8928076

Information

• Patent Grant
• 8928076

• References
• Source

• Patent Number

  8,928,076

• Date Filed

  Not available

• Date Issued

  Tuesday, January 6, 2015
  10 years ago

• CPC

  • H01L29/7816 - Lateral DMOS transistors
  • H01L21/76224 - using trench refilling with dielectric materials
  • H01L23/5252 - comprising anti-fuses
  • H01L27/088 - the components being field-effect transistors with insulated gate
  • H01L27/11206 - Programmable ROM [PROM]
  • H01L29/66681 - Lateral DMOS transistors
  • H01L27/11226 - Source or drain contact programmed
  • H01L27/1124 - Gate contact programmed
  • H01L27/11246 - Gate dielectric programmed
  • H01L27/11266 - Source or drain doping programmed
  • H01L29/495 - the conductor material next to the insulator being a simple metal
  • H01L29/4966 - the conductor material next to the insulator being a composite material
  • H01L29/517 - the insulating material comprising a metallic compound
  • H01L29/7835 - with asymmetrical source and drain regions