Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof

H01L31/02Details H01L31/02002Arrangements for conducting electric current to or from the device in operations H01L31/02005for device characterised by at least one potential jump barrier or surface barrier H01L31/02008for solar cells or solar cell modules H01L31/0201comprising specially adapted module bus-bar structures H01L31/02013comprising output lead wires elements H01L31/02016Circuit arrangements of general character for the devices H01L31/02019for devices characterised by at least one potential jump barrier or surface barrier H01L31/02021for solar cells H01L31/02024Position sensitive and lateral effect photodetectors; Quadrant photodiodes H01L31/02027for devices working in avalanche mode H01L31/0203Containers Encapsulations H01L31/0216Coatings H01L31/02161for devices characterised by at least one potential jump barrier or surface barrier H01L31/02162for filtering or shielding light H01L31/02164for shielding light H01L31/02165using interference filters H01L31/02167for solar cells H01L31/02168the coatings being antireflective or having enhancing optical properties for the solar cells H01L31/0224Electrodes H01L31/022408for devices characterised by at least one potential jump barrier or surface barrier H01L31/022416comprising ring electrodes H01L31/022425for solar cells H01L31/022433Particular geometry of the grid contacts H01L31/022441Electrode arrangements specially adapted for back-contact solar cells H01L31/02245for metallisation wrap-through [MWT] type solar cells H01L31/022458for emitter wrap-through [EWT] type solar cells H01L31/022466made of transparent conductive layers H01L31/022475composed of indium tin oxide [ITO] H01L31/022483composed of zinc oxide [ZnO] H01L31/022491composed of a thin transparent metal layer H01L31/0232Optical elements or arrangements associated with the device H01L31/02322comprising luminescent members H01L31/02325the optical elements not being integrated nor being directly associated with the device H01L31/02327the optical elements being integrated or being directly associated to the device H01L31/0236Special surface textures H01L31/02363of the semiconductor body itself H01L31/02366of the substrate or of a layer on the substrate H01L31/024Arrangements for cooling, heating, ventilating or temperature compensation H01L31/0248characterised by their semiconductor bodies H01L31/0256characterised by the material H01L31/0264Inorganic materials H01L31/0272Selenium or tellurium H01L31/02725characterised by the doping material H01L31/028including, apart from doping material or other impurities, only elements of the fourth group of the Periodic System H01L31/0284comprising porous silicon as part of the active layer(s) H01L31/0288characterised by the doping material H01L31/0296including, apart from doping material or other impurities, only AIIBVI compounds H01L31/02963characterised by the doping material H01L31/02966including ternary compounds H01L31/0304including, apart from doping materials or other impurities, only AIIIBV compounds H01L31/03042characterised by the doping material H01L31/03044comprising a nitride compounds H01L31/03046including ternary or quaternary compounds H01L31/03048comprising a nitride compounds H01L31/0312including, apart from doping materials or other impurities, only AIVBIV compounds H01L31/03125characterised by the doping material H01L31/032including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 H01L31/0321characterised by the doping material H01L31/0322comprising only AIBIIICVI chalcopyrite compounds H01L31/0323characterised by the doping material H01L31/0324comprising only AIVBVI or AIIBIVCVI chalcogenide compounds H01L31/0325characterised by the doping material H01L31/0326comprising AIBIICIVDVI kesterite compounds H01L31/0327characterised by the doping material H01L31/0328including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 H01L31/0336in different semiconductor regions H01L31/03365comprising only Cu2X / CdX heterojunctions, X being an element of the sixth group of the Periodic System H01L31/0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions H01L31/035209comprising a quantum structures H01L31/035218the quantum structure being quantum dots H01L31/035227the quantum structure being quantum wires, or nano-rods H01L31/035236Superlattices; Multiple quantum well structures H01L31/035245characterised by amorphous semiconductor layers H01L31/035254including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System H01L31/035263Doping superlattices H01L31/035272characterised by at least one potential jump barrier or surface barrier H01L31/035281Shape of the body H01L31/03529Shape of the potential jump barrier or surface barrier H01L31/036characterised by their crystalline structure or particular orientation of the crystalline planes H01L31/0368including polycrystalline semiconductors H01L31/03682including only elements of the fourth group of the Periodic System H01L31/03685including microcrystalline silicon, uc-Si H01L31/03687including microcrystalline AIVBIV alloys H01L31/0376including amorphous semiconductors H01L31/03762including only elements of the fourth group of the Periodic System H01L31/03765including AIVBIV compounds or alloys H01L31/03767presenting light-induced characteristic variations H01L31/0384including other non-monocrystalline materials H01L31/03845comprising semiconductor nano-particles embedded in a semiconductor matrix H01L31/0392including thin films deposited on metallic or insulating substrates; characterised by specific substrate materials or substrate features or by the presence of intermediate layers H01L31/03921including only elements of the fourth group of the Periodic System H01L31/03923including AIBIIICVI compound materials H01L31/03925including AIIBVI compound materials H01L31/03926comprising a flexible substrate H01L31/03928including AIBIIICVI compound H01L31/04adapted as photovoltaic [PV] conversion devices H01L31/041Provisions for preventing damage caused by corpuscular radiation H01L31/042PV modules or arrays of single PV cells H01L31/043Mechanically stacked PV cells H01L31/044including bypass diodes H01L31/0443comprising bypass diodes integrated or directly associated with the devices H01L31/0445including thin film solar cells H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate H01L31/0463characterised by special patterning methods to connect the PV cells in a module H01L31/0465comprising particular structures for the electrical interconnection of adjacent PV cells in the module H01L31/0468comprising specific means for obtaining partial light transmission through the module H01L31/047PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate H01L31/0475PV cell arrays made by cells in a planar H01L31/048Encapsulation of modules H01L31/0481characterised by the composition of the encapsulation material H01L31/0488Double glass encapsulation H01L31/049Protective back sheets H01L31/05Electrical interconnection means between PV cells inside the PV module H01L31/0504specially adapted for series or parallel connection of solar cells in a module H01L31/0508the interconnection means having a particular shape H01L31/0512made of a particular material or composition of materials H01L31/0516specially adapted for interconnection of back-contact solar cells H01L31/052Cooling means directly associated or integrated with the PV cell H01L31/0521using a gaseous or a liquid coolant H01L31/0525including means to utilise heat energy directly associated with the PV cell H01L31/053Energy storage means directly associated or integrated with the PV cell H01L31/054Optical elements directly associated or integrated with the PV cell H01L31/0543comprising light concentrating means of the refractive type H01L31/0547comprising light concentrating means of the reflecting type H01L31/0549comprising spectrum splitting means H01L31/055where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell H01L31/056the light-reflecting means being of the back surface reflector [BSR] type H01L31/06characterised by at least one potential-jump barrier or surface barrier H01L31/061the potential barriers being of the point-contact type H01L31/062the potential barriers being only of the metal-insulator-semiconductor type H01L31/065the potential barriers being only of the graded gap type H01L31/068the potential barriers being only of the PN homojunction type H01L31/0682back-junction, i.e. rearside emitter, solar cells H01L31/0684double emitter cells H01L31/0687Multiple junction or tandem solar cells H01L31/06875inverted grown metamorphic [IMM] multiple junction solar cells H01L31/0693the devices including, apart from doping material or other impurities, only AIIIBV compounds H01L31/07the potential barriers being only of the Schottky type H01L31/072the potential barriers being only of the PN heterojunction type H01L31/0725Multiple junction or tandem solar cells H01L31/073comprising only AIIBVI compound semiconductors H01L31/0735comprising only AIIIBV compound semiconductors H01L31/074comprising a heterojunction with an element of the fourth group of the Periodic System H01L31/0745comprising a AIVBIV heterojunction H01L31/0747comprising a heterojunction of crystalline and amorphous materials H01L31/0749including a AIBIIICVI compound H01L31/075the potential barriers being only of the PIN type H01L31/076Multiple junction or tandem solar cells H01L31/077the devices comprising monocrystalline or polycrystalline materials H01L31/078including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075 H01L31/08in which radiation controls flow of current through the device H01L31/085the device being sensitive to very short wavelength H01L31/09Devices sensitive to infra-red, visible or ultraviolet radiation H01L31/095comprising amorphous semiconductors H01L31/10characterised by at least one potential-jump barrier or surface barrier H01L31/101Devices sensitive to infra-red, visible or ultra-violet radiation H01L31/1013devices sensitive to two or more wavelengths H01L31/1016comprising transparent or semitransparent devices H01L31/102characterised by only one potential barrier or surface barrier H01L31/1025the potential barrier being of the point contact type H01L31/103the potential barrier being of the PN homojunction type H01L31/1032the devices comprising active layers formed only by AIIBVI compounds H01L31/1035the devices comprising active layers formed only by AIIIBV compounds H01L31/1037the devices comprising active layers formed only by AIVBVI compounds H01L31/105the potential barrier being of the PIN type H01L31/1055the devices comprising amorphous materials of the fourth group of the Periodic System H01L31/107the potential barrier working in avalanche mode H01L31/1075in which the active layers H01L31/108the potential barrier being of the Schottky type H01L31/1085the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type H01L31/109the potential barrier being of the PN heterojunction type H01L31/11characterised by two potential barriers or surface barriers H01L31/1105the device being a bipolar phototransistor H01L31/111characterised by at least three potential barriers H01L31/1113the device being a photothyristor H01L31/1116of the static induction type H01L31/112characterised by field-effect operation H01L31/1121Devices with Schottky gate H01L31/1122the device being a CCD device H01L31/1123the device being a photo MESFET H01L31/1124Devices with PN homojunction gate H01L31/1125the device being a CCD device H01L31/1126the device being a field-effect phototransistor H01L31/1127Devices with PN heterojunction gate H01L31/1128the device being a CCD device H01L31/1129the device being a field-effect phototransistor H01L31/113being of the conductor-insulator-semiconductor type H01L31/1133the device being a conductor-insulator-semiconductor diode or a CCD device H01L31/1136the device being a metal-insulator-semiconductor field-effect transistor H01L31/115Devices sensitive to very short wavelength H01L31/117of the bulk effect radiation detector type H01L31/1175Li compensated PIN gamma-ray detectors H01L31/118of the surface barrier or shallow PN junction detector type H01L31/1185of the shallow PN junction detector type H01L31/119characterised by field-effect operation H01L31/12Structurally associated with H01L31/125Composite devices with photosensitive elements and electroluminescent elements within one single body H01L31/14the light source or sources being controlled by the semiconductor device sensitive to radiation H01L31/141the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier H01L31/143the light source being a semiconductor device with at least one potential-jump barrier or surface barrier H01L31/145the semiconductor device sensitive to radiation being characterised by at least one potential-jump barrier or surface barrier H01L31/147the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier H01L31/153formed in, or on, a common substrate H01L31/16the semiconductor device sensitive to radiation being controlled by the light source or sources H01L31/161Semiconductor device sensitive to radiation without a potential-jump or surface barrier H01L31/162the light source being a semiconductor device with at least one potential-jump barrier or surface barrier H01L31/164Optical potentiometers H01L31/165the semiconductor sensitive to radiation being characterised by at least one potential-jump or surface barrier H01L31/167the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier H01L31/173formed in, or on, a common substrate H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof H01L31/1804comprising only elements of the fourth group of the Periodic System H01L31/1808including only Ge H01L31/1812including only AIVBIV alloys H01L31/1816Special manufacturing methods for microcrystalline layers H01L31/182Special manufacturing methods for polycrystalline Si H01L31/1824Special manufacturing methods for microcrystalline Si, uc-Si H01L31/1828the active layers comprising only AIIBVI compounds H01L31/1832comprising ternary compounds H01L31/1836comprising a growth substrate not being an AIIBVI compound H01L31/184the active layers comprising only AIIIBV compounds H01L31/1844comprising ternary or quaternary compounds H01L31/1848comprising nitride compounds H01L31/1852comprising a growth substrate not being an AIIIBV compound H01L31/1856comprising nitride compounds H01L31/186Particular post-treatment for the devices H01L31/1864Annealing H01L31/1868Passivation H01L31/1872Recrystallisation H01L31/1876Particular processes or apparatus for batch treatment of the devices H01L31/188Apparatus specially adapted for automatic interconnection of solar cells in a module H01L31/1884Manufacture of transparent electrodes H01L31/1888methods for etching transparent electrodes H01L31/1892methods involving the use of temporary, removable substrates H01L31/1896for thin-film semiconductors H01L31/20such devices or parts thereof comprising amorphous semiconductor materials H01L31/202including only elements of the fourth group of the Periodic System H01L31/204including AIVBIV alloys H01L31/206Particular processes or apparatus for continuous treatment of the devices H01L31/208Particular post-treatment of the devices