Refluxing atmosphere

Industry

CPC
Y10S117/907

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes non-coating apparatus therefor

Current Industry

Y10S117/907Refluxing atmosphere

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of fabrication of highly resistive GaN bulk crystals
- Patent number 6,273,948
- Issue date Aug 14, 2001
- Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk
- Sylwester Porowski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for controlling the oxygen content in silicon wafers heav...
- Patent number 6,214,109
- Issue date Apr 10, 2001
- MEMC Electronic Materials, Inc.
- John D. Holder
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for controlling the oxygen content in silicon wafers heavil...
- Patent number 5,904,768
- Issue date May 18, 1999
- MEMC Electronic Materials, Inc.
- John D. Holder
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for formation of HgCdTe infrared detection lay...
- Patent number 5,846,319
- Issue date Dec 8, 1998
- Amber Engineering, Inc.
- Jeffrey Brian Barton
- C30 - CRYSTAL GROWTH
Information Patent Grant
High pressure liquid phase epitaxy reactor chamber with direct see...
- Patent number 5,375,557
- Issue date Dec 27, 1994
- Texas Instruments Incorporated
- Jeffrey M. Anderson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of and apparatus for preparing single crystal
- Patent number 5,290,395
- Issue date Mar 1, 1994
- Sumitomo Electric Industries, Ltd.
- Kazuhisa Matsumoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
High pressure liquid phase epitaxy reactor chamber and method with...
- Patent number 5,277,746
- Issue date Jan 11, 1994
- Texas Instruments Incorporated
- Jeffrey M. Anderson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reflux annealing device and method
- Patent number 5,259,900
- Issue date Nov 9, 1993
- Texas Instruments Incorporated
- John H. Tregilgas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for monocrystalline growth of dissociative compound semicond...
- Patent number 5,074,953
- Issue date Dec 24, 1991
- Mitsubishi Materials Corporation
- Keiji Shirata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for single crystal pulling downwardly from the...
- Patent number 4,824,519
- Issue date Apr 25, 1989
- Massachusetts Institute of Technology
- Aleksandar G. Ostrogorsky
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of performing solution growth of a GaAs compound semiconduct...
- Patent number 4,692,194
- Issue date Sep 8, 1987
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a single crystal
- Patent number 4,678,534
- Issue date Jul 7, 1987
- Sumitomo Electric Industries, Ltd.
- Koji Tada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing ternary or quaternary semiconductor compounds
- Patent number 4,564,415
- Issue date Jan 14, 1986
- Commissariat a l'Energie Atomique
- Alain Fillot
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of and apparatus for producing a controlled unsaturated vapo...
- Patent number 4,536,227
- Issue date Aug 20, 1985
- U.S. Philips Corporation
- John C. Brice
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor-phase method for growing mercury cadmium telluride
- Patent number 4,439,267
- Issue date Mar 27, 1984
- The United States of America as represented by the Secretary of the Army
- David A. Jackson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid phase epitaxy of mercury cadmium telluride layer
- Patent number 4,401,487
- Issue date Aug 30, 1983
- Hughes Aircraft Company
- Arthur H. Lockwood
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming single crystals of beta silicon carbide using liq...
- Patent number 4,349,407
- Issue date Sep 14, 1982
- The United States of America as represented by the United States Department o...
- Lynn B. Lundberg
- C30 - CRYSTAL GROWTH
Information Patent Grant
Mercury containment for liquid phase growth of mercury cadmium tell...
- Patent number 4,317,689
- Issue date Mar 2, 1982
- Honeywell Inc.
- John E. Bowers
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semi-open liquid phase epitaxial growth system
- Patent number 4,315,477
- Issue date Feb 16, 1982
- Rockwell International Corporation
- Cheng-Chi Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semi-open liquid phase epitaxial growth system
- Patent number 4,263,065
- Issue date Apr 21, 1981
- Rockwell International Corporation
- Cheng-Chi Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
3871912
- Patent number 3,871,912
- Issue date Mar 18, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3811963
- Patent number 3,811,963
- Issue date May 21, 1974
- C30 - CRYSTAL GROWTH
Information Patent Grant
3619283
- Patent number 3,619,283
- Issue date Nov 9, 1971
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
3488157
- Patent number 3,488,157
- Issue date Jan 6, 1970
- C30 - CRYSTAL GROWTH
Information Patent Grant
3472685
- Patent number 3,472,685
- Issue date Oct 14, 1969
- C30 - CRYSTAL GROWTH
Information Patent Grant
3345141
- Patent number 3,345,141
- Issue date Oct 3, 1967
- C30 - CRYSTAL GROWTH
Information Patent Grant
3260573
- Patent number 3,260,573
- Issue date Jul 12, 1966
- C30 - CRYSTAL GROWTH
Information Patent Grant
3172778
- Patent number 3,172,778
- Issue date Mar 9, 1965
- C30 - CRYSTAL GROWTH
Information Patent Grant
3113056
- Patent number 3,113,056
- Issue date Dec 3, 1963
- C30 - CRYSTAL GROWTH
Information Patent Grant
2944975
- Patent number 2,944,975
- Issue date Jul 12, 1960
- C30 - CRYSTAL GROWTH

Refluxing atmosphere

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of fabrication of highly resistive GaN bulk crystals

Apparatus for controlling the oxygen content in silicon wafers heav...

Process for controlling the oxygen content in silicon wafers heavil...

Method and apparatus for formation of HgCdTe infrared detection lay...

High pressure liquid phase epitaxy reactor chamber with direct see...

Method of and apparatus for preparing single crystal

High pressure liquid phase epitaxy reactor chamber and method with...

Reflux annealing device and method

Method for monocrystalline growth of dissociative compound semicond...

Method and apparatus for single crystal pulling downwardly from the...

Method of performing solution growth of a GaAs compound semiconduct...

Method for growing a single crystal

Process for producing ternary or quaternary semiconductor compounds

Method of and apparatus for producing a controlled unsaturated vapo...

Vapor-phase method for growing mercury cadmium telluride

Liquid phase epitaxy of mercury cadmium telluride layer

Method of forming single crystals of beta silicon carbide using liq...

Mercury containment for liquid phase growth of mercury cadmium tell...

Semi-open liquid phase epitaxial growth system

Semi-open liquid phase epitaxial growth system

3871912

3811963

3619283

3488157

3472685

3345141

3260573

3172778

3113056

2944975