Further means within the switching material region to limit current flow

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H01L45/1246

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/1246Further means within the switching material region to limit current flow

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Patents Grantslast 30 patents

Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive interface material
- Patent number 11,641,788
- Issue date May 2, 2023
- Micron Technology, Inc.
- Andrea Gotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,641,749
- Issue date May 2, 2023
- Samsung Electronics Co., Ltd.
- Dong Jun Seong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and device including memristor material
- Patent number 11,631,808
- Issue date Apr 18, 2023
- Rockwell Collins, Inc.
- Kyle B. Snyder
- G11 - INFORMATION STORAGE
Information Patent Grant
Diffusion barrier layer in programmable metallization cell
- Patent number 11,594,678
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,587,977
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Dong-Jun Seong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device and manufacturing method of the same
- Patent number 11,563,172
- Issue date Jan 24, 2023
- SK hynix Inc.
- Jae Hyun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered memory cell profiles
- Patent number 11,545,625
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Resetting method of resistive random access memory
- Patent number 11,538,525
- Issue date Dec 27, 2022
- Winbond Electronics Corp.
- Ping-Kun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Buffer layer in memory cell to prevent metal redeposition
- Patent number 11,532,785
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a passive material between memory c...
- Patent number 11,515,358
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having an oxide barrier layer
- Patent number 11,508,905
- Issue date Nov 22, 2022
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,437,573
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell with switching layer comprising one or more d...
- Patent number 11,430,951
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector devices with integrated barrier materials
- Patent number 11,404,639
- Issue date Aug 2, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structure to improve RRAM performance
- Patent number 11,329,221
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Ting Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current delivery and spike mitigation in a memory cell array
- Patent number 11,322,546
- Issue date May 3, 2022
- Intel Corporation
- Shafqat Ahmed
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory and manufacturing method thereof
- Patent number 11,316,106
- Issue date Apr 26, 2022
- Winbond Electronics Corp.
- Chung-Hsuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layered conductive metal oxide structures and methods for fac...
- Patent number 11,289,542
- Issue date Mar 29, 2022
- Hefei Reliance Memory Limited
- Jian Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-selecting memory cell with dielectric barrier
- Patent number 11,271,153
- Issue date Mar 8, 2022
- Micron Technology, Inc.
- Lorenzo Fratin
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory and method of manufacturing the same
- Patent number 11,239,417
- Issue date Feb 1, 2022
- Winbond Electronics Corp.
- Bo-Lun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive bridge semiconductor component and manufacturing method...
- Patent number 11,223,013
- Issue date Jan 11, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Qi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change memory device having reversed phase-change characteris...
- Patent number 11,195,996
- Issue date Dec 7, 2021
- Samsung Electronics Co., Ltd.
- Yun Heub Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-based resistive non-volatile memory cell and method for manuf...
- Patent number 11,189,792
- Issue date Nov 30, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Laurent Grenouillet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structure to improve RRAM performance
- Patent number 11,183,631
- Issue date Nov 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Ting Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory and resetting method thereof
- Patent number 11,176,996
- Issue date Nov 16, 2021
- Winbond Electronics Corp.
- Ping-Kun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Leakage resistant RRAM/MIM structure
- Patent number 11,158,789
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Chyi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and manufacturing method thereof
- Patent number 11,152,565
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory with conductive bridge filament
- Patent number 11,145,814
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom electrode structure and method of forming the same
- Patent number 11,133,462
- Issue date Sep 28, 2021
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PHASE-CHANGE MEMORY CELL WITH MIXED-MATERIAL SWITCHABLE REGION
- Publication number 20240196766
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Matthew Joseph BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MEMORY ELEMENT TO CONFINE METAL WITH SPACER
- Publication number 20240130255
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Robert Viktor Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20230397514
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM WITH POST-PATTERNED TREATED MEMORY FILMS TO PROVIDE IMPROVED E...
- Publication number 20230371407
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Watson Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES HAVING AN ELECTRODE WITH AN EXTENSION
- Publication number 20230217843
- Publication date Jul 6, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- JIANXUN SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE BASED ON NANO CURRENT CHANNEL
- Publication number 20230099931
- Publication date Mar 30, 2023
- HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Xiaomin CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION
- Publication number 20230100433
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE
- Publication number 20230093157
- Publication date Mar 23, 2023
- KIOXIA Corporation
- Shigeyuki HIRAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND PROJECTION LINER FOR AI DEVICE
- Publication number 20230070462
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS OF MAKING THE SAME
- Publication number 20230065317
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES INCLUDING A PASSIVE MATERIAL BETWEEN MEMORY CELLS AND CONDU...
- Publication number 20230029529
- Publication date Feb 2, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20230027508
- Publication date Jan 26, 2023
- United Microelectronics Corp.
- Kai Jiun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES HAVING AN ELECTRODE WITH TAPERED SIDES
- Publication number 20220416158
- Publication date Dec 29, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220367806
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220367800
- Publication date Nov 17, 2022
- DB HITEK CO., LTD.
- Hyun Chan JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL
- Publication number 20220367801
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...
- Publication number 20220336739
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE BRIDGE MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND...
- Publication number 20220254998
- Publication date Aug 11, 2022
- NATIONAL UNIVERSITY CORPORATION TOTTORI UNIVERSITY
- Toshiyuki ITOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220190034
- Publication date Jun 16, 2022
- Samsung Electronics Co., Ltd.
- DONG-JUN SEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FAC...
- Publication number 20220190036
- Publication date Jun 16, 2022
- Hefei Reliance Memory Limited
- Jian WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURES AND METHODS FOR FORMING THE SAME
- Publication number 20220190033
- Publication date Jun 16, 2022
- WINBOND ELECTRONICS CORP.
- Po-Yen HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND DEVICE INCLUDING MEMRISTOR MATERIAL
- Publication number 20220181548
- Publication date Jun 9, 2022
- Rockwell Collins, Inc.
- Kyle B. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE INTERFACE MATERIAL
- Publication number 20220181549
- Publication date Jun 9, 2022
- Micron Technology, Inc.
- Andrea Gotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMRISTOR HAVING METAL/ION CHANNELS FORMED IN INSULATING LAYER AND...
- Publication number 20220123208
- Publication date Apr 21, 2022
- Research & Business Foundation Sungkyunkwan University
- Woojong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION
- Publication number 20220123207
- Publication date Apr 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20220102628
- Publication date Mar 31, 2022
- SK hynix Inc.
- Jae Hyun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20220093859
- Publication date Mar 24, 2022
- WINBOND ELECTRONICS CORP.
- Bo-Lun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR INITIALIZING THE SAME
- Publication number 20220069208
- Publication date Mar 3, 2022
- NATIONAL SUN YAT-SEN UNIVERSITY
- Ting-Chang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESETTING METHOD OF RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20220028454
- Publication date Jan 27, 2022
- WINBOND ELECTRONICS CORP.
- Ping-Kun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE HAVING REVERSED PHASE-CHANGE CHARACTERIS...
- Publication number 20220029094
- Publication date Jan 27, 2022
- Samsung Electronics Co., Ltd.
- Yun Heub Song
- H01 - BASIC ELECTRIC ELEMENTS

Further means within the switching material region to limit current flow

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Two-terminal reversibly switchable memory device

Resistive interface material

Semiconductor device and method for fabricating the same

System and device including memristor material

Diffusion barrier layer in programmable metallization cell

Memory device and method of manufacturing the same

Variable resistance memory device and manufacturing method of the same

Tapered memory cell profiles

Resetting method of resistive random access memory

Buffer layer in memory cell to prevent metal redeposition

Semiconductor devices including a passive material between memory c...

Resistive memory device having an oxide barrier layer

Semiconductor device and method for manufacturing the same

Resistive memory cell with switching layer comprising one or more d...

Selector devices with integrated barrier materials

Electrode structure to improve RRAM performance

Current delivery and spike mitigation in a memory cell array

Resistive random access memory and manufacturing method thereof

Multi-layered conductive metal oxide structures and methods for fac...

Self-selecting memory cell with dielectric barrier

Resistive random access memory and method of manufacturing the same

Conductive bridge semiconductor component and manufacturing method...

Phase-change memory device having reversed phase-change characteris...

Oxide-based resistive non-volatile memory cell and method for manuf...

Electrode structure to improve RRAM performance

Resistive random access memory and resetting method thereof

Leakage resistant RRAM/MIM structure

Memory device and manufacturing method thereof

Phase change memory with conductive bridge filament

Bottom electrode structure and method of forming the same

Patents Applicationslast 30 patents

PHASE-CHANGE MEMORY CELL WITH MIXED-MATERIAL SWITCHABLE REGION

STRUCTURE AND METHOD FOR MEMORY ELEMENT TO CONFINE METAL WITH SPACER

TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL

RRAM WITH POST-PATTERNED TREATED MEMORY FILMS TO PROVIDE IMPROVED E...

SEMICONDUCTOR MEMORY DEVICES HAVING AN ELECTRODE WITH AN EXTENSION

PHASE CHANGE MEMORY DEVICE BASED ON NANO CURRENT CHANNEL

BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION

STORAGE DEVICE

WRAP-AROUND PROJECTION LINER FOR AI DEVICE

MEMORY DEVICES AND METHODS OF MAKING THE SAME

DEVICES INCLUDING A PASSIVE MATERIAL BETWEEN MEMORY CELLS AND CONDU...

RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

MEMORY DEVICES HAVING AN ELECTRODE WITH TAPERED SIDES

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL

RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...

CONDUCTIVE BRIDGE MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND...

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FAC...

MEMORY STRUCTURES AND METHODS FOR FORMING THE SAME

SYSTEM AND DEVICE INCLUDING MEMRISTOR MATERIAL

RESISTIVE INTERFACE MATERIAL

MEMRISTOR HAVING METAL/ION CHANNELS FORMED IN INSULATING LAYER AND...

BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION

VARIABLE RESISTANCE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

METHOD OF MANUFACTURING RESISTIVE RANDOM ACCESS MEMORY

RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR INITIALIZING THE SAME

RESETTING METHOD OF RESISTIVE RANDOM ACCESS MEMORY

PHASE-CHANGE MEMORY DEVICE HAVING REVERSED PHASE-CHANGE CHARACTERIS...