the diffusion material being a compound of the elements to be diffused

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C30B31/08

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure Apparatus therefor

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C30B31/08the diffusion material being a compound of the elements to be diffused

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Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing substrate for solar cell and substrate for...
- Patent number 11,901,475
- Issue date Feb 13, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroyuki Otsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal laminate structure
- Patent number 10,538,862
- Issue date Jan 21, 2020
- Tamura Corporation
- Ken Goto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composition comprising an engineered defect concentration
- Patent number 10,161,062
- Issue date Dec 25, 2018
- The Board of Trustees of the University of Illinois
- Edmund G. Seebauer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Template for epitaxial growth, method for producing the same, and n...
- Patent number 9,556,535
- Issue date Jan 31, 2017
- Soko Kagaku Co., Ltd.
- Cyril Pernot
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal heat treatment method
- Patent number 8,728,232
- Issue date May 20, 2014
- Hitachi Chemical Co., Ltd.
- Tatsuya Usui
- C30 - CRYSTAL GROWTH
Information Patent Grant
Laser media with controlled concentration profile of active laser i...
- Patent number 8,175,131
- Issue date May 8, 2012
- Raytheon Company
- Kevin W. Kirby
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal heat treatment method
- Patent number 7,531,036
- Issue date May 12, 2009
- Hitachi Chemical Company, Ltd.
- Naoaki Shimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for adjusting lithium oxide concentration in w...
- Patent number 6,893,498
- Issue date May 17, 2005
- Silicon Light Machines Corporation
- Gregory D. Miller
- C30 - CRYSTAL GROWTH
Information Patent Grant
Phosphorous doping a semiconductor particle
- Patent number 5,926,727
- Issue date Jul 20, 1999
- Gary Don Stevens
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optical materials from intercalation of polyvalent cations in beta...
- Patent number 4,664,849
- Issue date May 12, 1987
- University Patents, Inc.
- Gregory C. Farrington
- C30 - CRYSTAL GROWTH
Information Patent Grant
Bubbler cylinder and dip tube device
- Patent number 4,506,815
- Issue date Mar 26, 1985
- Thiokol Corporation
- Andreas A. Melas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for control of an open gallium diffusion
- Patent number 4,217,154
- Issue date Aug 12, 1980
- BBC Brown, Boveri & Company, Limited
- Gerhard Popp
- C30 - CRYSTAL GROWTH
Information Patent Grant
Melt-formed polycrystalline ceramics and dopant hosts containing ph...
- Patent number 4,175,988
- Issue date Nov 27, 1979
- Owens-Illinois, Inc.
- James E. Rapp
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and apparatus for bubbling gas through a high purity liquid
- Patent number 4,140,735
- Issue date Feb 20, 1979
- J. C. Schumacher Co.
- John C. Schumacher
- C30 - CRYSTAL GROWTH
Information Patent Grant
Cross-flow reactor
- Patent number 4,108,106
- Issue date Aug 22, 1978
- Tylan Corporation
- Alfred R. Dozier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Solid diffusion dopants for semiconductors and method of making the...
- Patent number 4,033,790
- Issue date Jul 5, 1977
- Denki Kagaku Kogyo Kabushiki Kaisha
- Koreaki Gunjigake
- C30 - CRYSTAL GROWTH
Information Patent Grant
3813292
- Patent number 3,813,292
- Issue date May 28, 1974
- C30 - CRYSTAL GROWTH
Information Patent Grant
3573116
- Patent number 3,573,116
- Issue date Mar 30, 1971
- C30 - CRYSTAL GROWTH
Information Patent Grant
3540951
- Patent number 3,540,951
- Issue date Nov 17, 1970
- C30 - CRYSTAL GROWTH
Information Patent Grant
3532565
- Patent number 3,532,565
- Issue date Oct 6, 1970
- C30 - CRYSTAL GROWTH
Information Patent Grant
3459668
- Patent number 3,459,668
- Issue date Aug 5, 1969
- C30 - CRYSTAL GROWTH
Information Patent Grant
3429831
- Patent number 3,429,831
- Issue date Feb 25, 1969
- C30 - CRYSTAL GROWTH
Information Patent Grant
3374125
- Patent number 3,374,125
- Issue date Mar 19, 1968
- C30 - CRYSTAL GROWTH
Information Patent Grant
3085032
- Patent number 3,085,032
- Issue date Apr 9, 1963
- C30 - CRYSTAL GROWTH
Information Patent Grant
3066052
- Patent number 3,066,052
- Issue date Nov 27, 1962
- C30 - CRYSTAL GROWTH
Information Patent Grant
3003900
- Patent number 3,003,900
- Issue date Oct 10, 1961
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING AN EPITAXIAL LAYER
- Publication number 20240203730
- Publication date Jun 20, 2024
- ASM IP HOLDING B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SUBSTRATE FOR SOLAR CELL AND SUBSTRATE FOR...
- Publication number 20240136464
- Publication date Apr 25, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroyuki OTSUKA
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
STRUCTURES WITH BORON- AND GALLIUM-DOPED SILICON GERMANIUM LAYERS A...
- Publication number 20230349069
- Publication date Nov 2, 2023
- ASM IP HOLDING, B.V.
- Wonjong Kim
- C30 - CRYSTAL GROWTH
Information Patent Application
EXTREME LARGE GRAIN (1 MM) LATERAL GROWTH OF CD(SE,TE) ALLOY THIN F...
- Publication number 20220290328
- Publication date Sep 15, 2022
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- David Scott ALBIN
- C01 - INORGANIC CHEMISTRY
Information Patent Application
LARGE-SCALE SYNTHESIS OF 2D SEMICONDUCTORS BY EPITAXIAL PHASE CONVE...
- Publication number 20200357635
- Publication date Nov 12, 2020
- King Abdullah University of Science and Technology
- Xiangming XU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING SUBSTRATE FOR SOLAR CELL AND SUBSTRATE FOR...
- Publication number 20200144441
- Publication date May 7, 2020
- Shin-Etsu Chemical Co., Ltd.
- Hiroyuki OTSUKA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL LAMINATE STRUCTURE
- Publication number 20200102667
- Publication date Apr 2, 2020
- TAMURA CORPORATION
- Ken GOTO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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CRYSTAL LAMINATE STRUCTURE
- Publication number 20180073164
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- TAMURA CORPORATION
- Ken GOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR ATOM INCORPORATION INTO MATERIALS USING A PLASMA AFTERGLOW
- Publication number 20170183795
- Publication date Jun 29, 2017
- Valorisation-Recherche, Limited Partnership
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- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITION COMPRISING AN ENGINEERED DEFECT CONCENTRATION
- Publication number 20160319461
- Publication date Nov 3, 2016
- THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
- Edmund G. Seebauer
- C30 - CRYSTAL GROWTH
Information Patent Application
Template for Epitaxial Growth, Method for Producing the Same, and N...
- Publication number 20160265138
- Publication date Sep 15, 2016
- SOKO KAGAKU CO., LTD.
- CYRIL PERNOT
- C30 - CRYSTAL GROWTH
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LASER MEDIA WITH CONTROLLED CONCENTRATION PROFILE OF ACTIVE LASER I...
- Publication number 20100226407
- Publication date Sep 9, 2010
- Raytheon Company
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- C30 - CRYSTAL GROWTH
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Selective Doping of a Material
- Publication number 20080038524
- Publication date Feb 14, 2008
- Beneq Oy
- Markku Rajala
- C30 - CRYSTAL GROWTH
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Method for Doping Material and Doped Material
- Publication number 20070218290
- Publication date Sep 20, 2007
- Beneq Oy
- Markku Rajala
- C30 - CRYSTAL GROWTH
Information Patent Application
Single crystal heat treatment method
- Publication number 20060266276
- Publication date Nov 30, 2006
- Hitachi Chemical Company, Ltd.
- Naoaki Shimura
- C30 - CRYSTAL GROWTH
Information Patent Application
Single crystal heat treatment method
- Publication number 20060266277
- Publication date Nov 30, 2006
- Hitachi Chemical Company, Ltd.
- Tatsuya Usui
- C30 - CRYSTAL GROWTH

the diffusion material being a compound of the elements to be diffused

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for manufacturing substrate for solar cell and substrate for...

Crystal laminate structure

Composition comprising an engineered defect concentration

Template for epitaxial growth, method for producing the same, and n...

Single crystal heat treatment method

Laser media with controlled concentration profile of active laser i...

Single crystal heat treatment method

Method and apparatus for adjusting lithium oxide concentration in w...

Phosphorous doping a semiconductor particle

Optical materials from intercalation of polyvalent cations in beta...

Bubbler cylinder and dip tube device

Method for control of an open gallium diffusion

Melt-formed polycrystalline ceramics and dopant hosts containing ph...

Process and apparatus for bubbling gas through a high purity liquid

Cross-flow reactor

Solid diffusion dopants for semiconductors and method of making the...

3813292

3573116

3540951

3532565

3459668

3429831

3374125

3085032

3066052

3003900

Patents Applicationslast 30 patents

METHOD OF FORMING AN EPITAXIAL LAYER

METHOD FOR MANUFACTURING SUBSTRATE FOR SOLAR CELL AND SUBSTRATE FOR...

STRUCTURES WITH BORON- AND GALLIUM-DOPED SILICON GERMANIUM LAYERS A...

EXTREME LARGE GRAIN (1 MM) LATERAL GROWTH OF CD(SE,TE) ALLOY THIN F...

LARGE-SCALE SYNTHESIS OF 2D SEMICONDUCTORS BY EPITAXIAL PHASE CONVE...

METHOD FOR MANUFACTURING SUBSTRATE FOR SOLAR CELL AND SUBSTRATE FOR...

CRYSTAL LAMINATE STRUCTURE

CRYSTAL LAMINATE STRUCTURE

METHODS FOR ATOM INCORPORATION INTO MATERIALS USING A PLASMA AFTERGLOW

COMPOSITION COMPRISING AN ENGINEERED DEFECT CONCENTRATION

Template for Epitaxial Growth, Method for Producing the Same, and N...

LASER MEDIA WITH CONTROLLED CONCENTRATION PROFILE OF ACTIVE LASER I...

Selective Doping of a Material

Method for Doping Material and Doped Material

Single crystal heat treatment method

Single crystal heat treatment method