3928092

Information

• Patent Grant
• 3928092

• References
• Source

• Patent Number

  3,928,092

• Date Filed

  Not available

• Date Issued

  Tuesday, December 23, 1975
  49 years ago

• CPC

  • C30B23/02 - Epitaxial-layer growth
  • C30B23/04 - Pattern deposit
  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • C30B33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
  • H01L21/02392 - Phosphides
  • H01L21/02395 - Arsenides
  • H01L21/02463 - Arsenides
  • H01L21/02546 - Arsenides
  • H01L21/02576 - N-type
  • H01L21/02579 - P-type
  • H01L21/02631 - Physical deposition at reduced pressure
  • H01L21/02658 - Pretreatments
  • H01L21/7605 - between components manufactured in an active substrate comprising AIII BV compounds
  • H01L21/764 - Air gaps
  • H01L29/0642 - Isolation within the component
  • Y10S148/007 - Autodoping
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/085 - Isolated-integrated
  • Y10S148/122 - Polycrystalline
  • Y10S148/139 - Schottky barrier
  • Y10S148/169 - Vacuum deposition

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices