Schottky diodes

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H01L29/66212

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66212Schottky diodes

Industries

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Patents Grantslast 30 patents

Information Patent Grant
GaN/two-dimensional AlN heterojunction rectifier on silicon substra...
- Patent number 12,154,990
- Issue date Nov 26, 2024
- South China University of Technology
- Wenliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing vertical device
- Patent number 12,107,142
- Issue date Oct 1, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor MPS diode with reduced current-crowding effect and ma...
- Patent number 12,094,985
- Issue date Sep 17, 2024
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,087,762
- Issue date Sep 10, 2024
- Panasonic Holdings Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral Schottky diode
- Patent number 11,923,462
- Issue date Mar 5, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power Schottky barrier diodes with high breakdown voltage and low l...
- Patent number 11,923,463
- Issue date Mar 5, 2024
- Virginia Tech Intellectual Properties, Inc.
- Yuhao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic component comprising a gallium nitride power transistor
- Patent number 11,810,911
- Issue date Nov 7, 2023
- STMicroelectronics Application GmbH
- Mathieu Rouviere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride transistor structure capable of reducing leakage...
- Patent number 11,810,910
- Issue date Nov 7, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF...
- Xing Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier Schottky diode device and method for fabricating t...
- Patent number 11,769,841
- Issue date Sep 26, 2023
- TAIPEI ANJET CORPORATION
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier Schottky diode device and method for fabricating t...
- Patent number 11,646,382
- Issue date May 9, 2023
- TAIPEI ANJET CORPORATION
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode
- Patent number 11,637,210
- Issue date Apr 25, 2023
- Pragmatic Printing Ltd
- Feras Alkhalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-junction device
- Patent number 11,594,574
- Issue date Feb 28, 2023
- International Business Machines Corporation
- Glenn J. Martyna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride Schottky diode
- Patent number 11,545,586
- Issue date Jan 3, 2023
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double Schottky-barrier diode
- Patent number 11,482,628
- Issue date Oct 25, 2022
- University of Electronic Science and Technology of China
- Yong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor MPS diode with reduced current-crowding effect and ma...
- Patent number 11,417,778
- Issue date Aug 16, 2022
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride antenna diode
- Patent number 11,373,995
- Issue date Jun 28, 2022
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 11,251,282
- Issue date Feb 15, 2022
- Mitsubishi Electric Corporation
- Tatsuro Watahiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode and method for manufacturing the same
- Patent number 11,201,250
- Issue date Dec 14, 2021
- Electronics and Telecommunications Research Institute
- Dong Woo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization circuit of a power component
- Patent number 11,158,629
- Issue date Oct 26, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Julien Buckley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,011,607
- Issue date May 18, 2021
- Toyoda Gosei Co., Ltd.
- Kota Yasunishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage lateral GaN-on-silicon schottky diode with reduced jun...
- Patent number 10,985,284
- Issue date Apr 20, 2021
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure of N-face group III nitride, active device, and...
- Patent number 10,886,381
- Issue date Jan 5, 2021
- Chih-Shu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked III-V semiconductor component
- Patent number 10,847,626
- Issue date Nov 24, 2020
- 3-5 Power Electronics GmbH
- Volker Dudek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 10,784,350
- Issue date Sep 22, 2020
- Mitsubishi Electric Corporation
- Tetsuro Hayashida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing device
- Patent number 10,763,112
- Issue date Sep 1, 2020
- Kabushiki Kaisha Toshiba
- Etsuo Hamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for forming doped regions by diffusion gallium ni...
- Patent number 10,763,110
- Issue date Sep 1, 2020
- QROMIS, Inc.
- Ozgur Aktas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,756,189
- Issue date Aug 25, 2020
- Mitsubishi Electric Corporation
- Tetsuro Hayashida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group-III nitride semiconductor device and method for fabricating t...
- Patent number 10,756,084
- Issue date Aug 25, 2020
- Wen-Jang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage aluminum nitride (AIN) schottky-barrier diodes
- Patent number 10,700,218
- Issue date Jun 30, 2020
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device
- Patent number 10,679,861
- Issue date Jun 9, 2020
- Toyoda Gosei Co., Ltd.
- Kota Yasunishi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Package
- Publication number 20240421029
- Publication date Dec 19, 2024
- Wolfspeed, Inc.
- Devarajan Balaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT COMPONENTS WITH HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL
- Publication number 20240332285
- Publication date Oct 3, 2024
- Intel Corporation
- Sukru Yemenicioglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE, POWER RECEPTION DEVICE AND POWER TRANSMISSION SYSTEM
- Publication number 20240194798
- Publication date Jun 13, 2024
- POWDEC K.K.
- Hiroji KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE LATERAL GAN-ON-SILICON SCHOTTKY DIODE WITH REDUCED JUN...
- Publication number 20240105857
- Publication date Mar 28, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACT...
- Publication number 20240097049
- Publication date Mar 21, 2024
- NEXPERIA B.V.
- Massimo Cataldo Mazzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED TRENCH METAL OXIDE SCHOTTKY BARRIER DIODE AND PREPARATION...
- Publication number 20240063311
- Publication date Feb 22, 2024
- SUN YAT-SEN UNIVERSITY
- Yang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20240063260
- Publication date Feb 22, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS
- Publication number 20240047201
- Publication date Feb 8, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20240030217
- Publication date Jan 25, 2024
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-HETEROJUNCTION SCHOTTKY DIODE
- Publication number 20240030356
- Publication date Jan 25, 2024
- The Penn State Research Foundation
- Sang-Woo Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC COMPONENT COMPRISING A GALLIUM NITRIDE POWER TRANSISTOR
- Publication number 20240021604
- Publication date Jan 18, 2024
- STMicroelectronics Application GmbH
- Mathieu ROUVIERE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE TRANSISTOR STRUCTURE CAPABLE OF REDUCING LEAKAGE...
- Publication number 20230260988
- Publication date Aug 17, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF...
- Xing WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE
- Publication number 20230253509
- Publication date Aug 10, 2023
- Pragmatic Printing Ltd.
- Feras ALKHALIL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS AND METHOD FOR FABRICATING SAME
- Publication number 20230139758
- Publication date May 4, 2023
- GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD.
- Zilan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF
- Publication number 20230099660
- Publication date Mar 30, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND-GAP MPS DIODE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230060216
- Publication date Mar 2, 2023
- NEXPERIA B.V.
- Massimo Mazzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN/TWO-DIMENSIONAL ALN HETEROJUNCTION RECTIFIER ON SILICON SUBSTRA...
- Publication number 20230030977
- Publication date Feb 2, 2023
- SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Wenliang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...
- Publication number 20230021015
- Publication date Jan 19, 2023
- Taipei ANJET Corporation
- Nobuo MACHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING VERTICAL DEVICE
- Publication number 20220406918
- Publication date Dec 22, 2022
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE AND MANUFACTURING METHOD THEREFOR
- Publication number 20220406949
- Publication date Dec 22, 2022
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MPS DIODE WITH REDUCED CURRENT-CROWDING EFFECT AND MA...
- Publication number 20220384662
- Publication date Dec 1, 2022
- STMicroelectronics S.r.l.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...
- Publication number 20220367731
- Publication date Nov 17, 2022
- Taipei ANJET Corporation
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR D...
- Publication number 20220359196
- Publication date Nov 10, 2022
- KYOCERA CORPORATION
- Katsunori AZUMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SCHOTTKY BARRIER DIODES WITH HIGH BREAKDOWN VOLTAGE AND LOW L...
- Publication number 20220352390
- Publication date Nov 3, 2022
- Yuhao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR A...
- Publication number 20220344219
- Publication date Oct 27, 2022
- KYOCERA CORPORATION
- Tatsuro SAWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220285565
- Publication date Sep 8, 2022
- GPOWER SEMICONDUCTOR, INC.
- Guangmin DENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES
- Publication number 20220223429
- Publication date Jul 14, 2022
- The Regents of the University of California
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220209026
- Publication date Jun 30, 2022
- KYOCERA CORPORATION
- Yusuke NAKAZATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20220181504
- Publication date Jun 9, 2022
- KYOCERA CORPORATION
- Tatsuro SAWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double Schottky-Barrier Diode
- Publication number 20210217901
- Publication date Jul 15, 2021
- University of Electronic Science and Technology of China
- Yong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS

Schottky diodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

GaN/two-dimensional AlN heterojunction rectifier on silicon substra...

Method for manufacturing vertical device

Semiconductor MPS diode with reduced current-crowding effect and ma...

Nitride semiconductor device

Lateral Schottky diode

Power Schottky barrier diodes with high breakdown voltage and low l...

Monolithic component comprising a gallium nitride power transistor

Group III nitride transistor structure capable of reducing leakage...

Junction barrier Schottky diode device and method for fabricating t...

Junction barrier Schottky diode device and method for fabricating t...

Schottky diode

Piezo-junction device

Group III-nitride Schottky diode

Double Schottky-barrier diode

Semiconductor MPS diode with reduced current-crowding effect and ma...

Group III-nitride antenna diode

Power semiconductor device

Schottky barrier diode and method for manufacturing the same

Polarization circuit of a power component

Method of manufacturing semiconductor device

High-voltage lateral GaN-on-silicon schottky diode with reduced jun...

Epitaxial structure of N-face group III nitride, active device, and...

Stacked III-V semiconductor component

Semiconductor device and method for manufacturing semiconductor device

Method for manufacturing device

Method and system for forming doped regions by diffusion gallium ni...

Semiconductor device

Group-III nitride semiconductor device and method for fabricating t...

High-voltage aluminum nitride (AIN) schottky-barrier diodes

Manufacturing method of a semiconductor device

Patents Applicationslast 30 patents

Semiconductor Package

CIRCUIT COMPONENTS WITH HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL

DIODE, POWER RECEPTION DEVICE AND POWER TRANSMISSION SYSTEM

HIGH-VOLTAGE LATERAL GAN-ON-SILICON SCHOTTKY DIODE WITH REDUCED JUN...

MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACT...

GAN-BASED TRENCH METAL OXIDE SCHOTTKY BARRIER DIODE AND PREPARATION...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

SUPER-HETEROJUNCTION SCHOTTKY DIODE

MONOLITHIC COMPONENT COMPRISING A GALLIUM NITRIDE POWER TRANSISTOR

GROUP III NITRIDE TRANSISTOR STRUCTURE CAPABLE OF REDUCING LEAKAGE...

SCHOTTKY DIODE

SEMICONDUCTOR APPARATUS AND METHOD FOR FABRICATING SAME

SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF

WIDE BAND-GAP MPS DIODE AND METHOD OF MANUFACTURING THE SAME

GAN/TWO-DIMENSIONAL ALN HETEROJUNCTION RECTIFIER ON SILICON SUBSTRA...

JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...

METHOD FOR MANUFACTURING VERTICAL DEVICE

DIODE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR MPS DIODE WITH REDUCED CURRENT-CROWDING EFFECT AND MA...

JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...

METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR D...

POWER SCHOTTKY BARRIER DIODES WITH HIGH BREAKDOWN VOLTAGE AND LOW L...

METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR A...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

Double Schottky-Barrier Diode