Nitridation, direct, of silicon

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CPC
Y10S148/112

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/112Nitridation, direct, of silicon

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Patents Grantslast 30 patents

Information Patent Grant
Method to cure mobile ion contamination in semiconductor processing
- Patent number 6,114,222
- Issue date Sep 5, 2000
- Micron Technology, Inc.
- Randhir P. S. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to cure mobile ion contamination in semiconductor processing
- Patent number 5,943,602
- Issue date Aug 24, 1999
- Micron Technology, Inc.
- Randhir P. S. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to cure mobile ion contamination in semiconductor processing
- Patent number 5,780,364
- Issue date Jul 14, 1998
- Micron Technology, Inc.
- Randhir P. S. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor having improved oxynitride dielectric
- Patent number 5,541,436
- Issue date Jul 30, 1996
- The Regents of the University of Texas System
- Dim-Lee Kwong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making MOS transistor having improved oxynitride dielectric
- Patent number 5,397,720
- Issue date Mar 14, 1995
- The Regents of the University of Texas System
- Dim-Lee Kwong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a single transistor non-volatile electrically alte...
- Patent number 5,278,087
- Issue date Jan 11, 1994
- Silicon Storage Technology, Inc.
- Ching-Shi Jenq
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for enhancing nitridation and oxidation growth by introducin...
- Patent number 5,264,396
- Issue date Nov 23, 1993
- Micron Semiconductor, Inc.
- Randhir P. S. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite dielectric for a semiconductor device and method of fabri...
- Patent number 5,258,333
- Issue date Nov 2, 1993
- Intel Corporation
- Joseph Shappir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped well structure and method for semiconductor technologies
- Patent number 5,256,563
- Issue date Oct 26, 1993
- Texas Instruments Incorporated
- Mehrdad M. Moslehi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device by forming first and s...
- Patent number 5,254,489
- Issue date Oct 19, 1993
- NEC Corporation
- Hidetoshi Nakata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming oxide isolation
- Patent number 5,236,862
- Issue date Aug 17, 1993
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single transistor non-volatile electrically alterable semiconductor...
- Patent number 5,202,850
- Issue date Apr 13, 1993
- Silicon Storage Technology, Inc.
- Ching-Shi Jenq
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a nitrided silicon dioxide (SiO.sub.x N.sub.y) film
- Patent number 5,198,392
- Issue date Mar 30, 1993
- Oki Electric Industry Co., Ltd.
- Hisashi Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a semiconductor device having a silicon oxyni...
- Patent number 4,980,307
- Issue date Dec 25, 1990
- Fujitsu Limited
- Takashi Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor contact silicide/nitride process with control for sil...
- Patent number 4,784,973
- Issue date Nov 15, 1988
- INMOS Corporation
- E. Henry Stevens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective LPCVD tungsten deposition by nitridation of a dielectric
- Patent number 4,740,483
- Issue date Apr 26, 1988
- Motorola, Inc.
- Philip J. Tobin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having insulating film
- Patent number 4,621,277
- Issue date Nov 4, 1986
- Fujitsu Limited
- Takashi Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nitride formation and use in self-aligned semiconductor dev...
- Patent number 4,575,921
- Issue date Mar 18, 1986
- General Motors Corporation
- Jayant K. Bhagat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an insulation film on semiconductor device surface
- Patent number 4,331,710
- Issue date May 25, 1982
- Fujitsu Limited
- Takao Nozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing method using buried nitride formed by a...
- Patent number 4,113,515
- Issue date Sep 12, 1978
- U.S. Philips Corporation
- Else Kooi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semi-insulating silicon layer
- Patent number 4,084,986
- Issue date Apr 18, 1978
- Sony Corporation
- Teruaki Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3798061
- Patent number 3,798,061
- Issue date Mar 19, 1974
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3540926
- Patent number 3,540,926
- Issue date Nov 17, 1970
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Nitridation, direct, of silicon

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method to cure mobile ion contamination in semiconductor processing

Method to cure mobile ion contamination in semiconductor processing

Method to cure mobile ion contamination in semiconductor processing

MOS transistor having improved oxynitride dielectric

Method of making MOS transistor having improved oxynitride dielectric

Method of making a single transistor non-volatile electrically alte...

Method for enhancing nitridation and oxidation growth by introducin...

Composite dielectric for a semiconductor device and method of fabri...

Doped well structure and method for semiconductor technologies

Method of manufacturing semiconductor device by forming first and s...

Method of forming oxide isolation

Single transistor non-volatile electrically alterable semiconductor...

Method of forming a nitrided silicon dioxide (SiO.sub.x N.sub.y) film

Process for producing a semiconductor device having a silicon oxyni...

Semiconductor contact silicide/nitride process with control for sil...

Selective LPCVD tungsten deposition by nitridation of a dielectric

Semiconductor device having insulating film

Silicon nitride formation and use in self-aligned semiconductor dev...

Method of forming an insulation film on semiconductor device surface

Semiconductor manufacturing method using buried nitride formed by a...

Method of manufacturing a semi-insulating silicon layer

3798061

3540926

Patents Applicationslast 30 patents