Silicon carbide

Industry

CPC
H01L29/1608

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/1608Silicon carbide

Industries

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,249,625
- Issue date Mar 11, 2025
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-conduction silicon carbide MOSFET device having improved g...
- Patent number 12,249,634
- Issue date Mar 11, 2025
- STMicroelectronics S.r.l.
- Mario Giuseppe Saggio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contact formation in a SiC-based electronic device
- Patent number 12,249,624
- Issue date Mar 11, 2025
- STMicroelectronics S.r.l.
- Simone Rascuná
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with overlapping electric fiel...
- Patent number 12,243,910
- Issue date Mar 4, 2025
- Denso Corporation
- Shinichirou Miyahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate silicon carbide MOSFET device and fabrication method th...
- Patent number 12,237,410
- Issue date Feb 25, 2025
- JSAB TECHNOLOGIES (SHENZHEN) LTD.
- Yong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,237,411
- Issue date Feb 25, 2025
- Kabushiki Kaisha Toshiba
- Takahiro Ogata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal substrate
- Patent number 12,234,571
- Issue date Feb 25, 2025
- Resonac Corporation
- Tomohiro Shonai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SiC substrate
- Patent number 12,237,378
- Issue date Feb 25, 2025
- Kwansei Gakuin Educational Foundation
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection structures for semiconductor devices with sensor arrange...
- Patent number 12,237,412
- Issue date Feb 25, 2025
- Wolfspeed, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,230,548
- Issue date Feb 18, 2025
- Mitsubishi Electric Corporation
- Yuri Kunishige
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,230,697
- Issue date Feb 18, 2025
- Hyundai Motor Company
- NackYong Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar SiC MOSFET with retrograde implanted channel
- Patent number 12,230,675
- Issue date Feb 18, 2025
- HITACHI ENERGY LTD
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modification of electric fields of compound semiconductor devices
- Patent number 12,230,699
- Issue date Feb 18, 2025
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,230,704
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Yasuyuki Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench transistor
- Patent number 12,224,329
- Issue date Feb 11, 2025
- Robert Bosch GmbH
- Christian Tobias Banzhaf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
JBS device with improved electrical performances, and manufacturing...
- Patent number 12,224,358
- Issue date Feb 11, 2025
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,224,320
- Issue date Feb 11, 2025
- Fuji Electric Co., Ltd.
- Yoshihito Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable MPS device based on SiC
- Patent number 12,224,321
- Issue date Feb 11, 2025
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor packages with increased power handling
- Patent number 12,224,218
- Issue date Feb 11, 2025
- Wolfspeed, Inc.
- Geza Dezsi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 12,218,191
- Issue date Feb 4, 2025
- Diodes Incorporated
- Ching-Wen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,218,215
- Issue date Feb 4, 2025
- TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Shunsuke Asaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device
- Patent number 12,218,187
- Issue date Feb 4, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing t...
- Patent number 12,211,902
- Issue date Jan 28, 2025
- Denso Corporation
- Masato Noborio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained-channel fin FETs
- Patent number 12,211,936
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 12,206,028
- Issue date Jan 21, 2025
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device and si...
- Patent number 12,205,990
- Issue date Jan 21, 2025
- Fuji Electric Co., Ltd.
- Takafumi Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell structure of silicon carbide MOSFET device, and power semicond...
- Patent number 12,205,991
- Issue date Jan 21, 2025
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Yafei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing same
- Patent number 12,205,989
- Issue date Jan 21, 2025
- PROTERIAL, LTD.
- Tsuyoshi Miura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacture of power devices having increased cross over current
- Patent number 12,199,149
- Issue date Jan 14, 2025
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,178
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH MOSFET DEVICE WITH PROTECTION GATE STRUCTURE AND A METHOD OF...
- Publication number 20250072021
- Publication date Feb 27, 2025
- Unity Power Technology Limited
- Wai Tien CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES WITH ASYMMETRICALL...
- Publication number 20250072044
- Publication date Feb 27, 2025
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having an Improved Termination Area Using a Pl...
- Publication number 20250072063
- Publication date Feb 27, 2025
- NEXPERIA B.V.
- Massimo Cataldo Mazzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC OPTO-MOSFET RELAY AND MANUFACTURING METHOD THEREOF
- Publication number 20250072129
- Publication date Feb 27, 2025
- Taiwan-Asia Semiconductor Corporation
- Di-Bao WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE
- Publication number 20250063775
- Publication date Feb 20, 2025
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Bandgap Trench Gate Semiconductor Device with Buried Gate
- Publication number 20250063800
- Publication date Feb 20, 2025
- Wolfspeed, Inc.
- Thomas Edgar Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATING-GATE BIPOLAR TRANSISTORS INCLUDING A REVERSE CONDUCTING...
- Publication number 20250063748
- Publication date Feb 20, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER
- Publication number 20250059679
- Publication date Feb 20, 2025
- Resonac Corporation
- Marusu KATADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC TRENCH DEVICES HAVING N-TYPE GATE OXIDE SHIELD ZONES
- Publication number 20250063774
- Publication date Feb 20, 2025
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...
- Publication number 20250063760
- Publication date Feb 20, 2025
- SUZHOU WATECH ELECTRONICS CO., LTD.
- Changchang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...
- Publication number 20250063784
- Publication date Feb 20, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT
- Publication number 20250063815
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DIODE WITH REDUCED VOLTAGE DROP, AND MANUFACTURING...
- Publication number 20250063785
- Publication date Feb 20, 2025
- STMicroelectronics S.r.l.
- Simone RASCUNA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250063796
- Publication date Feb 20, 2025
- Kabushiki Kaisha Toshiba
- Hiroki NEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE...
- Publication number 20250056856
- Publication date Feb 13, 2025
- Sumitomo Electric Industries, Ltd.
- Naoki KAJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20250054875
- Publication date Feb 13, 2025
- DENSO CORPORATION
- MASASHI UECHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTU...
- Publication number 20250051962
- Publication date Feb 13, 2025
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...
- Publication number 20250056830
- Publication date Feb 13, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250056836
- Publication date Feb 13, 2025
- Mitsubishi Electric Corporation
- Yuichi NAGAHISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20250054761
- Publication date Feb 13, 2025
- MICROCHIP TECHNOLOGY INCORPORATED
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CONTROLLING CHANNEL LENGTH OF SIC MOSFET
- Publication number 20250048664
- Publication date Feb 6, 2025
- POWER CUBESEMI INC.
- Tai Young KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048670
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048674
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-SHORT CHANNEL LENGTHS IN SIC MOS-BASED POWER DEVICES AND METH...
- Publication number 20250048700
- Publication date Feb 6, 2025
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250046612
- Publication date Feb 6, 2025
- RENESAS ELECTRONICS CORPORATION
- Tadashi YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIAB...
- Publication number 20250043460
- Publication date Feb 6, 2025
- STMicroelectronics International N.V.
- Cateno Marco CAMALLERI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE POWER DEVICE WITH IMPROVED ROBUSTNESS AND CORRESPON...
- Publication number 20250038060
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar JFET Device with Reduced Gate Resistance
- Publication number 20250040166
- Publication date Jan 30, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Alexander Viktorovich BOLOTNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) AND MET...
- Publication number 20250040197
- Publication date Jan 30, 2025
- THE RESEARCH FOUNDATION FOR THE STATE UNIVERSTIY OF NEW YORK
- Woongje SUNG
- H01 - BASIC ELECTRIC ELEMENTS

Silicon carbide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon carbide semiconductor device and method of manufacturing si...

Vertical-conduction silicon carbide MOSFET device having improved g...

Ohmic contact formation in a SiC-based electronic device

Silicon carbide semiconductor device with overlapping electric fiel...

Trench gate silicon carbide MOSFET device and fabrication method th...

Semiconductor device

SiC single crystal substrate

Method for manufacturing SiC substrate

Protection structures for semiconductor devices with sensor arrange...

Semiconductor device

Semiconductor device and method of manufacturing the same

Planar SiC MOSFET with retrograde implanted channel

Modification of electric fields of compound semiconductor devices

Semiconductor device

Trench transistor

JBS device with improved electrical performances, and manufacturing...

Silicon carbide semiconductor device and method of manufacturing si...

Scalable MPS device based on SiC

Semiconductor packages with increased power handling

Semiconductor structure and manufacturing method thereof

Semiconductor device and method of manufacturing semiconductor device

SiC semiconductor device

Silicon carbide semiconductor device and method for manufacturing t...

Strained-channel fin FETs

Single sided channel mesa power junction field effect transistor

Method of manufacturing silicon carbide semiconductor device and si...

Cell structure of silicon carbide MOSFET device, and power semicond...

Silicon carbide epitaxial substrate and method for manufacturing same

Manufacture of power devices having increased cross over current

Semiconductor device

Patents Applicationslast 30 patents

TRENCH MOSFET DEVICE WITH PROTECTION GATE STRUCTURE AND A METHOD OF...

POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES WITH ASYMMETRICALL...

Semiconductor Device Having an Improved Termination Area Using a Pl...

MONOLITHIC OPTO-MOSFET RELAY AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE

Wide Bandgap Trench Gate Semiconductor Device with Buried Gate

INSULATING-GATE BIPOLAR TRANSISTORS INCLUDING A REVERSE CONDUCTING...

SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER

SIC TRENCH DEVICES HAVING N-TYPE GATE OXIDE SHIELD ZONES

LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...

INTEGRATED CIRCUIT

SILICON CARBIDE DIODE WITH REDUCED VOLTAGE DROP, AND MANUFACTURING...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTU...

METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD OF CONTROLLING CHANNEL LENGTH OF SIC MOSFET

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

ULTRA-SHORT CHANNEL LENGTHS IN SIC MOS-BASED POWER DEVICES AND METH...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIAB...

SILICON CARBIDE POWER DEVICE WITH IMPROVED ROBUSTNESS AND CORRESPON...

Planar JFET Device with Reduced Gate Resistance

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) AND MET...