3172778

Information

• Patent Grant
• 3172778

• References
• Source

• Patent Number

  3,172,778

• Date Filed

  Not available

• Date Issued

  Tuesday, March 9, 1965
  59 years ago

• CPC

  • C23C14/0617 - AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • C23C14/02 - Pre-treatment of the material to be coated
  • C23C14/028 - Physical treatment to alter the texture of the substrate surface
  • C30B23/002 - Controlling or regulating
  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • C30B29/42 - Gallium arsenide
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02425 - Conductive materials
  • H01L21/0243 - Surface structure
  • H01L21/02546 - Arsenides
  • H01L21/02549 - Antimonides
  • H01L21/02631 - Physical deposition at reduced pressure
  • H01L21/02658 - Pretreatments
  • Y10S117/907 - Refluxing atmosphere
  • Y10S148/158 - Sputtering
  • Y10S148/169 - Vacuum deposition
  • Y10S438/971 - Stoichiometric control of host substrate composition

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices