3425879

Information

• Patent Grant
• 3425879

• References
• Source

• Patent Number

  3,425,879

• Date Filed

  Not available

• Date Issued

  Tuesday, February 4, 1969
  55 years ago

• CPC

  • H01L27/0658 - Vertical bipolar transistor in combination with resistors or capacitors
  • H01L21/02381 - Silicon, silicon germanium, germanium
  • H01L21/02395 - Arsenides
  • H01L21/02433 - Crystal orientation
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/02546 - Arsenides
  • H01L21/02576 - N-type
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • H01L21/02639 - Preparation of substrate for selective deposition
  • H01L21/8222 - Bipolar technology
  • Y10S148/017 - Clean surfaces
  • Y10S148/026 - Deposition thru hole in mask
  • Y10S148/029 - Differential crystal growth rates
  • Y10S148/043 - Dual dielectric
  • Y10S148/049 - Equivalence and options
  • Y10S148/051 - Etching
  • Y10S148/085 - Isolated-integrated
  • Y10S148/106 - Masks, special
  • Y10S148/115 - Orientation
  • Y10S148/148 - Silicon carbide

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 427 - Coating processes