by chemical vapor deposition

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H01L45/1616

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/1616by chemical vapor deposition

Industries

Patents Grantslast 30 patents

Information Patent Grant
Sub-stoichiometric metal-oxide thin films
- Patent number 11,646,199
- Issue date May 9, 2023
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High yield RRAM cell with optimized film scheme
- Patent number 11,637,239
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,611,039
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Hao Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory with improved recovery from element segregation
- Patent number 11,587,978
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory with vertical transport transistor
- Patent number 11,588,104
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 11,588,107
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synthesis and use of precursors for ALD of group VA element contain...
- Patent number 11,542,600
- Issue date Jan 3, 2023
- ASM IP Holding B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of forming a memory cell comprising a metal chalcogenide ma...
- Patent number 11,538,991
- Issue date Dec 27, 2022
- Micron Technology, Inc.
- Eugene P. Marsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell having a low forming voltage
- Patent number 11,527,717
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device and methods of fabrication
- Patent number 11,502,254
- Issue date Nov 15, 2022
- Intel Corporation
- Nathan Strutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS-compatible protonic resistive devices
- Patent number 11,462,683
- Issue date Oct 4, 2022
- Massachusetts Institute of Technology
- Oguzhan Murat Onen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Retention improvement by high-k encapsulation of RRAM devices
- Patent number 11,462,684
- Issue date Oct 4, 2022
- Intel Corporation
- Albert Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device
- Patent number 11,456,419
- Issue date Sep 27, 2022
- Samsung Electronics Co., Ltd.
- Juhyun Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating correlated electron material (CEM) devices
- Patent number 11,450,804
- Issue date Sep 20, 2022
- CERFE LABS, INC.
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices comprising metal oxide materials and related met...
- Patent number 11,444,243
- Issue date Sep 13, 2022
- Micron Technology, Inc.
- Santanu Sarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of selector on confined phase change memory
- Patent number 11,437,571
- Issue date Sep 6, 2022
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device, memory integrated circuit and manufacturing method t...
- Patent number 11,417,839
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device and method of fabricating the same
- Patent number 11,411,179
- Issue date Aug 9, 2022
- Samsung Electronics Co., Ltd.
- Jaeho Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,411,178
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall protection for PCRAM device
- Patent number 11,362,277
- Issue date Jun 14, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally switching cell having sub-stoichiometric metal oxide acti...
- Patent number 11,362,274
- Issue date Jun 14, 2022
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory apparatus including resistive-change material layer
- Patent number 11,329,223
- Issue date May 10, 2022
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,289,647
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layered conductive metal oxide structures and methods for fac...
- Patent number 11,289,542
- Issue date Mar 29, 2022
- Hefei Reliance Memory Limited
- Jian Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM crossbar array circuits with specialized interface layers for...
- Patent number 11,283,014
- Issue date Mar 22, 2022
- TetraMem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Textured memory cell structures
- Patent number 11,264,568
- Issue date Mar 1, 2022
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Projected memory device with carbon-based projection component
- Patent number 11,251,370
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Ghazi Sarwat Syed
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive random access memory and method of manufacturing the same
- Patent number 11,239,417
- Issue date Feb 1, 2022
- Winbond Electronics Corp.
- Bo-Lun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Si2Te3 resistive memory
- Patent number 11,227,995
- Issue date Jan 18, 2022
- Jingbiao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and a method for forming the memory device
- Patent number 11,211,555
- Issue date Dec 28, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...
- Publication number 20240164224
- Publication date May 16, 2024
- United Microelectronics Corp.
- Kai-Jiun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS-INDUCED FORMING OF OXIDE RRAM
- Publication number 20240155952
- Publication date May 9, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...
- Publication number 20240114813
- Publication date Apr 4, 2024
- TetraMem Inc.
- Mingche Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL SIDEWALL HEATER
- Publication number 20240107900
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240074334
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM WITH HIGH WORK FUNCTION CAP
- Publication number 20240040940
- Publication date Feb 1, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM DEVICE
- Publication number 20240008373
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chang-Chih Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL ULTRA-THIN PCM CELL
- Publication number 20240008374
- Publication date Jan 4, 2024
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...
- Publication number 20230422642
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CURRENT PHASE-CHANGE MEMORY DEVICE
- Publication number 20230397510
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR SEMICONDUCTOR DEVICES INCLUDING AMORPHOUS SILICON
- Publication number 20230363297
- Publication date Nov 9, 2023
- Intel Corporation
- Luca Fumagalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL FORMATION IN THREE DIMENSIONAL MEMORY ARRAYS USING ATOM...
- Publication number 20230354721
- Publication date Nov 2, 2023
- Micron Technology, Inc.
- Paolo Fantini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230354724
- Publication date Nov 2, 2023
- United Microelectronics Corp.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE
- Publication number 20230309428
- Publication date Sep 28, 2023
- KIOXIA Corporation
- Kenji FUKUDA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING HEAT INSULATING LAYER AND METHOD OF...
- Publication number 20230301208
- Publication date Sep 21, 2023
- SK HYNIX INC.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY CELL WITH REDUCED HEATER SIZE
- Publication number 20230292637
- Publication date Sep 14, 2023
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER AND METAL PA...
- Publication number 20230292636
- Publication date Sep 14, 2023
- SK HYNIX INC.
- Woo Cheol LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE WITH ULTRA-THIN BARRIER LAYER AND METHODS O...
- Publication number 20230284540
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230276720
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Shuo LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE RESISTIVE M...
- Publication number 20230240157
- Publication date Jul 27, 2023
- SK HYNIX INC.
- In Ku KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT
- Publication number 20230189668
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS
- Publication number 20230180636
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL
- Publication number 20230129619
- Publication date Apr 27, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY WITH IMPROVED RECOVERY FROM ELEMENT SEGREGATION
- Publication number 20230096174
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY DEVICE INCLUDING DUAL ACTIVE LAYER, MANU...
- Publication number 20230097791
- Publication date Mar 30, 2023
- RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Hyung Koun CHO
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED MEMORY PILLAR
- Publication number 20230099303
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A MEMORY RESISTOR DEVICE
- Publication number 20230092998
- Publication date Mar 23, 2023
- UCL Business LTD
- Longfei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...
- Publication number 20230093384
- Publication date Mar 23, 2023
- ASM IP HOLDING B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ELECTRONIC DEVICE INCLUDING CHANNEL LAYER INCLUDING VARIABLE RESIST...
- Publication number 20230082400
- Publication date Mar 16, 2023
- SK HYNIX INC.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...
- Publication number 20230055569
- Publication date Feb 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS

by chemical vapor deposition

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Sub-stoichiometric metal-oxide thin films

High yield RRAM cell with optimized film scheme

Resistive random access memory device

Phase change memory with improved recovery from element segregation

Resistive memory with vertical transport transistor

Integrated circuit structure

Synthesis and use of precursors for ALD of group VA element contain...

Methods of forming a memory cell comprising a metal chalcogenide ma...

Resistive memory cell having a low forming voltage

Resistive random access memory device and methods of fabrication

CMOS-compatible protonic resistive devices

Retention improvement by high-k encapsulation of RRAM devices

Variable resistance memory device

Fabricating correlated electron material (CEM) devices

Electronic devices comprising metal oxide materials and related met...

Integration of selector on confined phase change memory

Memory device, memory integrated circuit and manufacturing method t...

Variable resistance memory device and method of fabricating the same

Resistive random access memory device

Sidewall protection for PCRAM device

Laterally switching cell having sub-stoichiometric metal oxide acti...

Nonvolatile memory apparatus including resistive-change material layer

Resistive random access memory device

Multi-layered conductive metal oxide structures and methods for fac...

RRAM crossbar array circuits with specialized interface layers for...

Textured memory cell structures

Projected memory device with carbon-based projection component

Resistive random access memory and method of manufacturing the same

Si2Te3 resistive memory

Memory device and a method for forming the memory device

Patents Applicationslast 30 patents

RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...

PROCESS-INDUCED FORMING OF OXIDE RRAM

CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...

PHASE CHANGE MEMORY CELL SIDEWALL HEATER

PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

RRAM WITH HIGH WORK FUNCTION CAP

PCM DEVICE

VERTICAL ULTRA-THIN PCM CELL

PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...

LOW CURRENT PHASE-CHANGE MEMORY DEVICE

TECHNOLOGIES FOR SEMICONDUCTOR DEVICES INCLUDING AMORPHOUS SILICON

MEMORY CELL FORMATION IN THREE DIMENSIONAL MEMORY ARRAYS USING ATOM...

RESISTIVE MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF

STORAGE DEVICE

SEMICONDUCTOR DEVICE INCLUDING HEAT INSULATING LAYER AND METHOD OF...

PHASE-CHANGE MEMORY CELL WITH REDUCED HEATER SIZE

SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER AND METAL PA...

RESISTIVE MEMORY DEVICE WITH ULTRA-THIN BARRIER LAYER AND METHODS O...

MEMORY DEVICE AND METHOD FOR FORMING THE SAME

RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE RESISTIVE M...

SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT

SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS

CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL

PHASE CHANGE MEMORY WITH IMPROVED RECOVERY FROM ELEMENT SEGREGATION

RESISTIVE SWITCHING MEMORY DEVICE INCLUDING DUAL ACTIVE LAYER, MANU...

EMBEDDED MEMORY PILLAR

METHOD FOR MANUFACTURING A MEMORY RESISTOR DEVICE

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...

ELECTRONIC DEVICE INCLUDING CHANNEL LAYER INCLUDING VARIABLE RESIST...

MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...