Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00

GPHYSICS G11Information storage G11CSTATIC STORES

G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00

G11C13/0002using resistance random access memory [RRAM] elements G11C13/0004comprising amorphous/crystalline phase transition cells G11C13/0007comprising metal oxide memory material G11C13/0009RRAM elements whose operation depends upon chemical change G11C13/0011comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs] G11C13/0014comprising cells based on organic memory material G11C13/0016comprising polymers G11C13/0019comprising bio-molecules G11C13/0021Auxiliary circuits G11C13/0023Address circuits or decoders G11C13/0026Bit-line or column circuits G11C13/0028Word-line or row circuits G11C13/003Cell access G11C13/0033Disturbance prevention or evaluation; Refreshing of disturbed memory data G11C13/0035Evaluating degradation, retention or wearout G11C13/0038Power supply circuits G11C13/004Reading or sensing circuits or methods G11C13/0059Security or protection circuits or methods G11C13/0061Timing circuits or methods G11C13/0064Verifying circuits or methods G11C13/0069Writing or programming circuits or methods G11C13/0097Erasing G11C13/02using elements whose operation depends upon chemical change G11C13/025using fullerenes G11C13/04using optical elements using other beam accessed elements G11C13/041using photochromic storage elements G11C13/042using information stored in the form of an interference pattern G11C13/043using magnetic-optical storage elements G11C13/044using electro-optical elements G11C13/045using photochromic storage elements G11C13/046using other storage elements storing information in the form of an interference pattern G11C13/047using electro-optical elements G11C13/048using other optical storage elements G11C13/06using magneto-optical elements