3915765

Information

• Patent Grant
• 3915765

• References
• Source

• Patent Number

  3,915,765

• Date Filed

  Not available

• Date Issued

  Tuesday, October 28, 1975
  49 years ago

• CPC

  • H01L21/02392 - Phosphides
  • H01L21/02395 - Arsenides
  • H01L21/0242 - Crystalline insulating materials
  • H01L21/02463 - Arsenides
  • H01L21/02546 - Arsenides
  • H01L21/02557 - Sulfides
  • H01L21/02576 - N-type
  • H01L21/02579 - P-type
  • H01L21/02631 - Physical deposition at reduced pressure
  • H01L21/02661 - In-situ cleaning
  • Y10S148/007 - Autodoping
  • Y10S148/017 - Clean surfaces
  • Y10S148/018 - Compensation doping
  • Y10S148/02 - Contacts, special
  • Y10S148/064 - Gp II-VI compounds
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/072 - Heterojunctions
  • Y10S148/139 - Schottky barrier
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S148/169 - Vacuum deposition
  • Y10S438/909 - Controlled atmosphere
  • Y10S438/916 - Autodoping control or utilization
  • Y10S438/925 - Fluid growth doping control

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 204 - Chemistry: electrical and wave energy
  • 257 - Active solid-state devices
  • 372 - Coherent light generators