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8928076
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Information
Patent Grant
8928076
References
Source
Patent Number
8,928,076
Date Filed
Not available
Date Issued
Tuesday, January 6, 2015
9 years ago
CPC
H01L29/7816 - Lateral DMOS transistors
H01L21/76224 - using trench refilling with dielectric materials
H01L23/5252 - comprising anti-fuses
H01L27/088 - the components being field-effect transistors with insulated gate
H01L27/11206 - Programmable ROM [PROM]
H01L29/66681 - Lateral DMOS transistors
H01L27/11226 - Source or drain contact programmed
H01L27/1124 - Gate contact programmed
H01L27/11246 - Gate dielectric programmed
H01L27/11266 - Source or drain doping programmed
H01L29/495 - the conductor material next to the insulator being a simple metal
H01L29/4966 - the conductor material next to the insulator being a composite material
H01L29/517 - the insulating material comprising a metallic compound
H01L29/7835 - with asymmetrical source and drain regions
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