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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/1124Gate contact programmed

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Patents Grantslast 30 patents

Information Patent Grant
Method for converting a floating gate non-volatile memory cell to a...
- Patent number 11,665,915
- Issue date May 30, 2023
- STMICROELECTRONICS INTERNATIONAL N.V.
- Fabio De Santis
- G11 - INFORMATION STORAGE
Information Patent Grant
Antifuse OTP structures with hybrid devices and hybrid junctions
- Patent number 11,158,641
- Issue date Oct 26, 2021
- Zhuhai Chuangfeixin Technology Co., Ltd.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array substrate, display panel and display device
- Patent number 11,073,731
- Issue date Jul 27, 2021
- BOE Technology Group Co., Ltd.
- Yoon Sung Um
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device with low gate charge and low figure of merit
- Patent number 10,957,791
- Issue date Mar 23, 2021
- Infineon Technologies Americas Corp.
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked FinFET mask-programmable read only memory containing spaced...
- Patent number 10,916,552
- Issue date Feb 9, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read-only memory (ROM) device structure and method for forming the...
- Patent number 10,685,969
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Hung Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strapping structure of memory circuit
- Patent number 10,685,952
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for converting a floating gate non-volatile memory cell to a...
- Patent number 10,658,364
- Issue date May 19, 2020
- STMicroelectronics S.r.l.
- Fabio De Santis
- G11 - INFORMATION STORAGE
Information Patent Grant
Strapping structure of memory circuit
- Patent number 10,510,740
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mixed three-dimensional memory
- Patent number 10,446,193
- Issue date Oct 15, 2019
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Flat-panel display embedded with a fingerprint sensor and a method...
- Patent number 10,248,831
- Issue date Apr 2, 2019
- Himax Technologies Limited
- Ilin Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
One-time programmable vertical field-effect transistor
- Patent number 10,229,920
- Issue date Mar 12, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strapping structure of memory circuit
- Patent number 10,163,886
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strapping structure of memory circuit
- Patent number 9,911,727
- Issue date Mar 6, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensionally integrated circuit devices including oxidation...
- Patent number 9,911,745
- Issue date Mar 6, 2018
- Samsung Electronics Co., Ltd.
- Dong-Sik Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mixed three-dimensional printed memory
- Patent number 9,666,237
- Issue date May 30, 2017
- ChengDu HaiCun IP Technology LLC
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile multiple time programmable memory device
- Patent number 9,508,439
- Issue date Nov 29, 2016
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus for high speed ROM cells
- Patent number 9,312,265
- Issue date Apr 12, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
LDMOS one-time programmable device
- Patent number 8,969,957
- Issue date Mar 3, 2015
- Broadcom Corporation
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-time programmable device
- Patent number 8,932,912
- Issue date Jan 13, 2015
- Broadcom Corporation
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
8928076
- Patent number 8,928,076
- Issue date Jan 6, 2015
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-time programmable device having an LDMOS structure
- Patent number 8,493,767
- Issue date Jul 23, 2013
- Broadcom Corporation
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated electronic circuit incorporating a capacitor
- Patent number 7,504,683
- Issue date Mar 17, 2009
- STMicroelectronics S.A.
- Philippe Candelier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layered memory cell structure
- Patent number 7,215,563
- Issue date May 8, 2007
- Tyler L. Brandon
- G11 - INFORMATION STORAGE
Information Patent Grant
Mask ROM and fabrication thereof
- Patent number 7,064,035
- Issue date Jun 20, 2006
- Macronix International Co., Ltd.
- Ching-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having electrically erasable programmable read...
- Patent number 7,008,847
- Issue date Mar 7, 2006
- Samsung Electronics Co., Ltd.
- Weon-Ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Matrix of memory cells fabricated by means of a self-aligned source...
- Patent number 6,812,531
- Issue date Nov 2, 2004
- STMicroelectronics S.r.l.
- Livio Baldi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory cell and memory array using a breakdown phenom...
- Patent number 6,798,693
- Issue date Sep 28, 2004
- Kilopass Technologies, Inc.
- Jack Zezhong Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Mask ROM structure having a coding layer between gates and word lines
- Patent number 6,777,762
- Issue date Aug 17, 2004
- Macronix International Co., Ltd.
- Ching-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask ROM structure and manufacturing method thereof
- Patent number 6,720,210
- Issue date Apr 13, 2004
- Macronix International Co., Ltd.
- Ching-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
READ ONLY MEMORY
- Publication number 20220199632
- Publication date Jun 23, 2022
- STMicroelectronics (Crolles 2) SAS
- Abderrezak Marzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel antifuse OTP structures with hybrid devices and hybrid junctions
- Publication number 20210249425
- Publication date Aug 12, 2021
- Zhuhai Chuangfeixin Technology Co., Ltd.,
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Device with Low Gate Charge and Low Figure of Merit
- Publication number 20210193826
- Publication date Jun 24, 2021
- Infineon Technologies Americas Corp.
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING THE SAME
- Publication number 20210143168
- Publication date May 13, 2021
- RENESAS ELECTRONICS CORPORATION
- Junichi SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONVERTING A FLOATING GATE NON-VOLATILE MEMORY CELL TO A...
- Publication number 20200258885
- Publication date Aug 13, 2020
- STMICROELECTRONICS INTERNATIONAL N.V.
- Fabio DE SANTIS
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED FINFET READ ONLY MEMORY
- Publication number 20200135747
- Publication date Apr 30, 2020
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strapping Structure of Memory Circuit
- Publication number 20200111775
- Publication date Apr 9, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20200027962
- Publication date Jan 23, 2020
- Kabushiki Kaisha Toshiba
- Masafumi HAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strapping Structure of Memory Circuit
- Publication number 20190172825
- Publication date Jun 6, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strapping Structure of Memory Circuit
- Publication number 20180158812
- Publication date Jun 7, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS FOR HIGH SPEED ROM CELLS
- Publication number 20140231921
- Publication date Aug 21, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
MASK READ-ONLY MEMORY (ROM) AND METHOD FOR FABRICATING THE SAME
- Publication number 20140183741
- Publication date Jul 3, 2014
- Samsung Electronics Co., Ltd.
- Sang-hoon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
One-Time Programmable Device
- Publication number 20130302960
- Publication date Nov 14, 2013
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS One-Time Programmable Device
- Publication number 20130299904
- Publication date Nov 14, 2013
- Broadcom Corporation
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for High Speed ROM Cells
- Publication number 20130258749
- Publication date Oct 3, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
One-Time Programmable Device Having an LDMOS Structure and Related...
- Publication number 20130082325
- Publication date Apr 4, 2013
- BROADCOM CORPORATION
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED ELECTRONIC CIRCUIT INCORPORATING A CAPACITOR
- Publication number 20090134441
- Publication date May 28, 2009
- STMicroelectronics S.A.
- Philippe Candellier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with mask read-only memory and method of fabri...
- Publication number 20070158737
- Publication date Jul 12, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Seung-Jin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated electronic circuit incorporating a capacitor
- Publication number 20070114596
- Publication date May 24, 2007
- STMicroelectronics S.A.
- Philippe Candelier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED MEMORY CELL STRUCTURE
- Publication number 20050226068
- Publication date Oct 13, 2005
- Tyler L. Brandon
- G11 - INFORMATION STORAGE
Information Patent Application
Mask ROM and fabrication thereof
- Publication number 20040256682
- Publication date Dec 23, 2004
- Ching-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
[MASK ROM STRUCTURE AND MANUFACTURING METHOD THEREOF]
- Publication number 20040121537
- Publication date Jun 24, 2004
- Ching-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20040115887
- Publication date Jun 17, 2004
- Ching-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mask ROM and fabrication thereof
- Publication number 20040084733
- Publication date May 6, 2004
- Macronix International Co., Ltd.
- Ching-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MASK ROM STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20040077131
- Publication date Apr 22, 2004
- Ching-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having electrically erasable programmable read...
- Publication number 20040033664
- Publication date Feb 19, 2004
- Weon-Ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory cell and memory array using a breakdown phenom...
- Publication number 20040008538
- Publication date Jan 15, 2004
- Jack Zezhong Peng
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY CELL AND MEMORY ARRAY USING A BREAKDOWN PHENOM...
- Publication number 20030198085
- Publication date Oct 23, 2003
- Jack Zezhong Peng
- G11 - INFORMATION STORAGE

Gate contact programmed

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for converting a floating gate non-volatile memory cell to a...

Antifuse OTP structures with hybrid devices and hybrid junctions

Array substrate, display panel and display device

Power device with low gate charge and low figure of merit

Stacked FinFET mask-programmable read only memory containing spaced...

Read-only memory (ROM) device structure and method for forming the...

Strapping structure of memory circuit

Method for converting a floating gate non-volatile memory cell to a...

Strapping structure of memory circuit

Mixed three-dimensional memory

Flat-panel display embedded with a fingerprint sensor and a method...

One-time programmable vertical field-effect transistor

Strapping structure of memory circuit

Strapping structure of memory circuit

Three-dimensionally integrated circuit devices including oxidation...

Mixed three-dimensional printed memory

Non-volatile multiple time programmable memory device

Apparatus for high speed ROM cells

LDMOS one-time programmable device

One-time programmable device

8928076

One-time programmable device having an LDMOS structure

Integrated electronic circuit incorporating a capacitor

Multi-layered memory cell structure

Mask ROM and fabrication thereof

Semiconductor device having electrically erasable programmable read...

Matrix of memory cells fabricated by means of a self-aligned source...

Semiconductor memory cell and memory array using a breakdown phenom...

Mask ROM structure having a coding layer between gates and word lines

Mask ROM structure and manufacturing method thereof

Patents Applicationslast 30 patents

READ ONLY MEMORY

Novel antifuse OTP structures with hybrid devices and hybrid junctions

Power Device with Low Gate Charge and Low Figure of Merit

SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING THE SAME

METHOD FOR CONVERTING A FLOATING GATE NON-VOLATILE MEMORY CELL TO A...

STACKED FINFET READ ONLY MEMORY

Strapping Structure of Memory Circuit

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Strapping Structure of Memory Circuit

Strapping Structure of Memory Circuit

APPARATUS FOR HIGH SPEED ROM CELLS

MASK READ-ONLY MEMORY (ROM) AND METHOD FOR FABRICATING THE SAME

One-Time Programmable Device

LDMOS One-Time Programmable Device

Apparatus for High Speed ROM Cells

One-Time Programmable Device Having an LDMOS Structure and Related...

INTEGRATED ELECTRONIC CIRCUIT INCORPORATING A CAPACITOR

Semiconductor device with mask read-only memory and method of fabri...

Integrated electronic circuit incorporating a capacitor

MULTI-LAYERED MEMORY CELL STRUCTURE

Mask ROM and fabrication thereof

[MASK ROM STRUCTURE AND MANUFACTURING METHOD THEREOF]

NON-VOLATILE MEMORY STRUCTURE AND METHOD OF FABRICATING THE SAME

Mask ROM and fabrication thereof

MASK ROM STRUCTURE AND MANUFACTURING METHOD THEREOF

Semiconductor device having electrically erasable programmable read...

Semiconductor memory cell and memory array using a breakdown phenom...

SEMICONDUCTOR MEMORY CELL AND MEMORY ARRAY USING A BREAKDOWN PHENOM...