After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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CPC
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Patents Grantslast 30 patents

Information Patent Grant
Process for producing semiconductor wafers
- Patent number 11,972,986
- Issue date Apr 30, 2024
- Siltronic AG
- Michael Boy
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group 13 element nitride wafer with reduced variation in off-cut angle
- Patent number 11,965,268
- Issue date Apr 23, 2024
- IV WORKS CO., LTD.
- Vianney Leroux
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon single crystal wafer and silicon s...
- Patent number 11,959,191
- Issue date Apr 16, 2024
- Shin-Etsu Handotai Co., Ltd.
- Wei Feng Qu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a semiconductor substrate and device by bo...
- Patent number 11,961,765
- Issue date Apr 16, 2024
- Mitsubishi Electric Corporation
- Shuichi Hiza
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate manufacturing device applicable to large-di...
- Patent number 11,955,354
- Issue date Apr 9, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminate of aluminum nitride single-crystal substrate
- Patent number 11,952,677
- Issue date Apr 9, 2024
- Tokuyama Corporation
- Masao Ariyuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystal and substrate of conductive GaAs, and method for forming th...
- Patent number 11,955,251
- Issue date Apr 9, 2024
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Method for depositing boron containing silicon germanium layers
- Patent number 11,946,157
- Issue date Apr 2, 2024
- ASM IP Holding B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Impurity control during formation of aluminum nitride crystals and...
- Patent number 11,939,700
- Issue date Mar 26, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Wafer manufacturing method, epitaxial wafer manufacturing method, a...
- Patent number 11,939,698
- Issue date Mar 26, 2024
- SENIC INC.
- Jong Hwi Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal manufacturing method, SiC single crystal manufac...
- Patent number 11,932,967
- Issue date Mar 19, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate and method of manufacturing silicon carbi...
- Patent number 11,913,135
- Issue date Feb 27, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Preparation and application of highly coherent diamond nitrogen vac...
- Patent number 11,905,620
- Issue date Feb 20, 2024
- QUFU NORMAL UNIVERSITY
- Xiaobing Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, and meth...
- Patent number 11,901,170
- Issue date Feb 13, 2024
- JX Metals Corporation
- Shunsuke Oka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing substrate for solar cell and substrate for...
- Patent number 11,901,475
- Issue date Feb 13, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroyuki Otsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Carrier-assisted method for parting crystalline material along lase...
- Patent number 11,901,181
- Issue date Feb 13, 2024
- Wolfspeed, Inc.
- Matthew Donofrio
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Gallium arsenide single crystal substrate and method for producing...
- Patent number 11,891,720
- Issue date Feb 6, 2024
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- G01 - MEASURING TESTING
Information Patent Grant
Group 13 element nitride wafer with reduced variation in off-cut angle
- Patent number 11,891,719
- Issue date Feb 6, 2024
- IV WORKS CO., LTD.
- Vianney Leroux
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, and meth...
- Patent number 11,894,225
- Issue date Feb 6, 2024
- JX Metals Corporation
- Shunsuke Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced cooling system using throttled internal cooling passage fl...
- Patent number 11,879,688
- Issue date Jan 23, 2024
- Mainstream Engineering Corporation
- Brian P Tucker
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a crystalline layer of PZT material by transfe...
- Patent number 11,877,514
- Issue date Jan 16, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Systems and methods for disassembling two-dimensional van der Waals...
- Patent number 11,866,847
- Issue date Jan 9, 2024
- The Trustees of Columbia University In the City of New York
- Fang Liu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for manufacturing of patterned SrB4BO7 and PbB4O7 crystals
- Patent number 11,868,022
- Issue date Jan 9, 2024
- IPG PHOTONICS CORPORATION
- Dan Perlov
- G02 - OPTICS
Information Patent Grant
Method for reducing the thickness of solid-state layers provided wi...
- Patent number 11,869,810
- Issue date Jan 9, 2024
- Siltectra GmbH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
8-inch SiC single crystal substrate
- Patent number 11,859,313
- Issue date Jan 2, 2024
- Resonac Corporation
- Tomohiro Shonai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of cleaning a group III-nitride single crystal substrate com...
- Patent number 11,859,312
- Issue date Jan 2, 2024
- Tokuyama Corporation
- Masayuki Fukuda
- B08 - CLEANING
Information Patent Grant
Method for preparing large size beta-type ammonium tetramolybdate m...
- Patent number 11,859,314
- Issue date Jan 2, 2024
- Zhengzhou University
- Xiaochao Wu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Passivation of nanocrystals tailored to different facets, and its a...
- Patent number 11,846,041
- Issue date Dec 19, 2023
- QD SOLAR INC.
- Younghoon Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
ALD method with multi-chambers for sic or multi-elements epitaxial...
- Patent number 11,834,754
- Issue date Dec 5, 2023
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Zhaosheng Meng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Lithium niobate having p-type nanowire region or n-type nanowire re...
- Patent number 11,834,755
- Issue date Dec 5, 2023
- Nankai University
- Guo-Quan Zhang
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYER
- Publication number 20240145550
- Publication date May 2, 2024
- Applied Materials, Inc.
- Jason JEWELL
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER
- Publication number 20240141553
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pu-Fang CHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON...
- Publication number 20240141549
- Publication date May 2, 2024
- Peking University
- Xinqiang WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR EVALUATING CRYSTAL DEFECTS IN SILICON CARBIDE SINGLE CRY...
- Publication number 20240142390
- Publication date May 2, 2024
- Shin-Etsu Handotai Co., Ltd.
- Yutaka SHIGA
- C30 - CRYSTAL GROWTH
Information Patent Application
CONTROLLED SURFACE CHEMISTRY FOR POLYTYPIC AND MICROSTRUCTURAL SELE...
- Publication number 20240133077
- Publication date Apr 25, 2024
- Mainstream Engineering Corporation
- Jesse A. Johnson
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SUBSTRATE FOR SOLAR CELL AND SUBSTRATE FOR...
- Publication number 20240136464
- Publication date Apr 25, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroyuki OTSUKA
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Carrier-Assisted Method for Parting Crystalline Material Along Lase...
- Publication number 20240128085
- Publication date Apr 18, 2024
- Wolfspeed, Inc.
- Matthew Donofrio
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME
- Publication number 20240117525
- Publication date Apr 11, 2024
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- C30 - CRYSTAL GROWTH
Information Patent Application
Deposition Of Piezoelectric Films
- Publication number 20240114800
- Publication date Apr 4, 2024
- Applied Materials, Inc.
- Vijay Bhan Sharma
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS
- Publication number 20240110307
- Publication date Apr 4, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR MANUFACTURING A PHASE CHANGE MATERIAL
- Publication number 20240114806
- Publication date Apr 4, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Damien TEREBENEC
- C30 - CRYSTAL GROWTH
Information Patent Application
MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...
- Publication number 20240105782
- Publication date Mar 28, 2024
- TANKEBLUE SEMICONDUCTOR CO., LTD.
- Yanfang LOU
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
LITHIATION OF POROUS-Si FOR HIGH PERFORMANCE ANODE
- Publication number 20240102201
- Publication date Mar 28, 2024
- Posi Energy- Silicon Power. LLC
- DEVENDRA K SADANA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR MANUFACTURING AN OPTOELECTRONIC DEVICE AND OP...
- Publication number 20240093403
- Publication date Mar 21, 2024
- Mohammad Reza AZIZIYAN
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS AND METHODS FOR DISASSEMBLING TWO-DIMENSIONAL VAN DER WAALS...
- Publication number 20240093407
- Publication date Mar 21, 2024
- THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
- Fang Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, A...
- Publication number 20240076799
- Publication date Mar 7, 2024
- SENIC Inc.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL
- Publication number 20240060210
- Publication date Feb 22, 2024
- ELEMENT SIX TECHNOLOGIES LIMITED
- ANDREW MARK EDMONDS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING A MONOCRYSTALLINE LAYER OF LITHIUM NIOBATE BY...
- Publication number 20240044043
- Publication date Feb 8, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING SINGLE CRYSTALS
- Publication number 20240035200
- Publication date Feb 1, 2024
- EBNER INDUSTRIEOFENBAU GMBH
- Robert EBNER
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal Puller, Method for Manufacturing Monocrystalline Silicon In...
- Publication number 20240035197
- Publication date Feb 1, 2024
- Xi'an ESWIN Material Technology Co., Ltd.
- Wanwan ZHANG
- C30 - CRYSTAL GROWTH
Information Patent Application
STENTS HAVING A HYBRID PATTERN AND METHODS OF MANUFACTURE
- Publication number 20240016630
- Publication date Jan 18, 2024
- Vactronix Scientific, LLC
- Armando Garza
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
Crystal Puller for Pulling Monocrystalline Silicon Ingots
- Publication number 20240018689
- Publication date Jan 18, 2024
- Xi'an ESWIN Material Technology Co., Ltd.
- Peng Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PROCESSING A SINGLE CRYSTAL BLANK
- Publication number 20240018690
- Publication date Jan 18, 2024
- Disco Corporation
- Manuel KRUSE
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATES FOR OPTOELECTRONIC DEVICES AND METHODS OF MANUFACTURING...
- Publication number 20240011193
- Publication date Jan 11, 2024
- Socpra Sciences et Genie s.e.c.
- Youcef Ataellah BIOUD
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
COMPOSITE SUBSTRATE, METHOD FOR PRODUCING COMPOSITE SUBSTRATE, AND...
- Publication number 20240003043
- Publication date Jan 4, 2024
- NGK Insulators, Ltd.
- Jun YOSHIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Exfoliation Method
- Publication number 20240006243
- Publication date Jan 4, 2024
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESSING CHAMBER WITH ANNEALING MINI-ENVIRONMENT
- Publication number 20230420275
- Publication date Dec 28, 2023
- Applied Materials, Inc.
- Michael Honan
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A CRYSTALLINE LAYER OF PZT MATERIAL BY TRANSFE...
- Publication number 20230422619
- Publication date Dec 28, 2023
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON CHANNEL GROWTH
- Publication number 20230413569
- Publication date Dec 21, 2023
- Applied Materials, Inc.
- Hsiang Yu Lee
- C30 - CRYSTAL GROWTH

After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Industry

Parent Industries

Current Industry

Sub Industries

Patents Grantslast 30 patents

Process for producing semiconductor wafers

Group 13 element nitride wafer with reduced variation in off-cut angle

Method for manufacturing silicon single crystal wafer and silicon s...

Method for manufacturing a semiconductor substrate and device by bo...

Semiconductor substrate manufacturing device applicable to large-di...

Laminate of aluminum nitride single-crystal substrate

Crystal and substrate of conductive GaAs, and method for forming th...

Method for depositing boron containing silicon germanium layers

Impurity control during formation of aluminum nitride crystals and...

Wafer manufacturing method, epitaxial wafer manufacturing method, a...

SiC single crystal manufacturing method, SiC single crystal manufac...

Silicon carbide substrate and method of manufacturing silicon carbi...

Preparation and application of highly coherent diamond nitrogen vac...

Indium phosphide substrate, semiconductor epitaxial wafer, and meth...

Method for manufacturing substrate for solar cell and substrate for...

Carrier-assisted method for parting crystalline material along lase...

Gallium arsenide single crystal substrate and method for producing...

Group 13 element nitride wafer with reduced variation in off-cut angle

Indium phosphide substrate, semiconductor epitaxial wafer, and meth...

Advanced cooling system using throttled internal cooling passage fl...

Method for producing a crystalline layer of PZT material by transfe...

Systems and methods for disassembling two-dimensional van der Waals...

Method for manufacturing of patterned SrB4BO7 and PbB4O7 crystals

Method for reducing the thickness of solid-state layers provided wi...

8-inch SiC single crystal substrate

Method of cleaning a group III-nitride single crystal substrate com...

Method for preparing large size beta-type ammonium tetramolybdate m...

Passivation of nanocrystals tailored to different facets, and its a...

ALD method with multi-chambers for sic or multi-elements epitaxial...

Lithium niobate having p-type nanowire region or n-type nanowire re...

Patents Applicationslast 30 patents

CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYER

VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER

PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON...

METHOD FOR EVALUATING CRYSTAL DEFECTS IN SILICON CARBIDE SINGLE CRY...

CONTROLLED SURFACE CHEMISTRY FOR POLYTYPIC AND MICROSTRUCTURAL SELE...

METHOD FOR MANUFACTURING SUBSTRATE FOR SOLAR CELL AND SUBSTRATE FOR...

Carrier-Assisted Method for Parting Crystalline Material Along Lase...

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME

Deposition Of Piezoelectric Films

METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS

PROCESS FOR MANUFACTURING A PHASE CHANGE MATERIAL

MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...

CONDUCTIVE C-PLANE GaN SUBSTRATE

LITHIATION OF POROUS-Si FOR HIGH PERFORMANCE ANODE

METHOD AND SYSTEM FOR MANUFACTURING AN OPTOELECTRONIC DEVICE AND OP...

SYSTEMS AND METHODS FOR DISASSEMBLING TWO-DIMENSIONAL VAN DER WAALS...

WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, A...

SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL

METHOD FOR PRODUCING A MONOCRYSTALLINE LAYER OF LITHIUM NIOBATE BY...

METHOD FOR GROWING SINGLE CRYSTALS

Crystal Puller, Method for Manufacturing Monocrystalline Silicon In...

STENTS HAVING A HYBRID PATTERN AND METHODS OF MANUFACTURE

Crystal Puller for Pulling Monocrystalline Silicon Ingots

METHOD AND APPARATUS FOR PROCESSING A SINGLE CRYSTAL BLANK

SUBSTRATES FOR OPTOELECTRONIC DEVICES AND METHODS OF MANUFACTURING...

COMPOSITE SUBSTRATE, METHOD FOR PRODUCING COMPOSITE SUBSTRATE, AND...

Semiconductor Exfoliation Method

PROCESSING CHAMBER WITH ANNEALING MINI-ENVIRONMENT

METHOD FOR PRODUCING A CRYSTALLINE LAYER OF PZT MATERIAL BY TRANSFE...

EPITAXIAL SILICON CHANNEL GROWTH