimation of SiC can be sufficiently secured.

Meanwhile, in the step of forming supporting portion 30 (FIG. 7), the temperatures of SiC substrates 11 and 12 are set lower than that of solid source material 20 (FIG. 13). This allows the sublimated SiC to be efficiently solidified on SiC substrates 11 and 12.

Further, the step of placing SiC substrates 11 and 12 is preferably performed to allow the minimum space between SiC substrates 11 and 12 to be 1 mm or smaller. Accordingly, supporting portion 30 can be formed to connect backside surface B1 of SiC substrate 11 and backside surface B2 of SiC substrate 12 to each other more securely.

Further, supporting portion 30 preferably has a single-crystal structure. Accordingly, supporting portion 30 has physical properties close to the physical properties of SiC substrates 11 and 12 each having a single-crystal structure.

More preferably, supporting portion 30 on backside surface B1 has a crystal plane inclined by 10° or smaller relative to that of backside surface B1. Further, supporting portion 30 on backside surface B2 has a crystal plane inclined by 10° or smaller relative to that of backside surface B2. Accordingly, supporting portion 30 has anisotropy close to that of each of SiC substrates 11 and 12.

Further, preferably, each of SiC substrates 11 and 12 has an impurity concentration different from that of supporting portion 30. Accordingly, there can be obtained semiconductor substrate 80a (FIG. 2) having a structure of two layers with different impurity concentrations.

Furthermore, the impurity concentration in supporting portion 30 is preferably higher than the impurity concentration in each of SiC substrates 11 and 12. This allows the resistivity of supporting portion 30 to be smaller than those of SiC substrates 11 and 12. Accordingly, there can be obtained semiconductor substrate 80a suitable for manufacturing of a semiconductor device in which a current flows in the thickness direction of supporting portion 30, i.e., a semiconductor device of vertical type.

Meanwhile, preferably, first front-side surface F1 has an off angle of not less than 50° and not more than 65° relative to the {0001} plane of SiC substrate 11 and second front-side surface F2 has an off angle of not less than 50° and not more than 65° relative to the {0001} plane of SiC substrate 12. This achieves further improved channel mobility in each of first and second front-side surfaces F1, F2, as compared with a case where each of first and second front-side surfaces F1, F2 corresponds to the {0001} plane.

More preferably, the off orientation of first front-side surface F1 forms an angle of not more than 5° with the <1-100> direction of SiC substrate 11, and the off orientation of second front-side surface F2 forms an angle of not more than 5° with the <1-100> direction of SiC substrate 12. This achieves further improved channel mobility in each of first and second front-side surfaces F1, F2.

Further, preferably, the off orientation of first front-side surface F1 forms an angle of not more than 5° with the <11-20> direction of SiC substrate 11, and the off orientation of second front-side surface F2 forms an angle of not more than 5° with the <11-20> direction of SiC substrate 12. This achieves further improved channel mobility in each of first and second front-side surfaces F1, F2, as compared with a case where each of first and second front-side surfaces F1, F2 corresponds to the {0001} plane.

In the description above, the SiC wafer is exemplified as solid source material 20, but solid source material 20 is not limited to this and may be a SiC powder or a SiC sintered compact, for example.

Further, as first and second heating members 81, 82, any heating members can be used as long as they are capable of heating a target object. For example, the heating members can be of resistive heating type employing a graphite heater, or of inductive heating type.

Meanwhile, in FIG. 13, the space is provided between each of backside surfaces B1 and B2 and surface SS of solid source material 20 to extend therealong entirely. However, a space may be provided between each of backside surfaces B1 and B2 and surface SS of solid source material 20 while each of backside surface B1 and B2 and surface SS of solid source material 20 are partially in contact with each other. The following describes two variations corresponding to this case.

Referring to FIG. 17, in this variation, the space is secured by warpage of the SiC wafer serving as solid source material 20. More specifically, in the present variation, there is provided a space D2 that is locally zero but surely has an average value exceeding zero. Further, as with the average value of space D1, space D2 preferably has an average value of not less than 1 μm and not more than 1 cm.

Referring to FIG. 18, in this variation, the space is secured by warpage of each of SiC substrates 11-13. More specifically, in the present variation, there is provided a space D3 that is locally zero but surely has an average value exceeding zero. Further, as with the average value of space D1, space D3 preferably has an average value of not less than 1 μm and not more than 1 cm.

In addition, the space may be secured by combination of the respective methods shown in FIG. 17 and FIG. 18, i.e., by both the warpage of the SiC wafer serving as solid source material 20 and the warpage of each of SiC substrates 11-13.

Each of the above-described methods shown in FIG. 17 and FIG. 18 or the combination of these methods is particularly effective when the average value of the space is not more than 100 μm.

Fourth Embodiment

Referring to FIG. 19 and FIG. 20, a semiconductor substrate 80b of the present embodiment has gaps VDb closed by connecting portions BDb, instead of gaps VDa (FIG. 2: the first embodiment) closed by connecting portions BDa.

The following describes a method for manufacturing semiconductor substrate 80b.

First, by the method described in the third embodiment, combined substrate 80P (FIG. 3, FIG. 4) having supporting portion 30 made of SiC is formed. Using combined substrate 80P thus formed, the steps are performed up to the step shown in FIG. 8, in accordance with the method described in the first embodiment.

In the present embodiment, supporting portion 30 is made of SiC, and even after each connecting portion BDa is formed as shown in FIG. 8, the mass transfer involved with the sublimation continues. As a result, sublimation also takes place from supporting portion 30 into closed gap VDa to a considerable extent. In other words, sublimates from supporting portion 30 are deposited onto connecting portion BDa. This brings a part of gap VDa located between SiC substrates 11 and 12 into supporting portion 30, thereby obtaining gap VDb (FIG. 20) closed by connecting portion BDb.

According to semiconductor substrate 80b (FIG. 20) of the present embodiment, there can be formed connecting portion BDb thicker than connecting portion BDa of semiconductor substrate 80a (FIG. 2).

Fifth Embodiment

Referring to FIG. 21 and FIG. 22, a semiconductor substrate 80c of the present embodiment has gaps VDc closed by connecting portions BDc instead of gaps VDb (FIG. 20: the fourth embodiment) closed by connecting portion BDb. Semiconductor substrate 80c is obtained using a method similar to that of the fourth embodiment, i.e., by bringing entire gaps VDa (FIG. 2) into supporting portion 30 through the locations of gaps VDb (FIG. 20).

According to the present embodiment, there can be formed each connecting portion BDc thicker than each connecting portion BDb of the fourth embodiment.

It should be noted that gap VDc may be brought to reach the side of the backside surfaces (lower side in FIG. 22) by causing the mass transfer resulting from the sublimation in each gap VDc while causing the side of the front-side surfaces of semiconductor substrate 80c (sides including first and second front-side surfaces F1, F2 of FIG. 22) to have a temperature lower than that of the side of the backside surfaces (lower side in FIG. 22). Accordingly, gap VDc thus closed serves as a recess at the side of the backside surfaces. This recess may be removed by polishing.

Sixth Embodiment

The following describes a method for manufacturing a semiconductor substrate in the present embodiment and a variation thereof. For ease of description, only SiC substrates 11 and 12 of SiC substrates 11-19 (FIG. 1) may be explained, but the same explanation also applies to SiC substrates 13-19.

Referring to FIG. 23, in the present embodiment, a graphite sheet 72 (closing portion) having flexibility is disposed on a first heating member 81. Next, in the processing chamber, SiC substrates 11 and 12 are placed over first heating member 81 with graphite sheet 72 therebetween such that each of backside surfaces B1 and B2 is exposed in one direction (upward in FIG. 23). Thereafter, steps similar to those in the third embodiment are performed.

Apart from the configuration described above, the configuration of the present embodiment is substantially the same as the configuration of the third embodiment. Hence, the same or corresponding elements are given the same reference characters and are not described repeatedly.

According to the present embodiment, upon forming supporting portion 30 in the same manner as in the third embodiment (FIG. 15), a connecting portion similar to connecting portion BDa formed on cover 70 (FIG. 8) in the first embodiment is formed on graphite sheet 72 (FIG. 23). Namely, the step of forming the connecting portion to close opening CR of gap GP (FIG. 7) and accordingly connect first and second side surfaces S1, S2 is performed at the same time as the step of connecting each of first and second backside surfaces B1, B2 to supporting portion 30 (FIG. 15). Hence, the steps are simplified as compared with a case of separately performing the step of forming the connecting portion and the step of connecting each of first and second backside surfaces B1, B2.

Further, since graphite sheet 72 has flexibility, graphite sheet 72 can close gap GP (FIG. 7) more securely.

The following describes the variation of the present embodiment.

Referring to FIG. 24, a resist liquid 40 similar to resist liquid 70P (FIG. 5) is applied onto front-side surface F1 of SiC substrate 11. Next, resist liquid 40 is carbonized using a method similar to the method by which resist liquid 70P (FIG. 5) is carbonized.

Referring to FIG. 25, by the carbonization, there is provided a protective film 41, which covers first front-side surface F1 of SiC substrate 11. Likewise, a protective film covering second front-side surface F2 of SiC substrate 12 is also formed.

Referring to FIG. 26, as with the present embodiment, SiC substrates 11 and 12 are disposed over first heating member 81 with graphite sheet 72 interposed therebetween. However, in this variation, at this point of disposing them, protective film 41 has been formed on first front-side surface F1 facing graphite sheet 72. Likewise, protective film 42 similar to protective film 41 is formed on second surface F2 facing graphite sheet 72.

In this variation, upon the formation of the connecting portion on graphite sheet 72, protective films 41 and 42 serve to prevent sublimation/resolidification from taking place on first and second front-side surfaces F1, F2. Accordingly, first and second front-side surfaces F1, F2 can be prevented from being rough.

Seventh Embodiment

Referring to FIG. 27, a semiconductor device 100 of the present embodiment is a DiMOSFET (Double Implanted Metal Oxide Semiconductor Field Effect Transistor) of vertical type, and has semiconductor substrate 80a, a buffer layer 121, a reverse breakdown voltage holding layer 122, p regions 123, n⁺ regions 124, p⁺ regions 125, an oxide film 126, source electrodes 111, upper source electrodes 127, a gate electrode 110, and a drain electrode 112.

In the present embodiment, semiconductor substrate 80a has n type conductivity, and has supporting portion 30 and SiC substrate 11 as described in the first embodiment. Drain electrode 112 is provided on supporting portion 30 to interpose supporting portion 30 between drain electrode 112 and SiC substrate 11. Buffer layer 121 is provided on SiC substrate 11 to interpose SiC substrate 11 between buffer layer 121 and supporting portion 30.

Buffer layer 121 has n type conductivity, and has a thickness of, for example, 0.5 μm. Further, impurity with n type conductivity in buffer layer 121 has a concentration of, for example, 5×10¹⁷cm⁻³.

Reverse breakdown voltage holding layer 122 is formed on buffer layer 121, and is made of silicon carbide with n type conductivity. For example, reverse breakdown voltage holding layer 122 has a thickness of 10 μm, and includes a conductive impurity of n type at a concentration of 5×10¹⁵cm⁻³.

Reverse breakdown voltage holding layer 122 has a surface in which the plurality of p regions 123 of p type conductivity are formed with spaces therebetween. In each of p regions 123, an n⁺ region 124 is formed at the surface layer of p region 123. Further, at a location adjacent to n⁺ region 124, a p⁺ region 125 is formed. Oxide film 126 is formed to extend on n⁺ region 124 in one p region 123, p region 123, an exposed portion of reverse breakdown voltage holding layer 122 between the two p regions 123, the other p region 123, and n⁺ region 124 in the other p region 123. On oxide film 126, gate electrode 110 is formed. Further, source electrodes 111 are formed on n⁺ regions 124 and p⁺ regions 125. On source electrodes 111, upper source electrodes 127 are formed.

The concentration of nitrogen atoms is not less than 1×10²¹cm⁻³in maximum value at a region of 10 nm or smaller from the interface between oxide film 126 and each of the semiconductor layers, i.e., n⁺ regions 124, p⁺ regions 125, p regions 123, and reverse breakdown voltage holding layer 122. This achieves improved mobility particularly in a channel region below oxide film 126 (a contact portion of each p region 123 with oxide film 126 between each of n⁺ regions 124 and reverse breakdown voltage holding layer 122).

The following describes a method for manufacturing semiconductor device 100. It should be noted that FIG. 29-FIG. 32 show steps only in the vicinity of SiC substrate 11 of SiC substrates 11-19 (FIG. 1), but the same steps are performed also in the vicinity of each of SiC substrates 12-19.

First, in a substrate preparing step (step S110: FIG. 28), semiconductor substrate 80a (FIG. 1 and FIG. 2) is prepared. Semiconductor substrate 80a has n type conductivity.

Referring to FIG. 29, in an epitaxial layer forming step (step S120: FIG. 28), buffer layer 121 and reverse breakdown voltage holding layer 122 are formed as follows.

First, buffer layer 121 is formed on SiC substrate 11 of semiconductor substrate 80a. Buffer layer 121 is made of silicon carbide of n type conductivity, and is an epitaxial layer having a thickness of 0.5 μm, for example. Buffer layer 121 has a conductive impurity at a concentration of, for example, 5×10¹⁷cm⁻³.

Next, reverse breakdown voltage holding layer 122 is formed on buffer layer 121. Specifically, a layer made of silicon carbide of n type conductivity is formed using an epitaxial growth method. Reverse breakdown voltage holding layer 122 has a thickness of, for example, 10 μm. Further, reverse breakdown voltage holding layer 122 includes an impurity of n type conductivity at a concentration of, for example, 5×10¹⁵cm⁻³.

Referring to FIG. 30, an implantation step (step S130: FIG. 28) is performed to form p regions 123, n⁺ regions 124, and p⁺ regions 125 as follows.

First, an impurity of p type conductivity is selectively implanted into portions of reverse breakdown voltage holding layer 122, thereby forming p regions 123. Then, a conductive impurity of n type is selectively implanted to predetermined regions to form n⁺ regions 124, and a conductive impurity of p type is selectively implanted into predetermined regions to form p⁺ regions 125. It should be noted that such selective implantation of the impurities is performed using a mask formed of, for example, an oxide film.

After such an implantation step, an activation annealing process is performed. For example, the annealing is performed in argon atmosphere at a heating temperature of 1700° C. for 30 minutes.

Referring to FIG. 31, a gate insulating film forming step (step S140: FIG. 28) is performed. Specifically, oxide film 126 is formed to cover reverse breakdown voltage holding layer 122, p regions 123, n⁺ regions 124, and p⁺ regions 125. Oxide film 126 may be formed through dry oxidation (thermal oxidation). Conditions for the dry oxidation are, for example, as follows: the heating temperature is 1200° C. and the heating time is 30 minutes.

Thereafter, a nitrogen annealing step (step S150) is performed. Specifically, annealing process is performed in nitrogen monoxide (NO) atmosphere. Conditions for this process are, for example, as follows: the heating temperature is 1100° C. and the heating time is 120 minutes. As a result, nitrogen atoms are introduced into a vicinity of the interface between oxide film 126 and each of reverse breakdown voltage holding layer 122, p regions 123, n⁺ regions 124, and p⁺ regions 125.

It should be noted that after the annealing step using nitrogen monoxide, additional annealing process may be performed using argon (Ar) gas, which is an inert gas. Conditions for this process are, for example, as follows: the heating temperature is 1100° C. and the heating time is 60 minutes.

Referring to FIG. 32, an electrode forming step (step S160: FIG. 28) is performed to form source electrodes 111 and drain electrode 112 in the following manner.

First, a resist film having a pattern is formed on oxide film 126, using a photolithography method. Using the resist film as a mask, portions above n⁺ regions 124 and p⁺ regions 125 in oxide film 126 are removed by etching. In this way, openings are formed in oxide film 126. Next, in each of the openings, a conductive film is formed in contact with each of n⁺ regions 124 and p⁺ regions 125. Then, the resist film is removed, thus removing the conductive film's portions located on the resist film (lift-off). This conductive film may be a metal film, for example, may be made of nickel (Ni). As a result of the lift-off, source electrodes 111 are formed.

It should be noted that on this occasion, heat treatment for alloying is preferably performed. For example, the heat treatment is performed in atmosphere of argon (Ar) gas, which is an inert gas, at a heating temperature of 950° C. for two minutes.

Referring to FIG. 27 again, upper source electrodes 127 are formed on source electrodes 111. Further, drain electrode 112 is formed on the backside surface of substrate 80. Further, gate electrode 110 is formed on oxide film 126. In this way, semiconductor device 100 is obtained.

It should be noted that a configuration may be employed in which conductive types are opposite to those in the present embodiment. Namely, a configuration may be employed in which p type and n type are replaced with each other.

Further, the semiconductor substrate for use in fabricating semiconductor device 100 is not limited to semiconductor substrate 80a of the first embodiment, and may be, for example, each of the semiconductor substrates obtained according to the second to sixth embodiments or their variations.

Further, the DiMOSFET of vertical type has been exemplified, but another semiconductor device may be manufactured using the semiconductor substrate of the present invention. For example, a RESURF-JFET (Reduced Surface Field-Junction Field Effect Transistor) or a Schottky diode may be manufactured.

Eighth Embodiment

Referring to FIG. 33, a method for manufacturing a semiconductor substrate in the present embodiment is a variation of the sixth embodiment (FIG. 23). Specifically, a solid source material 20, a plurality of SiC substrates including SiC substrates 11-13, a graphite sheet 72 (closing portion), and a first heating member 81 are provided on second heating member 82 in this order. After providing them and before sublimating solid source material 20, each of SiC substrates 11-13 is merely placed on solid source material 20. Hence, when viewed in a micro level, an average space DM between each of SiC substrates 11-13 and solid source material 20 is not zero, and is for example 1 μm or greater.

Preferably, in order to sufficiently secure space DM, backside surfaces B1 and B2 are formed by slicing and are not polished after the slicing. In this way, backside surfaces B1 and B2 are provided with moderate undulations, thereby securing space DM sufficiently. Accordingly, a space is secured in which the sublimation gas is spread.

Apart from the configuration described above, the configuration of the present embodiment is substantially the same as the configuration of the sixth embodiment. Hence, the same or corresponding elements are given the same reference characters and are not described repeatedly.

According to the present embodiment, graphite sheet 72 is pressed toward opening CR by the weight of first heating member 81. Accordingly, graphite sheet 72 more securely closes gap GP at opening CR. Thus, opening CR can be closed more securely by the sublimates deposited on graphite sheet 72.

It should be noted that there may be employed an arrangement upside down with respect to the arrangement of FIG. 33. In this case, graphite sheet 72 is pressed toward opening CR by the weight of second heating member 82 instead of first heating member 81.

(Appendix 1)

The semiconductor substrate of the present invention is manufactured in the following method for manufacturing.

(Appendix 2)

Further, the semiconductor device of the present invention is fabricated using a semiconductor substrate fabricated using the following method for manufacturing.

The embodiments disclosed herein are illustrative and non-restrictive in any respect. The scope of the present invention is defined by the terms of the claims, rather than the embodiments described above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

INDUSTRIAL APPLICABILITY

A method for manufacturing a semiconductor substrate in the present invention is advantageously applicable particularly to a method for manufacturing a semiconductor substrate including a portion made of silicon carbide having a single-crystal structure.

DESCRIPTION OF THE REFERENCE SIGNS

10: SiC substrate group; 10a: supported portion; 11: SiC substrate (first silicon carbide substrate); 12: SiC substrate (second silicon carbide substrate); 13-19: SiC substrate; 20, 20p: solid source material; 30, 30p: supporting portion; 70, 71: cover (closing portion); 72: graphite sheet (closing portion); 80a-80c: semiconductor substrate; 80P: combined substrate; 81: first heating member; 82: second heating member; 100: semiconductor device.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

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