Sandwich processes

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CPC
C30B25/22

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

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C30B25/22Sandwich processes

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of growing bulk single crystal diamond on a substrate in a p...
- Patent number 12,139,812
- Issue date Nov 12, 2024
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diamonds and hetero-epitaxial methods of forming diamonds
- Patent number 11,905,619
- Issue date Feb 20, 2024
- M7D Corporation
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermophotovoltaic cells with integrated air-bridge for improved ef...
- Patent number 11,901,473
- Issue date Feb 13, 2024
- The Regents of the University of Michigan
- Tobias Burger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diamonds and hetero-epitaxial methods of forming diamonds
- Patent number 11,198,950
- Issue date Dec 14, 2021
- M7D Corporation
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heterogeneous material integration through guided lateral growth
- Patent number 10,435,812
- Issue date Oct 8, 2019
- Yale University
- Jung Han
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process gas preheating systems and methods for double-sided multi-s...
- Patent number 9,982,364
- Issue date May 29, 2018
- Applied Materials, Inc.
- David Masayuki Ishikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Stress mitigating amorphous SiO2 interlayer
- Patent number 9,824,886
- Issue date Nov 21, 2017
- Translucent, Inc.
- Rytis Dargis
- C30 - CRYSTAL GROWTH
Information Patent Grant
Stress mitigating amorphous SiO2 interlayer
- Patent number 8,796,121
- Issue date Aug 5, 2014
- Translucent, Inc.
- Rytis Dargis
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate, semiconductor device, light emitting diode...
- Patent number 7,622,363
- Issue date Nov 24, 2009
- Canon Kabushiki Kaisha
- Takao Yonehara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a diamond film having low surface roughness
- Patent number 6,972,049
- Issue date Dec 6, 2005
- Industrial Technology Research Institute
- Ping-Yin Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Layer crystal structure oxide, production method thereof and memory...
- Patent number 6,174,463
- Issue date Jan 16, 2001
- Sony Corporation
- Akio Machida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for epitaxial growth and apparatus for epitaxial growth
- Patent number 6,110,290
- Issue date Aug 29, 2000
- Semiconductor Process Laboratory Co.
- Kazuo Maeda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Layer crystal structure oxide, production method thereof, and memor...
- Patent number 6,106,616
- Issue date Aug 22, 2000
- Sony Corporation
- Akio Machida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for epitaxial growth
- Patent number 5,769,942
- Issue date Jun 23, 1998
- Semiconductor Process Laboratory Co.
- Kazuo Maeda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Solid phase epitaxy reactor, the most cost effective GaAs epitaxial...
- Patent number 5,725,659
- Issue date Mar 10, 1998
- Fareed Sepehry-Fard
- C30 - CRYSTAL GROWTH
Information Patent Grant
HcCdTe epitaxially grown on crystalline support
- Patent number 4,846,926
- Issue date Jul 11, 1989
- Ford Aerospace and Communications Corporation
- Robert E. Kay
- C30 - CRYSTAL GROWTH
Information Patent Grant
Close space epitaxy process
- Patent number 4,762,576
- Issue date Aug 9, 1988
- The United States of America as represented by the Secretary of the Army
- Herbert L. Wilson
- C30 - CRYSTAL GROWTH
Information Patent Grant
HGCDTE epitaxially grown on crystalline support
- Patent number 4,743,310
- Issue date May 10, 1988
- Ford Aerospace & Communications Corporation
- Robert E. Kay
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing high quality epitaxially grown semiconductors
- Patent number 4,699,084
- Issue date Oct 13, 1987
- The United States of America as represented by the Secretary of the Army
- Herbert L. Wilson
- C30 - CRYSTAL GROWTH
Information Patent Grant
HgCdTe epitaxially grown on crystalline support
- Patent number 4,655,848
- Issue date Apr 7, 1987
- Ford Aerospace & Communications Corporation
- Robert E. Kay
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for making doped semiconductors
- Patent number 4,431,475
- Issue date Feb 14, 1984
- Consortium Fur Elektrochemische Industrie GmbH
- Claus Holm
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for epitaxial deposition
- Patent number 4,279,669
- Issue date Jul 21, 1981
- Licentia Patent-Verwaltungs- GmbH
- Peter D. Braun
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of applying layers of source substance over recipient and de...
- Patent number 4,262,630
- Issue date Apr 21, 1981
- Ellin P. Bochkarev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication of a heterogeneous semiconductor structure with composi...
- Patent number 4,171,996
- Issue date Oct 23, 1979
- Gosudarstvenny Nauchno-Issledovatelsky i Proektny Institut Redkonetallichesko...
- Vadim N. Maslov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing electronic grade aluminum nitride films utili...
- Patent number 4,152,182
- Issue date May 1, 1979
- International Business Machines Corporation
- Richard F. Rutz
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heterogeneous semiconductor structure with composition gradient and...
- Patent number 4,117,504
- Issue date Sep 26, 1978
- Vadim Nikolaevich Maslov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for epitaxial growing of semiconductor periodic structures f...
- Patent number 4,100,879
- Issue date Jul 18, 1978
- Grigory Borisovich Goldin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for epitaxial growing of semiconductor periodic structures f...
- Patent number 4,063,529
- Issue date Dec 20, 1977
- Ellin Petrovich Bochkarev
- C30 - CRYSTAL GROWTH
Information Patent Grant
3655439
- Patent number 3,655,439
- Issue date Apr 11, 1972
- C30 - CRYSTAL GROWTH
Information Patent Grant
3359143
- Patent number 3,359,143
- Issue date Dec 19, 1967
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
DIAMONDS AND HETERO-EPITAXIAL METHOD OF FORMING DIAMONDS
- Publication number 20240401232
- Publication date Dec 5, 2024
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING BULK SINGLE CRYSTAL DIAMOND ON A SUBSTRATE IN A P...
- Publication number 20240401231
- Publication date Dec 5, 2024
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR CONTROLLING LAYER-TO-LAYER THICKNESS IN MULTI-TIER EPITA...
- Publication number 20240247405
- Publication date Jul 25, 2024
- Applied Materials, Inc.
- Alexandros ANASTASOPOULOS
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING LARGE-SCALE TWO-DIMENSIONAL SINGLE CRYSTAL STA...
- Publication number 20240183064
- Publication date Jun 6, 2024
- Peking University
- Kaihui LIU
- C30 - CRYSTAL GROWTH
Information Patent Application
ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OB...
- Publication number 20240158953
- Publication date May 16, 2024
- KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY
- Dae-Woo JEON
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMONDS AND HETERO-EPITAXIAL METHODS OF FORMING DIAMONDS
- Publication number 20220056615
- Publication date Feb 24, 2022
- M7D Corporation
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
THERMOPHOTOVOLTAIC CELLS WITH INTEGRATED AIR-BRIDGE FOR IMPROVED EF...
- Publication number 20210328087
- Publication date Oct 21, 2021
- The Regents of the University of Michigan
- Tobias BURGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GROWING LARGER DIAMONDS
- Publication number 20210222323
- Publication date Jul 22, 2021
- J2 Materials, LLC
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMONDS AND HETERO-EPITAXIAL METHODS OF FORMING DIAMONDS
- Publication number 20200208298
- Publication date Jul 2, 2020
- J2 Materials, LLC
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING EPITAXI...
- Publication number 20170323960
- Publication date Nov 9, 2017
- Sanken Electric Co., Ltd.
- Ken SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS GAS PREHEATING SYSTEMS AND METHODS FOR DOUBLE-SIDED MULTI-S...
- Publication number 20160298263
- Publication date Oct 13, 2016
- Applied Materials, Inc.
- DAVID MASAYUKI ISHIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
HETEROGENEOUS MATERIAL INTEGRATION THROUGH GUIDED LATERAL GROWTH
- Publication number 20160017515
- Publication date Jan 21, 2016
- Yale University
- Jung Han
- C30 - CRYSTAL GROWTH
Information Patent Application
MULTI-CRYSTAL DIAMOND BODY
- Publication number 20150329989
- Publication date Nov 19, 2015
- DIAMOND INNOVATIONS, INC.
- Valeriy V KONOVALOV
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor substrate, semiconductor device, light emitting diode...
- Publication number 20060166468
- Publication date Jul 27, 2006
- Canon Kabushiki Kaisha
- Takao Yonehara
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating a diamond film having low surface roughness
- Publication number 20050028728
- Publication date Feb 10, 2005
- Ping-Yin Liu
- C30 - CRYSTAL GROWTH

Sandwich processes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of growing bulk single crystal diamond on a substrate in a p...

Diamonds and hetero-epitaxial methods of forming diamonds

Thermophotovoltaic cells with integrated air-bridge for improved ef...

Diamonds and hetero-epitaxial methods of forming diamonds

Heterogeneous material integration through guided lateral growth

Process gas preheating systems and methods for double-sided multi-s...

Stress mitigating amorphous SiO2 interlayer

Stress mitigating amorphous SiO2 interlayer

Semiconductor substrate, semiconductor device, light emitting diode...

Method for fabricating a diamond film having low surface roughness

Layer crystal structure oxide, production method thereof and memory...

Method for epitaxial growth and apparatus for epitaxial growth

Layer crystal structure oxide, production method thereof, and memor...

Method for epitaxial growth

Solid phase epitaxy reactor, the most cost effective GaAs epitaxial...

HcCdTe epitaxially grown on crystalline support

Close space epitaxy process

HGCDTE epitaxially grown on crystalline support

Apparatus for producing high quality epitaxially grown semiconductors

HgCdTe epitaxially grown on crystalline support

Process for making doped semiconductors

Method for epitaxial deposition

Method of applying layers of source substance over recipient and de...

Fabrication of a heterogeneous semiconductor structure with composi...

Process for producing electronic grade aluminum nitride films utili...

Heterogeneous semiconductor structure with composition gradient and...

Device for epitaxial growing of semiconductor periodic structures f...

Device for epitaxial growing of semiconductor periodic structures f...

3655439

3359143

Patents Applicationslast 30 patents

DIAMONDS AND HETERO-EPITAXIAL METHOD OF FORMING DIAMONDS

METHOD OF GROWING BULK SINGLE CRYSTAL DIAMOND ON A SUBSTRATE IN A P...

METHOD FOR CONTROLLING LAYER-TO-LAYER THICKNESS IN MULTI-TIER EPITA...

METHOD FOR PREPARING LARGE-SCALE TWO-DIMENSIONAL SINGLE CRYSTAL STA...

ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OB...

DIAMONDS AND HETERO-EPITAXIAL METHODS OF FORMING DIAMONDS

THERMOPHOTOVOLTAIC CELLS WITH INTEGRATED AIR-BRIDGE FOR IMPROVED EF...

METHOD OF GROWING LARGER DIAMONDS

DIAMONDS AND HETERO-EPITAXIAL METHODS OF FORMING DIAMONDS

EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING EPITAXI...

PROCESS GAS PREHEATING SYSTEMS AND METHODS FOR DOUBLE-SIDED MULTI-S...

HETEROGENEOUS MATERIAL INTEGRATION THROUGH GUIDED LATERAL GROWTH

MULTI-CRYSTAL DIAMOND BODY

Semiconductor substrate, semiconductor device, light emitting diode...

Method for fabricating a diamond film having low surface roughness