Differential crystal growth rates

Industry

CPC
Y10S148/029

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/029Differential crystal growth rates

Industries

Patents Grantslast 30 patents

Information Patent Grant
Process of producing monolithically integrated multifunction circui...
- Patent number 5,066,605
- Issue date Nov 19, 1991
- Licentia Patent-Verwaltungs- GmbH
- Erich Kasper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating self-aligned semiconductor devices
- Patent number 5,061,644
- Issue date Oct 29, 1991
- Honeywell Inc.
- Jerry Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of fabricating a heterojunction field effect transistor
- Patent number 5,026,655
- Issue date Jun 25, 1991
- NEC Corporation
- Keiichi Ohata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for photo-assisted epitaxial growth using remote plasma wit...
- Patent number 4,918,028
- Issue date Apr 17, 1990
- Canon Kabushiki Kaisha
- Shigeru Shirai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Heterojunction field effect transistor device and process of fabric...
- Patent number 4,893,155
- Issue date Jan 9, 1990
- General Electric Company
- Keiichi Ohata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroepitaxial growth of SiC on Si
- Patent number 4,865,659
- Issue date Sep 12, 1989
- Sharp Kabushiki Kaisha
- Mitsuhiro Shigeta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming thin epitaxial layers using multistep growth for...
- Patent number 4,859,626
- Issue date Aug 22, 1989
- Texas Instruments Incorporated
- Rick L. Wise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating compound semiconductor laser using selective...
- Patent number 4,843,031
- Issue date Jun 27, 1989
- Matsushita Electric Industrial Co., Ltd.
- Yuzaburo Ban
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective OMCVD growth of compound semiconductor materials on silic...
- Patent number 4,826,784
- Issue date May 2, 1989
- Kopin Corporation
- Jack P. Salerno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for obtaining regions of dielectrically isolated single crys...
- Patent number 4,824,795
- Issue date Apr 25, 1989
- Siliconix Incorporated
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for generating a strip waveguide
- Patent number 4,818,722
- Issue date Apr 4, 1989
- Siemens Aktiengesellschaft
- Jochen Heinen
- G02 - OPTICS
Information Patent Grant
Method for selective heteroepitaxial III-V compound growth
- Patent number 4,797,374
- Issue date Jan 10, 1989
- Plessey Overseas Limited
- Michael D. Scott
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making defect free silicon islands using SEG
- Patent number 4,758,531
- Issue date Jul 19, 1988
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3433686
- Patent number 3,433,686
- Issue date Mar 18, 1969
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3425879
- Patent number 3,425,879
- Issue date Feb 4, 1969
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3403439
- Patent number 3,403,439
- Issue date Oct 1, 1968
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3401449
- Patent number 3,401,449
- Issue date Sep 17, 1968
- C30 - CRYSTAL GROWTH
Information Patent Grant
3381185
- Patent number 3,381,185
- Issue date Apr 30, 1968
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3375417
- Patent number 3,375,417
- Issue date Mar 26, 1968
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3372069
- Patent number 3,372,069
- Issue date Mar 5, 1968
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3322581
- Patent number 3,322,581
- Issue date May 30, 1967
- H01 - BASIC ELECTRIC ELEMENTS

Differential crystal growth rates

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Process of producing monolithically integrated multifunction circui...

Method for fabricating self-aligned semiconductor devices

Process of fabricating a heterojunction field effect transistor

Process for photo-assisted epitaxial growth using remote plasma wit...

Heterojunction field effect transistor device and process of fabric...

Heteroepitaxial growth of SiC on Si

Method of forming thin epitaxial layers using multistep growth for...

Method of fabricating compound semiconductor laser using selective...

Selective OMCVD growth of compound semiconductor materials on silic...

Method for obtaining regions of dielectrically isolated single crys...

Method for generating a strip waveguide

Method for selective heteroepitaxial III-V compound growth

Method of making defect free silicon islands using SEG

3433686

3425879

3403439

3401449

3381185

3375417

3372069

3322581